Abstract: Systems and methods for detecting electrical connection and disconnection on an USB Type-A charging port like power adapters, power banks and car chargers having one or more USB Type-A charging port of an USB device. The system includes: a voltage source; a MOSFET SWITCH gate driver, in USB type-A connected state, that operatively couples MOSFET SWITCH with voltage source and VBUS supply of USB type-A port; charge pump; a current sense differential amplifier; and a control unit configured to: monitor VBUS current, and detect potential disconnected state of connected USB type-A port; and monitor VBUS voltage and compare VBUS voltage with predetermined voltage to sense external condition such that VBUS voltage drops because of load capacitance and load current. The control unit is further configured to, when the duty cycle has reached a minimum VBUS current, detect the USB type-A disconnection with a charge pump state.

Abstract: A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

Abstract: Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.

Abstract: A microelectronic assembly comprises a microelectronic element, a redistribution structure, a plurality of backside conductive components and an encapsulant. The redistribution structure may be configured to conductively connect bond pads of the microelectronic element with terminals of the microelectronic assembly. The plurality of back side conductive components may be etched monolithic structures and further comprise a back side routing layer and an interconnection element integrally formed with the back side routing layer and extending in a direction away from the back side routing layer. The back side routing layer of at least one of the plurality of back side conductive components overlies the rear surface of the microelectronic element. An encapsulant may be disposed between each interconnection element. The back side routing layer of the at least one of the plurality of back side conductive components extends along one of the opposed interconnection surfaces.

Abstract: A display device includes a display panel including a plurality of pixels, a first panel pad, and a second panel pad and a circuit board including a first substrate pad and a second substrate pad to apply a first power voltage to the first panel pad and the second panel. The display panel further includes a first power line pattern connected to the second substrate pad to apply the first power voltage to the pixels and a second power line pattern connected to the first substrate pad. The circuit board includes a first electrostatic discharge protection circuit connected between the first substrate pad and the second substrate pad, a substrate power pattern electrically connected to the first substrate pad, a ground pattern receiving a ground voltage, and a second electrostatic discharge protection circuit connected between the substrate power pattern and the ground pattern.

Abstract: An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.

Abstract: The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfac

Abstract: An integrated circuit with a fault reporting structure. The integrated circuit has at least one power MOSFET having a plurality of MOSFET cells with each MOSFET cell having a drain metal and a source metal, and the integrated circuit has a power MOSFET area for routing the drain metals and the source metals of the plurality of MOSFET cells. The fault reporting structure has a metal net routed in the power MOSFET area or in an area above or below the power MOSFET area.

Abstract: Various memory cell structures and power routings for one or more cells in an integrated circuit are disclosed. In one embodiment, different metal layers are used for power stripes that are operable to connect to voltage sources to supply different voltage signals, which allows some or all of the power stripes to have a larger width. Additionally or alternatively, fewer metal stripes are used for signals in a metal layer to allow the power stripe in that metal layer to have a larger width. The larger width(s) in turn increases the total area of the power stripe(s) to reduce the IR drop across the power stripe. The various power routings include connecting metal pillars in one metal layer to a power stripe in another metal layer, and extending a metal stripe in one metal layer to provide additional connections to a power stripe in another metal layer.

Abstract: A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

Abstract: A display device of the invention includes pixels each connected to at least one of scan lines and at least one of emission lines, a scan driver providing scan signals to the scan lines, and an emission driver including stages connected to the emission lines, each of the stages providing an emission signal to a corresponding emission line. A first stage among the stages includes a first transistor including a first electrode connected to a first power source line, a second electrode connected to a first emission line, and a gate electrode connected to a first scan line, and a second transistor including a first electrode connected to a first node and a second electrode connected to the first emission line.

Abstract: A display apparatus includes a substrate, a first-layer power supply line disposed on a substrate in a peripheral area which surrounds a display area in which an image is displayed, a first insulation layer on the substrate on which the first-layer power supply line is disposed, a second-layer power supply line disposed on the first insulation layer and the first-layer power supply line, and contacting the first-layer power supply line, a second insulation layer on the first insulation layer on which the second-layer power supply line is disposed, and a light emitting structure disposed on the second insulation layer and including a first electrode, a light emitting layer and a second electrode which is electrically connected to the second-layer power supply line.

Abstract: A CMOS image sensor (CIS) package includes a package substrate, a CIS chip arranged on an upper surface of the package substrate and electrically connected with the package substrate, a glass arranged over the CIS chip, and an adhesive layer interposed between an edge portion of an upper surface of the CIS chip and an edge portion of a lower surface of the glass to attach the glass to the CIS chip. An interlocking recess is provided to at least one of the CIS chip and the glass, and the adhesive layer comprises an interlocking protrusion inserted into the interlocking recess.

Abstract: An organic light emitting element includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer and including an electron transport layer, and a second electrode disposed on the electron transport region. The hole transport region may include a first hole transport layer having a first refractive index, a second hole transport layer disposed on the first hole transport layer and having a second refractive index less than the first refractive index, and a third hole transport layer disposed below the first hole transport layer and having a third refractive index less than the first refractive index. A difference between the first refractive index and the second refractive index, and a difference between the first refractive index and the third refractive index may each be about 0.1 to about 1.0.

Abstract: Implementations of a packaging system may include a wafer; and a curvature adjustment structure coupled thereto where the curvature adjustment structure may be configured to alter a curvature of a largest planar surface of the wafer.

Abstract: A voltage output circuit and an electronic cigarette are provided. The voltage output circuit includes a control chip and a step-down switch chip. When a first switch element turns on, the modulation signal output terminal of the control chip outputs a pulse modulation signal to a first control terminal of the step-down switch chip, and access between a first access terminal and a second access terminal of the step-down switch chip is established, based on the effective pulse modulation signal. The output voltage of the second access terminal is less than a system power voltage. The voltage output circuit and the electronic cigarette outputs the pulse modulation signal to the step-down switch chip by the control chip, and the step-down switch chip outputs a suitable driving voltage to the load, such as a thermal wire, the voltage output circuit with simplified structure is adjustable and improved.

Abstract: A method for manufacturing a detection device, the detection device comprising a substrate, a plurality of sensor elements arranged on a first principal surface of the substrate, and an insulating film provided above the substrate so as to cover the sensor elements, and the method comprising: causing the first principal surfaces of a pair of the substrates on each of which the sensor elements, the insulating film, and a first projection projecting from a surface of the insulating film are formed to face each other, and bonding together the pair of the substrates; and polishing a second principal surface of each of the pair of the substrates on a side opposite to the first principal surface in a state where the pair of the substrates are bonded together.

Abstract: Integrated circuits described herein implement multiplexer (MUX) gate system. An integrated circuit includes a plurality of inputs coupled with a first stage of the integrated circuit. The first stage includes a plurality of first Schottky diodes and a plurality of N-type transistors. Each input is coupled with a respective first Schottky diode and N-type transistor. The integrated circuit also includes a plurality of outputs of the first stage coupled with a second stage of the integrated circuit. The second stage includes a plurality of second Schottky diodes and a plurality of P-type transistors. Each output coupled with a respective second Schottky diode and P-type transistor. The integrated circuit further includes a plurality of outputs of the second stage coupled with a set of transistors including a P-type transistor and an N-type transistor, and an output of the set of transistors coupled with an output of the MUX gate system.

Abstract: A display device includes: a first pixel region, a second pixel region, and a third pixel region that are adjacent to each other in a plan view; a display panel including a first light emitting element overlapping with the first pixel region, a second light emitting element overlapping with the second pixel region, and a third light emitting element overlapping with the third pixel region; and a refractive index control layer including a first refractive index control part corresponding to the first light emitting element, and a second refractive index control part corresponding to the second light emitting element. The first refractive index control part and the second refractive index control part have different refractive indices from each other.