Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dual thickness fuse structures and methods of manufacture. The structure includes a continuous wiring structure on a single wiring level and composed of conductive material having a fuse portion and a thicker wiring structure.

Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

Abstract: A sample cell includes an annular support surrounding a sample region. A set of reflectors of the annular support define an optical path that reflects a source beam in a sequence of alternating directions through the sample region at a plurality of different angles such that the source beam exits the set of reflectors after having passed through the sample region a plurality of times. A micro-cell is positionable in the sample region including multi-dimensionally distributed nano-pores. A slidingly adjustable lens forms part of source and detector photomixing packages.

Abstract: Some embodiments include an assembly having a CMOS tier. The CMOS tier includes a PMOS deck and an NMOS deck, with the decks being vertically offset relative to one another. The PMOS deck has p-channel transistors which are substantially identical to one another, and the NMOS deck has n-channel transistors which are substantially identical to one another. An insulative region is between the PMOS deck and the NMOS deck. The CMOS tier has one or more circuit components which include one or more of the n-channel transistors coupled with one or more of the p-channel transistors through one or more conductive interconnects extending through the insulative region. Some embodiments include methods of forming assemblies to comprise one or more CMOS tiers.

Abstract: A support member system is described for association with an overhead transport system. The support member system provides a safety feature to the overhead transport system by which the overhead transport system is able to avoid damage to wafers that are contained within a wafer cassette that is unintentionally released by the overhead transport system. The support member system is able to prevent such released cassettes from impacting the ground or tools located under the overhead transport system. The support member system targets wafer cassettes that have dimensions which are different than the dimensions of wafer cassettes for which the overhead transport system was originally designed to transport. Stocker systems for receiving, storing and delivering different types of wafer cassettes are also described.

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. The active region includes a first source/drain region, a second source/drain region and a channel region between the first and second source/drain regions. A conductive gating structure is operatively proximate the channel region and comprises molybdenum. The integrated transistor may be incorporated into integrated memory, such as, for example, DRAM, FeFET memory, etc. Some embodiments include methods of forming integrated assemblies and devices, such as, for example, integrated transistors, integrated memory, etc.

Abstract: An STT-MRAM device incorporating a multiplicity of MTJ junctions is encapsulated so that it dissipates heat produced by repeated read/write processes and is simultaneously shielded from external magnetic fields of neighboring devices. In addition, the encapsulation layers can be structured to reduced top lead stresses that have been shown to affect DR/R and Hc. We provide a device design and its method of fabrication that can simultaneously address all of these problems.

Abstract: Embodiments of three-dimensional (3D) memory devices having a memory layer that confines electron transportation and methods for forming the same are disclosed. A method for forming a 3D memory device includes the following operations. An initial channel hole is formed in a stack structure having a plurality of first layers and a plurality of second layers alternatingly arranged over a substrate. A portion of each one of the plurality of first layers facing a sidewall of the initial channel hole is removed to form a channel hole. A semiconductor channel structure is formed in the channel hole. The semiconductor channel structure includes a memory layer following a profile of a sidewall of the channel hole. The plurality of first layers are removed to form a plurality of tunnels. Portions of the memory layer are removed, through the tunnels, to divide the memory layer into a plurality of disconnected sub-memory portions.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may implanting dopants into a substrate to form a preliminary impurity region and heating the substrate to convert the preliminary impurity region into an impurity region. Heating the substrate may be performed at an ambient temperature of from about 800° C. to about 950° C. for from about 20 min to about 50 min. The method may also include forming first and second trenches in the impurity region to define an active fin and forming a first isolation layer and a second isolation layer in the first and second trenches, respectively. The first and second isolation layers may expose opposing sides of the active fin. The method may further include forming a gate insulation layer extending on the opposing sides and an upper surface of the active fin and forming a gate electrode traversing the active fin.

Abstract: In an embodiment, a semiconductor device is provided that includes a lateral transistor device having a source, a drain and a gate, and a monolithically integrated capacitor coupled between the gate and the drain.

Abstract: Systems and methods for detecting electrical connection and disconnection on an USB Type-A charging port like power adapters, power banks and car chargers having one or more USB Type-A charging port of an USB device. The system includes: a voltage source; a MOSFET SWITCH gate driver, in USB type-A connected state, that operatively couples MOSFET SWITCH with voltage source and VBUS supply of USB type-A port; charge pump; a current sense differential amplifier; and a control unit configured to: monitor VBUS current, and detect potential disconnected state of connected USB type-A port; and monitor VBUS voltage and compare VBUS voltage with predetermined voltage to sense external condition such that VBUS voltage drops because of load capacitance and load current. The control unit is further configured to, when the duty cycle has reached a minimum VBUS current, detect the USB type-A disconnection with a charge pump state.

Abstract: An electrical vertical take-off and landing (eVTOL) aircraft includes a plurality of electrical propulsion units (EPUs), each EPU having a propeller or a fan configured to be driven to rotate by an electrical motor arranged to receive electrical power from a respective power electronics converter. Each power electronics converter includes a converter commutation cell having a power circuit and a gate driver circuit, the power circuit including at least one power semiconductor switching element and at least one capacitor. At least one terminal of each power conducting switching element is connected to at least one electrically conductive layer of a multi-layer planar carrier substrate at an electrical connection side of a power semiconductor prepackage, which includes at least one electrically conductive layer located on an opposite side of the power semiconductor switching element to the electrical connection side of the power semiconductor prepackage.

Abstract: A cover for an electronic package is manufactured by placing an optical insert, having opposite faces and configured to allow light radiation to pass therethrough, between two opposite faces of a cavity of a mold in a position such that said optical faces of the optical insert make contact with said opposite faces of the cavity of the mold. A coating material is injected into the cavity and around the optical insert. The coating material is set to obtain a substrate that is overmolded around the optical insert so as to produce the cover. An electronic package includes an electronic chip mounted to a support substrate with the cover formed by the overmolded substrate mounted to the support substrate.

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

Abstract: An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.

Abstract: The total silicon area used by a plurality of high voltage transistors in an array of NAND cells is reduced by modifying the silicon area layout such that the size of the source and drain of each of the plurality of high voltage transistors is dependent on the maximum voltage to be applied to each of the source and drain for the respective one of the plurality of high voltage transistors.

Abstract: Structures that include a peaking inductor and a T-coil, and methods associated with forming such structures. A back-end-of-line interconnect structure includes a first metallization level, a second metallization level, and a third metallization level arranged between the first metallization level and the second metallization level. The T-coil includes a first inductor with a first coil arranged in the first metallization level and a second inductor with a second coil arranged in the second metallization level. A peaking inductor includes a coil arranged in the third metallization level. The first coil of the first inductor, the second coil of the second inductor, and the coil of the peaking inductor are stacked in the back-end-of-line interconnect structure with an overlapping arrangement.

Abstract: According to one or more embodiments, a semiconductor integrated circuit device includes a first inductor portion, a second inductor portion, and a third inductor portion. The first inductor portion is in a first region of a first wiring layer. The second inductor portion is disposed in a second region of the first wiring layer. The third inductor portion is on a second wiring layer spaced from the first wiring layer in a first direction. The third inductor portion includes a first end portion electrically connected to a first end of the first inductor portion, a second end portion electrically connected to a first end of the second inductor portion, and a third end portion between the first and second end portions. The first inductor portion, the second inductor portion, and the third inductor portion constitute an inductor element.

Abstract: According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.

Abstract: An indicator circuit for an emergency light, including: a charging circuit, in connection with a positive terminal of a lithium battery and configured to charge the lithium battery; a battery protection circuit, in connection with a negative terminal of the lithium battery and configured to provide protection against overvoltage and overcurrent of an electrical signal output by the lithium battery; a main control circuit, in connection with the negative terminal of the lithium battery and configured to compare the electrical signal output by the lithium battery with a reference voltage signal and output a control signal; and a drive circuit, in connection with the main control circuit and an indicator light, and configured to drive the indicator light to illuminate according to the control signal and turn off the indicator light in case of abnormal conditions.