Abstract: A hybrid fault protection circuit (HFPC) includes an input, an output, a resistor-fuse circuit, an electrically-controlled safety switching device (ESSD) and an overload protection module (OPM). The input receives power from a power source. The output outputs power to a high-power cyclical load. The resistor-fuse circuit includes a resistor and one or more fuses collectively being connected in series with the resistor. The ESSD includes a coil and contacts. The contacts are connected in parallel with the resistor-fuse circuit. The OPM: arms the HFPC by energizing the coil and closing the contacts to supply load current from the input to the output via the contacts when a fault downstream from the HFPC does not exist; detects a fault downstream from the HFPC; and, in response to detecting the fault, opens the contacts to cause fault current to pass through the one or more fuses and not across the contacts.

Abstract: Electrical circuits and methods for protecting a semiconductor switch in response to detecting a short-circuit condition of the semiconductor switch are presented. An electrical circuit includes a latch-reset portion that disables or enables the semiconductor switch by connecting or disconnecting, respectively, a gate of the semiconductor switch to a source of the semiconductor switch. The circuit also includes a power source portion that is energized by a voltage pulse that drives the gate of the semiconductor switch. The power source portion provides voltage and current to other parts of the circuit so that no external voltage source is needed to operate the circuit. The semiconductor switch may be a silicon carbide MOSFET, which may have a threshold voltage that changes with temperature and age. The circuit can account for such changes.

Abstract: Systems and methods are provided for fail-safe protection of circuitry from electrostatic discharge due through input and output connections. The power circuitry may include a string of diodes, connections to power lines, and particular diodes for voltage pull-up and pull-down clamping. There may be both a pull-up third diode in the diode string for connection between I/O and VDD and a pull-down third diode between I/O and VSS. During an ESD event the ESD device is configured to hold voltage from exceeding a threshold voltage and damaging internal circuitry. During operational mode the ESD device is turned off and does not interfere with circuit operations.

Abstract: A method of operating a solenoid valve can include applying power to a coil of the solenoid valve, interrupting power to the coil upon a first increase in power consumption of the coil, detecting a first on-time when power is applied to the coil, re-applying power to the coil upon a first condition becoming satisfied, interrupting power to the coil upon a second increase in power consumption of the coil, detecting a second on-time when power is re-applied to the coil, comparing the first on-time with the second on-time, and detecting when an armature of the solenoid valve has physically shifted based at least in part on the comparing. Detecting when the armature of the solenoid valve has physically shifted can include determining that the second on-time is greater than the first on-time.

Abstract: Systems and devices for providing fault current limiting protection in a power circuit may include a solid-state switching device (SSSD) including at least one switch device including a semiconductor device, a voltage clamping circuit connected in parallel with the at least one switch device, and one or more circuit breakers connected in series with the SSSD. The at least one switch device may include a second semiconductor device. The at least one switch device may include a first switch device and a second switch device. The fault current limiting protection includes, to enable clearing the fault, opening one of the switch devices to maintain the electric current at a threshold for a defined period of time, and opening, in response to failing to clear the fault, the other switch device to interrupt the electric current between a power source and electrical load(s) connected to the power circuit.

Abstract: A power electronics device includes first and second semiconductor dies. The first die includes: a main GaN power transistor; a first GaN current sense transistor having a source electrically connected to a second current sense terminal; a second GaN current sense transistor; a diode device electrically connected in series between the drains of the main GaN power transistor and second GaN current sense transistor; and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal. The second die includes current sense and short circuit detection circuits electrically connected to the current sense terminals. The short circuit detection circuit detects when the drain current of the main GaN power transistor exceeds a predetermined value and when the main GaN power transistor is in saturation.

Abstract: The present disclosure relates to a power-taking circuit suitable for use in conjunction with a bypass circuit of a photovoltaic component, a parallel-type photovoltaic component control device, and a photovoltaic string power distribution system. In embodiments of the present disclosure, the power-taking circuit includes a pump-type voltage clamped circuit configured to release and output energy to generate a first internal voltage in a case that the bypass circuit is turned on, and generate the first internal voltage according to an output voltage of the photovoltaic component and store the energy in a case that the bypass circuit is turned off; and a comparison circuit configured to generate a first control signal according to the first internal voltage so that the bypass circuit is controlled to be turned off or turned on according to the first control signal.

Abstract: A monitoring system for a mechanically driven circuit breaker that includes fixed and moveable contacts, and a main actuator, wherein the moveable contact is selectively spaced from the fixed contact, and wherein the main actuator transitions the circuit breaker between states, the monitoring system comprising an actuation device; a sensor; and a processing unit. The actuation device applies a micro-motion to the actuator without the circuit breaker transitioning states; wherein the sensor acquires sensor data associated with the application of the micro-motion; wherein the sensor provides sensor data to the processing unit; and wherein the processing unit determines whether the circuit breaker has a fault using the sensor data.

Abstract: Embodiments of the present specification relate to a circuit breaker control device, a circuit breaker, and a circuit breaker test system, in which: communication is performed with a test device in a data communication manner so as to receive, from the test device, data on information of a test signal for testing a blocking operation of the circuit breaker; a relay element of the test signal is analyzed on the basis of the data; and whether to perform the blocking operation is determined according to an analysis result, and the blocking operation is thus performed according to a determination result.

Abstract: A monitoring arrangement for monitoring a surge through a surge arrester, the surge arrester being adapted to be connected to a power network in order to protect an electrical equipment of the power network against incoming surges passing through the surge arrester. The monitoring arrangement detects a reignition surge, which reignition surge has been occasioned by a switching of a circuit breaker. The monitoring arrangement further calculates the number of detected reignition surges.

Abstract: A circuit interrupter including a current sensor having a normal sensor output and an over current detection output, a solid state switch module structured to have a closed state to allow current to flow through the circuit interrupter and an open state to interrupt current flowing through the circuit interrupter, a gate driver structured to control the solid state switch module including a desaturation function output, wherein the gate driver is structured to cause the solid state switch module to interrupt current flowing through the circuit interrupter when the DESAT function output changes to the on state, and an electronic trip circuit structured to output a trip signal to the gate driver when the normal sensor output reaches a first threshold level or the overcurrent detection output changes to the on state.

Abstract: In described examples, an SoC includes at least two voltage domains interconnected with a communication bus. Detection logic in a first voltage domain determines when a voltage error occurs in a second voltage domain and isolates communication via the communication bus when a voltage error or a timing error is detected.

Abstract: A circuit comprising: an input power source; an input power regulator connected to the input power source and configured to supply regulated power to circuit component(s); a transient event detector configured to detect a transient event; a timer circuit configured to change a signal on a line connecting the timer circuit to the circuit component(s) when the transient event is detected (wherein the change of the signal (i) causes supply of the regulated power to be discontinued and (ii) causes power or energy storage devices of the circuit component(s) to be discharged to ground); and a passive energy storage device configured to supply an amount of power to operate the timer circuit at least through the transient event, while the input power source is electrically isolated from the passive energy storage device and the timer circuit.

Abstract: An improved current flowback prevention device that uses a Gallium Nitride (GaN) device or transistor to mitigate the effects of short circuits is described herein. For example, a GaN device may have an ideal diode-like behavior during reverse conduction. This characteristic of the GaN device can be used to protect electrical systems against short circuit incidents caused by upstream circuits or electronic components. As an illustrative example, a power regulator may be injecting current towards a direct current (DC) bus. While the power regulator is operating normally, the gate of the GaN device may be kept high to allow current to pass through the GaN device from the power regulator to the DC bus. If a short circuit event occurs, the gate of the GaN device may no longer receive a high signal and prevent current from passing through the GaN device.

Abstract: A method and system are provided for load or branch circuit recovery from a fault(s) on an electrical system. The method and system energize, at a branch device, a branch circuit after expiry of a predetermined disconnection period of time that was initiated in response to a detected arc fault on the branch circuit. The method and system update a data value representing a number of times an attempt has been made to energize the branch circuit in response to detected arc faults on the branch circuit. Upon determining that the data value satisfies or crosses an attempt threshold, the method and system prevent or delay at the branch device the energizing of the branch circuit.

Abstract: Electrical connectors with integral fault detection are provided. The connectors are adapted to be coupled to AC multi-phase electrical cables, and can include a plurality of phase contacts, a detector, and an indicator. The phase contacts include a first phase contact, a second phase contact, and a third phase contact to receive a first phase, a second phase, and a third phase, respectively, of the electrical cable. The detector is configured to monitor a first temperature associated with the first phase contact, a second temperature associated with the second phase contact, and a third temperature associated with the third phase contact to detect a temperature fault at any of the contacts. The indicator is operatively coupled to the detector and is configured to indicate presence of the temperature fault.

Abstract: A power converter includes a power conversion circuit, a relay, and a controller. The power conversion circuit can be configured to implement conversion from a direct current to an alternating current. The relay can be configured to implement on-grid and off-grid switching. The controller can be configured to control switch-on/off of switches in the power conversion circuit and the relay. When a positive direct current bus has a short circuit to ground, the controller switches off a relay of a corresponding phase when any phase of grid voltage is negative. When a negative direct current bus has a short circuit to ground, the controller switches off a relay of a corresponding phase when any phase of grid voltage is positive.

Abstract: There is provided a solid-state switch device connected between a single-phase power supply source and a load, including: a phase bridge arm circuit, including a first and a second power semiconductor switches, which each includes a first, a second and a control ends and each includes a body diode, wherein the second ends of the first and the second power semiconductor switches are connected in series in phase of a single-phase power supply source; a phase voltage sampling circuit, configured to acquire sampled values of phase voltage of the phase bridge arm circuit; and a control circuit, configured to determine direction of the phase voltage according to the sampled values, turn on one of the power semiconductor switches whose body diode direction is the same as the direction of the phase voltage, and turn on the other within a half cycle after the immediate zero-crossing of the phase voltage.

Abstract: An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

Abstract: A control apparatus including a first operation control circuit configured to open a direct-current switch when a power conversion apparatus is in a waiting state and a first direct-current voltage value is greater than a predetermined first threshold, a clocking circuit configured to, when the direct-current switch is opened, clock an elapsed time after the direct-current switch is opened, and a soundness determination circuit configured to calculate a first difference voltage value that is a difference between the first direct-current voltage value and a second direct-current voltage value when the power conversion apparatus is in the waiting state and the direct-current switch is opened, and the elapsed time is greater than or equal to a predetermined first time, to determine that the direct-current switch is abnormal when the first difference voltage value is less than or equal to the predetermined second threshold.