Abstract: A plug-in discharge detection unit includes two plugs of a cathode and an anode configured to allow insertion into respective two plug insertion holes of a plug socket. A discharge detection section configured to allow detection of a noise of discharge superimposed on a voltage or current, and an arithmetic section configured to allow determination of whether discharge has occurred based on the noise. The detection unit further includes a ground terminal electrically connected to a ground; at least one first switch electrically connected to a secondary side of the respective plug; and a current limiting resistor electrically connected to a secondary side of the first switch.

Abstract: Method of poling a ferroelectric medium applies a first contact surface of a first electrical contact to a first side surface section, the first contact surface smaller than the first side surface section, and applies a second contact surface of a second electrical contact to a second side surface, the second contact surface covering at least the second side surface section, and applies an electrical voltage between the first and second electrical contacts. Relative movement between the first contact surface and the ferroelectric medium in two mutually perpendicular directions sweeps the first contact surface over the first side surface section and a measure of a current flowing between the first electrical contact and the second electrical contact through the ferroelectric medium is detected and the electrical voltage controlled so that a deviation of the current from a nominal poling current is minimised. The second electrical contact is an ionic conductor.

Abstract: A bidirectional circuit breaker has Breaking Speed Control (BSC) to prevent false triggering when an upstream fault occurs. A semiconductor switch has a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), an Insulated Gate Bipolar Transistor (IGBT), and a varistor in three parallel branches that drive a positive output. An input capacitor between positive and negative inputs forms an LC network with an inductor connected to the positive input. A current sensor is connected between the inductor and the semiconductor switch. When the current sensor detects reverse current, a snubber switch is closed, connecting a snubber capacitor across both terminals of the inductor. A LCC network is formed that stores more energy than the LC network, spreading out a current spike caused by the upstream fault, reducing peak reverse current pulled through the circuit breaker by the upstream fault. Thus breaking speed is reduced when the snubber switch closes.

Abstract: The application discloses a power supply device and an overcurrent alarm method. The power supply device provides power to a load system and includes: a current sampling module for obtaining a current sampling value; a first comparison module for comparing the current sampling value with an alarm current reference value to obtain a first output value; and a control module for determining whether to send a current alarm signal to the load system based on the first output value, wherein when the current sampling value is greater than or equal to the alarm current reference value, the control module sends the current alarm signal and provides a warning notification to the load system; when the current sampling value is less than the alarm current reference value, the control module does not send the current alarm signal, or the control module sends a current non-alarm signal.

Abstract: A substrate processing equipment and a method of driving the substrate processing equipment, which automatically cut off power supplied to a main circuit breaker and a branch circuit breaker when an operator inspects a process chamber or a power supply system. The substrate processing equipment for processing a substrate includes: a process processing module including loads utilized in a process for processing a substrate; a branch circuit breaker installed on a periphery to the process processing module and electrically connected to the loads; a main circuit breaker electrically connected to the branch circuit breaker and supplying power to the branch circuit breaker; and a power distribution board in which the branch circuit breaker is mounted, and including a power distribution board door, in which the main circuit breaker cuts off power when the power distribution board door is opened.

Abstract: The present disclosure discloses a dimming power supply, which includes a power supply circuit, a power control transistor, a control circuit, a driving circuit and a short-circuit protection circuit. The short-circuit protection circuit includes a voltage sampling circuit and a first switching device, an input end of the voltage sampling circuit is connected to the negative electrode of the load, an output end of the voltage sampling circuit is connected to a control end of the first switching device, and when the first switching device is turned on, a signal input to the gate of the power control transistor is pulled down or truncated. A second switching device is connected in series in the voltage sampling circuit, a control end of the second switching device is connected to the gate of the power control transistor, when the power control transistor is turned off, the second switching device is turned off.

Abstract: An embodiment apparatus includes a processing chamber and an equipment housing; a processing tool in the equipment housing with a process nozzle projecting into the processing chamber; a substrate chuck for supporting a wafer disposed in the processing chamber. The apparatus includes a docking station in the processing chamber configured to reset a temperature of the substrate chuck when the wafer is docked in a docking position; and a chuck arm in the processing chamber. The chuck arm is configured to move the wafer under the process nozzle and to move the wafer to the docking position.

Abstract: A semiconductor device includes a conductive layer extending along a first lateral direction; a gate dielectric layer disposed over the conductive layer; a channel layer disposed over the gate dielectric layer and extending along a second lateral direction perpendicular to the first lateral direction; a first via-like structure, in direct contact with the channel layer, that is disposed along a first edge of the channel layer extending along the second lateral direction; and a second via-like structure, in direct contact with the channel layer, that is disposed along a second, opposite edge of the channel layer extending along the second lateral direction. The first via-like structure and second via-like structure are laterally separated apart along a third lateral direction that is clockwise tilted from the second lateral direction with a first positive angle.

Abstract: An electrical arrangement for protection in a direct current high voltage electric system comprises an input connection with an input terminal, an output connection with a output terminal, a main disconnection component between the input terminal and the output terminal and at least one clamping circuit between the input terminal and the output terminal. The clamping circuit has a first connecting path and a second connecting path, arranged in parallel to each other. The first connection path comprises a storage coupling for temporarily buffering an overvoltage present between the input terminal and the output terminal. The first connection path also comprises an activatable switch for selectably connecting the storage coupling with the output terminal. The second connection path comprises a supply coupling for operating the activatable switch in dependency of the overvoltage.

Abstract: A semiconductor device has an analogue-to-digital converter (ADC) driven by a plurality of analogue input channels, each having an input pad and an input node connected to the input pad. The input node is connected to an input of the ADC through a respective switch. The analogue input channels comprise a high-side clamp transistor connected between the input node and a high-side power rail, a high-side comparator to clamp the input node to a high-side clamp voltage when the voltage at the input node exceeds a high-side comparison voltage, a low-side clamp transistor connected between the input node and a low-side power rail, and a low-side comparator for turning on the low-side clamp transistor to clamp the input node to a low-side clamp voltage when the voltage at the input node falls below a low-side comparison voltage.

Abstract: To provide a static eliminator and a static elimination system capable of strictly managing a manufacturing status of a product without increasing a management burden. The static eliminator includes an ion generation unit, an ion control unit, a measurement value acquisition unit, a data generation unit, and a nonvolatile storage unit. The ion generation unit generates ions. The ion control unit controls the ion generation unit. The measurement value acquisition unit acquires a measurement value related to control by the ion control unit and acquires a measurement time at which the measurement value has been acquired. The data generation unit generates history data based on the measurement value and the measurement time. The nonvolatile storage unit stores the history data.

Abstract: Systems, apparatuses, and techniques are described for controlling an energy storage device, such as a high-voltage capacitor, using a power based current control profile. Examples are described which comprise a control circuit comprising a power management integrated circuit (PMIC) and a system power and performance control (SPC) circuit. The PMIC may detect and characterize a fixed maximum power limit for a power source. The PMIC may further regulate the transfer of power, from a power source and/or the energy storage device, to a plurality of system loads. The SPC circuit may regulate the charging and/or discharging of the energy storage device based on a power based current control profile. The charging and/or discharging of the energy storage device may be controlled by the SPC as a function of an instantaneous power-gap between the dynamic system loading power and the fixed maximum power limit detected for the power source.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may define a backside gas lumen that extends through a surface of the substrate seat. The assemblies may include a bias electrode coupled with the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that protrude upward across the substrate seat. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include at least one chucking electrode embedded within the electrostatic chuck body. The assemblies may include at least one heater embedded within the electrostatic chuck body.

Abstract: A pedestal may be configured to support a substrate during a semiconductor process. An electrostatic chuck (ESC) may include electrodes embedded in the pedestal that are configured to deliver a chucking voltage to the pedestal during the semiconductor process. A power source coupled to an electrode may be configured to provide a signal having a frequency range to the electrode during the semiconductor process. A controller may be configured to receive a measurement of an impedance when the frequency range is applied to the electrode. The impedance measurements my then be used to determine a chucking state of the substrate, such as whether an airgap is present between the substrate and the pedestal during the semiconductor process.

Abstract: An electrical protection device including main electrical contacts, a switching mechanism, a solid-state power switch connected in series with the main electrical contacts, a safety device connected in parallel with the main electrical contacts, the safety device including secondary electrical contacts, and a control unit, the control unit being adapted to control the power switch and the switching mechanism. The safety device being adapted to, when a current of greater than a predetermined value flows through the safety device, activate the switching mechanism to switch the main electrical contacts and the secondary electrical contacts to the open state.

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

Abstract: A solenoid drive circuit includes a power source, a first solenoid control circuit connected to the power source, the first solenoid control circuit including a first solenoid coil and a first solenoid control switch that controls a flow current through the first solenoid coil and a first regenerative drive circuit connected to the first solenoid control circuit and that includes a first regenerative capacitor. The first regenerative drive circuit can include a first diode bridge formed of four diodes (D1, D2, D3 and D4) and that has a positive input, a negative input, a positive output and a negative output, wherein the first regenerative capacitor is connected between the positive and negative inputs.

Abstract: A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 GPa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

Abstract: A surge suppressor is connected in parallel to a circuit breaker of an input path of a MVAC conversion circuit. The surge suppressor includes a plurality of surge suppression circuits, and each surge suppression circuit includes a rectification circuit, a switch, a controller, and a conversion circuit. The rectification circuit includes an AC terminal and a rectification terminal, and the AC terminals of the surge suppression circuits are coupled in series. The switch is coupled to the rectifier terminal, the controller receives a control command and provides a control signal according to the control command. The conversion circuit is coupled to the controller and the switch, and provides a control voltage modulated by the control signal. The control voltage adjusts an on-resistance of the switch to adjust a magnitude of a first current flowing through the switch.

Abstract: A grounding brush assembly including a grounding brush and a mounting plate configured to axially and radially retain the brush, the brush providing a support and a plurality of electrically conductive fibers mounted in the support. The mounting plate is at least partially coated with an electrically conductive coating.