Abstract: This application provides a fault handling system of a solid-state transformer, including a first power unit and a second power unit that are cascaded and connected. The first power unit includes a first auxiliary supply, a first control module, and a first communication module. The first auxiliary supply and the first control module are both electrically connected to two ends of a first busbar capacitor. The first control module is configured to detect a voltage of the first busbar capacitor. The second power unit includes a second auxiliary supply and a second control module. The second auxiliary supply and the second control module are both electrically connected to two ends of a second busbar capacitor. The first communication module outputs fault information to the second control module when the first control module detects that the voltage of the first busbar capacitor is greater than a threshold.

Abstract: A semiconductor device includes: a split-gate transistor connected between a drain electrode (output electrode OUT) and a ground electrode and having a plurality of individually controllable channel regions; an active clamp circuit configured to limit the output voltage VOUT appearing at the output electrode to a clamp voltage or below; and a gate control circuit configured to raise the ON resistance of the split-gate transistor gently (or stepwise) after the split-gate transistor is switched from the ON state to the OFF state before the active clamp circuit limits the output voltage VOUT.

Abstract: A circuit for a circuit interrupter is provided. The circuit may in include a first SCR configured to receive a first trigger signal at a gate of the first SCR, a second SCR configured to receive a second trigger signal at a gate of the second SCR, and a third SCR configured to receive a third trigger signal at a gate of the third SCR. A cathode of the first SCR may be connected to an anode of the third SCR. A cathode of the second SCR and a cathode of the third SCR may be connected to a ground. Methods of operating a circuit interrupter and a circuit are also provided.

Abstract: Illustrative GFCI devices and methods maintain safety while reducing the risk of unnecessary interruptions. One illustrative GFCI circuit includes: a first operational amplifier configured to couple to a first current transformer that senses a net current through multiple power conductors, the first operational amplifier configured to convert a signal current from a signal terminal of the first current transformer to a signal voltage, the signal voltage having an inverse dependence on frequency; an analog to digital converter configured to provide samples of the signal voltage; and a controller configured to interrupt at least one of the multiple power conductors when an magnitude measurement derived from the samples exceeds a frequency-independent and/or phase-independent threshold a predetermined number of times or for a predetermined time period.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: Systems and methods are provided for a self-biasing electro-static discharge (ESD) power clamp. The ESD power clamp comprises an ESD detection circuit coupled to a positive supply voltage node and a ground voltage node. The ESD detection circuit includes a first node having a first voltage level during a standby mode and a second voltage level during an ESD mode. The ESD power clamp further comprises a discharge circuit coupled to the ESD detection circuit that includes a plurality of discharge elements a self-biasing node having a third voltage level during the standby mode. The third voltage level provides a voltage drop across at least one of the discharge elements that is less than the first voltage level. The discharge circuit provides a high-impedance path during the standby mode and a low-impedance path during the ESD mode.

Abstract: A power supply device includes a conversion module, a plastic case and an inorganic material, and the conversion module includes an input end, a potential ignition source, a conversion circuit and an output end. The input end is configured to receive an input source, and the potential ignition source is configured to suppress a surge of the input source. The conversion circuit is configured to convert the input source into an output source, and the output end is configured to provide the output source to a load. The plastic case accommodates the conversion module, and the plastic case includes an inner surface. The inorganic material is configured between the potential ignition source and the inner surface, and a distance between the potential ignition source and the inner surface is less than 13 mm.

Abstract: A system includes a generator. Three AC feeders are connected for feeding AC output from the generator. A rectifier is electrically connected to the three AC feeders and to a load via a first DC feeder and a second DC feeder. A first resistor connects between a first one of the DC feeders and ground. A first voltage sensor is operatively connected to detect voltage across the first resistor. A second resistor connects between the second DC feeder and ground. A second voltage sensor is operatively connected to detect voltage across the second resistor. A controller is configured to monitor for changes in common mode voltage based on the input from the first sensor and from the second sensor, and to determine presence of a fault if change in the common mode voltage exceeds a predetermined threshold.

Abstract: Process control instruments having local intrinsic safety barriers and methods of manufacturing the same are disclosed. An example field instrument for a process control assembly includes a non-protection compartment, intrinsically safe circuitry positioned in the non-protection compartment, a protection compartment, non-intrinsically safe circuitry positioned in the protection compartment, and local barrier circuitry positioned in the protection compartment to operatively couple the non-intrinsically safe circuitry to the intrinsically safe circuitry, the local barrier circuitry to prevent the intrinsically safe circuitry from receiving an electrical energy that is greater than an electrical energy threshold from the non-intrinsically safe circuitry.

Abstract: A protection circuit, for protecting a whole or part of a HVDC power transmission network, includes a number of sets of sensors, each of which set defines a respective protection zone. The protection circuit also includes a controller that is programmed to evaluate sensor information received from the sensors to determine whether a fault has occurred within a protection zone. The controller is further programmed, in the event of a sensor in a protection zone failing, to dynamically reconfigure the affected protection zone by including a sensor from another protection zone.

Abstract: Provided is an electrostatic chuck device including: a voltage application unit configured to apply a dechuck voltage that is used when dechucking an object to a first electrode and a second electrode, the dechuck voltage being constituted by a first AC voltage applied to the first electrode in a first waveform, and a second AC voltage applied to the second electrode in a second waveform having a phase difference from the first waveform; and an information output unit configured to output information on timing at which the first waveform and the second waveform intersect each other. The voltage application unit stops application of the dechuck voltage to the first electrode and the second electrode on the basis of the information.

Abstract: A driving voltage generating device includes a temperature detector, a controlling circuitry, a voltage generator, and an output stage circuitry. The temperature detector is coupled to a control terminal of a power transistor and is configured to generate temperature detection information by detecting an ambient temperature. The controlling circuitry is coupled to the temperature detector and generates an activation signal by determining whether the ambient temperature is abnormal according to the temperature detection information. The voltage generator generates an operation power according to the activation signal. The output stage circuitry is coupled to the voltage generator, generates a driving voltage according to the operation power, and provides the driving voltage to the control terminal of the power transistor.

Abstract: An input device is provided, which includes an operation shaft and a case configured to house the operation shaft such that a tilting operation to tilt an axial direction of the operation shaft to a desired direction can be performed. A coil constituting a resonant circuit for performing signal interaction through electromagnetic induction coupling with a position detection sensor is housed in the operation shaft, such that a direction of magnetic flux penetrating the coil is in the axial direction of the operation shaft. The operation shaft can be tilted to a desired direction within the case, with a predetermined position between a first end side and a second end side of the operation shaft in the axial direction of the operation shaft serving as a rotation center, so that a direction of tilt of the operation shaft and a magnitude of an angle of the tilt are detected.

Abstract: In an entry detection system, detection of an object that is allowed to enter the region is appropriately disabled. An entry detection system for detecting an object entering a region includes: an entry detection sensor configured to detect whether or not a part of the object is present within an entry detection plane; a muting sensor section including a first unit and a second unit; and a control unit. The control unit disables the entry detection sensor in response to at least one of a first detection state and a second detection state being established, the first detection state is a state in which the first unit provided on a passing direction-first side of the entry detection plane detects the object, and the second detection state is a state in which the second unit provided on a passing direction-second side of the entry detection plane detects the object.

Abstract: A protective device includes a relay having a contact that opens and closes a current path of a cell, and a control device that controls the relay. The control device executes a reduction processing of reducing a contact resistance of the relay.

Abstract: In general, according to one embodiment, protection circuit includes first to third power supply lines, a first resistor, a first capacitor, a first transistor, and first to third inverters. The first resistor is coupled between the first power supply line and a first node. The first capacitor is coupled between the first node and the third power supply line. The first inverter includes a first power supply end, a second power supply end, and an input end. The first power supply end of the first inverter is coupled to the second power supply line. The second power supply end of the first inverter is coupled to the third power supply line. The input end of the first inverter is coupled to the first node.

Abstract: A system for controlling a high-power drive device includes a fault detection integrated circuit product configured to provide an indication of a fault condition associated with the high-power drive device to a first terminal in a first voltage domain in response to detecting the fault condition in a second voltage domain. The system includes a gate driver controller integrated circuit product configured to drive a second terminal coupled to a control node in a second voltage domain based on a control signal and an enable signal received from a third terminal in the first voltage domain. The second voltage domain is higher than the first voltage domain. The system may include a redundant fault reporting integrated circuit product or an additional fault detection integrated circuit product configured to detect a second fault condition in the second voltage domain that is different from the fault condition.

Abstract: A semiconductor light emitting diode self-assembling device according to the present invention comprises: an assembly chamber in which fluid and semiconductor light emitting diodes are received; a magnetic chuck disposed above the assembly chamber and applying, while moving in a horizontal direction, a magnetic force thereto so as to induce movement of the semiconductor light emitting diodes in the assembly chamber; a substrate chuck for placing an assembly substrate, on which the semiconductor light emitting diodes in the assembly chamber are seated, between the assembly chamber and the magnetic chuck and supporting the assembly substrate; and a control part for controlling the driving of the magnetic chuck and the substrate chuck, wherein the magnetic chuck includes: a magnetic force forming part including a plurality of magnets; and a vacuum forming part for correcting a bending phenomenon of the assembly substrate by using vacuum pressure between the plurality of magnets so as to maintain a predetermined

Abstract: An over-current protection device includes a resistor element, an outer electrode, and an encapsulation layer. The resistor element has a first insulation layer, a first electrically conductive layer, a PTC material layer, a second electrically conductive layer and a second insulation layer stacked sequentially from bottom to top. The first insulation layer has a bottom surface and a first sidewall adjoining the bottom surface. The outer electrode has a first electrode and a second electrode disposed on the bottom surface. The first and second electrodes are electrically connected to the first conductive layer through the first and second vias, respectively. The encapsulation layer covers the first sidewall of the first insulation layer and extends to a part of the bottom surface, thereby forming a first perimeter on the bottom surface of the first insulation layer. The first and second electrodes are located inside the first perimeter.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.