Abstract: An embodiment provides a beam projector module that includes: a light source configured to output light; a substrate configured to support the light source; an optical device configured to reduce the light in terms of intensity output to a predetermined space; a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed space with the substrate and the optical device; a temperature sensor configured to measure a temperature of the frame; and a processor configured to control an output of the light source. The processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the frame exceeds a reference value.

Abstract: In an ultrastable laser, using a large mode-volume optical resonator, which suppresses the resonator's fast thermal fluctuations, together with the stimulated Brillouin scattering (SBS) optical nonlinearity presents a powerful combination that enables the ability to lase with an ultra-narrow linewidth of 20 Hz. The laser's long-term temperature drift is compensated by using the narrow Brillouin line to sense minute changes in the resonator's temperature (e.g., changes of 85 nK). The precision of this temperature measurement enables the stabilization of resonators against environmental perturbations.

Abstract: Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.

Abstract: A radio-frequency, RF, slab laser 10 with a Z-fold resonator cavity defined by an output mirror 32, a first fold mirror 34, a second fold mirror 36 and a rear mirror 30. The second fold mirror 36 is rotated by an adjustment angle away from the angle it would have if the mirrors were all plane mirrors and directed the round trip beam path by direct reflection. Moreover, the rear mirror 30 is rotated by an adjustment angle that is approximately twice the adjustment angle of the second fold mirror 36. These rotations of the rear mirror 30 and second fold mirror 36 suppresses parasitic mode paths that would otherwise exist.

Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Abstract: In various embodiments, monitoring of one or more secondary diffracted beams formed within a laser resonator provides information based at least in part on which a primary diffracted beam formed within the laser resonator is controlled.

Abstract: A light emitting device includes a package body, a light-transmissive cover, one or more semiconductor laser elements, a wavelength converting member, a wiring, electrically conductive layers, an opaque electrically insulating member, and electrodes. The light-transmissive cover is secured to the package body. The wavelength converting member is disposed above the light-transmissive cover in an optical path of the laser light emitted from the semiconductor laser element. The wiring is disposed on a light incidence surface-side of the wavelength converting member. The electrically conductive layers are electrically connected to the wiring and disposed on an upper surface of the light-transmissive cover. The electrically insulating member at least partially covers the electrically conductive layers and the light-transmissive cover.

Abstract: A fiber-laser includes a gain-fiber in a laser-resonator. A polarizer is located in the laser-resonator at an end thereof, causing the output of the fiber-laser to be linearly polarized. A wavelength-selective element is also included in the laser-resonator for selecting an output wavelength of the fiber-laser from within a gain-bandwidth of the gain-fiber.

Abstract: The present invention provides a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.

Abstract: The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source. The phosphor material is provided with a plurality of scattering centers scribed on an excitation surface or inside bulk of a plate to scatter electromagnetic radiation of a laser beam from the excitation source incident on the excitation surface to enhance generation and quality of an emitted light from the phosphor material for outputting a white light emission either in reflection mode or transmission mode.

Abstract: A wavelength error for each pulse in a first subset of pulses emitted from an optical source is determined, the wavelength error being the difference between a wavelength for a particular pulse and a target wavelength; a pulse-by-pulse correction signal is determined based on the determined wavelength error, the pulse-by-pulse correction signal including a correction signal associated with each pulse in the first subset of pulses; and a correction based on the determined pulse-by-pulse correction signal is applied to each pulse in a second subset of pulses emitted from the optical source, where applying a correction to a pulse in the second subset of pulses reduces the wavelength error of the pulse in the second subset of pulses.

Abstract: Multi-surface emitting mid-IR multiwavelength distributed-feedback quantum cascade ring lasers laid out in a concentric circle are disclosed. The lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.

Abstract: A folded slab waveguide laser having a hybrid waveguide-unstable resonator cavity. Multiple slab waveguides of thickness ‘t’ supporting vertical waveguide modes are physically arranged above one another in a stack and optically arranged in series through one or more cavity folding assemblies with curved mirrors. A gain medium such as a gas is arranged in each slab. Each cavity folding assembly is designed to redirect the radiation beam emitted from one slab waveguide into the next waveguide and also at the same time to provide a focus for the radiation beam so that a selected vertical waveguide mode (or modes) is (or are) coupled efficiently into the next slab.

Abstract: A semiconductor device has a semiconductor die. A first insulating layer is disposed over the semiconductor die. A first via is formed in the first insulating layer over a contact pad of the semiconductor die. A first conductive layer is disposed over the first insulating layer and in the first via. A second insulating layer is disposed over a portion of the first insulating layer and first conductive layer. An island of the second insulating layer is formed over the first conductive layer and within the first via. The first conductive layer adjacent to the island is devoid of the second insulating layer. A second conductive layer is disposed over the first conductive layer, second insulating layer, and island. The second conductive layer has a corrugated structure. A width of the island is greater than a width of the first via.

Abstract: A polarisation and mode selection technique for a gas waveguide laser is described in which a surface of the waveguide is formed to be substantially dielectric with a localised metallic region therein. The metallic region provides linear polarisation while the dielectric surface provides for low order mode selection. Embodiments are described to channel and planar waveguides with various resonator configurations. Ranges are provided for the size and location of the metallic region on the waveguide surface.

Abstract: A surface emitting laser includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields.

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

Abstract: A method of manufacturing a semiconductor laser device includes: forming an n-type nitride semiconductor layer; forming a first layer comprising InaGa1-aN (0<a<1) above the n-type nitride semiconductor layer; forming a second layer and a third layer above the first layer; forming an active layer having a single quantum well structure or a multiple quantum well structure above the second layer and the third layer; and forming a p-type nitride semiconductor layer above the active layer.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.