Patents Examined by Sharon Gibson
  • Patent number: 6030754
    Abstract: A method of removing photoresist material from a semiconductor wafer is disclosed. The method includes rinsing the semiconductor wafer in an organic solvent selected to dissolve the photoresist material. The method next rinses the semiconductor wafer in a light alcohol such as isopropyl alcohol. The method next subjects the semiconductor wafer to an alcohol vapor dry operation. An oxygen plasma ashing operation is then used to oxidize organic material on the semiconductor wafer. This is followed by another rinse. This post ash rinse includes only the light alcohol without the organic solvent. The post ash rinse may include dipping the semiconductor wafers into one or two isopropyl alcohol tanks. Finally is another alcohol vapor dry operation.
    Type: Grant
    Filed: December 5, 1997
    Date of Patent: February 29, 2000
    Assignee: Texas Instruments Incorporated
    Inventor: Earl V. Atnip
  • Patent number: 6027859
    Abstract: The present invention generally provides a semiconductor substrate having an extended test structure and a method of fabricating such a substrate. A method of forming an extended test structure on a semiconductor substrate, consistent with one embodiment of the invention, includes forming a first test structure pattern over a first portion of the substrate and forming a second test structure pattern of the second portion of the substrate which partially overlaps the first portion of the substrate such that the first test structure pattern and the second test structure overlap. The first test structure pattern may be formed using, for example, reticle and a second test structure pattern may be formed using the same reticle. The first and second test structure patterns may, for example, be formed in a scribe line of the substrate.
    Type: Grant
    Filed: December 17, 1997
    Date of Patent: February 22, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Robert Dawson, Mark W. Michael, Fred Hause
  • Patent number: 6027858
    Abstract: A process of tenting plated through holes with a photoimageable dielectric is provided which includes a dielectric film comprising a photoimageable epoxy based resin layer and a peelable polyester layer. In accordance with the process of the present invention, the peelable polyester layer of the dielectric film is removed prior to baking, developing, patterning or curing the structure.
    Type: Grant
    Filed: June 6, 1997
    Date of Patent: February 22, 2000
    Assignee: International Business Machines Corporation
    Inventors: Gerald Walter Jones, Ross William Keesler, Voya Rista Markovich, Heinke Marcello, James Warren Wilson, William Earl Wilson
  • Patent number: 6027865
    Abstract: A method is provided for accurate patterning of photoresist during lithography process. A photoresist layer is deposited on a surface of a semicondictor wafer. The photoresist layer is then illuminated using a lithography apparatus including a mask, a two-thirds annular aperture stop and a quadra pole aperture stop. Portions of the photoresist layer are removed to provide a resulting patterned photoresist layer.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: February 22, 2000
    Assignee: Texas Instruments Incorporated
    Inventor: Katsuyoshi Andoh
  • Patent number: 6025117
    Abstract: A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
    Type: Grant
    Filed: December 8, 1997
    Date of Patent: February 15, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasuhiko Sato, Seiro Miyoshi, Toru Ushirogouchi, Sawako Yoshikawa, Hideto Matsuyama, Yasunobu Onishi, Masaki Narita, Toshiro Hiraoka
  • Patent number: 6022669
    Abstract: A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
    Type: Grant
    Filed: July 26, 1996
    Date of Patent: February 8, 2000
    Assignees: Symetrix Corporation, Mitsubishi Materials Corporation
    Inventors: Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Michael C. Scott, Joseph D. Cuchiaro, Gary F. Derbenuick, Larry D. McMillan, Carlos A. Paz de Araujo
  • Patent number: 6020111
    Abstract: In a method of manufacturing a semiconductor device, a first film essentially consisting of silicon is deposited on the surface of a semiconductor substrate. A second film essentially consisting of material having a proper etching selection ratio relative to tungsten is deposited on the first film. A third film essentially consisting of tungsten is deposited on the second film. A resist pattern is formed on the third film. The third film is etched and patterned to the surface of the second film, by using the resist pattern as a mask. The second film is etched to have the same shape as the third film. The first film is etched to have the same shape as the third film. After the step of patterning the third film and before the step of patterning the first film, the resist pattern is heated to a temperature of 80.degree. C. or higher, the semiconductor substrate is exposed in atmospheric air, and the resist pattern is removed.
    Type: Grant
    Filed: March 10, 1998
    Date of Patent: February 1, 2000
    Assignee: Fujitsu Limited
    Inventor: Satoru Mihara
  • Patent number: 6013417
    Abstract: Circuitry is formed on a substrate having at least one plated through-hole employing two different photoresist materials. A first photoresist is applied on a conductive layer located on a substrate and is developed to define a desired conductive circuit pattern. A second photoresist is laminated onto the structure and is developed so that the second photoresist material remains in the vicinity of the through-hole. The conductive layer is etched to provide the desired circuit pattern, and the remaining portions of the second and first photoresists are removed.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: January 11, 2000
    Assignee: International Business Machines Corporation
    Inventors: Robert David Sebesta, James Warren Wilson
  • Patent number: 6010830
    Abstract: Disclosed is a method for forming a barrier rib of plasma display panel. The method includes the steps of: providing a transparent substrate on which address electrodes having a first thickness are arranged in parallel with each other, a first distance apart from each other; forming a photosensitive paste film on the substrate including the address electrodes; patterning the photosensitive paste film to form a first barrier rib having a second thickness and a first width, wherein the barrier rib is displaced between two adjacent address electrodes; printing a second barrier rib on the first barrier rib by screen printing method; and plasticizing both of the first and second barrier ribs.
    Type: Grant
    Filed: June 24, 1998
    Date of Patent: January 4, 2000
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Hyun Mook Choi, Dae Joong Yoon
  • Patent number: 6010828
    Abstract: The present invention provides a method of and a device for planarizing a photosensitive material, such as a photoresist, located over an irregular surface of a semiconductor wafer. In one embodiment, the method comprises the steps of passing radiation through a first medium and a second medium wherein the first medium is interfaced with the second medium. The method further comprises the steps of passing the radiation from the second medium into the photosensitive material that is interfaced with the second medium to expose the photosensitive material. The first and second mediums and the photosensitive material have radiation absorption coefficients such that the radiation terminates substantially within a plane of the photosensitive material. The method further includes the step of etching the exposed photosensitive material to the plane.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: January 4, 2000
    Assignee: Lucent Technologies Inc.
    Inventor: Maxwell W. Lippitt
  • Patent number: 6007968
    Abstract: The preferred embodiment of the present invention overcomes the limitations of the prior art by providing a method to form unlinked features using hybrid resist. The method uses a trim process in order to trim the linking features from the "loops" formed by the hybrid resist. This allows the method to form a plurality of unlinked features rather than the loops. In order to trim the ends, a relatively larger trim area is formed adjacent the narrow feature line, either by a second exposure step or by utilizing a grey scale reticle. The broader or wider open area allows features to be formed in the narrow feature lines and being trimmed from the relatively large areas, thereby resulting in district features rather than loops.
    Type: Grant
    Filed: October 29, 1997
    Date of Patent: December 28, 1999
    Assignee: International Business Machines Corporation
    Inventors: Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Paul A. Rabidoux
  • Patent number: 5994371
    Abstract: The present invention relates to sulfonate and carbamate derivatives of 3-aroylbenzo[b]thiophenes, pharmaceutical formulations containing these compounds and methods of using such compounds for inhibiting the loss of bone, lowering serum cholesterol levels and therapeutically treating hormone dependent mammalian breast and uterine carcinoma.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: November 30, 1999
    Assignee: Eli Lilly and Company
    Inventors: Larry J. Black, Henry U. Bryant, George J. Cullinan
  • Patent number: 5980783
    Abstract: Stabilizer mixture comprising, for example, a compound of the formula ##STR1## and, for example, a compound of the formula ##STR2##
    Type: Grant
    Filed: April 5, 1996
    Date of Patent: November 9, 1999
    Assignee: Ciba Specialty Chemicals Corporation
    Inventor: Fran.cedilla.ois Gugumus
  • Patent number: 5972164
    Abstract: A method for repulping a wet strength paper is disclosed. Wet strength paper, which contains a wet strength resin, is agitated in water to form an aqueous slurry. An effective amount of a composition that contains a dry mixture of a persulfate and a base in the range of 90:10 to 10:90 is added either before or during agitation, and the slurry heated to produce pulp product for paper manufacture. The persulfate/base combination is capable of breaking down the wet strength resin and adjusting or maintaining the pH at a predetermined level without additional chemical treatment.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: October 26, 1999
    Assignee: FMC Corporation
    Inventors: Frank E. Caropreso, Dean S. Thorp, Robert H. Tieckelmann
  • Patent number: 5932133
    Abstract: New lithium ion conducting materials comprise phthalocyanine rings. These materials function as sites through which the lithium ion passes. In one aspect of the invention, an electrolyte composition consists essentially of a major amount of a lithium phthalocyanine and a minor amount of a polymer binder. In another aspect, an electrolyte composition consists essentially of aligned and spaced lithium phthalocyanine rings, wherein alignment and spacing of the phthalocyanine rings is achieved through the use of ladder type polymers, comb-like polymers, or crystalline polymers.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: August 3, 1999
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Lawrence G. Scanlon, Jr.
  • Patent number: 5906662
    Abstract: The present invention provides a liquid hydrocarbon fuel composition comprising a major amount of a liquid hydrocarbon fuel and, as identifiable marker, a detectable amount of at least one C.sub.7-20 hydrocarbon containing at least one non-aromatic carbocyclic ring of at least 7 ring carbon atoms; and a method of modifying a liquid hydrocarbon fuel which comprises adding to the fuel, as identifiable marker, a detectable amount of at least one C.sub.7-20 hydrocarbon containing at least one non-aromatic carbocyclic ring of at least 7 ring carbon atoms.
    Type: Grant
    Filed: July 15, 1997
    Date of Patent: May 25, 1999
    Assignee: Shell Oil Company
    Inventor: Paul Thomas McCombes
  • Patent number: 5892111
    Abstract: A cure-accelerator for an epoxy resin, which comprises a compound of the formula (I),R.sub.1 R.sub.2 NCONH--Ar--NECONR.sub.3 R.sub.4 (I)wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are C.sub.1 -C.sub.3 lower alkyl groups which may be the same or different, and Ar is a substituted tolylene group of the formula (II) ##STR1## (wherein R.sub.5 and R.sub.6 are C.sub.1 -C.sub.4 lower alkyl groups which may be the same or different) or a 1,5-naphthylene group.
    Type: Grant
    Filed: September 8, 1997
    Date of Patent: April 6, 1999
    Assignee: Hodogaya Chemical Co., Ltd.
    Inventor: Susumu Jinbo
  • Patent number: 5874391
    Abstract: The present invention relates to a polymer thickener for lubricant grease compositions, wherein the thickener comprises a mixture of (1) a high molecular weight (co- or homo-)polymer of propylene with a weight average molecular weight .gtoreq.200,000 and (2) a low molecular weight (co- or homo-)polymer of propylene with a weight average molecular weight .ltoreq.100,000. The invention further relates to a lubricating grease composition comprising a lubricating oil and the above polymeric thickener, as well as a method for preparing said grease composition. Also, the invention relates to the use of such a polymer thickener in the preparation of lubricating grease compositions with improved oil bleeding characteristics at low temperature and improved noise characteristics and/or improved mechanical stability.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: February 23, 1999
    Assignee: SKF Industrial Trading & Development Company B.V.
    Inventors: Dick Meijer, Herman Lankamp
  • Patent number: 5861366
    Abstract: Compositions for use as soil removing agents in the food processing industry are disclosed. Food soiled surfaces in food manufacturing and preparation areas can be cleaned. The compositions are preferably manufactured in the form of a solid block or powder concentrate which is diluted with water and used. The cleaning materials are made in a one or two part system which are diluted with a diluent source and mixed prior to use. The products contain high quality cleaning compositions and use a variety of active ingredients. The preferred materials, in a one or two part system, contain detergent compositions, enzymes that degrade food compositions, surfactants, low alkaline builders, water conditioning (softening) agents, and optionally a variety of formulary adjuvants depending on product form.
    Type: Grant
    Filed: May 21, 1996
    Date of Patent: January 19, 1999
    Assignee: Ecolab Inc.
    Inventors: Deborah A. Ihns, William Schmidt, Francis R. Richter
  • Patent number: 5858029
    Abstract: The invention provides certain hydroxyacetamides which have been prepared by reacting primary etheramines with hydroxycarboxylic acid, particularly etheramine glycolamide, and their use as friction reducing additives in fuels and lubes.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: January 12, 1999
    Assignee: Mobil Oil Corporation
    Inventors: Halou Oumar-Mahamat, James Thomas Carey