Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.

Abstract: A circuit includes an array including a plurality of memory cells; a driver operatively coupled to the array and configured to provide an access signal controlling an access to one or more of the plurality of memory cells; and a timing controller operatively coupled to the driver. The timing controller is configured to: receive a control signal; and in response to the control signal transitioning from a first logic state to a second logic state, adjust a pulse width of the access signal within a single clock cycle containing a first phase and a second phase, wherein the first phase includes reading a first data bit stored in a first one of the one or more memory cells and the second phase includes writing a second data bit into the first memory cell.

Abstract: A row hammer control method and a memory device are provided. The memory device monitors the row hammer address(es) having the number of accesses equal to or more than a predetermined number of times or having a higher number of accesses as compared with other access addresses during the first row hammer monitoring time frame and malicious row hammer address(es) accessed at random sampling time points during the second row hammer monitoring time frame and being the same as the row hammer address(es), notifies a memory controller of the malicious row hammer address(es) when the number of malicious row hammer addresses exceeds a threshold value, and causes a target refresh a memory cell row physically adjacent to a memory cell row corresponding to the malicious row hammer address(es) to be performed.

Abstract: A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory regions each identified by a row address and a column address. The peripheral circuit accesses the memory cell array by performing, based on an address, a burst length and a burst address gap provided from a memory controller, a burst operation supporting a variable burst address gap. The burst address gap is a numerical difference between adjacent column addresses, on which the burst operation is to be performed.

Abstract: A ZQ calibration circuit included in a semiconductor memory device includes a reference voltage selector configured to output a reference voltage selected from among a first reference voltage and a second reference voltage generated based on a first supply voltage and a second supply voltage, in response to a selection signal, a ZQ engine configured to generate a pull-up code and a pull-down code based on the selected reference voltage, and a loop selector configured to output the selection signal according to whether each of the pull-up code and the pull-down code is toggled. Levels of the first and second reference voltages are different from each other, smaller than a level of the first supply voltage, and greater than a level of the second supply voltage.

Abstract: A delay circuit. In some embodiments, a non-transitory computer readable medium includes stored instructions, which when executed by a processor, cause the processor to generate a digital representation of a circuit including: a first inverter, having an input, an output, and two power supply connections; a first current source, electrically coupled in series between a power supply conductor and a power supply connection of the two power supply connections of the first inverter; and a ramp generator circuit, electrically coupled to the input of the first inverter.

Abstract: The disclosure provides improvements for transmitting data between different voltage domains of an IC, such as a chip. The disclosure introduces a data transfer circuit that uses a multi-voltage RAM, referred to herein as MVRAM, for transmitting data across the different voltage domains. The MVRAM has multiple memory cells with write ports and read ports on different clock and voltage domains. Accordingly, a write operation can occur completely on the write domain voltage and the read operation can occur completely on the read domain voltage. In one example, the data transfer circuit includes: (1) write logic operating at a first operating voltage, (2) read logic operating at second operating voltage, and (3) a MVRAM with write ports that operate under the first operating voltage and read ports that operate under the second operating voltage.

Abstract: In certain aspects, a memory device includes a plurality of memory cells and a peripheral circuit coupled to the plurality of memory cells. The peripheral circuit includes a page buffer, which includes a page buffer circuit and control logic coupled to the page buffer circuit. The page buffer circuit includes a dynamic storage unit and a first non-dynamic storage unit. The control logic is configured to determine whether an information swapping process is performed between the dynamic storage unit and the first non-dynamic storage unit based on a type of an operation to be performed on the page buffer circuit and an information storage manner between the dynamic storage unit and the first non-dynamic storage unit. The control logic is further configured to perform the operation on the page buffer circuit based on the determining whether the information swapping process is performed.

Abstract: According to one embodiment, in a semiconductor memory device, the first chip has plural memory cells provided at plural intersection positions where the plural first conductive layers and the plural first semiconductor films intersect each other. The second chip has plural memory cells provided at plural intersection positions where the plural second conductive layers and the plural second semiconductor films intersect each other. A first connection configuration and a second connection configuration are insulated from each other. The first connection configuration reaches the third chip from a first conductive layer that a tip of the first semiconductor film reaches among the plural first conductive layers. The second connection configuration reaches the third chip from a second conductive layer that a tip of the second semiconductor film reaches among the plural second conductive layers.

Abstract: In accordance with an embodiment, a method for characterizing a non-volatile memory, includes: applying a first voltage on a word line conductively coupled to a non-volatile memory cell and measuring a current flowing through the non-volatile memory cell in response to applying the first voltage. Measuring the current includes: using a sense amplifier, comparing the current flowing through the non-volatile memory cell with a plurality of different first currents generated by an adjustable current source while applying the same first voltage on the word line, and determining the measured current based on the comparing.

Abstract: Described apparatuses and methods relate to selectively disabling a die that may be included in a multiple-die package without necessarily disabling all the remaining dies within the package. A nonvolatile circuit, such as one or more fuses, may be included within individual dies and/or otherwise incorporated within the package. The nonvolatile circuit maintains a value for the die that is indicative of the operability of the die. Die disablement logic is operatively coupled to the nonvolatile circuit and can disable the die based on the value indicating that the die is unusable. The disabling of the die by the die disablement logic may be controlled by an override signal that allows the disabling or prevents the logic from disabling the die. Thus, the die disablement logic can prevent a defective die from functioning, but the die disablement logic may be overridden for testing or debugging.

Abstract: The present disclosure provides a memory device and a ZQ calibration method. The memory device includes: two calibration resistor interfaces connected to a same ZQ calibration resistor; a first master chip, a plurality of first slave chips cascaded together, a second master chip, and a plurality of second slave chips cascaded together that are all connected to the ZQ calibration resistor, where first transmission terminals and second transmission terminals are configured to transmit a ZQ flag signal; and an identification module configured to identify a priority calibration chip and a delay calibration chip, and identify the slave chip cascaded with the priority calibration chip as a primary slave chip and the slave chip cascaded with the delay calibration chip as a secondary slave chip.

Abstract: Methods, apparatuses, and systems related to voltage management of memory apparatuses/systems are described. The memory device can include circuitry configured to determine an operating frequency of a clock signal for an ongoing or an upcoming memory operation. The memory device may generate a control indicator for increasing a system voltage for higher operating frequencies, for decreasing the system voltage for lower operating frequencies, or a combination thereof.

Abstract: A storage device includes: an embedding vector manager for determining an estimated access frequency of each of a plurality of embedding vectors, based on a learning data set, and dividing the plurality of embedding vectors into a plurality of embedding vector groups, based on an order of the estimated access frequencies; and a plurality of memory cell arrays for each storing embedding vectors included in any one embedding vector group among the plurality of embedding vector groups.

Abstract: Methods, systems, and devices for voltage detection for managed memory systems are described. In some cases, a memory system may include circuitry to monitor one or more supply voltages to the memory system or voltages generated by the memory system to determine whether a voltage rises above an operational range. In some cases, an overvoltage detector may include an undervoltage detector that has been tuned or manufactured to have a higher threshold than an undervoltage detector used to determine whether a voltage has fallen below the operational range. Accordingly, the memory system may monitor a voltage using an undervoltage detector having a threshold corresponding to a lower bound or lower operation point of the operational range of the monitored voltage and an overvoltage detectors having a threshold corresponding to the upper bound or upper operational point of the operational range.

Abstract: Disclosed herein are related to operating a memory system including memory banks and buffers. Each buffer may perform a write process to write data to a corresponding memory bank. In one aspect, the memory system includes a buffer controller including a queue register, a first pointer register, a second pointer register, and a queue controller. In one aspect, the queue register includes entries, where each entry may store an address of a corresponding memory bank. The first pointer register may indicate a first entry storing an address of a memory bank, on which the write process is predicted to be completed next. The second pointer register may indicate a second entry to be updated. The queue controller may configure the queue register according to the first pointer register and the second pointer register, and configure one or more buffers to perform the write process, according to the entries.

Abstract: An integrated circuit memory device includes a serializer configured to convert a plurality of bits of parallel read data, which are synchronized with a corresponding plurality of clock signals that are out-of-phase relative to each other, into a serial stream of the read data. This conversion is performed using a Boolean logic circuit, which is configured to receive each of the plurality of bits of parallel read data and each of the plurality of out-of-phase clock signals at corresponding inputs thereof.

Abstract: A memory device includes a memory cell array having a plurality of memory cells connected to wordlines and bitlines, a target row refresh logic configured to perform a refresh operation on at least one of target rows of the memory cell array in response to a refresh management mode command, a weak pattern detector that is activated according to a register update bit value included in the refresh management mode command and that outputs a risk level for each of the target rows, and a mode register circuit that updates at least one mode register value according to the risk level.

Abstract: A memory device may include counters respectively corresponding to rows and each configured to count a number of accesses to a corresponding row, a refresh control circuit, a queue, and first flags respectively corresponding to the rows. The refresh control circuit may change a second flag set in a refresh period every refresh period, and determine whether to put an incoming row address into the queue based on a count value of a counter corresponding to a target row indicated by the incoming row address among the counters, a first flag value of a first flag corresponding to the target row among the first flags, and a second flag value of the second flag set in a current refresh period.