Abstract: A controller adapts read voltage thresholds of a non-volatile memory. In one embodiment, in response to selection of a block for adaptation of at least one read voltage threshold applicable to a physical page of the block, the controller issues a dummy read operation to the block to ensure the physical page is in a lower bit error rate (BER) state. The controller waits for a calibration read wait period following the dummy configuration read operation and, during the calibration read wait period, monitors for an interfering access to the non-volatile memory that would temporarily place the physical page in a higher BER state. In response to not detecting the interfering access during the calibration read wait period, the controller performs a calibration read operation for the physical page and adapts at least one read voltage threshold for the physical page based on results of the calibration read operation.

Abstract: A semiconductor device includes a clock gating tree comprising a first clock gating stage and a second clock gating stage. The first clock gating stage is configured to receive an activate detection signal and to activate clocking events in the second clock gating stage in response to the activate detection signal. The clocking events are not activated in the absence of the activate detection signal.

Abstract: Provided herein is a semiconductor memory device. The semiconductor memory device may include a memory cell array including a plurality of memory cells coupled to a plurality of bit lines and a page buffer circuit coupled to the plurality of bit lines and including a plurality of page buffers, wherein the plurality of page buffers sense program states of the plurality of memory cells through the plurality of bit lines during a verify operation or a read operation of a program operation, and wherein the plurality of page buffers perform in an alternate way a latch operation for latching sensing data in accordance with current amounts of the plurality of bit lines.

Abstract: Methods, systems, and devices for periphery fill and localized capacitance are described. A memory array may be fabricated with certain containers connected to provide capacitance rather than to operate as memory cells. For example, a memory cell having one or two transistors, or other switching components, and one capacitor, such as a ferroelectric or dielectric capacitor, may be electrically isolated from one or more containers sharing a common access line, and the isolated containers may be used as capacitors. The capacitors may be used for filtering in some examples. Or the capacitance may be used to boost or regulate voltage in, for example, support circuitry.

Abstract: An integrated circuit OTP memory cell has a programming element with enhanced programmability. The programming element has a doped region at the surface of a semiconductor substrate and a conducting layer partially extending over a surface of the semiconductor surface and along a boundary of the doped region. The conducting layer is displaced from the surface of the doped region and the semiconductor substrate by a thin oxide layer. The partially extending conducting layer provides locations to concentrate electric fields and rupture the gate oxide layer during programming.

Abstract: Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first voltage while applying the first voltage to a second access line, the first access line coupled to a target memory cell of the programming operation and an unselected memory cell not targeted for the programming operation, and the second access line coupled to memory cells not targeted for the programming operation. After increasing the voltage applied to the first access line, increasing the voltage applied to the first access line from the second voltage to a third voltage higher than the second voltage and increasing a voltage applied to the second access line from the first voltage to a fourth voltage higher than the first voltage and lower than the third voltage.

Abstract: Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes an input pad, an input buffer including a first input node and a second input node, a switch that couples the first input node and the second input node in an active state and further decouples the first input node and the second input node in an inactive state, a control circuit that provides a signal causing the switch to be in the active state or an inactive state. The first input node of the input buffer is coupled to the input pad by a conductive wiring.

Abstract: A computing device includes bit line processors, multiplexers and a decoder. Each bit line processor includes a bit line of memory cells and each cell stores one bit of a data word. A column of bit line processors stores the bits of the data word. Each multiplexer connects a bit line processor in a first row of bit line processors to a bit line processor in a second row of bit line processors. The decoder activates at least two word lines of the bit line processor of the first row and a word line in the bit line processor in the second row and enables a bit line voltage associated with a result of a logical operation performed by the bit line processor in the first row to be written into the cell in the bit line processor in the second row.

Abstract: Memory sense amplifiers and memory verification methods are described. According to one aspect, a memory sense amplifier includes a first input coupled with a memory element of a memory cell, wherein the memory element has different memory states at different moments in time, a second input configured to receive a reference signal, modification circuitry configured to provide a data signal at the first input from the memory element having a plurality of different voltages corresponding to respective ones of different memory states of the memory cell at the different moments in time, and comparison circuitry coupled with the modification circuitry and configured to compare the data signal and the reference signal at the different moments in time and to provide an output signal indicative of the memory state of the memory cell at the different moments in time as a result of the comparison to implement a plurality of verify operations of the memory states of the memory cell at the different moments in time.

Abstract: A device includes a combinational circuit configured to create a one or more distortion correction factors used offset inter-symbol interference from a data stream on a distorted bit. The device also includes a selection circuit coupled o the combinational circuit. The selection circuit includes a feedback pin configured to receive a control signal and an output, wherein the selection circuit is configured to select a first distortion correction factor of the one or more distortion correction factors based upon the control signal and transmit the first distortion correction factor from the output.

Abstract: A memory array including a first memory cell including a first memory gate coupled to receive a first signal. The memory array including a second memory cell including a first memory gate coupled to receive a second signal. The magnitude of the second signal is different than the magnitude of the first signal. The memory array including a third memory cell including a first memory gate coupled to receive a third signal. The magnitude of the third signal is different than the magnitude of the first signal and the magnitude of the second signal. The first signal, the second signal and the third signal are received concurrently.

Abstract: The present disclosure includes apparatuses and methods related to performing a greater vector determination in memory. An example apparatus comprises a first group of memory cells coupled to a sense line and to a number of first access lines and a second group of memory cells coupled to the sense line and to a number of second access lines. The example apparatus comprises a controller configured to operate sensing circuitry to compare a value of a first element stored in the first group of memory cells to a value of a second element stored in the second group of memory cells to determine which of the value of the first element and the value of the second element is greater.

Abstract: A system and method for the software and hardware-based management and control of overall energy consumption in a telecommunications network is described. The energy consumption management in broadband telecommunications networks is accomplished via an adaptive power system interface and network energy controller that has access to the energy management systems, subsystems, features, individual components and configurations of equipment and services within the network, and provides energy consumption control of an entire network or a portion thereof using a plethora of different types of equipment, equipment or software features, equipment cards, ports, devices, systems, and entire facilities within a network.

Abstract: According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

Abstract: An airflow control system includes a chassis defining a chassis housing that includes at least one airflow inlet and an airflow outlet. A cooled device is located in the chassis housing between the at least one airflow inlet and the airflow outlet. A convection enhancing heat element is located in the chassis housing between the cooled device and the airflow outlet. A controller is coupled to the convection enhancing heat element and configured to activate the convection enhancing heat element such that a convective airflow through the chassis housing is increased.

Abstract: The present invention relates to a remote managed ballast water treatment system using augmented reality, in particular, a ballast water treatment system (hereinafter, referred to as “BWTS”) which receives operation and failure information from various sensors installed in each component within a device, the remote managed ballast water treatment system comprising: an augmented reality terminal having a software application installed therein, which can recognize each component of the BWTS through shape information in a shot image while shooting a real-time image and provides information on a state of the BWTS and information required for the BWTS (provides augmented reality information), through a computer graphic image, in addition to a real-time image of reality; an augmented reality maintenance apparatus for the BWTS, the apparatus comprising a BWTS interface, an augmented reality interface, a satellite communication interface, and a control unit; and a remote management system of a terrestrial base statio

Abstract: A training controller, semiconductor device and a system including the same are disclosed, which relates to technology for training a phase of data. The training controller may include a read training circuit configured to control a read training operation based on a read signal and a control signal. The training controller may include a write training circuit configured to control a write training operation based on a write signal and a write training signal. The training controller may include a reset controller configured to generate a reset signal when a mismatch occurs in the read training operation or the write training operation.

Abstract: Systems, devices and methods are disclosed. In an embodiment of one such method, a method of decoding received command signals, the method comprises decoding the received command signals in combination with a signal provided to a memory address node at a first clock edge of a clock signal to generate a plurality of memory control signals. The received command signals, in combination with the signal provided to the memory address node at the first clock edge of the clock signal, represent a memory command. Furthermore, the signal provided to the memory address node at a second clock edge of the clock signal is not decoded in combination with the received command signals. The memory command may be a reduced power command and/or a no operation command.

Abstract: According to various embodiments, a method for manufacturing a lens may be provided. The method may include: determining a NURBS (non-uniform rational basis spline) representation of a provisional lens geometry; simulating ray trajectories in a lens with the provisional lens geometry based on the NURBS representation; determining a final lens geometry based on the simulated ray trajectories; and producing a lens with the final lens geometry.

Abstract: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section.