Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: A light source device includes a phosphor layer having a side surface, a bottom surface, and a top surface opposed to the bottom surface, a reflecting member opposed to the side surface of the phosphor layer, a substrate disposed on the bottom surface side of the phosphor layer, and an adhesive adapted to bond the phosphor layer and the substrate to each other. A surface of the substrate located on the phosphor layer side includes a recessed section overlapping the reflecting member on at least an outer side of the phosphor layer in a planar view. A part of the adhesive running off the phosphor layer is received by the recessed section. Fluorescence generated in the phosphor layer is emitted from the top surface and the side surface.

Abstract: An extreme ultraviolet (EUV) light source is provided. The EUV light source comprises a spray nozzle array having a plurality of spray nozzles configured to spray a plurality of rows of droplets to an irradiating position; a laser source configured to generate a first laser beam and a second laser beam and cause the first laser beam and the second laser beam to alternately bombard the rows of droplets to generate EUV light with increased output power; a focusing mirror having at least two first sub-focusing mirrors and at least two second sub-focusing mirrors; and a first driving device having at least two first sub-driving device and at least two second sub-driving device, each of first driving devices driving one of the first sub-focusing mirrors and each of the second sub-driving devices driving one of the second sub-focusing mirrors.

Abstract: MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.

Abstract: A method for sub-diffraction-limited patterning using a photoswitchable layer is disclosed. A sample of the photoswitchable layer can be selectively exposed to a first wavelength of illumination that includes a super-oscillatory peak. The sample can be selectively exposed to a second wavelength of illumination that does not include the super-oscillatory peak. A region in the sample that corresponds to the super-oscillatory peak and is associated with the second transition state can optionally be converted into a third transition state. The region in the sample at the third transition state can constitute a pattern of an isolated feature with a size that is substantially smaller than a far-field diffraction limit.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: Lithography apparatus and device manufacturing methods are disclosed in which means are provided for reducing the extent to which vibrations propagate between a first element of a projection system and a second element of a projection system. Approaches disclosed include the use of plural resilient members in series as part of a vibration isolation system, plural isolation frames for separately supporting first and second projection system frames, and modified connection positions for the interaction between the first and second projection system frames and the isolation frame(s).

Abstract: A linear stacked stage suitable for REBL may include a first upper fast stage configured to translate a first plurality of wafers in a first direction along a first axis, the first upper fast stage configured to secure a first plurality of wafers; a second upper fast stage configured to translate a second plurality of wafers in a second direction along the first axis, the second upper fast stage configured to secure the second plurality of wafers, the second direction opposite to the first direction, wherein the translation of the first upper fast stage and the translation of the second upper fast stage are configured to substantially eliminate inertial reaction forces generated by motion of the first upper fast stage and the second upper fast stage; and a carrier stage configured to translate the first and second upper fast stages along a second axis.

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: Systems and method directed to digital pattern generator (DPG) having a mirror array in an e-beam lithography system are discussed. The mirror array includes a first bank of mirrors and a second bank of mirrors with a combination logic structure interposing the first and second banks of mirrors. An output data line extends from the first bank of mirrors to the combinational logic structure. An input data line that carries data associated with the second bank of mirrors is also provided to the combinational logic structure. An output data line extends from the combinational logic structure to second data bank.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.

Abstract: A projector includes a projecting unit including a projection optical system and configured to project an image on a screen SC, a lens driving unit configured to perform focus adjustment for the projection optical system, a trapezoidal-distortion correcting unit configured to perform distortion correction processing for correcting distortion of the image projected by the projecting unit, and a projection control unit configured to cause the trapezoidal-distortion correcting unit to execute the distortion correction processing until a completion condition for the distortion correction processing holds after a start condition for the distortion correction processing holds and restrict the execution of the focus adjustment by the lens driving unit while the projection control unit causes the trapezoidal-distortion correcting unit to execute the distortion correction processing.

Abstract: In order to cool the discharge lamp, cooling air generated by first and second cooling fans conveyed via first and second ducts into first and second lamp-cooling air inlets of the discharge lamp, and is blown into the discharge lamp. The first and second lamp-cooling air inlets are disposed so as to be symmetrical with respect to the optical axis of the discharge lamp, and are divided into a plurality of air inlets each having different opening surface areas. Having passes through the plurality of air inlets and diverging into a plurality of air currents, the cooling air is respectively blown to different parts of the discharge lamp. The rotational frequency of the first and second cooling fans is optimally controlled in accordance with the installation position (S) of the projector device.

Abstract: A fuel stream generator comprising a nozzle connected to a fuel reservoir, wherein the nozzle is provided with a gas inlet configured to provide a sheath of gas around fuel flowing along the nozzle is disclosed. Also disclosed are a method of generating fuel droplets and a lithography apparatus incorporating the fuel stream generator.

Abstract: A positioning system for controlling a relative position between a first component and a second component of a lithographic apparatus, wherein a position of each component is defined by a set of orthogonal coordinates, the positioning system including: a measuring device configured to determine an error in the momentary position of one of the components with respect to a setpoint position in a measurement coordinate; and a controller configured to control movement of the other component in a control coordinate based on the determined error; wherein the measurement coordinate is different from the control coordinate.

Abstract: A solid state illumination system is provided for image projection. Red, green and blue light is generated using a blue laser light source and phosphor emissions. The red, green and blue light is passed by TIR or TRIR elements of red, green and blue light channels of an X-cube prism structure for separate modulation by different spatial light modulators. The modulated red, green and blue light is passed by the TIR or TRIR elements into the X-cube and combined into a combined modulated RGB image forming light stream for image formation via projection optics onto a target imaging surface.

Abstract: In a method for operating a microlithographic projection exposure apparatus, a facet mirror is illuminated with projection light having a center wavelength of between 5 nm and 30 nm. The facet mirror has a plurality of adjustable mirror facets, wherein groups of adjacent mirror facets form regions which are imaged by an optical unit onto an object plane of a projection objective of the projection exposure apparatus. There the images of the regions are superimposed in an object field. An illumination field, which is identical to the object field or a part thereof, is illuminated with the projection light. A mask containing structures to be imaged is moved in the object plane of the projection objective in such a way that the illumination field scans over the mask. According to the invention, during step c) the size of the illumination field is varied by adjusting at least one mirror facet.

Abstract: An immersion lithography apparatus includes a lens system, an immersion hood, a wafer stage, an inspection system and a cleaning fluid supplier. The lens system is configured to project a pattern onto a wafer. The immersion hood is configured to confine an immersion fluid between the lens system and the wafer, and includes a peripheral hole configured to suck up the immersion fluid. The wafer stage is configured to position the wafer under the lens system. The inspection system is configured to detect whether there is contamination in the peripheral hole. The cleaning fluid supplier is coupled to the inspection system and configured to supply a cleaning fluid through the peripheral hole to remove the contamination, in which the inspection system and the cleaning fluid supplier are coupled to the wafer stage.

Abstract: The spatial light modulator is provided with: a substrate; a fixed electrode disposed on a surface of the substrate; a connecting section, which has one end of the connecting section connected to the surface of the substrate; a movable section, which is connected to another end of the connecting section; a supporting post section, which extends in the thickness direction of the substrate with one end of the supporting post section connected to the movable section; a reflecting member, which is connected to another end of the supporting post section; a movable electrode, which is disposed on a surface of the reflecting member, the surface of the reflecting member facing the fixed electrode; and a conductive layer, which is disposed on the supporting post section with a film thickness larger than that of the movable electrode, and which electrically connects between the movable section and the movable electrode.

Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.