Abstract: A semiconductor defect inspection apparatus for inspecting a specimen including a semiconductor substrate having a surface on which a predetermined pattern is formed, includes an excitation light irradiator, a polarization converter, a detector, and a defect analysis detector. The excitation light irradiator irradiates the specimen with excitation light along an optical path from the irradiator to the specimen and such that the excitation light is obliquely incident at a predetermined incident angle. The first polarization converter is disposed in the optical path, and converts the excitation light into s-polarized light. The detector detects photoluminescence light generated from the specimen when the excitation light is incident on the specimen. The defect analysis detector detects a dislocation defect by analyzing a photoluminescence image obtained by photoelectrically converting the photoluminescence light.

Abstract: A position measurement system configured to measure a position of an object, the system including: a displacement interferometer having a first capture range; a time-of-flight sensor having a second capture range that is larger than the first capture range and having an inaccuracy that is smaller than the first capture range; and a processing unit, wherein the position measurement system has a zeroing mode in which the processing unit is configured to determine a coarse position of the object within the second capture range based on an output from the time-of-flight sensor, and in which the processing unit is configured to determine a fine position of the object based on the determined coarse position and an output from the displacement interferometer.

Abstract: A semiconductor inspection system according to an embodiment includes first imaging unit capturing an image of a first lead of a semiconductor package from a first direction perpendicular to an upper surface, the semiconductor package including a sealing portion and the first lead, the sealing portion having the upper surface, the first lead extending sideward from the sealing portion; first calculation unit calculating a front length of the first lead from the image captured by the first imaging unit; second imaging unit capturing an image of the first lead from a second direction inclined to the upper surface; second calculation unit calculating an oblique length of the first lead from the image captured by the second imaging unit; and third calculation unit calculating an amount of floating of the first lead from a reference plane parallel to the upper surface, using the front length and the oblique length.

Abstract: An exposure apparatus includes a projection optical system configured to project a pattern of a mask onto a substrate, a substrate stage configured to hold and move the substrate, and a controller configured to control exposure of the substrate held by the substrate stage, wherein the controller obtains an amount of deviation of an image of the pattern projected onto the substrate with respect to the pattern of the mask based on telecentricity information, which is information on telecentricity for respective image heights of the projection optical system, and height information, which is information on the height of a surface of the substrate, and corrects deviation of the image based on the obtained amount of deviation to expose the substrate.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: An optical system for a microlithographic projection exposure apparatus for operation in the EUV includes a polarization-influencing arrangement having first and one second double reflection surface units, each having first and second reflection surfaces, in each case arranged directly adjacent at a distance d1 and at an angle of 0°±10° relative to one another. The first reflection surface of the first double reflection surface unit and the second reflection surface of the second double reflection surface unit are arranged directly adjacent at a distance d2 and at an angle of 0°±10° relative to one another, with d2>5*d1. Light incident on the first reflection surfaces forms an angle of 43°±10° with the first reflection surfaces. Light incident on the first reflection surface of the first double reflection surface unit is reflected toward the second reflection surface of the second double reflection surface unit.

Abstract: A mask for cleaning a lithography apparatus includes a mask substrate and a coating provided on a surface of the mask substrate. The coating is configured to trap particulate contaminant matter from the lithography apparatus. A method of cleaning a lithography tool is also provided preparing a cleaning mask including a particle trapping layer formed on a substrate. The method includes transferring the cleaning mask through a mask transferring route of the lithography tool. Subsequently, the method includes analyzing a particle trapped by the particle trapping layer.

Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The magnetic substrate has a magnetic field, and the paramagnetic part has an induced magnetic field in a direction of the magnetic field of the magnetic substrate. The paramagnetic part includes a rough surface defined by a plurality of protrusion structures of the paramagnetic part. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Abstract: 3D measurements of features on a workpiece, such as ball height, co-planarity, component thickness, or warpage, are determined. The system includes a broadband light source, a microlens array, a tunable color filter, a lens system, and a detector. The microlens array can focus a light beam to points in a focal plane of the microlens array. The tunable color filter can narrow the light beam to a band at a central wavelength. The lens system can provide longitudinal chromatic aberration whereby different wavelengths are imaged at different distances from the lens system.

Abstract: A sensor system for measuring and locating parameters of a structure includes a robot configured to move between a first position and a second position along the structure. An inspection sensor is coupled to the robot and configured to measure a parameter associated with the structure. A localization sensor suite includes an inertial measurement unit and is configured to capture data associated with translational degrees of freedom and a rotational degree of freedom of the robot determined by the structure and an image capture system mounted to the robot. The image capture system acquires images of the structure. One or more processors is operatively connected to the localization sensor suite. The one or more processors is responsive to non-transitory executable computer instructions for generating a map of the route including features of the structure, the measured parameters, and a position of the robot relative to the structure.

Abstract: A position detection device for adjusting positions of a mold and a substrate using a mold mark formed on the mold and a substrate mark formed on the substrate includes a detection unit configured to detect light from the mold mark and the substrate mark, and a processing unit configured to obtain a positional relationship between the substrate and the mold based on a detection result of the detection unit, wherein the processing unit obtains the positional relationship between the substrate and the mold based on a corrected signal obtained by removing a noise component based on the light from the mold mark from a detected signal based on the light from the mold mark and the substrate mark.

Abstract: According to an aspect of the present invention, there is provided a pattern structure inspection method including irradiating a wave from a wave source onto a sample including a pattern region in which a structure having a certain pattern is provided on a substrate, collecting speckle data generated due to multiple scattering of the wave in the pattern region, by using a data collector, and analyzing whether the structure of the pattern region has a defect, by comparing the collected speckle data to reference speckle data.

Abstract: An apparatus displays a plurality of lines representing a plurality of cracks occurring in a structure on a display unit, accepts an instruction to change a display state of the plurality of lines on the display unit, assigns order in which the display state is changed based on the instruction to each of a plurality of lines constituting one connecting point among the plurality of lines, and changes the display state of each of the plurality of lines constituting the one connecting point based on the order assigned by the assignment unit in response to acceptance of the instruction.

Abstract: A system for managing liquid supply is provided. The system includes an air pressure adjustor, a first liquid container, a second liquid container, a first tube, a second tube, an inlet sensor, and an outlet sensor. The first liquid container includes a liquid. The second liquid container includes an inlet and an outlet. The first tube is configured to be connected between the first liquid container and the inlet. The second tube is configured to be connected between the outlet and the air pressure adjustor. The inlet sensor is disposed on the first tube and for detecting the liquid flowing into the inlet. The outlet sensor is disposed on the second tube and for detecting the liquid flowing out from the outlet.

Abstract: A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moiré pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moiré pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.

Abstract: Methods and apparatus for processing an image of a beam generated by an optical system to extract information indicative of an extent of damage to optical elements in the optical system. Also disclosed is a beam image and analysis tool capable of acquiring an image of a beam at any one of a number of locations.

Abstract: An apparatus, for example a lithography apparatus or a multi-mirror system, includes comprises a radiation source for generating radiation, a plurality of optical components for guiding the radiation in the apparatus, a plurality of actuator/sensor devices for the optical components, and a drive device for driving the actuator/sensor devices.

Abstract: Apparatus and method for directly curing photopolymer printing plates, such as with UV radiation. Printing plates are cured directly by radiation, such as emitted from a high power UV laser beam. No LAMS layer or film bearing the image information is required on top of the polymer plate. The laser beam may be split into several individually-modulated beams by means of an Acousto Optical Deflector. Each individual beam is capable of curing pixels of the image that are to be transferred to the printing plate. Support shoulders for the printing details, formed by the pixels are determined by the caustic of the UV beam propagation.

Abstract: A semiconductor device inspection device includes a semiconductor device stage, a sound wave generator, a laser emitter, a photoreceiver, and a processing circuit. The sound wave generator is configured to generate a sound wave having a natural frequency of a bonding wire included in a semiconductor device placed on the semiconductor device stage. The laser emitter is configured to direct laser toward the bonding wire while the sound wave generator generates the sound wave. The photoreceiver is configured to receive the laser reflected by the bonding wire and output a signal corresponding to the received laser. The processing circuit is configured to detect a bonding failure of the bonding wire based on the signal output by the photoreceiver.

Abstract: Disclosed method of measuring a parameter relating to a structure formed using a lithographic process, and more specifically focus or line edge roughness. The method includes measuring a structure having a dimension, e.g., a critical dimension, which is sufficiently large to enable radiation diffracted by at least one edge of said structure to be (e.g., individually) optically resolved. The method comprises obtaining an intensity metric from an image of the at least one edge and determining a value for said parameter based on the intensity metric.