Abstract: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

Abstract: A method for producing flexographic printing plates, using a photopolymerizable flexographic printing element having, arranged one atop another, a dimensionally stable support, a photopolymerizable, relief-forming layer, an elastomeric binder, an ethylenically unsaturated compound, and a photoinitiator, and optionally a rough, UV-transparent layer, a particulate substance, and digitally imagable layer. The method includes: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photpolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development.

Abstract: A shutter blade assembly for a photolithography machine, a large-field of view (FoV) photolithography machine and an exposure method are disclosed. A scanning-directional shutter blade subassembly is moved once during each illuminance test and then moved above alignment marks after the test. During exposure, the scanning-directional shutter blade subassembly moves with a mask stage in the same direction and at the same speed so that it stays stationary relative to the alignment marks on a photomask (4). In case of full-FoV exposure, it is not necessary for a non-scanning-directional shutter blade subassembly to be moved, while in case of partial-FoV exposure, it is moved into the partial exposure FoV and defines there a window for obtaining a light spot with a desired shape by modulating illumination light.

Abstract: Embodiments related to systems and methods of crack detection in wafers (e.g., silicon wafers for photovoltaics, photovoltaic devices including silicon wafers) are disclosed. In some embodiments, an apparatus may include a light source configured to illuminate a side of a wafer and a camera directed towards a first face of the wafer. In some embodiments, a long axis of a field of view of the camera may be angled relative to a propagation direction of the light source. In some embodiments, at least a portion of the field of view of the camera is offset from the path of propagation of light emitted from the light source through the wafer. In some embodiments, at least a portion of a light beam may be oriented at a positive non-zero angle relative to the first face of the wafer, and a dimension of the light beam normal to the first face of the wafer may be larger than a thickness of the wafer.

Abstract: Roughness measurement probe (15) for scanning a surface (F), comprising an integratingly operating device (20) and an optical scanning device (30), wherein the optical scanning device (30) is arranged directly on or in the integratingly operating device (20), wherein the integratingly operating device (20) is designed, when scanning the surface (F), to predetermine a mean distance between the roughness measuring probe (15) and a larger region of the surface (F), and wherein the optical scanning device (30) is designed, when scanning the surface (F), to optically scan a smaller region of the surface (F) in a contactless manner, wherein the integratingly operating device (20) comprises an optical arrangement which is designed as a virtual skid in such a way that it images a light spot (LF) on the surface (F).

Abstract: An optical system and detector capture a distribution of radiation modified by interaction with a target structure. The observed distribution is used to calculate a property of the structure (e.g. CD or overlay). A condition error (e.g. focus error) associated with the optical system is variable between observations. The actual condition error specific to each capture is recorded and used to apply a correction for a deviation of the observed distribution due to the condition error specific to the observation. The correction in one practical example is based on a unit correction previously defined with respect to a unit focus error. This unit correction can be scaled linearly, in accordance with a focus error specific to the observation.

Abstract: Embodiments of the present disclosure provide methods for producing images on substrates. The method includes providing a p-polarization beam to a first mirror cube having a first digital micromirror device (DMD), providing an s-polarization beam to a second mirror cube having a second DMD, and reflecting the p-polarization beam off the first DMD and reflecting the s-polarization beam off the second DMD such that the p-polarization beam and the s-polarization beam are reflected towards a light altering device configured to produce a plurality of superimposed images on the substrate.

Abstract: Embodiments of the present disclosure generally provide improved photolithography systems and methods using a digital micromirror device (DMD). The DMD comprises columns and rows of micromirrors disposed opposite a substrate. Light beams reflect off the micromirrors onto the substrate, resulting in a patterned substrate. Certain subsets of the columns and rows of micromirrors may be positioned to the “off” position, such that they dump light, in order to correct for uniformity errors, i.e., features larger than desired, in the patterned substrate. Similarly, certain subsets of the columns and rows of micromirrors may be defaulted to the “off” position and selectively allowed to return to their programmed position in order to correct for uniformity errors, i.e., features smaller than desired, in the patterned substrate.

Abstract: The inspection system includes an illumination source, a TDI-CCD sensor, and a dark field/bright field sensor. A polarizer receives the light from the light source. The light from the polarizer is directed at a Wollaston prism, such as through a half wave plate. Use of the TDI-CCD sensor and the dark field/bright field sensor provide high spatial resolution, high defect detection sensitivity and signal-to-noise ratio, and fast inspection speed.

Abstract: A method, includes illuminating a structure of a metrology target with radiation having a linear polarization in a first direction, receiving radiation redirected from the structure to a polarizing element, wherein the polarizing element has a polarization splitting axis at an angle to the first direction, and measuring, using the sensor system, an optical characteristic of the redirected radiation.

Abstract: The present invention is directed to a method and apparatus for maintaining a surface of an optical component free of foreign particles using passive and active approaches to particle control.

Abstract: On a substrate conforming to a layout method for a plurality of marks for detection using a plurality of mark detection systems of which the detection centers are arranged at a predetermined spacing along an X-axis direction, a plurality of shot areas are formed in both an X-axis direction and a Y-axis direction orthogonal thereto in an XY plane, and sets including at least two marks separated in the X-axis direction are repeatedly arranged along the X-axis direction at spacing of a length in the X-axis-direction of each shot area, and the marks belonging to each set are separated from each other in the X-axis direction by a spacing determined based arrangement in the X-axis direction of the plurality of mark detection systems and the length. It is thereby possible to reliably detect a plurality of marks on a substrate using a plurality of mark detection systems.

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

Abstract: In the embodiments disclosed herein, an approach based on a mask function M is disclosed. This approach meets the requirement of the Hopkins model and at the same time incorporates the incident angle effects of a given partially coherent illumination. The new mask function M is referred to as a partially coherent mask function (PCMF). In the embodiments disclosed herein, the incident angle effects of individual source points of a given partially coherent illumination are removed from the mask function M and incorporated into a source function G. As a result, use of the partially coherent mask function M does not require an integration over individual plane waves in the illumination, as would be the case with a rigorous mask function M. Therefore, the Hopkins model can be used with partially coherent mask function M and at the same time capture the incident angle effects.

Abstract: A measurement apparatus measures an optical characteristic with high robustness and with a simple configuration. A measurement apparatus of the present invention measures optical characteristic of a sample. The measurement apparatus includes an irradiation unit to irradiate the sample with light emitted from a light source and transmitted through an opening member, an imaging unit to detect an image formed by the light irradiated by the irradiation unit and reflected by the sample, and a processing unit to obtain the optical characteristic of the sample on the basis of an output of the imaging unit. The opening member comprises plural openings through which the light emitted from the light source is transmitted, the irradiation unit irradiates the sample with the light transmitted through the plurality of openings, and the imaging unit detects an image formed by the light transmitted through the plurality of openings and reflected by the sample.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: An illumination device includes a blue laser emitting element, a red laser emitting element, a diffusely reflecting element configured to diffuse and reflect a part of light from the blue laser emitting element, a phosphor, a bandpass filter provided to the phosphor to transmit light from the red laser emitting element, a polarization splitting/combining element having a polarization split function, and a first wave plate disposed between the polarization splitting/combining element and the diffusely reflecting element. The polarization splitting/combining element guides a blue first polarization component to the diffusely reflecting element and guides a blue second polarization component to the phosphor. Then, the polarization splitting/combining element combines the fluorescence, the light from the red laser emitting element entering a second surface of the phosphor and then emitted from a first surface, and blue diffused light with each other to generate illumination light.

Abstract: A light source apparatus includes a blue laser light emitter, a red laser light emitter, a phosphor that produces yellow fluorescence, a first optical element that combines the yellow fluorescence with a second component of the blue laser light to produce first combined light containing a red component, a green component, and a blue component, a second optical element that reflects the red laser light, transmits a first polarized component in the red component, reflects a second polarized component in the red component, transmits the green component and the blue component, and combines the red laser light, the first polarized component, the green component, and the blue component with one another to produce second combined light, a retardation film provided at a downstream side of the second optical element, and a third optical element that combines part of third combined light with the second polarized component to produce illumination light.

Abstract: An inspection method for optical components that can be implemented to conform to performance specification MIL-PRF-13830 in order to grade surface imperfections, in particular scratches and digs. A dark-field microscope obtains a digital image of the component, and this digital image is processed to determine scratch and dig numbers. For scratches, the number is obtained by dividing the total intensity of the scratch by the scratch length. For digs, the number is obtained by determining dig diameter or by dividing the dig's total intensity by its area. According to our extensive testing, this automated digital image processing approach appears to faithfully mimic the subjective impression that a scratch makes on an expert inspector who is applying the visibility test of MIL-PRF-13830.