Abstract: A device comprises a control gate structure and a memory gate structure over a substrate, a charge storage layer formed between the control gate structure and the memory gate structure, a first spacer along a sidewall of the memory gate structure, a second spacer along a sidewall of the control gate structure, an oxide layer over a top surface of the memory gate structure, a top spacer over the oxide layer, a first drain/source region formed in the substrate and adjacent to the memory gate structure and a second drain/source region formed in the substrate and adjacent to the control gate structure.

Abstract: A semiconductor device includes a conductive feature over a substrate, a ruthenium-containing feature disposed over the conductive feature, and a first barrier layer disposed over the conductive feature and over sidewalls of the ruthenium-containing feature. The semiconductor device also includes a second barrier layer disposed over sidewalls of the first barrier layer, and a third barrier layer disposed over sidewalls of the second barrier layer. The first, second, and third barrier layers include different material compositions.

Abstract: An LED package structure and a carrier thereof are provided. The LED package structure includes a carrier, a plurality of LED chips, and an encapsulating colloid. The carrier includes a substrate, a ring-shaped first wall disposed on the substrate, and a ring-shaped second wall stacked on the first wall. A portion of the substrate surrounded by the first wall is defined as a die-bonding region, and the first wall, the second wall, and the die-bonding region jointly define an accommodating space. The LED chips are mounted on the die-bonding region and are arranged in the accommodating space. The encapsulating colloid is filled within the accommodating space, and the LED chips are embedded in the encapsulating colloid.

Abstract: A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.

Abstract: A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

Abstract: An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

Abstract: A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Abstract: The present invention seeks to provide cadmium-free quantum dots with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium or zinc and tellurium and sulfur or zinc and tellurium and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active area defined by sidewalls of neighboring trenches. A layer of dielectric material is blanket deposited over the memory cell, and etched to form spacers on sidewalls of the active area. Dielectric material is formed over the active area, a charge trapping structure is formed over the dielectric material over the active area, and a control gate is formed over the charge trapping structure. In some embodiments, the charge trapping structure includes nanodots. In some embodiments, the width of the spacers is between about 130% and about 170% of the thickness of the dielectric material separating the charge trapping material and an upper surface of the active area.

Abstract: A semiconductor structure includes a substrate, a gate structure disposed over the substrate, a dielectric material disposed over the substrate and the gate structure, a conductive structure extending within the dielectric material, and a void extending within the dielectric material and disposed over the gate structure.

Abstract: Integrated circuit layouts are disclosed that include metal layers with metal tracks having separate metal sections along the metal tracks. The separate metal sections along a single track may be electrically isolated from each other. The separate metal sections may then be electrically connected to different voltage tracks in metal layers above and/or below the metal layer with the separate metal sections. One or more of the metal layers in the integrated circuit layouts may also include metal tracks at different voltages (e.g., power and ground) that are adjacent to each other within a power grid layout. The metal tracks may be separated by electrically insulating material. The metal tracks and the electrically insulating material between the tracks may create capacitance in the power grid layout.

Abstract: The light-emitting device includes a display unit in which rectangular light-emitting pixels are arranged, and a light-shielding portion that defines a light-emitting region in the display unit and shields light in a region other than the light-emitting region of the display unit, and at least a part of a boundary between the light-emitting region and the light-shielding portion has a curved shape.

Abstract: Display structures for controlling viewing angle color shift are described. In various embodiments, polarization sensitive diffusers, independent controlled cathode thicknesses, filtermasks, touch detection layers, and color filters are described.

Abstract: Provided is a semiconductor device. The device comprises an epitaxial layer that constitutes a part of an active cell region and is doped with impurities of a first conductivity type at a first concentration; a field stop region that is located below the epitaxial layer and doped with impurities of a second conductivity type at a second concentration which are then activated; and a collector region that is located below the field stop region 70 and is doped with impurities of a second conductivity type. The field stop region is formed by repeatedly alternately arranging regions in which the activation of the impurities of the first conductivity type is relatively strong and regions in which the activation of the impurities of the first conductivity type is relatively weak.

Abstract: A method includes encapsulating structures disposed on or over a surface of a substrate in an encapsulant. The method also includes separating the encapsulant from the substrate. An apparatus includes a composite film having structures embedded in an encapsulant. The composite film has a surface with a surface roughness of less than one nm. An apparatus includes an encapsulant film having a surface with indentations formed therein. The surface has a surface roughness apart from the indentations of less than one nm.

Abstract: Embodiments relate to forming an elastomeric interface layer (elayer) with a flap over multiple light emitting diode (LED) dies by forming materials across multiple LED dies and removing the materials between the LED dies. The formed flap of the elayer provides a large surface area for adhesion between each LED and a pick-up surface. For example, the flap may have a surface area that is larger than the light emitting surface of the LED die, or larger than the surface area of an elastomeric interface layer without the flap. As such, the elayer allows each LED to be picked up by a pick-up surface and placed onto a display substrate including control circuits for sub-pixels of an electronic display. In some embodiments, the LED dies are micro-LED (?LED) dies.

Abstract: A semiconductor device includes a channel structure, a dielectric structure, a gate structure, a first conductive structure, and a second conductive structure. The channel structure has a top surface, a bottom surface, and a sidewall extending from the top surface to the bottom surface. The first conductive structure is disposed on the bottom surface of the channel structure and includes a body portion and at least one convex portion, and a top surface of the convex portion is higher than a top surface of the body portion. The second conductive structure is disposed on the top surface of the channel structure and includes a body portion and at least one convex portion, and a bottom surface of the body portion is higher than a bottom surface of the convex portion.

Abstract: A light-emitting device includes: a light-emitting element; a coating member that covers the light-emitting element; and two external connection electrodes exposed form a first surface of the coating member. Each of the external connection electrodes includes an electrode buried in the coating member; and a metal layer formed on the electrode. A surface of each of the metal layers is exposed from the first surface of the coating member. The first surface of the coating member includes a plurality of grooves between the external connection electrodes.

Abstract: A radiation emitting device comprising light scattering particles of different sizes that at least partially surround an emitter, improving the spatial color mixing and color uniformity of the device. Multiple sizes of light scattering particles are dispersed in a medium to at least partially surround a single- or multiple-chip polychromatic emitter package. The different sizes of light scattering particles interact with corresponding wavelength ranges of emitted radiation. Thus, radiation emitted over multiple wavelength ranges or sub-ranges can be efficiently scattered to eliminate (or intentionally create) spatially non-uniform color patterns in the output beam.

Abstract: Electrostatic discharge (ESD) protection device is provided. An ESD device includes a substrate having an input region; a plurality of fins on the substrate in the input region; a well region, doped with first-type ions, in the plurality of fins and in the substrate; an epitaxial layer on each fin in the input region; a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions.