Patents Examined by Todd J. Burns
  • Patent number: 4990212
    Abstract: The described device includes a bearing element positioned to engage a bead core and subjected to the action of a friction wheel acting in such a way as to make the bead core rotate around its own axis. Two pressure discs arranged specularly with respect to the lying median plane of the bead core act on opposite sides of a filler to apply the same on the outer peripheral chafer of the bead core while this latter is rotating. The pressure discs lie according to respective planes convergent toward the bead core and divergent in the sense of rotation of the bead core to favor the release of the filler from the pressure discs. The pressure discs are thrust on the filler through a pneumatic cylinder which exerts a constant force on an oscillating support according to an axis parallel to the bead core axis and bearing the discs themselves.
    Type: Grant
    Filed: May 16, 1989
    Date of Patent: February 5, 1991
    Assignee: Pirelli Coordinamento Pneumatici S.p.A.
    Inventor: Augusto Pizzorno
  • Patent number: 4988407
    Abstract: This invention relates to the production of dry black liquor solids and more particularly to a process and apparatus for producing such solids having a moisture content below five percent water by weight. The process includes supplying a first stream of black liquor having a solids content in a range such that the first stream flows as a viscous liquid, supplying a second stream of black liquor solids having a solids content in a range such that the second stream flows as a friable granular dry solid, and mixing the first and second streams of black liquor solids and producing an output stream having a solids content such that the output stream flows as a dry solid.
    Type: Grant
    Filed: November 30, 1989
    Date of Patent: January 29, 1991
    Inventor: Donald I. Parker
  • Patent number: 4988403
    Abstract: The present invention provides a method of forming a patterned silicone rubber layer on a surface of a workpiece such as a silicone wafer. According to the method, a polyimide film is first formed on the workpiece surface, and subsequently etched by lithography in a predetermined pattern. Then, a silicone rubber layer is formed on the workpiece surface over the patterned polyimide film by spin coating, and thereafter etched by plasma etching until the patterned polyimide film is exposed. Finally, the remaining polyimide film alone is completely etched away, so that the pattern previously given to the polyimide film is copied to the silicone rubber layer in a negative fashion.
    Type: Grant
    Filed: December 19, 1989
    Date of Patent: January 29, 1991
    Assignee: Rohm Co., Ltd.
    Inventor: Kozo Matuo
  • Patent number: 4986881
    Abstract: It is desirable to be able to treat medium consistency (e.g. about 8-12% by weight) paper pulp suspensions with treatment liquid (e.g. a wash liquid), and to thicken the pulp to about 30-50% consistency at the same time. A moving (e.g. rotating) channel is defined by a root wall and upstanding side walls--some or all of which are perforated--and treatment liquid is introduced by an arcuately elongated distributor with perforated side walls into the center of the pulp within the channel, filtrate flowing out through the perforated walls. A pivoted wall portion of the stationary housing of the treatment device restricts outflow of the thickened pulp cake from the device, the cake flowing between a doctor blade and the pivoted wall portion.
    Type: Grant
    Filed: June 28, 1989
    Date of Patent: January 22, 1991
    Assignee: Kamyr, Inc.
    Inventor: Erwin D. Funk
  • Patent number: 4985098
    Abstract: Disclosed is a method of manufacturing a ceramic laminate which is adapted to manufacture a laminated ceramic capacitor, for example. This method includes the steps of stacking a plurality of ceramic green sheets containing ceramic powder and a first binder on a base and forming a metal paste film containing metal powder and a second binder for providing an internal electrode on an upper major surface of a prescribed one of the ceramic green sheets during the stacking step. In such a method, a junction member containing a solvent which can commonly dissolve the first and second binders is prepared in order to join the plurality of ceramic green sheets with no application of pressure, to be applied between adjacent pairs of plurality of ceramic green sheets, which are stacked with each other. The junction member joins the adjacent pairs of ceramic green sheets with each other through chemical action.
    Type: Grant
    Filed: February 16, 1989
    Date of Patent: January 15, 1991
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yoshiaki Kohno, Norio Sakai
  • Patent number: 4985114
    Abstract: A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
    Type: Grant
    Filed: October 6, 1989
    Date of Patent: January 15, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Sadayuki Okudaira, Hiroshi Kawakami, Tokuo Kure, Kazunori Tsujimoto, Shinichi Tachi
  • Patent number: 4980076
    Abstract: Problems with previously known aqueous acidic rinsing solutions for aluminum after shaping while using surface lubricants are avoided by use of a solution which contains water and (A) orthophosphoric acid in an amount to give a stoichiometric equivalent of 3.0 to 50 g/L as PO.sub.4.sup.-3, (B) an aluminum ion sequestrant component in an amount of 0.01 to 10.0 g/L; and (C) 20 to 170 ppm of ferric ion. The ferric ions act to inhibit corrosion of the stainless steel process equipment. Preferably the solution also contains 0.1 to 1.0 g/L of H.sub.2 O.sub.2, NO.sub.2.sup.-1 ions, or a mixture thereof to reoxidize ferrous ions formed by reduction of ferric ions during use of the solution and thus maintain the concentration of ferric ions above 20 ppm at all times. The solution may also contain surfactant and up to 10 g/L of dissolved aluminum ions.
    Type: Grant
    Filed: September 6, 1989
    Date of Patent: December 25, 1990
    Assignee: Nihon Parkerizing Co., Ltd.
    Inventors: Shigeo Tanaka, Tomoyuki Aoki, Yasuo Iino, Yoji Ono
  • Patent number: 4980019
    Abstract: An apparatus and a method to inhibit sputtering of undesirable material on to a dielectric layer of an integrated circuit being etched. After exposing the integrated circuit within its package, the leads of the integrated circuit are electrically coupled together by a metallic foil. The metallic foil is wrapped about the package to also provide thermal coupling, however, the integrated circuit is left exposed. Then, the integrated circuit is placed onto an etch-resilient plate disposed atop a cathode electrode. An opening in the plate allows direct placement of the integrated circuit onto the cathode. An etch-resilient cover is placed above the plate opening and the integrated circuit, but the cover has an opening to expose the integrated circuit. During etching, the cover inhibits sputtering from the leads, preform and bond wires.
    Type: Grant
    Filed: July 28, 1989
    Date of Patent: December 25, 1990
    Assignee: Intel Corporation
    Inventors: William Baerg, Valluri R. M. Rao
  • Patent number: 4979973
    Abstract: The invention provides a method for the preparation of synthetic fused silica glass containing a very small amount of hydroxyl groups and has a high viscosity at high temperatures suitable for use as a material of articles for semiconductor processing at high temperatures, such as a crucible for Czochralski single crystal growing of semiconductor silicon. The method comprises hydrolyzing methyl silicate in a medium containing a specified amount of ammonia as a hydrolysis catalyst to form silica particles which are heat-treated in several successive steps.
    Type: Grant
    Filed: September 8, 1989
    Date of Patent: December 25, 1990
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masatoshi Takita, Takaaki Shimizu
  • Patent number: 4978378
    Abstract: A glass preform for use in the fabrication of an optical fiber having little bubbles is produced by a method comprising depositing glass soot on a periphery of a starting glass rod to form a porous glass preform, heating and sintering the porous glass preform in a helium atmosphere to consolidate the porous glass preform and then heating the sintered glass in an atmosphere containing an inert gas except helium having partial pressure of the inert gas of not lower than 0.8 atm. to obtain a transparent glass preform.
    Type: Grant
    Filed: June 28, 1989
    Date of Patent: December 18, 1990
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Masumi Ito, Hiroshi Yokota, Toshio Danzuka, Masahiro Takagi
  • Patent number: 4978403
    Abstract: A tire repair method includes assembling a harness having straps, a first (or outside) air bag and a first (or outside) heating pad, placing a tire having an area in need of repair so that the repair site is over the heating pad and the tires axis of rotation is parallel to the harness straps, then inserting a second (or inside) heating pad and a second (or inside) air bag on the inside of the tire, and finally putting in place a pair of complementary mandrel halves of the same size. These mandrel halves when in place overlie the repair area of the tire and the other items of equipment. Each mandrel half includes a top surface (which is placed in proximity with a tire bead), a convex outside surface which generally has the same contour as that of the inside of the tire sidewall, a flat inside surface, a bottom surface which is preferably convex, and two ends.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: December 18, 1990
    Assignee: Myers Industry
    Inventor: Larry R. Kinyon
  • Patent number: 4975103
    Abstract: A process is provided for producing a planar glass substrate coated with a dielectric layer system in which the individual layers are formed by a chemical vapor deposition coating process. After the layers have been applied, the glass substrate is either drawn, compressed, or its surface enlarged until the coating layers are reduced in thickness. A planar glass substrate having a multiplicity of extremely thin dielectric layers can be fabricated according to this process.
    Type: Grant
    Filed: September 7, 1989
    Date of Patent: December 4, 1990
    Assignee: Schott Glaswerke
    Inventors: Ulrich Ackermann, Heinz-Werner Etzkorn, Ralf T. Kersten, Volker Paquet, Uwe Ruetze
  • Patent number: 4964945
    Abstract: A method of providing patterned, thin-film materials on flexible substrates by depositing a first, etchable, integral mask onto a substrate, depositing a second pattern material over the mask region and then removing the mask, such as by etching. Patterned films useful as printed circuits and the like can be prepared by this method. In an alternate embodiment, patterned particles can be prepared for dispersion in a vehicle or matrix using the described process.
    Type: Grant
    Filed: December 9, 1988
    Date of Patent: October 23, 1990
    Assignee: Minnesota Mining and Manufacturing Company
    Inventor: Clyde D. Calhoun
  • Patent number: 4961812
    Abstract: An apparatus and a method to inhibit sputtering of undesirable material onto a dielectric layer of an integrated circuit being etched. After exposing the integrated circuit within its package, the leads of the integrated circuit are electrically coupled together by a metallic foil. The metallic foil is wrapped about the package to also provide thermal coupling, however, the integrated circuit is left exposed. Then, the integrated circuit is placed onto an etch-resilient plate disposed atop a cathode electrode. An opening in the plate allows direct placement of the integrated circuit onto the cathode. An etch-resilient cover is placed above the plate opening and the integrated circuit, but the cover has an opening to expose the integrated circuit. During etching, the cover inhibits sputtering from the leads, preform and bond wires.
    Type: Grant
    Filed: September 13, 1988
    Date of Patent: October 9, 1990
    Assignee: Intel Corporation
    Inventors: William Baerg, Valluri R. M. Rao
  • Patent number: 4960540
    Abstract: The present invention involves new anti-foam compositions which control foaming in aqueous systems and by nature of their inverse cloud point characterisitics are insoluble and particulate above their inverse cloud point, and soluble below it. This property makes them particulate non-depositing defoamers. As the defoamed aqueous system cools down these novel products become soluble, preventing insoluble material (pitch) from depositing on process equipment and matter being processed. The anitfoam composition is an alkoxylated bis-amide of the following formula: ##STR1## where R.sup.1 is ##STR2## R.sup.2 is --(CH.sub.2).sub.a --; R.sup.3 is alkyl C.sub.12 to C.sub.20 ; ##STR3## x,y,z are each independently integers from 0 to 20; a is an integer from 1 to 5;c is an integer from 0 to 5;R.sup.5 is selected from H, CH.sub.3, C.sub.2 H.sub.5, C.sub.3 H.sub.6.
    Type: Grant
    Filed: August 24, 1989
    Date of Patent: October 2, 1990
    Inventors: Thomas C. Friel, Jr., Anthony J. O'lenick, Jr.
  • Patent number: 4960488
    Abstract: A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses relatively lower pressure, farther electrode spacing and fluorinated gas chemistry for etching throughout the chamber and exhaust system. The local and extended etch steps may be used separately as well as together.
    Type: Grant
    Filed: December 19, 1989
    Date of Patent: October 2, 1990
    Assignee: Applied Materials, Inc.
    Inventors: Kam S. Law, Cissy Leung, Ching C. Tang, Kenneth S. Collins, Mei Chang, Jerry Y. K. Wong, David Nin-Kou Wang
  • Patent number: 4954201
    Abstract: In an apparatus for etching substrates (18) with a luminous discharge in a vacuum, containing a vacuum chamber (13), a substrate holder (17), an electrode (20, 21, 22) and a radiofrequency generator (24) whose output is connected on the one hand to the substrate holder and on the other hand to the electrode (20, 21, 22, 28), the electrode (20) opposite the substrate (17) and at least partially surrounded by a pot-like, grounded shield (23) is provided in the marginal zone with a projection rim (22) which is at the same potential and which spans the space between the electrode and the substrate (18) or substrate holder (17) except for a gap, while on the circumferential bottom margin of the approximately cylindrical projection rim (22) of the diode (20) a diaphragm ring (28) is provided which extends radially inwardly in a plane parallel to the substrate (18).
    Type: Grant
    Filed: November 29, 1988
    Date of Patent: September 4, 1990
    Assignee: Leybold Aktiengesellschaft
    Inventors: Rudolf Latz, Thomas Martens
  • Patent number: 4954214
    Abstract: In methods for making interconnect structures for semiconductor devices a layer of seed material is formed on a first substantially planar dielectric layer which covers the semiconductor devices at predetermined locations where interconnect conductor is desired, a second substantially planar dielectric insulating layer is formed over the first substantially planar dielectric insulating layer and the seed material, the second layer having openings extending therethrough at the predetermined locations to expose at least a portion of the seed material, and conductive material is selectively deposited on the exposed seed material to fill the openings. The seed material may be a material in the group consisting of aluminum alloys, refractory metals and metal silicides, or may be SiO.sub.2 selectively implanted with silicon ions. The insulating material may be SiO.sub.2.
    Type: Grant
    Filed: January 5, 1989
    Date of Patent: September 4, 1990
    Assignee: Northern Telecom Limited
    Inventor: Vu Quoc Ho
  • Patent number: 4950360
    Abstract: Three dimensional molded articles comprising liquid crystalline polyesters are recognized to be extremely difficult to finish such as by printing, painting, metallizing, plating, etc. An effective answer to this difficulty is provided by initially blending within the liquid crystalline polyester at least one particulate inorganic filler selected from the group consisting of Group II elements of the periodic table and oxides, sulfates, phosphates, silicates, and carbonates thereof, and elements of aluminum, silicon, tin, lead, antimony, and bismuth and oxides thereof, in an amount of 5 to 80 percent by weight; forming a molded article from the same; and contacting the resulting molded article with an acidic solution containing at least 80 percent by weight of sulfuric acid. The requisite surface modification for finishing to form a quality product is made possible.
    Type: Grant
    Filed: September 27, 1988
    Date of Patent: August 21, 1990
    Assignee: Polyplastics Co., Ltd.
    Inventors: Toshiro Murao, Yoshiharu Suzuki, Mitsuo Wada, Hiroaki Konuma
  • Patent number: 4927485
    Abstract: A laser end point detector incorporating adjustable-focus, variable-orientation detection optics for monitoring different types of structures such as laser-transparent thin films, isolated trenches or holes and patterned arrays of trenches or holes is disclosed. A collector lens package comprising a laser and a focusing lens are mounted in a hole in a collector lens which is pivotally mounted for selectively focusing zero, first and higher orders of diffractions reflected from the wafer onto an associated detector to monitor the etching of different types of structures. For example, zero order diffraction signals are used to monitor the etching of large target areas in transparent thin films or of non-patterned trenches or holes. First order (or higher) diffraction signals are used for monitoring the etching of patterned features which effect a two-dimensional diffraction grating, such as the capacitor holes in dynamic random access memories.
    Type: Grant
    Filed: July 28, 1988
    Date of Patent: May 22, 1990
    Assignee: Applied Materials, Inc.
    Inventors: David Cheng, Robert P. Hartlage, Wesley W. Zhang