Abstract: A ferro-electric memory device suppresses deterioration of retention characteristics at the time when an ambient temperature has decreased, without requiring a much longer cycle time. The ferro-electric memory device includes a first ferro-electric capacitor for use in a first normal cell and a second ferro-electric capacitor for use in a second normal cell. The ferro-electric memory device also includes: a temperature detection circuit which detects an ambient temperature of the first and second normal cells; and a normal cell power supply switching circuit which switches a voltage to be applied to the first and second ferro-electric capacitors depending on the detected temperature.

Abstract: An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier provides the resistance state signal. A plurality of reference magnetic tunnel junctions are coupled in parallel and to the sense amplifier, each having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier to differ from each resistance state of the MTJ antifuse. A write circuit selectively provides a current sufficient to create the program voltage when the write circuit is enabled to program the antifuse magnetic tunnel junction. Upon detecting a change in resistance in the MTJ antifuse, the write circuit reduces current supplied to the antifuse. Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.

Abstract: A memory module includes a plurality of memory devices and a circuit. Each memory device has a corresponding load. The circuit is electrically coupled to the plurality of memory devices and is configured to be electrically coupled to a memory controller of a computer system. The circuit selectively isolates one or more of the loads of the memory devices from the computer system. The circuit comprises logic which translates between a system memory domain of the computer system and a physical memory domain of the memory module.

Abstract: An SRAM circuit structure and method for reducing leakage currents and/or increasing the speed of the devices. Various forms of SRAM devices may be fabricated utilizing the techniques, such as single port and dual port RAM devices. By way of example the SRAM structure utilizes separate write and read lines, splits the circuit into portions which can benefit from having differing threshold levels, and can allow splitting read path transistors for connection to a first terminal and a virtual node connected to a source transistor. The structure is particularly well suited for forming transistors in a combination of NMOS and PMOS, or solely in NMOS. Memory arrays may be organized according to the invention in a number of different distributed or lumped arrangements with the reference read paths and sense blocks being either shared or dedicated.

Abstract: A memory includes a plurality of memory arrays. Each of the plurality of memory arrays includes a plurality of sub-arrays. A plurality of power supply conductors are provided over the memory for supplying power to the plurality of memory arrays. When accessing the memory to simultaneously read a plurality of bits from the memory, the sub-arrays are accessed so as to provide a relatively uniform current demand on the plurality of power supply conductors. In one embodiment, the accessed sub-arrays are organized so that sides, or edges, of each accessed sub-array are not adjacent to each other.

Abstract: A method for programming a phase change memory cell is discussed. A phase change memory cell includes a memory element of a phase change material having a first state, in which the phase change material is crystalline and has a minimum resistance level, a second state in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states, in which the phase change material includes both crystalline regions and amorphous regions and has intermediate resistance levels. According to the method, a plurality of programming pulses are provided to the phase change memory cell; programming energies respectively associated to the programming pulses are lower than a threshold energy which is required to bring the phase change material to the second state.

Abstract: In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.

Abstract: A display driver having Dynamic Random Access Memory (DRAM) cells and a method of controlling the timing of the display driver are disclosed. The display driver includes memory cells each of which is implemented using a DRAM cell having a single transistor and a single capacitor. The display driver includes a drive control unit generating a scan signal, a refresh signal and a write/read signal, a word line drive unit driving word lines of the memory cells, and a data input/output unit for controlling input/output of data to/from the memory cells. The display driver gives priority to a write/read operation over a refresh operation and a scan operation.

Abstract: A metal sulfide based non-volatile memory device is provided herein. The device is comprised of a substrate, a backplane, a planar memory media including a dense array of metal sulfide based memory cells, and a MEMS probe based actuator. The cells of the memory device are operative to be of two or more states corresponding to various levels of impedance. The MEMS actuator is operable to position micro/nano probes over the appropriate cells to enable reading, writing, and erasing the memory cells by applying a bias voltage.

Abstract: Systems and methods provide non-volatile memory architectures for programmable logic devices. For example, a programmable logic device may include logic blocks, input/output blocks, and configuration memory to store configuration data for configuration of the logic blocks and the input/output blocks. A first non-volatile memory may store user information, besides configuration data, and a first port includes a dedicated serial peripheral interface to provide access to the first non-volatile memory.

Abstract: A semiconductor multi-chip package includes: a first semiconductor memory chip having n address pads, a first control pad, and a first address controller; and a second semiconductor memory chip whose memory density is greater, e.g., at least 1.5 times greater, than the first semiconductor memory chip and which is disposed on the first semiconductor memory chip, and has (n+1) address pads, a second control pad, and a second address controller. The n address pads of the first semiconductor memory chip and the n address pads of the second semiconductor memory chip are respectively connected to corresponding n address pins. The first and second control pads are connected to a control pin. The first and second address controllers are operable in a mutually exclusive manner, e.g., manner of activation, according to a signal applied to the control pin.

Abstract: An embodiment of the present invention is directed to a circuit for indicating the program status of an EPROM. The circuit includes a first and second transistor coupled to a first voltage potential. The circuit further includes a latching circuit coupled to the first and second transistors. The latching circuit outputs a first output value when the current through the first transistor is greater than the current through the second transistor and a second output value when less. The circuit further includes a capacitive element coupled between a gate of the first transistor and a third voltage potential, the capacitance of the capacitive element being such that the output of the latching circuit is always a first digital state prior to programming the EPROM and a second digital state after programming the EPROM.

Abstract: In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of about 3.9 to about 25; and (2) control logic coupled to at least one of the one or more MOSFETs. The control logic is adapted to (a) cause the memory element to operate in a first mode to store data; and (b) cause the memory element to operate in a second mode to change a threshold voltage of at least one of the one or more MOSFETs from an original threshold voltage to a changed threshold voltage such that the changed threshold voltage affects data stored by the memory element when operated in the first mode. Numerous other aspects are provided.

Abstract: An integrated circuit arrangement having at least one electrical conductor which, when a current flows through it, produces a magnetic field which acts on at least a further part of the circuit arrangement. The electrical conductor has a first side oriented towards the at least further part of the circuit arrangement and comprises a main line of conductive material, and, connected to its first side, at least one field shaping strip made of magnetic material. Due to the field shaping strip, the inhomogeneity of the magnetic field profile above the electrical conductor is reduced.

Abstract: A method for data storage includes accepting data for storage in a memory (28) that includes multiple analog memory cells (32). The data is converted to input values. The input values are filtered using a non-linear filtering operation to produce respective shaped values, and the shaped values are converted to output values using a linear spreading transformation with coefficients chosen so that each of the shaped values contributes to at least two of the output values. The non-linear filtering operation is selected so as to reduce a size of an output range in which the output values lie. The output values are stored in the respective analog memory cells.

Abstract: A lock-out device is provided that determines whether to lock out a chip or not according to the result of operation voltage drop detected at a plurality of positions in a semiconductor integrated circuit device. As a result, unnecessary lock-out operations can be prevented and a program operation or an erase operation in a semiconductor memory device can be executed stably.

Abstract: A random access memory including an array of memory cells configured to store memory cell data, a first circuit, and a second circuit. The first circuit is configured to compare test data and memory cell data to obtain comparison results. The second circuit is configured to compress the comparison results and store the compressed comparison results.

Abstract: A semiconductor memory device includes an amplifying unit for amplifying a voltage difference between a bit line pair; a power supply driver for supplying a power to the amplifying unit in response to a second driving signal; a control unit for generating a first driving signal of the power supply driver in response to an amplifying unit enable signal; a selection signal generation unit for generating a plurality of selection signals for determining a turning-on transition speed of the power supply driver; and a power supply driver driving unit for generating the second driving signal according to the first driving signal and the plurality of selection signals.

Abstract: An internal voltage generator according to the present invention stably supplies an internal voltage regardless a level of power voltage input from a source external to a semiconductor memory device. The present invention includes a dead zone controller to generate a reference voltage, a high reference voltage and a low reference voltage based on an inputted power voltage; and an internal power generator to generate an internal power based on the reference voltage by comparing the internal power with the high reference voltage and the low reference voltage.

Abstract: A router including a lookup execution unit including a plurality of stages, a forwarding table memory arranged in hierarchy including addressable sectors, blocks, and entries, and a crossbar having an address crossbar for selectively coupling one of the plurality of stages to a sector of the memory so that data from the sector can be read. In one example, any one of the stages of the plurality of stages may be selectively and dynamically coupled with any one of the sectors of the forwarding table memory for providing an address to a particular sector of the memory to read data therefrom.