Abstract: An anodized coating suitable for formation of highly regulated pores is provided. A method for production of a structure having pores characterized by including the steps of: forming starting points at predetermined intervals in an aluminum alloy formed on a substrate, and forming pores by anodization with the starting points as origins. In another embodiment, first and second aluminum alloy layers are anodized to form pores penetrating into the layers, wherein a diameter of a pore in the first alloy is different from a diameter of a pore in the second alloy. In an additional embodiment, a substrate is anodized to form pores, wherein the substrate contains an additive which changes the diameter within each pore, the amount of the additive continuously changing along the direction perpendicular to the substrate.

Abstract: Using aqueous electrolytes containing complex fluorides or oxyfluorides such as fluorozirconates and fluorotitanates, ferrous metal articles and non-metallic articles having a first coating containing aluminum may be rapidly anodized to form a second protective surface coating. White coatings may be formed on articles using pulsed direct current or alternating current.

Abstract: A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.

Abstract: A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.

Abstract: An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

Abstract: A method for manufacturing a heat resistant resin film with a metal thin film is configured to include the steps of: biasing a conductive material to one surface of the heat resistant resin film; and applying electrolytic plating to the heat resistant resin film while using the conductive material biased to the one surface of the heat resistant resin film as an electrode, so as to form a metal thin film on the heat resistant resin film.

Abstract: The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specifically, the present invention utilizes the correlation between double layer capacitance and the organic additive concentration for concentration mapping, based on the double layer capacitance measured for the sample electrolytic solution.

Abstract: Bipolar wave current, with both positive and negative current portions, is used to electrodeposit a nanocrystalline grain size deposit. Polarity Ratio is the ratio of the absolute value of the time integrated amplitude of negative polarity current and positive polarity current. Grain size can be precisely controlled in alloys of two or more chemical components, at least one of which is a metal, and at least one of which is most electro-active. Typically, although not always, the amount of the more electro-active material is preferentially lessened in the deposit during times of negative current. The deposit also exhibits superior macroscopic quality, being relatively crack and void free.

Abstract: Provided are electron-emitting devices improved in durability during concentration of an electric field and thus rarely suffering chain discharge breakdown. An electron-emitting device has an electroconductive film, a layer placed on the electroconductive film and containing aluminum oxide as a main component, a pore placed in the layer containing aluminum oxide as a main component, and an electron emitter placed in the pore and containing a material of the electroconductive film, and the electron emitter is porous and is electrically connected to the electroconductive film.

Abstract: A method for manufacturing a ferroelectric film includes the steps of causing, in a solution containing sol-gel raw materials, hydrolysis and polycondensation to the sol-gel raw materials to form a liquid containing particulate gels dispersed therein, and forming a ferroelectric film by a migration electrodeposition method, using the liquid containing particulate gels, through electrodepositing the particulate gels on an electrode.

Abstract: A gold plating solution comprising iodide ions, gold iodide complex ions and a non-aqueous solvent, which is less toxic and stable, while having a performance comparable to a cyanide type gold plating solution. The present invention further provides a gold plating solution comprising iodide ions, gold iodide complex ions, a non-aqueous solvent and a water-soluble polymer, which is less toxic and stable, while having a performance comparable to a cyanide type gold plating solution and which is capable of forming a gold plating film in which gold crystal particle sizes are very fine and grain boundaries are dense. The present invention further provides a gold plating method employing such a gold plating solution.

Abstract: The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similarly high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel/non-magnetic metal layers.

Abstract: This invention relates to a method of anodising magnesium material which includes anodising the magnesium while it is immersed in an aqueous electrolyte solution having a pH above 7, and in the presence of a phosphate, the electrolyte solution also containing a sequestering agent. The method may further include the provision of a plasma suppressing substance within the electrolyte solution. Furthermore, the electrolyte solution may also preferably include a tertiary amine such a TEA, and the current passed through the electrolyte solution may preferably be a straight DC current.

Abstract: A soft magnetic film is formed of a CoFe alloy having an Fe content in the range of 68 to 80 mass %, thereby having a saturation magnetic flux density of 2.0 T or more. The center lain average roughness of the film surface is 9 nm or less. The soft magnetic film can achieve a corrosive resistant magnetic head with a high recording density.

Abstract: Electrolytic solutions containing organic additive(s) selected from a described class of additives (e.g., 4,6-dihydroxypyrimidine) reduce overall applied electrical potential of electrolytic cells and/or reduce gas formation at the anode(s) or increase copper production rate. Benefits include reducing overall power consumption and reducing acid mist during electrolytic processes.

Abstract: An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.

Abstract: A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage. In one embodiment, the voltage of a plating cell including a reference wafer which has substantially complete Cu seed coverage is measured. A reference resistance of the plating cell with the reference wafer is determined. The voltage of the plating cell including a calibration wafer which has no or insufficient seed coverage at its edge is measured. A calibration resistance of the plating cell with the calibration wafer is determined. An error trigger based on a comparison of the reference resistance with the calibration resistance is selected.

Abstract: An embodiment of the invention provides a method for reducing within die thickness variations by modifying the concentration of components of a low-acid electroplating solution. For one embodiment, the leveler concentration is increased sufficiently to reduce within die thickness variations to a specified value. For one embodiment of the invention, the leveler and suppressor are increased to reduce within die thickness variations and substantially reduce a plurality of electroplating defects. In such an embodiment the combined concentration of leveler and suppressor is determined to maintain adequate gap fill.

Abstract: The invention concerns a metal material with a surface which is modified by bonding an aromatic group, optionally substituted by a functional group, on the surface. In one embodiment, an aromatic group is attached to the surface by electrochemical reduction of a diazonium salt containing the aromatic group. The metal material is brought into contact with a solution of the diazonium salt in a solvent and negatively polarized relative to an anode that is also in contact with the solution. A carbon-metal bond of the covalent type is formed.

Abstract: A solid substrate comprising a surface comprising an achiral array of atoms having thereupon a chiral metal oxide surface. The chiral metal oxide surface is prepared by electrodeposition of a chiral metal oxide array from a solution of a chiral salt of the metal. In one embodiment, chiral CuO is grown on achiral Au(001) by epitaxial electrodeposition. The handedness of the film is determined by the specific enantiomer of tartrate ion in the deposition solution. (R,R)-tartrate produces an S—CuO(1 1 1) film, while (S,S)-tartrate produces an R—CuO( 11 1) film. These chiral CuO films are enantiospecific for the electrochemical oxidation of(R,R) and (S,S)-tartrate.