Abstract: A method for manufacturing a light-emitting element includes a) forming an intermediate layer containing a first resin on a charge transport layer, b) forming a light-emitting layer containing a second resin, a second photosensitive material, and a first luminescent material on the intermediate layer, c) exposing the intermediate layer and the light-emitting layer in a predetermined pattern to obtain an exposed intermediate layer and an exposed light-emitting layer, respectively, and d) developing the exposed intermediate layer and the exposed light-emitting layer with a developing solution. A solubility of a second portion of the exposed intermediate layer dissolved in the developing solution and a solubility of a first portion of the exposed light-emitting layer dissolved in the developing solution are different from each other.

Abstract: IC structures with nanoribbon stacks without dielectric protection caps for top nanoribbons, and associated methods and devices, are disclosed. An example IC structure includes a stack of nanoribbons, an opening over the top nanoribbon of the stack of nanoribbons, and a gate electrode material in the opening, where the opening has a first portion, a second portion, and a third portion, the second portion is between the first portion and the third portion, and where a width of a portion of the gate electrode material in the second portion is smaller than a width of a portion of the gate electrode material in the first portion. In such an IC structure, a gate insulator on the sidewalls of the first portion of the opening is materially discontinuous from a gate insulator on the sidewalls of the third portion of the opening.

Abstract: Provided is a display substrate. The display substrate includes a base substrate, a wiring, and a first insulation layer. The first insulation layer covers the wiring. The wiring includes a first sub-layer and a second sub-layer. The first sub-layer is disposed on the base substrate, wherein a side wall of the first sub-layer is a first inclined surface. The second sub-layer is disposed on the base substrate and covers the first sub-layer, and the second sub-layer includes a first portion stacked on the first inclined surface, wherein a side wall of the first portion is a second inclined surface. An included angle between the second inclined surface and a bearing surface of the base substrate is less than an included angle between the first inclined surface and the bearing surface of the base substrate.

Abstract: An insulated-gate bipolar transistor device is provided including: a first region doped with a first type of charge carriers; a second region doped with a second type of charge carriers different from the first type; a third region doped with the first type; a fourth region doped with the second type; a first, emitter terminal electrically connected with the first region and a second, collector terminal electrically connected with the third region and the fourth region; and a gate structure disposed on the third region with one end adjacent to the second region and with another end adjacent the fourth region; as well as a diode structure having a first diode structure terminal electrically connected with the collector terminal and a second diode structure terminal electrically connected with the gate terminal of the gate structure; and the diode structure is a paired with a antiparallel diode.

Abstract: Embodiments of a display device include a plurality of light emitting portions including a plurality of light emitting elements; and a sensing portion including a photoelectric conversion device, wherein the photoelectric conversion device includes a first electrode, common electrode facing the first electrode, and a hole injection layer, hole transport layer, resonance layer, and an active layer stacked between the first electrode and the common electrode, and wherein the light emitting elements include, a pixel electrode, the common electrode facing the pixel electrode, and the hole injection layer, hole transport layer, resonance layer, and a light emitting layer stacked between the pixel electrode and the common electrode, wherein a thickness of each of the resonance layers of light emitting elements are different from each other, and a thickness of the resonance layer of a light emitting element is the same as a thickness of the resonance layer.

Abstract: A structure including a semiconductor-on-insulator (SOI) substrate including a semiconductor-on-insulator (SOI) layer over a buried insulator layer over a base semiconductor layer. The structure further includes a first field effect transistor (FET) adjacent to a second FET, the first FET having a gate electrode on the buried insulator layer and a source and a drain in the base semiconductor layer under the buried insulator layer. The second FET has a source and a drain over the buried insulator layer. The structure further includes a trench isolation in each of the source and the drain of the first FET, the source of the first FET surrounding the trench isolation therein and the drain of the first FET surrounding the trench isolation therein.

Abstract: A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.

Abstract: A display panel and a display device are provided. The display panel includes a TFT layer, an auxiliary electrode, a protection layer having a first opening, a connection layer positioned above the protection layer, a first electrode positioned above the connection layer, and a second electrode positioned above the connection layer. The first electrode is positioned above the connection layer and electrically connected to the TFT through the first opening. The second electrode is electrically connected to the auxiliary electrode through a via.

Abstract: The present disclosure relates to an electroluminescence display. An electroluminescence display according to the present disclosure comprises: a pixel disposed on a substrate; a low resistance line disposed as one side of the pixel; a passivation layer on the low resistance line covering whole of the substrate; a planarization layer on the passivation layer covering whole of the substrate; a cathode contact hole exposing some of the low resistance line; an anode electrode disposed on the planarization layer; an under-cut trench formed at the planarization layer disposed between the anode electrode and the cathode contact hole; a bank covering circumference area of the anode electrode; an emission layer on the bank, the anode electrode and the planarization layer and a cathode electrode on the emission layer, wherein the cathode electrode connects the low resistance line through the cathode contact hole.

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

Abstract: The present disclosure relates to display panels and display devices including the display panels, and for example, to a display panel with excellent luminance and a display device including the display panel. In one aspect, the display panel may include an insulating film having an inclined portion with a high-inclined portion. In another aspect, the display panel may include a plurality of touch electrodes on the encapsulation layer having an open area. In a plan view, at least two of the open areas respectively include at least two light emitting areas, and a size of the at least two light emitting areas of a first sub-pixel is different from a size of the at least two light emitting areas of a second sub-pixel.

Abstract: An electronic device and a variable frequency control system using the electronic device. The electronic device may comprise: a shielding layer, which is inserted between a current outflow terminal of a switching device and a grounding conductor; and a conductive elastomer, which is used for connecting the current outflow terminal to the shielding layer.

Abstract: Disclosure provides a display substrate, a display panel and a display device. The display substrate includes a substrate, a drive circuit layer and a light emitting device layer sequentially on the substrate, a display region of the substrate includes first and second display regions on a side of the first display region, light transmittance of the first display region is larger than that of the second display region; the drive circuit layer includes first pixel circuits in bezel region around the display region, second pixel circuits in the second display region; the light emitting device layer includes first light emitting devices, second light emitting devices; each first light emitting device is electrically connected with each first pixel circuit; each second light emitting device is electrically connected with each second pixel circuits; a density of the first light emitting devices is same as a density of the second light emitting devices.

Abstract: Provided is a display panel. The display panel includes: a cutout region, a display region disposed on a periphery of the cutout region, and a winding region disposed between the cutout region and the display region. The display panel further includes: a substrate; a plurality of light-emitting devices disposed on the substrate, and a package layer and a light-shielding layer that are successively stacked and disposed on a side, distal from the substrate, of the plurality of light-emitting devices. The plurality of light-emitting devices are within the display region. The package layer is closer to the substrate relative to the light-shielding layer, and at least a portion of the light-shielding layer is within the winding region.

Abstract: A display device includes a substrate, an insulating film formed over the substrate, a first pixel electrode formed over the insulating film, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode in a plan view, a second light-emitting layer formed in a recess provided in the insulating film, and a second pixel electrode overlapping the recess in a plan view. At least one of the first light-emitting layer and the second light-emitting layer includes a quantum dot as a light-emitting material.

Abstract: A semiconductor device includes a first electrode, a second electrode, and a semiconductor layer in contact with the first electrode and the second electrode. The semiconductor layer includes a first oxide layer of 5 to 20 nm containing spinel-type ZnGa2O4, and a second oxide layer of 5 to 50 nm containing In, Ga, and Zn.

Abstract: A display device can include a substrate including an active area in which a plurality of pixels are disposed, and a non-active area extending from the active area and including a pad area; a plurality of pads disposed in the pad area; a plurality of link lines disposed in the non-active area and connected to the plurality of pads; and a driver integrated circuit (IC) bonded to the plurality of pads. The display device can further include a passivation layer disposed on portions of the plurality of pads disposed in the pad area, in which outer edges of each of the plurality of pads are covered by the passivation layer.

Abstract: A display device and a method for manufacturing the display device are provided. The display device includes: a driving circuit board provided with a plurality of first connection electrodes on a side thereof; a display module on a side of the driving circuit board, the display module including a flexible substrate, a plurality of signal lines on a side, away from the driving circuit board, of the flexible substrate and a plurality of bottom electrodes on a side, facing the driving circuit board, of the flexible substrate; the flexible substrate being provided with a plurality of first via holes in a display area of the display module, the signal lines are electrically connected with the bottom electrodes through the first via holes, and the bottom electrodes are electrically connected with the first connection electrodes.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Abstract: A display device has a display area in which there is provided a plurality of pixels and a frame area surrounding the display area. The display device includes, in the display area; a substrate; a thin film transistor layer; a light-emitting element layer including a plurality of light-emitting elements configured to emit light of mutually different colors; and a sealing layer in this order. The plurality of light-emitting elements include a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, and an anode in this order from a substrate side. The electron transport layer includes oxide nanoparticles and a binder resin. On an electron transport layer side of the cathode, there is provided an undercoat layer in contact with the electron transport layer.