Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

Abstract: In an assembly between a MEMS and/or NEMS electromechanical component and a casing, the electromechanical component includes at least one suspended and movable structure which is provided with at least one fixing zone, on which a region for receiving the casing is fixed, the suspended structure being at least partially formed in a cover for protecting the component or in a layer which is different from the one in which a sensitive element of the component is formed.

Abstract: A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method comprises forming a MEMS layer, wherein the forming comprises fusion bonding a handle layer with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

Abstract: A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

Abstract: Processing raw data stored in an historian device for determining an amount of products passed through a process element in a process control environment is described. A count value is incremented by a counter at a rate at which products pass through the process element. The count value rolls over to zero when the count value reaches a rollover value R. An historian device periodically receives count value data points from the counter. A deadband value D is set in the historian device for distinguishing between rollovers, resets, and reversals. A client device queries the historian device for an amount of products passed through the process element for a timeframe. The historian device selects a set of count value data points from within the queried timeframe. The historian device determines, based on the selected data points and their quality, an amount of products passed through the process element.

Abstract: The present disclosure relates to a semiconductor package, which includes a carrier, a flip-chip die, a mold compound, and a heat spreader. Herein, the flip-chip die includes a device layer over the carrier and a die substrate over the device layer. The mold compound resides over the carrier and surrounds the flip-chip die. The mold compound has a recess adjacent to the flip-chip die, and the recess extends vertically lower than a top surface of the die substrate. The heat spreader hangs over the flip-chip die, and includes a spreader body that is thermally coupled to the die substrate, and a spreader protrusion that extends from the spreader body into the recess. A thickness of the spreader protrusion is shorter than a depth of the recess, and a width of the spreader protrusion is narrower than a width of the recess, such that the spreader protrusion is floating in the recess.

Abstract: An organic light-emitting display apparatus prevents the quality of an image being displayed thereon from being deteriorated as a result of contamination of an organic emission layer. The display apparatus includes a substrate with a display area and a periphery area. A first insulating layer, disposed over the substrate, has a first opening in the periphery area. A first electrode is disposed within the display area, over the first insulating layer. A first bank is disposed over the first insulating layer and has a second opening through which a center of the first electrode is exposed. A second bank is disposed over the first insulating layer and is separated from the first bank. The first opening is disposed between the first bank and the second bank. An intermediate layer is disposed over the first electrode. A second electrode is disposed over the intermediate layer and the first bank.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A micromechanical device that includes a substrate, a functional layer, and a cap that are situated one above the other in parallel to a main plane of extension. A cavity that is surrounded by a bond frame that extends in parallel to the main plane of extension is formed in the functional layer, the cap being connected to the bond frame. The cavity is situated partially between the bond frame and the substrate in a direction perpendicular to the main plane of extension. A method for manufacturing a micromechanical device is also provided.

Abstract: According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.

Abstract: In an example, a method includes providing a photovoltaic string comprising a plurality of from 2 to 45 strips, each of the plurality of strips being configured in a series arrangement with each other, each of the plurality of strips being coupled to another one of the plurality of strips using an electrically conductive adhesive (ECA) material, detecting at least one defective strip in the photovoltaic string, applying thermal energy to the ECA material to release the ECA material from a pair of photovoltaic strips to remove the defective photovoltaic strip, removing any residual ECA material from one or more good photovoltaic strip, aligning the photovoltaic string without the damaged photovoltaic strip, and a replacement photovoltaic strip that replaces the defective photovoltaic strip, and curing a reapplied ECA material on the replacement photovoltaic strip to provide the photovoltaic string with the replacement photovoltaic strip.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, for solving the problem that a viscous force is likely to be generated when a smooth surface of the silicon wafer approaches another film layer. The method includes: depositing a porous oxide film layer on a surface of the first silicon planar layer that has been subjected to planar planarization, and then etching the porous oxide film layer by XeF2 vapor etching, during which XeF2 gas passes through the porous oxide film layer to etch the first silicon planar layer in an irregular way. Therefore, the first silicon planar layer has a greater surface roughness. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, improving the sensitivity of the MEMS device and reducing the probability of out-of-work MEMS devices.

Abstract: Some embodiments relate to a ferroelectric random access memory (FeRAM) device. The FeRAM device includes a bottom electrode structure and a top electrode overlying the ferroelectric structure. The top electrode has a first width as measured between outermost sidewalls of the top electrode. A ferroelectric structure separates the bottom electrode structure from the top electrode. The ferroelectric structure has a second width as measured between outermost sidewalls of the ferroelectric structure. The second width is greater than the first width such that the ferroelectric structure includes a ledge that reflects a difference between the first width and the second width. A dielectric sidewall spacer structure is disposed on the ledge and covers the outermost sidewalls of the top electrode.

Abstract: A wireless sensor for detection or measurement of at least one specific component present in a gaseous or liquid mixture, the gas sensor including at least one sensor cell, having a high-electron-mobility transistor having a source and a drain with a gate intercalated between source and drain. The at least one sensor cell having a high-electron-mobility transistor is associated with at least one split-ring resonator with at least one respective slit and connected between, on the one hand, the drain and on the other hand, the gate or the source of the at least one sensor cell, the sensor detecting a change in the intensity or the frequency of resonance as a function of the presence and/or of the concentration of the at least one specific component in the gaseous or liquid mixture.

Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

Abstract: A method includes obtaining an active device layer. The active device layer has a first surface with one or more active feature areas. First portions of the active feature areas are exposed, and second portions of the active feature areas are covered by an insulating layer. A conformal overcoat layer is formed on the first surface. A base of a microelectromechanical systems (MEMS) device layer is formed on the conformal overcoat layer. The MEMS device layer is spatially segregated from the active feature areas by removing portions of the base of the MEMS device layer in one or more antiparasitic regions (APRs) that correspond to the active feature areas. Metal MEMS features are formed on the base of the MEMS device layer. Selected portions of the active feature areas are exposed removing portions of the conformal overcoat layer that overlay the active feature areas.

Abstract: A method of transferring a two-dimensional material such as graphene onto a target substrate for use in the fabrication of micro- and nano-electromechanical systems (MEMS and NEMS). The method includes providing the two-dimensional material in a first lower state of strain; and applying the two-dimensional material onto the target substrate whilst the two-dimensional material is under a second higher state of strain. A device comprising a strained two-dimensional material suspended over a cavity.