Patents Examined by Yuanda Zhang
  • Patent number: 10361539
    Abstract: Vertical-cavity surface-emitting laser (VCSEL) structures are described which enable their use as widely wavelength-swept coherent light sources and multiple-wavelength VCSEL arrays. Three general configurations are described: (a) a semiconductor-cavity-dominant (SCD) with high reflection at the semiconductor-air interface, (b) an extended-cavity (EC) design in which reflections at the semiconductor-air interface is reduced to insignificance compared to the SCD design with a refractive index-matched layer (i.e., AR layer) so the entire structure resonates as one cavity, and (c) an air-cavity-dominant (ACD) design which facilitates a larger field confinement in the air gap, and the increased field confinement causes the air gap to be the dominant cavity.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: July 23, 2019
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Connie Chang-Hasnain, Pengfei Qiao, Kevin Taylor Cook
  • Patent number: 10361535
    Abstract: The semiconductor laser driving circuit that controls an overshoot on modulation includes a semiconductor laser, of which anode is connected to a power source, that emits the laser light that is modulated by an external modulation input signal, an impedance element connected to a cathode of the laser device, an impedance element connected to the anode, and a collector of a transistor Q1, connected to the impedance element; a collector of a transistor Q2, connected to the other end of the impedance element, a differential pair circuit to which emitters of Q1, Q2 are connected; an electric current source iMOD connected to the emitters of Q1, Q2; and a differential driver that generates a differential voltage (vb1?vb2) that controls Q1, Q2 by driving Q1 by the external modulation input signal, wherein the differential driver controls the differential voltage so that the amplitude of the overshoot of the electric current, which flows in the laser when the output of the laser is at a high-level.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: July 23, 2019
    Assignee: SHIMADZU CORPORATION
    Inventors: Ichiro Fukushi, Akiyuki Kadoya, Kazuma Watanabe
  • Patent number: 10355448
    Abstract: The invention relates to a tunable laser source, and the reduction in the loss and the size can both be achieved in a tunable laser source having a power monitor and a wavelength locker function. A tunable laser is formed of a semiconductor optical amplifier and a resonator, and one of the two output light beams split from part of the light within the tunable laser by a 2×2 type optical splitter is incident into a light intensity monitor, and the other is incident into a wavelength locker.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: July 16, 2019
    Assignee: FUJITSU OPTICAL COMPONENTS LIMITED
    Inventor: Masaki Sugiyama
  • Patent number: 10333269
    Abstract: A laser system includes a master oscillator, which emits a train of optical seed pulses with variable intervals between the pulses. An optical power amplifier includes an optical gain medium, which receives and amplifies the optical seed pulses from the master oscillator, and a pump, which applies pump radiation to the optical gain medium. A pulse generator applies a control input to the master oscillator, which causes the intervals between the optical seed pulses to vary by at least 50% at a rate of change that is greater than a response frequency of the optical gain medium. A control unit drives the pump responsively to predicted intervals between the optical seed pulses, at a variable pump power selected so that the pulse amplitudes of the output pulses vary by no more than 20% irrespective of the varying intervals between the optical seed pulses.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 25, 2019
    Assignee: APPLE INC.
    Inventors: Ido Luft, Andrew J. Sutton, Ronen Akerman
  • Patent number: 10326254
    Abstract: A laser activated remote phosphor system may include a radiation source configured to emit excitation radiation and a conversion element which has a phosphor and is able to be irradiated by the excitation radiation. An input coupling surface of the conversion element has a delimitation line beyond which a central excitation spot of the excitation radiation radiates at least in sections.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: June 18, 2019
    Assignee: OSRAM GMBH
    Inventor: Joerg Sorg
  • Patent number: 10326255
    Abstract: A laser device includes a light-emitting unit that generates a laser beam, an amplification unit that amplifies the laser beam generated by the light-emitting unit, a power supply unit that supplies power for generating the laser beam to the light-emitting unit, a plate-like cooling unit including a first cooling surface and a second cooling surface positioned opposite to the first cooling surface, and a housing in which the light-emitting unit, the amplification unit, the power supply unit, and the cooling unit are housed. The power supply unit and the light-emitting unit are arranged adjacent to the first cooling surface of the cooling unit. The amplification unit is arranged adjacent to the second cooling surface of the cooling unit.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: June 18, 2019
    Assignee: FANUC CORPORATION
    Inventors: Masahiro Honda, Munekazu Matsuda
  • Patent number: 10320150
    Abstract: An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: June 11, 2019
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Toshihito Suzuki, Kazuaki Kiyota, Tatsuro Kurobe
  • Patent number: 10320144
    Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane and a second main surface of a {110} plane that are parallel to each other, forming mask patterns on the first main surface and the second main surface, each of the mask patterns having an opening extending in one direction, so that the opening on a first main surface side and the opening on a second main surface side are disposed alternately, or so that the opening on the second main surface side are disposed directly under the opening on the first main surface side, forming recesses having sloped surfaces in the first main surface side and the second main surface side by wet etching the silicon substrate using the mask patterns as masks, and forming a reflective film on the first main surface or the second main surface.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: June 11, 2019
    Assignee: NICHI CORPORATION
    Inventor: Shingo Tanisaka
  • Patent number: 10320145
    Abstract: In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: June 11, 2019
    Assignee: TERADIODE, INC.
    Inventors: Parviz Tayebati, Michael Deutsch
  • Patent number: 10305252
    Abstract: A power control method for a laser system comprising laser diodes arranged in diode banks is provided. Each diode bank comprises at least one of the laser diodes and has a maximum power. The method comprises operating a first diode bank of the diode banks to output a first power; and concurrently operating other of the diode banks to output other powers, at least one of the other powers being different than the first power.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: May 28, 2019
    Assignees: Lumentum Operations LLC, AMADA HOLDINGS COMPANY LTD.
    Inventors: Martin H. Muendel, Justin L. Franke, Joseph J. Alonis, Kaori Usuda, Minoru Ogata
  • Patent number: 10297978
    Abstract: A semiconductor optical device 1 includes an active layer 4 provided on a substrate 2, a clad layer 5 provided on the active layer 4, and a contact layer 7 provided on the clad layer 5. The contact layer 7 contains a first impurity and a second impurity different from the first impurity. A semiconductor light source includes the active layer 4 provided on the substrate 2, the clad layer 5 provided on the active layer 4, and the contact layer 7 provided on the clad layer 5. The contact layer 7 contains the first impurity and the second impurity different from the first impurity.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: May 21, 2019
    Assignee: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
    Inventors: Atsushi Matsumoto, Kouichi Akahane, Naokatsu Yamamoto
  • Patent number: 10288870
    Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: May 14, 2019
    Assignee: INPHENIX, INC
    Inventors: Mohammad Kamal, Tongning Li, David Eu, Qinian Qi
  • Patent number: 10283931
    Abstract: An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: May 7, 2019
    Assignee: International Business Machines Corporation
    Inventors: Charles Caër, Herwig Hahn
  • Patent number: 10277005
    Abstract: An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: April 30, 2019
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Jorg Jeschke, Thomas Wunderer, Mark Teepe
  • Patent number: 10270217
    Abstract: A driver system with emphasis or de-emphasis control of optic signal generator comprising an input configured to receive an input signal that is to be transmitted as an optic signal. Also part of this system is a rising edge delay creating a first delay signal relative to the input signal and a falling edge delay creating a second delay signal relative to the input signal. A multiplexer receives the first delay signal and the second delay signal and selectively outputs either the first delay signal and the second delay signal to an amplifier. A first amplifier amplifies the input signal to create an amplified input and a second amplifier amplifies the multiplexer output signal to create a de-emphasis signal. A summing junction subtracts the de-emphasis signal from the amplified input to create a driver output signal. The rising and falling edge delays may each comprise two more delays.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: April 23, 2019
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventor: Matteo Troiani
  • Patent number: 10263382
    Abstract: A device comprising a master clock configured to produce a pulse sequence having a wideband light signal of approximately 800 nanometers or red visible wavelength of a predetermined amplitude. The device comprises X laser amplifiers along a common optical path each amplifier being triggered by a burst of X pulses with high-peak power and high-average power. The X laser amplifiers receive the pulse sequence of the master clock and sequentially amplifying the pulse sequence wherein a last laser amplifier of the X laser amplifiers produces an amplified pulse sequence. A compressor is configured to compress the amplified pulse sequence to produce a laser signal having a sequence of directed energy (DE) pulses each DE pulse having a pulse width in a femtosecond range to induce when striking a solid surface of a target object transient electric fields in a microwave frequency range. A system and method are also provided.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: April 16, 2019
    Assignee: LOCKHEED MARTIN CORPORATION
    Inventors: Gary P. Perryman, James R. Wood
  • Patent number: 10263391
    Abstract: An optoelectronic device includes a semiconductor substrate and a vertical-cavity surface-emitting laser (VCSEL) light source formed on the substrate and configured to emit coherent light at a predefined wavelength along a beam axis perpendicular to a surface of the substrate. A block of a transparent material is mounted on the surface of the substrate and forms, with the VCSEL, a resonant cavity at the predefined wavelength having an entrance face that is aligned with the beam axis and an exit face that is laterally displaced with respect to the entrance face along a cavity axis running parallel to the surface of the substrate.
    Type: Grant
    Filed: December 24, 2017
    Date of Patent: April 16, 2019
    Assignee: APPLE INC.
    Inventors: Alexander Shpunt, Andrew J. Sutton, Yakov G. Soskind
  • Patent number: 10263385
    Abstract: An apparatus and method for calculating the frequency of the light.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: April 16, 2019
    Assignee: Acacia Communications, Inc.
    Inventors: Long Chen, Christopher Doerr
  • Patent number: 10256604
    Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: April 9, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, Centre National de la Recherche Scientifique, Universite Paris Diderot
    Inventors: Guillaume Crosnier, Fabrice Raineri, Rama Raj, Paul Monnier
  • Patent number: 10256603
    Abstract: An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: April 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Charles Caër, Herwig Hahn