Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: A system includes a laser diode adapted to output an optical signal having a wavelength; an interferometer adapted to receive a portion of the optical signal from the laser diode; and a controller comprising a processor and coupled to the laser diode and the interferometer.

Abstract: Provided are a new vertical cavity surface emitting laser structure and a manufacturing method thereof. The structure includes a substrate layer, a lower N-type DBR, an active region, an upper N-type DBR and a mixed dielectric DBR sequentially arranged from bottom to top, where a second-class tunnel junction is arranged on one side of the active region close to the upper N-type DBR, where the second-class tunnel junction is embedded in a bottom of the upper N-type DBR and surrounded by the upper N-type DBR, and the substrate layer, the lower N-type DBR, the active region, the upper N-type DBR, the mixed dielectric DBR and the second-class tunnel junction are all coaxial elliptical cylinders; negative electrodes are arranged on the lower N-type DBR, and positive electrodes are arranged on the upper N-type DBRs substrate layer.

Abstract: A system and method for safe use of an optics assembly with an external light source and an optically coupled optics module is disclosed. The system includes an external light module emitting a continuous wave laser through an output port. An optics module has an input port and a memory. The optics module generates a modulated optical signal. The memory stores the power level of the continuous wave laser signal received by the optics module. An optical jumper is provided for coupling the output port with the input port. A communication bus is coupled between a controller and the external light source module. The controller sets the external light source at a low power level and transitions the external light source to a high power level when the stored power level of the continuous wave laser signal received by the optics module exceeds a predetermined level.

Abstract: A multi-terraced structure includes three or more sections with different thicknesses and adjacent to each other in a direction in which an optical waveguide extends. An adjacent pair of the three or more sections includes one section smaller in thickness and closer to an end face of the semiconductor multilayers and another section larger in thickness and farther from the end face of the semiconductor multilayers. The three or more sections include: a first section with a smallest thickness, including the lowermost layer; a second section adjacent to the first section, including the lowermost layer and additionally a stress relief layer composed of a material equal to or lower than Au in Young's modulus; and a third section with a largest thickness, including all layers from the uppermost layer to the lowermost layer.

Abstract: Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g.

Abstract: A pulsed laser diode array driver includes an inductor having a first terminal configured to receive a source voltage, a source capacitor coupled between the first terminal of the inductor and ground, a bypass capacitor connected between a second terminal of the inductor and ground, a bypass switch connected between the second terminal of the inductor and ground, a laser diode array with one or more rows of laser diodes, and one or more laser diode switches, each being connected between a respective row node of the laser diode array and ground. The laser diode switches and the bypass switch are configured to control a current flow through the inductor to produce respective high-current pulses through each row of the laser diode array, each of the high-current pulses corresponding to a peak current of a resonant waveform developed at that row of the laser diode array.

Abstract: Provided are a laser element and a method for manufacturing the same, in which the laser element includes a first clad layer, an optical waveguide disposed on the first clad layer, a second clad layer disposed on the optical waveguide, a first electrode disposed on the second clad layer, and a dummy clad disposed on the optical waveguide and apart from the second clad layer and the first electrode.

Abstract: A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.

Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode switch has a drain node connected to the second terminal of the inductor. A laser diode has an anode connected to a source node of the laser diode switch and a cathode connected to a bias voltage node. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: Some embodiments relate to a method for forming a vertical cavity surface emitting laser (VCSEL) structure. The method includes forming an optically active layer over a lower reflective layer and forming an upper reflector over the optically active layer. A first spacer is formed along sidewalls of the upper reflector. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer. A first etch process is performed on the lower reflective layer and the oxidized peripheral region, thereby forming a lower reflector and an optically active region.

Abstract: A macroscopic entanglement state in which a polarization state has a strong quantum correlation is realized by use of a macroscopic laser light. A laser oscillator includes a ring resonator having an optical fiber ring, an optical amplifier for maintaining an amplitude of a laser pulsed light propagating on the optical fiber ring, and three optical fibers that are connected with respective polarization controllers, and, after changing a polarization state of the laser pulsed light being a qubit extracted at a predetermined branch ratio from the optical fiber ring by the polarization controllers, couples the changed laser pulsed light whose polarization state has been changed with the laser pulsed light propagating on the optical fiber ring, and each polarization controller rotates the polarization state of the laser pulsed light with an S1 axis, an S2 axis, and an S3 axis, which are orthogonal to each other, as a rotation axis.

Abstract: Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

Abstract: A VCSEL can include: a substrate that passes light therethrough; a phase matching layer over a top mirror stack; a first metal layer over the phase matching layer; and an end metal region over the first metal layer. The phase matching layer and first metal layer have a cooperative thickness to provide reflectivity of at least a predetermined reflectivity threshold for the emission wavelength. A method of making a VCSEL can include: providing a substrate; forming a first mirror stack above the substrate; forming an active region above the first mirror stack; and forming a reflective end above the active region, the reflective end having a phase matching layer and a first metal layer. The phase matching layer and first metal layer have a combined thickness for the reflective end to have a reflectivity of at least a predetermined reflectivity threshold for an emission wavelength of the VCSEL.

Abstract: A frequency stabilization method and system for tunable light sources based on characteristic curve reconstruction are provided, which relate the field of frequency stabilization technologies of modulation absorption spectrum. A set of frequency stabilization control method and system based on internal modulation absorption spectroscopy of light source is constructed, and a high-precision laser frequency stabilization method under large-amplitude and high-bandwidth frequency modulation based on frequency discrimination curve reconstruction is proposed to solve a problem that it is difficult for micro-probe laser interferometry measurement benchmark to balance large-amplitude and high-bandwidth frequency modulation, and high-precision frequency stabilization, resulting in that it is difficult to obtain high relative accuracy measurement under large-range measurement.

Abstract: A photonic integrated circuit (PIC) assembly comprising a semiconductor optical amplifier (SOA) array and a U-turn chip. The SOA array includes an input SOA and a plurality of SOAs. The input SOA and the plurality of SOAs are arranged parallel to one another. The U-turn chip includes an optical splitter and a waveguide assembly. The optical splitter is configured to receive amplified input light propagating in a first direction from the input SOA, and divide the amplified light into beams. The waveguide assembly guides the beams to a corresponding SOA of the plurality of SOAs, and adjusts a direction of prorogation of each of the guided beams to be substantially parallel to a second direction that is substantially opposite the first direction.

Abstract: There is provided a semiconductor light emitting device that allows the internal resistance to be improved. A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first housing member and a second housing member at least one of which has a wiring structure; and an electrically conductive bonding section. The first housing member and the second housing member house the light emitting element. The wiring structure electrically couples the light emitting element and an outside. The electrically conductive bonding section bonds the first housing member and the second housing member. The electrically conductive bonding section is electrically coupled to the wiring structure.

Abstract: Consistent with the present disclosure, an output of a seed laser is split by a series of first coupler stages and each split portion is provided to a respective laser in an array of secondary lasers to realized injection locking of the laser array. Undesired light output from the secondary laser array back to the seed laser is monitored and the phase of such light is adjusted so that such light is subject to destructive interference and its power is minimized. Accordingly, light output from the secondary laser array back to the seed laser does not degrade the performance of the seed laser. On the other hand, light intended for output from the secondary laser array is combined through a second series of coupler stages and monitored at each stage. The phase of the output of each laser in the array is controlled to equal or be aligned with one another such that laser array outputs constructively interfere with one another. As a result, the combined output power is maximized.

Abstract: The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber.

Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.