Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device that includes an anode, a cathode, and one or more curved apertures located in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges crossing the curved aperture that allow current to flow inside the curved aperture, in which when a current signal is applied to the VCSEL, current flow between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.

Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

Abstract: A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Abstract: Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Abstract: A light-emitting device comprising VCSELs formed in a die. The VCSEL distribution is characterized by an essentially linear decrease in VCSEL density over the die from a highest VCSEL density in a first die region to a lowest VCSEL density in another die region. The VCSELs share a common anode and a common cathode for collective switching of the plurality of VCSELs. A method of manufacturing such a VCSEL die is also described.

Abstract: A semiconductor optical amplifier includes a conductive region that is provided on a substrate and allows light transmission, and a nonconductive region that is provided around the conductive region and prohibits light transmission. The conductive region includes a first region including a light-coupling portion to which light from an external light-source unit is coupled, and a second region having a narrower width than the first region and connected to the first region through a connecting portion, the second region including a light-amplifying portion amplifying the light from the light-coupling portion by propagating the light in a predetermined propagating direction along a surface of the substrate, the light-amplifying portion outputting the amplified light in a direction intersecting the surface of the substrate.

Abstract: An integrated optical sensor enables the detection and identification of one or more remote gases using a transmission filter that matches specific absorption features of a remote gas and is detected using a single photodetection element. The sensor comprises an integrated optical component that is characterized by its transmission spectrum which corresponds to absorption or emission features of a target gas over a defined spectral bandpass, and the ability to have a reversibly tunable transmission spectrum. The change in the optical power output from the sensor as the transmission spectrum is tuned is proportional to the optical depth of the target gas absorption lines when viewed with a background light source. The optical power output from the integrated optical component is therefore related to the absorption spectrum of the input light Physical properties of the sensor are tailored to produce a quasi-periodic transmission spectrum that results in a stronger signal contrast for a specific gas.

Abstract: A surface-emitting semiconductor laser includes a substrate, a first electrode provided in contact with the substrate, a first light reflection layer provided over the substrate, a second light reflection layer provided over the substrate, an active layer provided between the second light reflection layer and the first light reflection layer, a current confining layer that is provided between the active layer and the second light reflection layer and includes a current injection region, a second electrode provided over the substrate, with the second light reflection layer being interposed between the second electrode and the substrate, and a contact layer that is provided between the second electrode and the second light reflection layer and includes a contact region that is in contact with the second electrode, in which the contact region has a smaller area than an area of the current injection region.

Abstract: A dual-comb spectrometer comprising two lasers outputting respective frequency combs having a frequency offset between their intermode beat frequencies. One laser acts as a master and the other as a follower. Although the master laser is driven nominally with a DC drive signal, the current on its drive input line nevertheless oscillates with an AC component that follows the beating of the intermode comb lines lasing in the driven master laser. This effect is exploited by tapping off this AC component and mixing it with a reference frequency to provide the required frequency offset, the mixed signal then being supplied to the follower laser as the AC component of its drive signal. The respective frequency combs in the optical domain are thus phase-locked relative to each other in one degree of freedom, so that the electrical signals obtained by multi-heterodyning the two optical signals are frequency stabilized.

Abstract: A light emitting device includes a substrate, a light emitting element, a driving element, and a capacitor layer. The light emitting element and the driving element are provided on the substrate. The driving element drives the light emitting element. The capacitor layer is provided in the substrate and supplies electric current to the light emitting element via the driving element.

Abstract: The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber.

Abstract: A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).

Abstract: A dual-comb spectrometer comprising two lasers outputting respective frequency combs having a frequency offset between their intermode beat frequencies. One laser acts as a master and the other as a follower. Although the master laser is driven nominally with a DC drive signal, the current on its drive input line nevertheless oscillates with an AC component that follows the beating of the intermode comb lines lasing in the driven master laser. This effect is exploited by tapping off this AC component and mixing it with a reference frequency to provide the required frequency offset, the mixed signal then being supplied to the follower laser as the AC component of its drive signal. The respective frequency combs in the optical domain are thus phase-locked relative to each other in one degree of freedom, so that the electrical signals obtained by multi-heterodyning the two optical signals are frequency stabilized.

Abstract: A beam combining device and method for a Bragg grating external-cavity laser module has a plurality of side by side light-emitting modules that use a Bragg grating to perform wavelength locking. Output light of the modules is incident to a beam combining element after passing through a focusing optical element for beam combining, and light subjected to beam combining is reflected partially and transmitted partially under the effect of a light splitting element. A part is incident into a dispersion element at a diffraction angle of the element. Parallel light is formed under the effect of a conversion optical element. Spots of the light beams of corresponding wavelengths of the light-emitting modules are formed on an image acquisition mechanism. Whether the wavelengths of the corresponding light-emitting modules are locked is determined by whether there is a deviation between preset spots and spots formed by the module on the acquisition mechanism.

Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode switch has a drain node connected to the second terminal of the inductor. A laser diode has an anode connected to a source node of the laser diode switch and a cathode connected to a bias voltage node. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of excitor density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.