Abstract: A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

Abstract: A plurality of surface emitting lasers are formed on the single surface emitting laser element. The plurality of surface emitting lasers have respective emission wavelengths selected from wavelengths satisfying condition of: 0<?1??s?5.36×10?5?c2?×5.83×10?2?c+32.4 where a first emission wavelength is ?1 [nm], a second emission wavelength shorter than the first emission wavelength is ?s [nm], and a middle wavelength between the first emission wavelength and the second emission wavelength is ?c [nm]. At least one of the plurality of surface emitting lasers has an emission wavelength different from an emission wavelength of another surface emitting laser.

Abstract: A light-emitting module includes a substrate, a first surface-emitting laser mounted on the substrate, the first surface-emitting laser having a first engaging portion protruded outward at an end, and a second surface-emitting laser mounted on the substrate, the second surface-emitting laser having a second engaging portion recessed inward at an end. The first surface-emitting laser and the second surface-emitting laser are adjacent to each other. The first engaging portion and the second engaging portion are engaged with each other.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

Abstract: A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

Abstract: A tunable laser includes a reflective semiconductor optical amplifier (SOA), a grating codirectional coupler, and a reflective microring resonator. The grating codirectional coupler and the reflective microring resonator are both formed on a silicon base. An anti-reflection film is disposed on a first end surface of the reflective SOA, and the first end surface is an end surface, coupled to a first waveguide of the grating codirectional coupler, of the reflective SOA. A second waveguide of the grating codirectional coupler is coupled to the first waveguide, a first grating is disposed on the first waveguide, a second grating disposed opposite to the first grating is disposed on the second waveguide, and the first grating and the second grating constitute a narrow-band pass filter. The second waveguide is connected to the reflective microring resonator.

Abstract: A surface-emitting laser includes a substrate; semiconductor layers provided on the substrate, the semiconductor layers including a lower reflector layer, an active layer, and an upper reflector layer, the semiconductor layers forming a mesa; a first insulating film covering the mesa; and a second insulating film covering the first insulating film, wherein the mesa has a polygonal shape in a direction in which the substrate extends, and a vertex of the mesa in the direction in which the substrate extends has a chamfered portion.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Abstract: An optical device and a light-source device. The optical device includes a first substrate having a first plane and elements, and a second substrate having a second face that faces the first plane. The elements are disposed on the first substrate to emit or receive light in a direction intersecting with the first plane. The second substrate includes lenses disposed to correspond to the elements, and the second substrate extends in a first direction parallel to the second face to contact the first plane. The second substrate has a joint used to determine spacing between the first substrate and the second substrate, and the joint contacts the first substrate with an area smaller than a maximum size of cross-sectional area parallel to the second face of the joint. The light-source device includes the optical device and a driver to drive the optical device.

Abstract: A laser apparatus according to the present disclosure includes: a laser output unit configured to perform laser oscillation; and a control unit configured to acquire first laser performance data obtained when the laser output unit performs laser oscillation based on a first laser control parameter, and second laser performance data obtained when the laser output unit performs laser oscillation based on a second laser control parameter, while laser output from the laser output unit to an external device is stopped, and determine whether the second laser performance data has been improved as compared to the first laser performance data.

Abstract: A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Abstract: A light emitting device includes semiconductor laser elements, a frame part, a light-reflective member, a step part, metal films, wires, and a first protective element. The frame part surrounds a bottom surface on which the semiconductor laser elements are disposed. The light-reflective member is disposed on the bottom surface inside of a frame formed by the frame part. The step part is formed along a second inner lateral surface of the frame part, and disposed inside of the frame. The metal films are provided on an upper surface of the step part. The wires electrically connect the semiconductor laser elements respectively to the metal films. The first protective element is disposed on the upper surface of the step part and on a light traveling side of the laser light with respect to a plane including an emitting end surface of the first semiconductor laser element.

Abstract: A vertical cavity surface emitting laser (VCSEL) has first and second electrical contacts, and an optical resonator. The optical resonator has first and second distributed Bragg reflectors (DBRs), an active layer, a distributed heterojunction bipolar phototransistor (DHBP), and an optical guide. The DHBP has a collector layer, light sensitive layer; a base layer; and an emitter layer. There is an optical coupling between the active layer and the DHBP for providing an active carrier confinement by the DHBP. The optical guide guides an optical mode within the optical resonator during operation. The optical guide is outside a current flow which can be provided by the first and second electrical contacts during operation of the VCSEL. The optical guide is outside a layer sequence between the first and second electrical contacts in the vertical direction of the VCSEL. The optical guide has an oxide aperture arranged in the second DBR.

Abstract: Methods for driving a tunable laser with integrated tuning elements are disclosed. The methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable. In some examples, the tuning current and laser injection current are modulated simultaneously and a wider tuning range can result. In some examples, one or both of these currents is sinusoidally modulated. In some examples, a constant output power can be achieved while tuning the emission wavelength. In some examples, the output power and tuning can follow a linear relationship. In some examples, injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit values between the targeted and actual output power and tuning waveforms.

Abstract: Embodiments of the present disclosure provide a laser array, a laser source, and a laser projection device, and relate to the field of laser display technologies. The laser array includes a light emitting portion for emitting a laser light beam; a light transmitting portion disposed along a light emitting direction of the light emitting portion for transmitting the laser light beam; where the light transmitting portion includes a first light transmitting region and a second light transmitting region, the first light transmitting region and the second light transmitting region are disposed such that light beams transmitting through the two regions have different polarization directions, which can reduce coherence of the laser light beam emitted from the laser array, thereby facilitating elimination of a speckle.

Abstract: An external-cavity semiconductor laser includes a semiconductor laser element containing a gallium nitride material, a first lens disposed in an optical path of light emitted from the semiconductor laser element, a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength, a second lens disposed in an optical path of light transmitted through the wavelength selective element, an output coupler disposed in an optical path of light condensed through the second lens, and a light-transmissive protective member bonded to at least one surface of the output coupler. The second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a surface of the output coupler. The protective member covers the surface of the output coupler on which the image is formed.

Abstract: A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.

Abstract: A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.

Abstract: A laser diode driver includes a clock terminal to receive a clock signal, configuration terminals to receive configuration data, drive terminals, and charging terminals. A first charging terminal is operable to charge a source capacitor of a resonant circuit that includes the source capacitor, an inductor, and a bypass capacitor. Each drive terminal is operable to be directly electrically connected to an anode or cathode of a laser diode or to ground. A mode, output selection, and grouping of drive signals that are delivered to the laser diodes are configured based on the configuration data. The laser diode driver is operable to control a current flow through the resonant circuit to produce high-current pulses through the laser diodes, the high-current pulses corresponding to a peak current of a resonant waveform developed at respective anodes of the laser diodes, a timing of the high-current pulses being synchronized using the clock signal.