Patents by Inventor A-Shen Chang
A-Shen Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11665977Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.Type: GrantFiled: May 29, 2020Date of Patent: May 30, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Yu-Feng Yin, An-Shen Chang, Han-Ting Tsai, Qiang Fu
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Publication number: 20230127319Abstract: An optical probe includes a cylindrical lens adapted to receive and transmit incident light. A light-emitting surface of the cylindrical lens is a curved end surface having a concentric ring-shaped diffractive microstructure. A working position of the optical probe is a position where a diffraction order is 1 when the incident light having a design wavelength between a first wavelength and a second wavelength passes through the diffractive microstructure. When passing through the cylindrical lens, the incident light having the first wavelength produces a diffraction effect with the diffractive microstructure and is converged at a first wavelength working position approximately the same as the working position of the optical probe with the diffraction order of 1. After being refracted by the curved end surface, the incident light having the second wavelength is converged at a second wavelength working position approximately the same as the working position of the optical probe.Type: ApplicationFiled: December 20, 2021Publication date: April 27, 2023Applicant: Industrial Technology Research InstituteInventors: Chy-Lin Wang, Chi-Shen Chang, Yuan-Chin Lee
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Publication number: 20230123293Abstract: An antenna module includes an antenna box and a first connection wire. The antenna box can include a first antenna, a second antenna, a first connection terminal, a second connection terminal and a housing. The first and second antennas are located in the housing and the housing has a first opening collectively exposing a portion of the first connection terminal and a portion of the second connection terminal. Each of the first and second antennas is adapted to receive or transmit wireless signals according to one of a plurality of wireless communication standards and the first and second antennas are electrically connected to the first and second connection terminals, respectively. The wireless communication standards can be different from each other.Type: ApplicationFiled: October 17, 2022Publication date: April 20, 2023Inventors: Tsai-Yi Yang, Yung-Sheng Tseng, Bo-Yuan Chang, Sheng-Shen Chang, Yu-Hua Chen, Shih-Shih Chien, En-Chin Wei
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Patent number: 11606226Abstract: An example method for a programmable infrastructure gateway for enabling hybrid cloud services in a network environment is provided and includes receiving an instruction from a hybrid cloud application executing in a private cloud, interpreting the instruction according to a hybrid cloud application programming interface, and executing the interpreted instruction in a public cloud using a cloud adapter. The method is generally executed in the infrastructure gateway including a programmable integration framework allowing generation of various cloud adapters using a cloud adapter software development kit, the cloud adapter being generated and programmed to be compatible with a specific public cloud platform of the public cloud.Type: GrantFiled: April 2, 2021Date of Patent: March 14, 2023Assignee: Cisco Technology, Inc.Inventors: Nagaraj A. Bagepalli, David Wei-Shen Chang, Abhijit Patra, Murali Anantha, Prashanth Thumbargudi
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Patent number: 11583169Abstract: An optical fiber scanning probe includes a rotor and at least one optical fiber. The rotor includes a torque rope rotatable about its central axis. The optical fiber is disposed on the rotor and eccentric relative to the torque rope. A central axis of the optical fiber is substantially parallel to the central axis of the torque rope. When the torque rope rotates about its central axis, the rotor brings a free end of the optical fiber to scan along an arc path.Type: GrantFiled: August 7, 2020Date of Patent: February 21, 2023Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chun-Chieh Huang, Yuan Chin Lee, Chi Shen Chang, Hung Chih Chiang
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Patent number: 11545619Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.Type: GrantFiled: July 21, 2020Date of Patent: January 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsing-Hsiang Wang, Han-Ting Lin, Yu-Feng Yin, Sin-Yi Yang, Chen-Jung Wang, Yin-Hao Wu, Kun-Yi Li, Meng-Chieh Wen, Lin-Ting Lin, Jiann-Horng Lin, An-Shen Chang, Huan-Just Lin
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Publication number: 20220336727Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.Type: ApplicationFiled: June 30, 2022Publication date: October 20, 2022Inventors: Tai-Yen Peng, Hui-Hsien Wei, Han-Ting Lin, Sin-Yi Yang, Yu-Shu Chen, An-Shen Chang, Qiang Fu, Chen-Jung Wang
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Patent number: 11476592Abstract: An antenna module includes an antenna box and a first connection wire. The antenna box can include a first antenna, a second antenna, a first connection terminal, a second connection terminal and a housing. The first and second antennas are located in the housing and the housing has a first opening collectively exposing a portion of the first connection terminal and a portion of the second connection terminal. Each of the first and second antennas is adapted to receive or transmit wireless signals according to one of a plurality of wireless communication standards and the first and second antennas are electrically connected to the first and second connection terminals, respectively. The wireless communication standards can be different from each other.Type: GrantFiled: July 27, 2020Date of Patent: October 18, 2022Assignee: TAOGLAS GROUP HOLDINGS LIMITEDInventors: Tsai-Yi Yang, Yung-Sheng Tseng, Bo-Yuan Chang, Sheng-Shen Chang, Yu-Hua Chen, Shih-Shih Chien, En-Chin Wei
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Publication number: 20220328755Abstract: The present disclosure provides a semiconductor structure, including a first metal line over a first region of the substrate, a first magnetic tunnel junction (MTJ) and a second MTJ over the first region of the substrate, and a top electrode extending over the first MTJ and the second MTJ, wherein the top electrode includes a protruding portion at a bottom surface of the top electrode.Type: ApplicationFiled: June 29, 2022Publication date: October 13, 2022Inventors: YU-FENG YIN, TAI-YEN PENG, AN-SHEN CHANG, HAN-TING TSAI, QIANG FU, CHUNG-TE LIN
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Patent number: 11430989Abstract: An anode active material of a lithium-ion battery is provided. The active material of the anode of the lithium-ion battery includes silicon, tin and copper-zinc alloy, in which tin is substantially in an elemental state. Moreover, an anode of a lithium-ion battery is provided. The anode of the lithium-ion battery includes the active material as mentioned above.Type: GrantFiled: December 19, 2019Date of Patent: August 30, 2022Assignee: Daxin Materials CorporationInventors: Jui-Shen Chang, Yun-Shan Lo, Kuo-Cheng Huang
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Patent number: 11417832Abstract: The present disclosure provides a semiconductor structure, including a substrate, including a first region and a second region adjacent to the first region, a magnetic tunnel junction (MTJ) over the first region, a spacer on a sidewall of the MTJ, a hard mask over the MTJ, a first dielectric layer laterally surrounding the spacer and the hard mask, a top electrode over the hard mask, and an etch stop stack laterally surrounding the top electrode.Type: GrantFiled: August 31, 2020Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
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Patent number: 11387406Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.Type: GrantFiled: January 17, 2020Date of Patent: July 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tai-Yen Peng, Hui-Hsien Wei, Han-Ting Lin, Sin-Yi Yang, Yu-Shu Chen, An-Shen Chang, Qiang Fu, Chen-Jung Wang
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Publication number: 20220192750Abstract: An OCT scanning probe includes a tubular housing, at least one electrode, an optical fiber scanner and an auxiliary localization component. The electrode is disposed on an outer surface of the tubular housing. The optical fiber scanner is disposed in the tubular housing and includes an optical fiber and an optical element. The optical element is disposed on an emitting end of the optical fiber and at corresponding position to a light transmittable portion of the tubular housing. The auxiliary localization component is disposed on the tubular housing, and overlaps part of the light transmittable portion. A light beam emitted from the optical fiber scanner passes through the light transmittable portion to obtain a tomographic image. An interaction of the light beam with the auxiliary localization component causes a characteristic in the tomographic image, with the characteristic corresponding to the auxiliary localization component.Type: ApplicationFiled: December 17, 2020Publication date: June 23, 2022Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: De Yi CHIOU, Kai-Hsiang CHEN, Chi Shen CHANG
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Patent number: 11344386Abstract: A multilayer sheet for a dental appliance provided in the present disclosure includes a core layer having a tensile modulus greater than about 1400 MPa and an elongation at break greater than about 3%; and a first skin layer and a second skin layer sandwiching the core layer, wherein each of the first skin layer and the second skin layer independently has a water contact angle greater than 72° and/or a surface energy less than about 40 mN/m. The first skin layer and the second skin layer are the outermost layers of the multilayer sheet. A dental appliance made from the multilayer sheet structure is also provided.Type: GrantFiled: January 30, 2019Date of Patent: May 31, 2022Assignee: USI CORPORATIONInventors: Moh-Ching Oliver Chang, Tsai-Ting Hsu, Yung-Shen Chang
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Publication number: 20220069201Abstract: The present disclosure provides a semiconductor structure, including a substrate, including a first region and a second region adjacent to the first region, a magnetic tunnel junction (MTJ) over the first region, a spacer on a sidewall of the MTJ, a hard mask over the MTJ, a first dielectric layer laterally surrounding the spacer and the hard mask, a top electrode over the hard mask, and an etch stop stack laterally surrounding the top electrode.Type: ApplicationFiled: August 31, 2020Publication date: March 3, 2022Inventors: YU-FENG YIN, TAI-YEN PENG, AN-SHEN CHANG, HAN-TING TSAI, QIANG FU, CHUNG-TE LIN
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Publication number: 20220029091Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.Type: ApplicationFiled: July 21, 2020Publication date: January 27, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsing-Hsiang WANG, Han-Ting LIN, Yu-Feng YIN, Sin-Yi YANG, Chen-Jung WANG, Yin-Hao WU, Kun-Yi LI, Meng-Chieh WEN, Lin-Ting LIN, Jiann-Horng LIN, An-Shen CHANG, Huan-Just LIN
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Publication number: 20210391532Abstract: A memory array device includes an array of memory cells located over a substrate, a memory-level dielectric layer laterally surrounding the array of memory cells, and top-interconnection metal lines laterally extending along a horizontal direction and contacting a respective row of top electrodes within the memory cells. Top electrodes of the memory cells are planarized to provide top surfaces that are coplanar with the top surface of the memory-level dielectric layer. The top-interconnection metal lines do not extend below the horizontal plane including the top surface of the memory-level dielectric layer, and prevent electrical shorts between the top-interconnection metal lines and components of memory cells.Type: ApplicationFiled: April 7, 2021Publication date: December 16, 2021Inventors: Yu-Feng YIN, Tai-Yen PENG, An-Shen CHANG, Han-Ting TSAI, Qiang FU, Chung-Te LIN
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Publication number: 20210376228Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Tai-Yen Peng, Yu-Feng Yin, An-Shen Chang, Han-Ting Tsai, Qiang Fu
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Publication number: 20210376231Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.Type: ApplicationFiled: March 12, 2021Publication date: December 2, 2021Inventors: Yu-Feng YIN, Tai-Yen PENG, An-Shen CHANG, Han-Ting TSAI, Qiang FU, Chung-Te LIN
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Publication number: 20210376141Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Chia Tai Lin, Yih-Ann Lin, An-Shen Chang, Ryan Chen, Chao-Cheng Chen