Abstract: A process of manufacturing a Fin-FET device, and the process includes following steps. An active fin structure and a dummy fin structure are formed from a substrate, and an isolation layer is covered over the active fin structure and the dummy fin structure. Then, the isolation layer above the dummy fin structure is removed, and the dummy fin structure is selectively etched, which a selective ratio of the dummy fin structure to the isolation layer is over 8.

Abstract: A virtual image display system adapted for venipuncture applications is provided. The virtual image display system includes at least one infrared light source, at least one image sensing module, and at least one virtual image display module. The at least one infrared light source is configured to emit at least one infrared light to a tissue having a vein. The at least one image sensing module is configured to receive the infrared light from the tissue so as to sense an image of the vein. The at least one virtual image display module is disposed in front of at least one eye of a user. The at least one virtual image display module includes an image display unit configured to show an image of the vein to the at least one eye of the user.

Abstract: Common problems when programming 3D NAND Flash memory having alternating page orientation include the back-pattern effect and pattern-induced program disturb. Improved programming techniques may substantially reduce these problems and, in turn, increase precision when setting memory cells' threshold voltages. Provided are exemplary techniques that combine aspects of “by-word-line” programming and “by-page” programming. As such, each page may be programmed beginning with the memory cells that are closest to string select structures, and memory cells on multiple even or odd pages may be programmed substantially simultaneously.

Abstract: A softphone feature interface method, system, and apparatus are provided for operating a mobile communication device as a softphone to place Internet phone calls by displaying a home user interface on a touch screen with a unified view having a display interface area and a keyboard interface area, and then displaying a second user interface on the touch screen for displaying user call information in response to receiving touch input on the home user interface of the touch screen to display a list of contacts that match a contact result search entered on the search keypad or to display a contacts user interface or voicemail user interface in response to detecting a slide operation on the home user interface or to display one or more calling methods available for selection in response to detecting a call button being pressed for a minimum specified hold time.

Abstract: Control transistors and memory cells within 3D NAND Flash memory arrays may both be created using the same technology, such as charge trapping structures, to simplify the fabrication process. However, the resulting control transistors may initially have higher variability in threshold voltages, when compared to traditional gate-oxide-based control transistors. Provided are exemplary techniques to trim control transistors to provide increased reliability and performance during array operation.

Abstract: A particle manipulation system and a projection device are provided. The projection device includes an image source and a projection lens. The image source provides an image beam. The projection lens is disposed on a light path of the image beam and includes a zoom lens set and a focusing lens set. The zoom lens set is disposed on the light path of the image beam from the image source and includes at least two lens groups disposed in sequence on the light path of the image beam. The focusing lens set is disposed on the light path of the image beam. The zoom lens set is disposed between the image source and the focusing lens set. A photoconductor chip is disposed on the light path of the image beam from the projection lens.

Abstract: Control transistors and memory cells within 3D NAND Flash memory arrays may both be created using the same technology, such as charge trapping structures, to simplify the fabrication process. However, the resulting control transistors may initially have higher variability in threshold voltages, when compared to traditional gate-oxide-based control transistors. Provided are exemplary techniques to trim control transistors to provide increased reliability and performance during array operation.

Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.

Abstract: Common problems when programming 3D NAND Flash memory having alternating page orientation include the back-pattern effect and pattern-induced program disturb. Improved programming techniques may substantially reduce these problems and, in turn, increase precision when setting memory cells' threshold voltages. Provided are exemplary techniques that combine aspects of “by-word-line” programming and “by-page” programming. As such, each page may be programmed beginning with the memory cells that are closest to string select structures, and memory cells on multiple even or odd pages may be programmed substantially simultaneously.

Abstract: A method includes simulating network resources of a portion of a cloud in a simulated cloud within a enterprise network, the cloud being communicable with the enterprise network over a first communication channel, which may be external to the enterprise network. The method can also include simulating network behavior of the first communication channel in a second communication channel within the enterprise network, and validating application performance in the simulated cloud. Simulating network resources includes providing a cloud resources abstraction layer in the enterprise network, and allocating enterprise network resources in the enterprise network to the simulated cloud by the cloud resources abstraction layer. The method further includes adding a virtual network service appliance to the simulated cloud, and determining a change to a network topology of the enterprise network to accommodate the virtual appliance without materially impacting application performance.

Abstract: A method includes managing a virtual machine (VM) in a cloud extension, where the VM is part of a distributed virtual switch (DVS) of an enterprise network, abstracting an interface that is transparent to a cloud infrastructure of the cloud extension, and intercepting network traffic from the VM, where the VM can communicate securely with the enterprise network. The cloud extension comprises a nested VM container (NVC) that includes an emulator configured to enable abstracting the interface, and dual transmission control protocol/Internet Protocol stacks for supporting a first routing domain for communication with the cloud extension, and a second routing domain for communication with the enterprise network. The NVC may be agnostic with respect to operating systems running on the VM. The method further includes migrating the VM from the enterprise network to the cloud extension through suitable methods.

Abstract: A method for fabricating a fin-type field-effect transistor (FinFET) device includes receiving a precursor. The precursor has a plurality of fins over a substrate and a dielectric layer filling in a space between each of fins and extending above the fins. The method also includes forming a patterned hard mask layer having an opening over the dielectric layer, etching the dielectric layer through the opening to form a trench with vertical profile. A subset of the fins is exposed in the trench. The method also includes performing an isotropic dielectric etch to enlarge the trench in a horizontal direction. The method also includes performing an anisotropic etch to recess the subset of fins in the trench and performing an isotropic fin etch to etch the recessed subset of fins.

Abstract: A dynamical focus adjustment method is applied to a dynamical focus adjustment system. The dynamical focus adjustment method includes setting a focus area within a display window on a screen, making a first video by a first focus value when an object passes the focus area, displaying the first video on a play window of the screen, and determining whether a focus adjusting function is actuated according to an image of the first video on the play window.

Abstract: A pre-reading method and a programming method for a 3D NAND flash memory are provided. The pre-reading method comprises the following steps. A selected string includes a first memory cell, two second memory cells and a plurality of third memory cells. The two second memory cells are adjacent to the first memory cell. The third memory cells are not adjacent to the first memory cell. A first pass voltage is applied on the second memory cells, a second pass voltage is applied on the third memory cells, and a read voltage is applied on the first memory cell via a plurality of word lines for reading a data of the first memory cell. The first pass voltage is larger than the second pass voltage.

Abstract: A memory device is described that includes a three-dimensional array of memory cells having a plurality of levels of memory cells accessed by a plurality of word lines, and a plurality of bit lines. Control circuitry is coupled to the plurality of word lines and the plurality of bit lines. The control circuitry is adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.

Abstract: A method for making a carbon nanotube composite preform includes following steps. A substrate is provided. Carbon nanotubes are formed on the substrate. The carbon nanotubes and the substrate are placed in a solvent for a predetermined time. The carbon nanotubes and the substrate are drawn from the solvent. The carbon nanotubes and the substrate are dried.

Abstract: An example method for a programmable infrastructure gateway for enabling hybrid cloud services in a network environment is provided and includes receiving an instruction from a hybrid cloud application executing in a private cloud, interpreting the instruction according to a hybrid cloud application programming interface, and executing the interpreted instruction in a public cloud using a cloud adapter. The method is generally executed in the infrastructure gateway including a programmable integration framework allowing generation of various cloud adapters using a cloud adapter software development kit, the cloud adapter being generated and programmed to be compatible with a specific public cloud platform of the public cloud.

Abstract: An electronic device includes a first housing with a first air inlet and outlet, a heat dissipation assembly, and a filter structure between the first housing and the heat dissipation assembly. The heat dissipation assembly defines a second air inlet and outlet. The first air inlet, the second air inlet, the second air outlet and the first air outlet communicate with each other. The heat dissipation assembly draws air across itself from the two air inlets, and expels the air from the two air outlets. The filter structure covers the second air inlet and defines a plurality of very small holes which function to filter dust out from the incoming air.

Abstract: An optically-induced dielectrophoresis device includes a first substrate, a first conductive layer, a first patterned photoconductor layer, a first patterned layer, a second substrate, a second conductive layer, and a spacer. The first conductive layer is disposed on the first substrate. The first patterned photoconductor layer is disposed on the first conductive layer. The first patterned layer is disposed on the first conductive layer. The first patterned photoconductor layer and the first patterned layer are distributed alternately over the first conductive layer. Resistivity of the first patterned photoconductor layer is not equal to resistivity of the first patterned layer. At least one of the first substrate and the second substrate is pervious to a light. The second conductive layer is disposed on the second substrate and between the first substrate and the second substrate. The spacer connects the first substrate and the second substrate.

Abstract: A projection lens, a projection device and an optically-induced microparticle device are provided. The projection lens includes an aperture, a first and a second lens groups. The aperture, the first and the second lens groups are disposed on a projection path of an image. The aperture is between the first and the second lens groups. The first and the second lens groups are suitable for interchanging with each other to switch the magnification ratio. When in a first state, the first lens group is between the object and the aperture and the second lens group is between the aperture and a projection surface, herein the projection lens has a first magnification ratio. When in a second state, the first lens group is between the aperture and the projection surface, and the second lens group is between the object and the aperture, herein the projection lens has a second magnification ratio.