Abstract: A PCI-Express data link transmitter includes a plurality of arbiters, each employing a distinct priority rule to select one of multiple scheduled TLPs and DLLPs based on their distinct types. A selector selects one of the arbiters to select the one of the multiple scheduled TLPs and DLLPs for transmission. A programmable storage element provides a value to control the selector. In one embodiment, the distinct priority rule employed by at least a first of the arbiters prioritizes TLPs higher than Ack/Nak DLLPs, and the distinct priority rule employed by at least a second of the arbiters prioritizes Ack/Nak DLLPs higher than TLPs. In one embodiment, at least a first arbiter prioritizes TLPs higher than Ack/Nak DLLPs and UpdateFC DLLPs, at least a second arbiter prioritizes Ack/Nak DLLPs higher than TLPs and UpdateFC DLLPs, and at least a third arbiter prioritizes UpdateFC DLLPs higher than TLPs and Ack/Nak DLLPs.

Abstract: An optical touch device is presented. When the optical touch device is in a sleep mode, only one of all image sensors of the optical touch device is enabled to detect an indication object on a touch area, so as to determine a wakeup time of the entire optical touch device.

Abstract: A composition comprising a polymer that comprises oxidated hyaluronic acid cross-linked by a dihydrazide is disclosed. The polymer is a hydrogel exhibiting the following properties: a) transparent and colorless; and b) transforming from a liquid state into a gel-matrix at 37° C. These characteristics make it useful as a vitreous humor substitute.

Abstract: A method for making a probe card includes: mounting a plurality of probe needles on a probe-mounting seat; forming a conductive protective coating on tips of the probe needles; and bonding the probe needles to a printed circuit board through welding techniques after formation of the conductive protective coating on the tips of the probe needles.

Abstract: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

Abstract: A press-key with low light diffusing design, adapted to be received inside a frame of a keyboard, is disclosed, which comprises: a substrate; a keycap, formed with a light-transmissive part, being mounted on the substrate while enabling the same to move vertically up and down in relative to the substrate; a light-emitting unit, disposed inside the keycap at a position below the light-transmissive part; and a light mask, made of an opaque material and being formed as an upward-extending wall surrounding the circumference of the light-emitting unit while allowing an opening to be formed on top thereof at a position corresponding to the light-transmissive part and thus allowing the light emitted from the light-emitting unit to be projected out of the light mask only through the opening of the same and thus to be emanating out of the keycap only through the light-transmissive part.

Abstract: A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer.

Abstract: A clock generator is provided. The clock generator includes a crystal oscillator, an inverter coupled to the crystal oscillator in parallel, a first circuit and a second circuit. The crystal oscillator has a first terminal and a second terminal. The inverter generates a first signal and a second signal at the first and second terminals of the crystal oscillator, respectively. The first circuit coupled to the first terminal of the crystal oscillator generates a first clock signal with a constant frequency according to the first signal. The second circuit coupled to the second terminal of the crystal oscillator generates a second clock signal with a variable frequency according to the second signal.

Abstract: A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Abstract: The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects.

Abstract: The hand-held electronic device includes a central processing unit, a memory unit, a state-detecting unit, a state-determining unit, a main power supply unit, a standby power supply unit, and a power supply switching unit. After determining the presence of a fall state, the state-determining unit will output a fall prevention instruction and which causes the central processing unit to enter a low-potential current mode; meanwhile, the power supply switching unit monitors power output and continues to supply low-potential power. In case of a fall of the hand-held electronic device, the device and method protect operation data and reduce the otherwise power-consuming current. The less power-consuming current is conducive to the reduction of capacitance required for a backup battery. The low-potential current mode is effective in reducing the time taken to recover the operation mode of the electronic device.

Abstract: A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is individually formed in each exposed region of the substrate.

Abstract: The present invention provides a monitor-displayed device for car rear vision. It is to install monitors on a dashboard in the car or the car frame on two sides of the front windscreen. The traditional two rear vision mirrors of the car are replaced by the monitors. Image data taken by an image receiver can be displayed synchronously. Rear side image data can be provided to the driver with a broader viewing angle.

Abstract: The method for temporarily supplying electric power includes steps of: providing a system which has a power supplying unit and a controlling unit for applying a temporary power to a broken semiconductor carrier of the semiconductor carrying facility; utilizing the power supplying unit to supply electric power to the broken semiconductor carrier; and utilizing the controlling unit to control movements of the broken semiconductor carrier. Thereby, the broken semiconductor carrier can be driven to a maintain area efficiently and safely.

Abstract: Disclosed herein are two Lactobacillus isolates having anti-inflammatory activities and beneficial probiotic properties, i.e., Lactobacillus sakei GMNL-76 and Lactobacillus reuteri GMNL-89, which were deposited in the Biosource Collection and Research Center (BCRC) of the Food Industry Research and Development Institute (FIRDI) under accession numbers BCRC 910355 and BCRC 910340 and in the China Center for Type Culture Collection (CCTCC) under accession numbers CCTCC M 207153 and CCTCC M 207154, respectively. The two Lactobacillus isolates and their sub-cultured offspring can be used in the preparation of a variety of food products, and in the manufacture of pharmaceutical compositions for treating and/or alleviating diseases associated with inflammation, such as rheumatoid arthritis.

Abstract: A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.

Abstract: A recording device for a moving vehicle includes an image receiving unit, a speed calculating unit, a time unit, a positioning unit and a storing unit. The recording device records outside images when the vehicle moves via a camera lens of the image receiving unit. The speed calculating unit calculates speed using a speed gauge linked to the vehicle. Users can adjust time according to their demand by utilizing a time calculating function built in the time unit. Coordinates of vehicle location are obtained by a positioning unit linked to a satellite. The data mentioned above is stored in the storing unit. The device is installed inside the vehicle before the vehicle is factory assembled. When users start the vehicle, the recording device starts recording. When users turn off the vehicle and leave, the recording device can be re-started by using a switch. The image receiving unit keeps recording images.

Abstract: A perfume bottle spray head assembly is disclosed to include a nozzle head, a lock cap, a receptacle, a plug, a dip tube, an outer cap and a rotary shut-off control plate. The nozzle head has passage means defined therein to facilitate mixing of liquid perfume with compressed air for enabling well-mixed liquid perfume and compressed air mixture to be sprayed out in a mist. The rotary shut-off control plate is operable to rotate the plug in the receptacle between a close position to shut off the liquid perfume passage and an open position to open the liquid perfume passage.

Abstract: A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.