Abstract: A dual-resonance retractable antenna includes a connector, a telescopic radiating device mounted on the connector, and a radiating tube mounted on the connector around the tubular outer radiating element of the telescopic radiating device and electrically isolated from the telescopic radiating device. By means of moving the telescopic radiating device between the extended position and the received position, the dual-resonance retractable antenna can oscillate at two different resonance frequencies, having multi-band multi-system capabilities for multiplex application.

Abstract: A data link transmitter in a PCI Express device for managing PCI-Express TLPs and DLLPs. The data link transmitter includes a priority system in which a DLLP for initializing flow control has highest priority, and an idle data character has lowest priority. Various embodiments include: a DLLP for power state entrance is lower priority than the DLLP for initializing flow control; a replay TLP for retry buffer re-transmission is lower priority than the DLLP for power state entrance, and a new TLP is lower priority than the replay TLP; an Ack/Nak DLLP is lower priority than the new TLP, a DLLP for updating flow control is lower priority than the Ack/Nak TLP, and a DLLP for acknowledging the DLLP for power state entrance is lower priority than the DLLP for updating flow control; a DLLP for updating flow control is lower priority than the DLLP for power state entrance.

Abstract: A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of AlxInyGa1-x-yN, where 0?x?1 and 0?y?1.

Abstract: A fan assembly for use in an electronic device is provided. The fan assembly includes a housing, a fan, a throttle valve, and a regulator. The housing has an outlet. The fan is disposed in the housing and adapted to provide an air current. The air current generates an air volume through the outlet. The throttle valve is movably disposed in the housing at the outlet. The regulator is connected to the throttle valve to control the movement of the throttle valve to adjust the size of the outlet.

Abstract: The invention discloses a membrane cable including several metal wires, a cover body and a reinforcement plate. The cover body covers the metal wires, and the reinforcement plate is adhered to an external surface of the cover body. The cover body and the metal wires are bended toward the reinforcement plate, and the reinforcement plate can prevent the cover body and the metal wires from being over-bended.

Abstract: A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure.

Abstract: A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers.

Abstract: A PCI Express system and a method of transitioning link state thereof. The PCI Express system includes an upstream component, a downstream component and a link. The upstream component and the downstream component transmit data to each other via the link. When at least one of the upstream component and the downstream component stops data transmission under a normal working state and if the system idle time period reaches a threshold idle time, then transiting the link into a second link state.

Abstract: A method of continuously feeding film pieces for the molding process includes a film preparation task, a film drawing task, a film cutting task and a film feeding task. The film preparation task includes preparing a roll of film and drawing the film out and fixing a head end thereof at a first position. The film drawing task includes holding the film and drawing the film along a film feeding direction to have the head end to a second position. The film cutting task includes cutting the film off to have a film piece,. The film feeding task includes holding the film piece and moving the film piece to a third position. The film preparation task, the film drawing task and film cutting task are repeated in sequence for continuously feeding film pieces for the molding process.

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.

Abstract: A heat dissipation gate control system includes a magnetic element, an electromagnetic element and an elastic element. The magnetic element is coupled to a heat dissipation gate. The electromagnetic element is provided for generating a magnetic force to enable the magnetic element to drive the heat dissipation gate open. The elastic element has an end coupled to the heat dissipation gate and applies an elastic force to the heat dissipation gate to enable the heat dissipation gate closed when the electromagnetic element stops generating the magnetic force for the magnetic element. A method of controlling a heat dissipation gate is also disclosed herein.

Abstract: A personal data assistant (PDA) carrying case includes a main body (10), an expansion cover (40) having a first clasp (46) extending therefrom, a resilient clip (22) mounted on the main body, and a button (29). An opening (33) is defined in the main body for matching the expansion cover. A locking edge (36) is formed for engaging with the first clasp. A through hole (24) is defined in main body corresponding to the first clasp. The resilient clip has a projecting portion (222) corresponding to the through hole. The resilient clip deforms elastically to have the projecting portion pressing the button, so that the button drives the first clasp to disengage the first clasp from the locking edge of the main body.

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract: The present invention provides a radiation emitting semiconductor device, which comprises an active layer for emitting radiation, a p-type conductive layer, a transparent conductive layer, and a non-p-type ohmic contact layer. The p-type conductive layer is formed on the active layer. The transparent conductive layer is formed on the p-type conductive layer. The non-p-type ohmic contact layer is disposed between said p-type conductive layer and said transparent conductive layer. The non-p-type ohmic contact layer is configured to reduce the operating voltage of said radiation emitting semiconductor device. In addition, the present invention provides that the non-p-type ohmic contact layer is made of a quaternary alloy of AlxInyGa1-x-yN.

Abstract: An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes.

Abstract: Disclosed herein are two Lactobacillus isolates having anti-inflammatory activities and beneficial probiotic properties, i.e., Lactobacillus sakei GMNL-76 and Lactobacillus reuteri GMNL-89, which were deposited in the Biosource Collection and Research Center (BCRC) of the Food Industry Research and Development Institute (FIRDI) under accession numbers BCRC 910355 and BCRC 910340 and in the China Center for Type Culture Collection (CCTCC) under accession numbers CCTCC M 207153 and CCTCC M 207154, respectively. The two Lactobacillus isolates and their sub-cultured offspring can be used in the preparation of a variety of food products, and in the manufacture of pharmaceutical compositions for treating and/or alleviating diseases associated with inflammation, such as rheumatoid arthritis.

Abstract: A film feeding machine includes a drawing device to draw a continuous film out of a film base to a predetermined position. The film is held by a feeding device and cut off by a cutting device to have a film piece. The film piece is fed to external equipment by the feeding device. The film feeding machine of the present invention is incorporated in a molding process having advantages of lower cost, lower defective ratio and high production efficiency.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A droplet generation apparatus is applied to a nebulizer. The droplet generation apparatus comprises a vibratable member, a nozzle disc, a housing and a connection member or a fastening plate or both the connection member and the fastening plate. The vibratable member has a first through hole. The nozzle disc has a plurality of apertures facing the first through hole, and is combined with the vibratable member. The connection member is disposed between the vibratable member and the nozzle disc, and has a second through hole corresponding to the first through hole. Alternatively, the fastening plate is combined with the nozzle disc. The housing covers up the combination of the vibratable member, the nozzle disc and the connection member or the fastening plate. Vibration efficiency generated by the vibratable member is improved through the connection member. An accommodation space is formed by the fastening plate and the nozzle disc.