Abstract: An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Abstract: A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

Abstract: A device coupon for use in a hybrid integration process with a silicon platform. The device coupon comprises: an input waveguide, including an input facet; an active waveguide, coupled to the input waveguide, the active waveguide including a III-V semiconductor based electro-optical device; and an output waveguide, configured to couple light between the active waveguide and an output facet. The input waveguide and output waveguide are passive waveguides.

Abstract: A system and method for optical coupling. In some embodiments, the system includes a first semiconductor chip, including a semiconductor optical amplifier; and a second semiconductor chip, including a fork coupler. The fork coupler may includes a plurality of waveguide fingers, and an output waveguide. The waveguide fingers may be configured to guide, together, a first optical mode of the fork coupler; and the fork coupler may be arranged such that an output mode of the semiconductor optical amplifier couples to the first optical mode of the fork coupler.

Abstract: A minimally invasive spectrophotometric system. In some embodiments, the system includes a minimally invasive device and a spectrophotometer. The spectrophotometer may include: a transmitting fiber, a receiving fiber, and a head. The head of the spectrophotometer may include: a light source connected to the transmitting fiber and a photodetector connected to the receiving fiber. A portion of the transmitting fiber may be in an insertion tube of the minimally invasive device, and a portion of the receiving fiber may be in the insertion tube of the minimally invasive device. The head of the spectrophotometer may occupy a volume of less than 300 cubic centimeters.

Abstract: An optical isolator on a silicon photonic integrated circuit. The optical isolator comprising: a polarization splitter; a polarization rotator; and a Faraday rotator. The Faraday rotator comprises: one or more magnets providing a magnetic field; and a silicon spiral delay line. The silicon spiral delay line being formed from a silicon waveguide shaped into a spiral region having no built-in phase shifters and a central region within the spiral region. The central region having no more than a total of 180 degree of phase shifters.

Abstract: Echelle gratings with a shared free propagation region. In some embodiments, a system includes: a first echelle grating; and a second echelle grating. The first echelle grating may include: a first input waveguide having an end on a first Rowland circle; a first grating on the first Rowland circle; and a first output waveguide having an end on the first Rowland circle. The second echelle grating may include: a second input waveguide having an end on a second Rowland circle; a second grating on the second Rowland circle; and a second output waveguide having an end on the second Rowland circle. The second input waveguide may be separate from the first input waveguide, the second output waveguide may be separate from the first output waveguide, and the first Rowland circle may overlap the second Rowland circle.

Abstract: A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.

Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 ?m away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.

Abstract: A method of fabricating a device coupon including a waveguide which is suitable for use in a micro-transfer printing process. The method comprises the steps, on a wafer, of: depositing a lower cladding layer on an uppermost surface of the wafer; providing a silicon nitride guiding layer on an uppermost surface of the lower cladding; depositing an upper cladding over at least an uppermost surface of the silicon nitride guiding layer; providing a tether over the coupon, and etching away a region of the uppermost layer of the wafer located between the lower cladding layer and a substrate of the wafer, thereby leaving the lower cladding layer, silicon nitride guiding layer, and upper cladding layer suspended above the wafer via the tether.

Abstract: The present invention provides a laser comprising a laser cavity defined by a first reflector and a second reflector. The laser cavity comprising a gain region and an intracavity modulation stage for reducing coherence of the laser output. The intracavity modulation stage comprises a region configured to support a plurality of optical modes. The second reflector is a broadband reflector having a reflectance spectrum configured to support the plurality of optical modes.

Abstract: An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

Abstract: A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.

Abstract: A stamp suitable for use in a micro-transfer printing process. The stamp comprises: a carrier layer; a plurality of stamp base sections, wherein: each stamp base section is attached on a first surface to the carrier layer, and separated from each adjacent stamp base section by a gap; and each stamp base section includes one or more stamping posts, for adhering to a source coupon, each stamping post extending from a second surface of its respective stamp base section.

Abstract: An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.

Abstract: The invention refers to a photonic integrated circuit (PIC), the photonic integrated circuit comprising: at least one laser, the laser having a laser output, a measuring portion including a measuring port and configured to measure an intensity and/or wavelength of light input at the measuring port, and an output portion configured to output light from the photonic integrated circuit to the portion of the tissue, wherein optionally the laser includes a ring resonator laser, a laser generating light having a fixed wavelength, a laser being constructed using hybrid integration, and/or a tunable laser.

Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.

Abstract: An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a III-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the III-V semiconductor-based optoelectronic component.