Patents by Inventor Aaron John Zilkie
Aaron John Zilkie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220200244Abstract: A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.Type: ApplicationFiled: February 18, 2022Publication date: June 23, 2022Inventors: Aaron John ZILKIE, Pradeep SRINIVASAN
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Publication number: 20220163824Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 ?m away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.Type: ApplicationFiled: December 2, 2021Publication date: May 26, 2022Inventors: James Dongyoon OH, Hooman ABEDIASL, Gerald Cois BYRD, Karlheinz MUTH, Yi ZHANG, Aaron John ZILKIE
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Patent number: 11342475Abstract: An optoelectronic device, and a method of fabricating an optoelectronic device. The device comprising: a rib waveguide formed of doped silicon, said doped waveguide having a ridge portion, containing an uppermost surface and two sidewall surfaces; and a slab portion, adjacent to the two sidewall surfaces. The device further comprises: a metal contact layer, which directly abuts the uppermost surface and two sidewall surfaces, and which extends along a part of the slab portion so as to provide a Schottky barrier between the metal contact layer and the rib waveguide.Type: GrantFiled: August 20, 2018Date of Patent: May 24, 2022Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Aaron John Zilkie
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Publication number: 20220155521Abstract: A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.Type: ApplicationFiled: November 12, 2020Publication date: May 19, 2022Inventors: Guomin YU, Aaron John ZILKIE
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Patent number: 11327343Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.Type: GrantFiled: May 14, 2019Date of Patent: May 10, 2022Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Aaron John Zilkie
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Publication number: 20220075213Abstract: An optoelectronic device. The device comprising: a multi-layered optically active stack, including one or more layers comprising a lll-V semiconductor material; an input waveguide, arranged to guide light into the stack; and an output waveguide, arranged to guide light out of the stack. The multi-layered optically active stack is butt or edge coupled to the input waveguide and output waveguide.Type: ApplicationFiled: December 18, 2019Publication date: March 10, 2022Inventors: Guomin YU, Aaron John Zilkie
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Publication number: 20220059996Abstract: A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.Type: ApplicationFiled: November 4, 2021Publication date: February 24, 2022Inventors: Aaron John ZILKIE, Pradeep SRINIVASAN
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Patent number: 11209678Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 ?m away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.Type: GrantFiled: February 20, 2019Date of Patent: December 28, 2021Assignee: Rockley Photonics LimitedInventors: Dong Yoon Oh, Hooman Abediasl, Gerald Cois Byrd, Karlheinz Muth, Yi Zhang, Aaron John Zilkie
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Patent number: 11209679Abstract: A photonic integrated circuit, an optoelectronic modulator, and a method of modulating light in a photonic integrated circuit are provided. The photonic integrated circuit comprises: an input waveguide which, in use, receives light in a superposition of two polarisation modes of the waveguide; a polarisation splitter, connected to the input waveguide, and configured to provide, at a first output, light in a first polarisation mode of the two polarisation modes of the waveguide and, at a second output, light in a second polarisation mode of the two polarisation modes of the waveguide; a first polarisation rotator, connected to the first output of the polarisation splitter, and configured to rotate light received therefrom from the first polarisation mode to the second polarisation mode; an optoelectronic modulator, having a first modulation waveguide connected to the first polarisation rotator and a second modulation waveguide connected to the second output of the polarisation splitter.Type: GrantFiled: October 29, 2019Date of Patent: December 28, 2021Assignee: Rockley Photonics LimitedInventors: Thomas Pierre Schrans, Dong Yoon Oh, Aaron John Zilkie
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Publication number: 20210356663Abstract: A device coupon for use in a hybrid integration process with a silicon platform. The device coupon comprises: an input waveguide, including an input facet; an active waveguide, coupled to the input waveguide, the active waveguide including a III-V semiconductor based electro-optical device; and an output waveguide, configured to couple light between the active waveguide and an output facet. The input waveguide and output waveguide are passive waveguides.Type: ApplicationFiled: May 12, 2021Publication date: November 18, 2021Inventors: Guomin YU, Aaron John ZILKIE
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Patent number: 11150494Abstract: A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.Type: GrantFiled: August 23, 2019Date of Patent: October 19, 2021Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Aaron L. Birkbeck, Jeffrey Driscoll, Haydn Frederick Jones, Damiana Lerose, Amit Singh Nagra, David Arlo Nelson, Dong Yoon Oh, Pradeep Srinivasan, Aaron John Zilkie
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Publication number: 20210311335Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.Type: ApplicationFiled: June 18, 2021Publication date: October 7, 2021Inventors: James Dongyoon Oh, David Arlo Nelson, Pradeep Srinivasan, Amit Singh Nagra, Aaron John Zilkie, Jeffrey Driscoll, Aaron L. Birkbeck
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Publication number: 20210311333Abstract: A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.Type: ApplicationFiled: June 16, 2021Publication date: October 7, 2021Inventors: Abu THOMAS, Albert BENZONI, Jacob LEVY, Thomas Pierre SCHRANS, Andrea TRITA, Guomin YU, Aaron John ZILKIE
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Publication number: 20210311256Abstract: A method of fabricating a device coupon including a waveguide which is suitable for use in a micro-transfer printing process. The method comprises the steps, on a wafer, of: depositing a lower cladding layer on an uppermost surface of the wafer; providing a silicon nitride guiding layer on an uppermost surface of the lower cladding; depositing an upper cladding over at least an uppermost surface of the silicon nitride guiding layer; providing a tether over the coupon, and etching away a region of the uppermost layer of the wafer located between the lower cladding layer and a substrate of the wafer, thereby leaving the lower cladding layer, silicon nitride guiding layer, and upper cladding layer suspended above the wafer via the tether.Type: ApplicationFiled: March 16, 2021Publication date: October 7, 2021Inventors: Guomin Yu, Aaron John Zilkie
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Patent number: 11126020Abstract: A silicon based electro-optically active device and method of producing the same. The silicon based electro-optically active device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner; wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.Type: GrantFiled: May 11, 2018Date of Patent: September 21, 2021Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Yi Zhang, Aaron John Zilkie
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Publication number: 20210281051Abstract: A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.Type: ApplicationFiled: May 21, 2021Publication date: September 9, 2021Inventors: Aaron John Zilkie, Pradeep Srinivasan
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Publication number: 20210271119Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.Type: ApplicationFiled: May 14, 2019Publication date: September 2, 2021Applicant: Rockley Photonics LimitedInventors: Guomin YU, Aaron John ZILKIE
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Patent number: 11099454Abstract: A method of operating an optical modulator. The optical modulator having: a rib waveguide which includes a junction which is either a PIN or PN junction, the junction having a breakdown voltage. The method comprising: applying a reverse bias to the junction, so as to operate the optical modulator around the breakdown voltage of the junction; operating the modulator in an avalanche multiplication and/or band-to-band tunnelling mode by increasing the reverse bias past the breakdown voltage.Type: GrantFiled: March 22, 2018Date of Patent: August 24, 2021Assignees: Rockley Photonics Limited, University of SouthamptonInventors: Guomin Yu, Aaron John Zilkie, Yi Zhang, David John Thomson
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Publication number: 20210234058Abstract: A silicon based photodetector and method of manufacturing the same. The photodetector comprising: a silicon substrate (201); a buried oxide layer (202), above the silicon substrate; and a waveguide (203), above the buried oxide layer. The waveguide (203) includes a silicon, Si, containing region and a germanium tin, GeSn, containing region (209), both located between a first doped region (206) and a second doped region (207) of the waveguide (203), thereby forming a PIN diode. The first doped region (206) and the second doped region (207) are respectively connected to first and second electrodes (210a, 210b), such that the waveguide (203) is operable as a photodetector.Type: ApplicationFiled: May 29, 2019Publication date: July 29, 2021Inventors: Yi ZHANG, Hooman ABEDIASL, Aaron John ZILKIE
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Patent number: 11054674Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.Type: GrantFiled: April 24, 2019Date of Patent: July 6, 2021Assignee: Rockley Photonics LimitedInventors: Dong Yoon Oh, David Arlo Nelson, Pradeep Srinivasan, Amit Singh Nagra, Aaron John Zilkie, Jeffrey Driscoll, Aaron L. Birkbeck