Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: A method of generating oxygen including applying a potential of greater than 0 to 2.0 V to an electrochemical cell that is at least partially submerged in an aqueous solution such that on applying the potential the aqueous solution is oxidized thereby forming oxygen. The electrochemical cell includes an electrocatalyst and a counter electrode. The electrocatalyst includes a nickel foam substrate and a layer of particles of manganese oxide having a formula of MnxOy on a surface of the nickel foam substrate, where x is an integer from 1 to 7, and where y is an integer from 1 to 13. The particles of MnO have a spherical shape with an average diameter of 5-15 nanometers (nm) and are aggregated with an average aggregate size of 500-1,000 nm in the shape of a cauliflower.

Abstract: A method of generating oxygen including applying a potential of greater than 0 to 2.0V to an electrochemical cell, where the electrochemical cell is at least partially submerged in an aqueous solution, and where on applying the potential the aqueous solution is oxidized thereby forming oxygen. The electrochemical cell includes an electrocatalyst; and a counter electrode. The electrocatalyst includes a nickel foam substrate; and a layer of particles of FeNiOx on a surface of the nickel foam substrate, wherein x=3-4. The particles of FeNiOx have a nanorod shape with an average diameter of 100-500 nanometers (nm) and a length longer than 500 nm. The terminal end of the nanorod shape has a cap with a hemispherical shape having a diameter larger than the average diameter of the nanorod shape.

Abstract: In some examples, an integrated circuit includes an isolation layer disposed on or over a semiconductor substrate. The integrated circuit also includes a first conductive plate located over the isolation layer and a composite dielectric layer located over the first conductive plate. The composite dielectric layer includes a first sublayer comprising a first chemical composition; a second sublayer comprising a second different chemical composition; and a third sublayer comprising a third chemical composition substantially similar to the first chemical composition. The integrated circuit further includes a second conductive plate located directly on the composite dielectric layer above the first conductive plate.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: In some aspects, the techniques described herein relate to a method including: providing, on a peer-to-peer distributed network, an aggregation server; implementing, at a first node of the peer-to-peer distributed network, a machine learning (ML) model, wherein the ML model is trained on a first private data set; sending the ML model to the aggregation server; replicating the ML model to a second node of the peer-to-peer distributed network, wherein the ML model is retrained on a second private data set to generate a retrained model; sending the retrained model to the aggregation server; aggregating the ML model and the retrained model to generate an aggregated model; and replicating the aggregated model to the first node of the peer-to-peer distributed network, wherein the ML model is promoted to a production model at the first node of the peer-to-peer distributed network.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: A vanadium oxide-based electrode for electrochemical water splitting that includes a metallic substrate and a layer of particles of a vanadium oxide composite at least partially covering a surface of the metallic substrate. The particles of the vanadium oxide composite are in the form of nanobeads having an average particle size of 50 to 400 nm. A method of making the electrode.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: Forming an integrated circuit by first, forming a first fin and a second fin from a semiconductor layer, with an area between the first fin and the second fin, second, forming a dielectric layer covering at least a portion of the first fin, at least a portion of the second fin, and at least a portion of the area, and third, forming amorphous polysilicon covering a least a portion of the dielectric layer.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: The disclosure relates to compounds of Formula I, methods of making same, pharmaceutical compositions including same, and methods of treating pain and neurological disorders using same: wherein R1 is hydrogen, halogen, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, aryl, nitro, or cyano; wherein R2 and R3 are independently hydrogen, halogen, aryl, or substituted or unsubstituted alkyl, or wherein R2 and R3 are connected to form an alkyl chain; wherein R4 is a substituted or unsubstituted aryl or heteroaryl group having from 5 to 10 members; wherein X is O, S, N, NH, CH, CH2, or CO; wherein n is from 0 to 10; and wherein the bond indicated by * is a double bond or a single bond based on a valence of X. The compounds selectively bind to CB2, can penetrate the blood brain barrier, and have a half-life of 20 hours or greater.

Abstract: A method of forming an integrated circuit includes forming a plurality of openings in a resist layer over a semiconductor substrate and removing portions of a semiconductor surface layer exposed by the openings, thereby forming a plurality of deep trenches. Removing the portions includes performing a first etch loop for a first plurality of repetitions, the first etch loop including a deposition process executed for a first deposition time and an etch process executed for a first etch time. The removing further includes performing a second etch loop for a second plurality of repetitions, the second etch loop including the deposition process executed for a second deposition time and an etch process executed for a second etch time. The second deposition time is at least 10% greater than the first deposition time, and the second etch time is at least 10% greater than the first etch time.

Abstract: A method of fabricating an integrated circuit includes forming a first opening having a first width and a second opening having a second width in a first dielectric layer over a silicon substrate. The openings expose the silicon substrate and the exposed silicon substrate is oxidized to form first and second LOCOS structures having a first thickness. A polysilicon layer is formed over the silicon substrate, so that the polysilicon layer fills the first and second openings. A blanket etch of the polysilicon layer is performed to remove at least a portion of the polysilicon layer over the second LOCOS structure while leaving the first LOCOS structure protected by the polysilicon layer. The silicon substrate under the second LOCOS structure is further oxidized such that the second LOCOS structure has a second thickness greater than the first thickness.

Abstract: Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.

Abstract: Systems and methods are disclosed for monitoring power usage and temperature within a data storage device, and adjusting performance based on the power usage and temperature. In certain embodiments, an apparatus may comprise a data storage device (DSD) having an interface to communicate with a host device, and a circuit. The circuit may be configured to receive a first limit designation for a first operating parameter of the DSD via the interface, monitor a value of the first operating parameter of the DSD, evaluate a pending workload of operations to be performed by the DSD, estimate a future value of the first operating parameter based on the pending workload, and adjust performance of the DSD based on the future value and the first limit designation.

Abstract: A method of fabricating an integrated circuit includes forming a first opening having a first width and a second opening having a second width in a first dielectric layer over a silicon substrate. The openings expose the silicon substrate and the exposed silicon substrate is oxidized to form first and second LOCOS structures having a first thickness. A polysilicon layer is formed over the silicon substrate, so that the polysilicon layer fills the first and second openings. A blanket etch of the polysilicon layer is performed to remove at least a portion of the polysilicon layer over the second LOCOS structure while leaving the first LOCOS structure protected by the polysilicon layer. The silicon substrate under the second LOCOS structure is further oxidized such that the second LOCOS structure has a second thickness greater than the first thickness.