Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: A CoVOx composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 ?m thick layer of CoVOx having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVOx composite electrode is capable of being used in an electrochemical cell for water oxidation.

Abstract: A method of fabricating an integrated circuit (IC) includes forming a dielectric layer on a substrate having a plurality of the IC. A thin-film resistor (TFR) layer is deposited on the dielectric layer, and an underlayer (UL) including carbon is formed on the TFR layer. A hard mask layer including silicon is formed on the UL. Masked etching of the hard mask layer transfers a pattern of a photoresist layer onto the hard mask layer to form a hard mask layer pattern. Masked etching of the UL transfers the hard mask layer pattern onto the UL to form a UL pattern. Masked etching of the TFR layer transfers the UL pattern onto the TFR layer to form a TFR layer pattern including a matched pair of TFRs. The matched pair of TFRs are generally included in circuitry configured together for implementing at least one function.

Abstract: A method of making a nanostructured palladium thin film electrode is described. The method involves contacting a substrate with an aerosol comprising a solvent and a Pd(II) compound. The substrate is heated, and no hydrogen gas or an additional reducing agent is required to reduce the Pd(II) to form the deposited thin film. The nanostructured palladium thin film electrode is capable of detecting compounds such as hydrazine in an aqueous sample with a 10 nM limit of detection.

Abstract: A method of making a nanostructured palladium thin film electrode is described. The method involves contacting a substrate with an aerosol comprising a solvent and a Pd(II) compound. The substrate is heated, and no hydrogen gas or an additional reducing agent is required to reduce the Pd(II) to form the deposited thin film. The nanostructured palladium thin film electrode is capable of detecting compounds such as hydrazine in an aqueous sample with a 10 nM limit of detection.

Abstract: A method of forming an alkali metal-doped calcium-SiAlON material is provided. The method includes mixing calcium-SiAlON powder and an alkali metal hydroxide to form a reaction mixture. The mixture further includes spark plasma sintering (SPS) the reaction mixture at 800 to 940 degrees Celsius (° C.) to form the alkali metal-doped calcium-SiAlON material. The alkali metal hydroxide is present in an amount of 0.1 to 10 weight percentage (wt. %), based on a total weight of the reaction mixture.

Abstract: A method of making a ?-SiAlON is described in involves mixing nanoparticles of AlN, Al2O3, and SiO2 with particles of Si3N4 and spark plasma sintering the mixture. The sintering may be at a temperature of 1450-1600° C. or about 1500° C. The particles of Si3N4 may be nanoparticles comprising amorphous Si3N4, or 25-55 ?m diameter microparticles comprising ?-Si3N4.

Abstract: A method for making ceramic composites via sintering a mixture of alumina and oil fly ash. The alumina is in the form of nanoparticles and/or microparticles. The oil fly ash may be treated with an acid prior to the sintering. The composite may comprise graphite carbon derived from oil fly ash dispersed in an alumina matrix. The density, mechanical performance (e.g. Vickers hardness, fracture toughness), and thermal properties (e.g. thermal expansion, thermal conductivity) of the ceramic composites prepared by the method are also specified.

Abstract: A method including obtaining x-ray data for a multi-component object; processing the x-ray data to obtain at least first and second 3D representations of the object with respective first and second resolutions, the first resolution being higher than the second resolution; identifying a plurality of regions of the second 3D representation, each region corresponding to one of a number of components of the object, by at least identifying a number of initial regions of the second 3D representation, each initial region having pixel values in one of a plurality of ranges of pixel values, and adjusting each of the number of initial regions based on a comparison between the initial region and features derived from 2D sections of the object from the first 3D representation; and obtaining a 3D model.

Abstract: A method of making a nanostructured palladium thin film electrode is described. The method involves contacting a substrate with an aerosol comprising a solvent and a Pd(II) compound. The substrate is heated, and no hydrogen gas or an additional reducing agent is required to reduce the Pd(II) to form the deposited thin film. The nanostructured palladium thin film electrode is capable of detecting compounds such as hydrazine in an aqueous sample with a 10 nM limit of detection.

Abstract: A thin film electrode involving a nanostructured catalytic material deposited onto a surface of a conducting substrate and method of making is described. The nanostructured catalytic material contains cobalt oxide nanoflowers having a central core and nanopetals extending from the central core. The method of making the thin film electrode involves contacting the conducting substrate with an aerosol containing a cobalt complex and a solvent. A method of using the thin film electrode in an electrochemical cell for water splitting is also provided.

Abstract: A method of fabricating an integrated circuit includes forming and patterning a hardmask over a substrate such that the patterned hardmask exposes regions of the substrate. The exposed regions are etched, thereby forming trenches and a semiconductor fin between the trenches. Prior to removing the hardmask, a photoresist layer is formed and patterned, thereby exposing a section of the semiconductor fin. A dopant is implanted into the exposed section through the hardmask.

Abstract: An integrated circuit (IC) includes a second metal level located between first and third metal levels, a dielectric layer located over the metal levels, and first, second and third vias within the dielectric layer. The first via traverses the first dielectric layer from a surface of the dielectric layer to the first metal level and has a first diameter. The second via traverses the dielectric layer from the surface to the second metal level and has the first diameter. The third via traverses the dielectric layer from the surface to the third metal level and has a second diameter greater than the first diameter. In some implementations the first, second and third metal levels implement a capacitor.

Abstract: A semiconductor device with an isolation structure and a trench capacitor, each formed using a single resist mask for etching corresponding first and second trenches of different widths and different depths, with dielectric liners formed on the trench sidewalls and polysilicon filling the trenches and deep doped regions surrounding the trenches, including conductive features of a metallization structure that connect the polysilicon of the isolation structure trench to the deep doped region to form an isolation structure.

Abstract: Systems and methods are disclosed for monitoring power usage and temperature within a data storage device, and adjusting performance based on the power usage and temperature. In certain embodiments, an apparatus may comprise a data storage device (DSD) having an interface to communicate with a host device, and a circuit. The circuit may be configured to receive a first limit designation for a first operating parameter of the DSD via the interface, monitor a value of the first operating parameter of the DSD, evaluate a pending workload of operations to be performed by the DSD, estimate a future value of the first operating parameter based on the pending workload, and adjust performance of the DSD based on the future value and the first limit designation.

Abstract: A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.

Abstract: A method for forming trench capacitors includes forming a silicon nitride layer over a first region of a semiconductor surface doped a first type and over a second region doped a second type. A patterned photoresist layer is directly formed on the silicon nitride layer. An etch forms a plurality of deep trenches (DTs) within the first region. A liner oxide is formed that lines the DTs. The silicon nitride layer is etched forming an opening through the silicon nitride layer that is at least as large in area as the area of an opening in the semiconductor surface of the DT below the silicon nitride layer. The liner oxide is removed, a dielectric layer(s) on a surface of the DTs is formed, a top plate material layer is deposited to fill the DTs, and the top plate material layer is removed beyond the DT to form a top plate.

Abstract: A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.

Abstract: Systems and methods are disclosed for monitoring power usage and temperature within a data storage device, and adjusting performance based on the power usage and temperature. In certain embodiments, an apparatus may comprise a data storage device (DSD) having an interface to communicate with a host device, and a circuit. The circuit may be configured to receive a first limit designation for a first operating parameter of the DSD via the interface, monitor a value of the first operating parameter of the DSD, evaluate a pending workload of operations to be performed by the DSD, estimate a future value of the first operating parameter based on the pending workload, and adjust performance of the DSD based on the future value and the first limit designation.

Abstract: Natural products were screened for their insect repellent activity, and carrot seed essential oil gave very high activity in biting repellent/deterrent bioassays. Analysis of the oil revealed the presence of 47 compounds, mainly mono- and sesqui-terpenes. The sesquiterpene, carotol, constituted more than 75% w/w of the oil. In the initial screening, the essential oil gave high biting deterrent activity and high repellent activity comparable to DEET against both Aedes aegypti and Anophies quadrimaculatus species of mosquitoes. The active fraction mainly comprises pure carotol. The essential oil and the pure compound have a potential to be developed and used as effective repellent against mosquitoes.