Abstract: A method for promoting the supported catalysts using noble metal nanoparticles. Different noble metal precursors are preferentially deposited onto the supported metal catalysts through Chemical vapor deposition (CVD), and compositions so produced. Further, the promoted catalyst is used for CO and CO2 hydrogenation reactions, increasing the reaction conversion, C5+ compounds selectivity and chain growth probability. The active phase of catalyst can be either cobalt oxide, nickel oxide or their reduced format (Co0 or Ni0), and the noble metal is preferably Ruthenium.

Abstract: Disclosed is an apparatus and method for selecting and providing media content on a social network service (SNS), and the apparatus includes a media content search unit configured to search, from a SNS server which contains media content composed of images or text, for media content related to a user accessing the SNS server, a media content processing unit configured to determine at least one piece of media content among the retrieved media content as candidate media content by analyzing an image, text, or metadata of the retrieved media content, and a service providing unit configured to provide the determined candidate media content to the user.

Abstract: A semiconductor device with a deep trench has a dielectric liner formed on sidewalls and a bottom of the deep trench. A pre-etch deposition step of a two-step process forms a protective polymer on an existing top surface of the semiconductor device, and on the dielectric liner proximate to a top surface of the substrate. The pre-etch deposition step does not remove a significant amount of the dielectric liner from the bottom of the deep trench. A main etch step of the two-step process removes the dielectric liner at the bottom of the deep trench while maintaining the protective polymer at the top of the deep trench. The protective polymer is subsequently removed.

Abstract: An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.

Abstract: A semiconductor device with a deep trench has a dielectric liner formed on sidewalls and a bottom of the deep trench. A pre-etch deposition step of a two-step process forms a protective polymer on an existing top surface of the semiconductor device, and on the dielectric liner proximate to a top surface of the substrate. The pre-etch deposition step does not remove a significant amount of the dielectric liner from the bottom of the deep trench. A main etch step of the two-step process removes the dielectric liner at the bottom of the deep trench while maintaining the protective polymer at the top of the deep trench. The protective polymer is subsequently removed.

Abstract: An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.

Abstract: A semiconductor device with a deep trench has a dielectric liner formed on sidewalls and a bottom of the deep trench. A pre-etch deposition step of a two-step process forms a protective polymer on an existing top surface of the semiconductor device, and on the dielectric liner proximate to a top surface of the substrate. The pre-etch deposition step does not remove a significant amount of the dielectric liner from the bottom of the deep trench. A main etch step of the two-step process removes the dielectric liner at the bottom of the deep trench while maintaining the protective polymer at the top of the deep trench. The protective polymer is subsequently removed.

Abstract: A semiconductor device with a buried layer has a deep trench structure abutting the buried layer and a self-aligned sinker along sidewalls of the deep trench structure. The semiconductor device may be formed by forming a portion of a deep trench down to the buried layer, and implanting dopants into a substrate of the semiconductor device along sidewalls of the deep trench, and subsequently forming a remainder of the deep trench extending below the buried layer. Alternatively, the semiconductor device may be formed by forming the deep trench to extend below the buried layer, and subsequently implanting dopants into the substrate of the semiconductor device along sidewalls of the deep trench.

Abstract: A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the deep trench. A contact opening is formed through the dielectric liner at the bottom of the deep trench to expose the substrate, leaving the dielectric liner on the sidewalls. Electrically conductive material is formed in the deep trench to provide the very high aspect ratio contact to the substrate through the contact opening.

Abstract: A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the deep trench. A contact opening is formed through the dielectric liner at the bottom of the deep trench to expose the substrate, leaving the dielectric liner on the sidewalls. Electrically conductive material is formed in the deep trench to provide the very high aspect ratio contact to the substrate through the contact opening.

Abstract: A dispenser and vial system is disclosed. At least one vial is loaded into a dispenser to automatically dispense dosages of medication made up of units of medication. The vial stores and releases the units of medication. The dispenser has a delivery mechanism configured to dispense a plurality of units of medication (from one or more vials) to make up a dosage of medication, and trigger or actuate the release of the plurality of units of medication based on information on the at least one vial readable by the dispenser to validate the at least one vial prior to the trigger or actuation by a link between, the dosage of medication, a user or patient and the at least one vial.

Abstract: A reactive ion etching (RIE) process comprising a chlorine source gas and an oxygen source gas with an atomic ratio of chlorine to oxygen in the plasma of at least 6 to 1 is used to etch chromium alloy films such as SiCr, SiCrC, SiCrO, SiCrCO, SiCrCN, SiCrON, SiCrCON, CrO, CrN, CrON, and NiCr for example. Additionally, a fluorine source may be added to the etch chemistry.

Abstract: A system, method, and article of manufacture for generating a digital pass is disclosed. The method may comprise retrieving a plurality of identity attributes, and grouping a subset of identity attributes in the plurality of identity attributes to generate at least one digital pass. The method may further comprise grouping a subset of static identity attributes and a subset of dynamic identity attributes to generate a digital pass.

Abstract: A method of etching a ferroelectric capacitor stack structure including conductive upper and lower plates with a ferroelectric material, such as lead-zirconium-titanate (PZT), therebetween, with each of these layers defined by the same hard mask element. The stack etch process involves a plasma etch with a fluorine-bearing species as an active species in the etch of the conductive plates, and a non-fluorine-bearing chemistry for etching the PZT ferroelectric material. An example of the fluorine-bearing species is CF4. Endpoint detection can be used to detect the point at which the upper plate etch reaches the PZT, at which point the gases in the chamber are purged to avoid etching the PZT material with fluorine. A steeper sidewall angle for the capacitor structure can be obtained.

Abstract: Disclosed is an apparatus and method for selecting and providing media content on a social network service (SNS), and the apparatus includes a media content search unit configured to search, from a SNS server which contains media content composed of images or text, for media content related to a user accessing the SNS server, a media content processing unit configured to determine at least one piece of media content among the retrieved media content as candidate media content by analyzing an image, text, or metadata of the retrieved media content, and a service providing unit configured to provide the determined candidate media content to the user.

Abstract: An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.

Abstract: A system, method, and article of manufacture for generating a digital pass is disclosed. The method may comprise retrieving a plurality of identity attributes, and grouping a subset of identity attributes in the plurality of identity attributes to generate at least one digital pass. The method may further comprise grouping a subset of static identity attributes and a subset of dynamic identity attributes to generate a digital pass.

Abstract: A system, method, and article of manufacture for generating a digital pass is disclosed. The method may comprise retrieving a plurality of identity attributes, and grouping a subset of identity attributes in the plurality of identity attributes to generate at least one digital pass. The method may further comprise grouping a subset of static identity attributes and a subset of dynamic identity attributes to generate a digital pass.

Abstract: A method for promoting the supported catalysts using noble metal nanoparticles. Different noble metal precursors are preferentially deposited onto the supported metal catalysts through Chemical vapor deposition (CVD), and compositions so produced. Further, the promoted catalyst is used for CO and CO2 hydrogenation reactions, increasing the reaction conversion, C5+ compounds selectivity and chain growth probability. The active phase of catalyst can be either cobalt oxide, nickel oxide or their reduced format (Co0 or Ni0), and the noble metal is preferably Ruthenium.

Abstract: A method of etching a ferroelectric capacitor stack structure including conductive upper and lower plates with a ferroelectric material, such as lead-zirconium-titanate (PZT), therebetween, with each of these layers defined by the same hard mask element. The stack etch process involves a plasma etch with a fluorine-bearing species as an active species in the etch of the conductive plates, and a non-fluorine-bearing chemistry for etching the PZT ferroelectric material. An example of the fluorine-bearing species is CF4. Endpoint detection can be used to detect the point at which the upper plate etch reaches the PZT, at which point the gases in the chamber are purged to avoid etching the PZT material with fluorine. A steeper sidewall angle for the capacitor structure can be obtained.