Patents by Inventor Abdellatif Bellaouar

Abdellatif Bellaouar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11114736
    Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: September 7, 2021
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See Taur Lee, Sher Jiung Fang, Abdellatif Bellaouar
  • Publication number: 20210194125
    Abstract: Disclosed are embodiments of a transceiver front-end configured for a reduced noise figure (NF). Each of the embodiments includes an antenna, a transmitter branch and a receiver branch all connected to an input/output pad. The transmitter branch is coupled to the input/output pad (and thereby the antenna) by an impedance transformer. Only the receiver branch is selectively electrically connected to the input/output pad (and thereby the antenna) by a switch. A common matching network between the input/output pad and the switch provides both impedance matching and electrostatic discharge protection for the switch and the low noise amplifier, thereby reducing NF. Specific embodiments are disclosed for integration into specific technologies (e.g., fully depleted silicon-on-insulator (FDSOI) technology and fin-type field effect transistor (finFET) technology).
    Type: Application
    Filed: December 19, 2019
    Publication date: June 24, 2021
    Applicant: GLOBALFOUNDRIES U.S. Inc.
    Inventor: Abdellatif Bellaouar
  • Patent number: 10944437
    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ? the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ? the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ? the first frequency or about ? the second frequency during the duty cycle.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: March 9, 2021
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Abdellatif Bellaouar, Sher Jiun Fang, Frank Zhang
  • Patent number: 10942255
    Abstract: The disclosure provides an apparatus including: a pair of signal injection transistors each having a gate terminal coupled to a differential reference signal, and a pair of cross-coupled amplifier transistors configured to amplify a voltage of the differential reference signal to yield a voltage-amplified reference signal at a local oscillator (LO) port of a mixer; an electronic oscillator having an oscillation output node coupled to the LO port of the mixer in parallel with the injection-locked buffer, and configured to generate an oscillator output for transmission to the output node based on a back gate bias voltage applied to the electronic oscillator; and an access transistor having a gate coupled to a switching node, and a back gate terminal coupled to the back gate bias voltage, wherein the access transistor is configured to enable or disable current flow through the electronic oscillator in parallel with the injection-locked buffer.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: March 9, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Arul Balasubramaniyan, Abdellatif Bellaouar
  • Patent number: 10924058
    Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: February 16, 2021
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Arul Balasubramaniyan
  • Publication number: 20200313269
    Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.
    Type: Application
    Filed: March 31, 2020
    Publication date: October 1, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: See Taur Lee, Sher Jiung Fang, Abdellatif Bellaouar
  • Patent number: 10790789
    Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: September 29, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See T. Lee, Abdellatif Bellaouar
  • Patent number: 10749473
    Abstract: An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in ?phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: August 18, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Arul Balasubramaniyan
  • Publication number: 20200228149
    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ? the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ? the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ? the first frequency or about ? the second frequency during the duty cycle.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Sher Jiun Fang, Frank Zhang
  • Publication number: 20200195195
    Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.
    Type: Application
    Filed: February 26, 2020
    Publication date: June 18, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Arul Balasubramaniyan
  • Patent number: 10680557
    Abstract: An apparatus, comprising an input transformer; a first differential transistor pair configured to receive a first back gate bias voltage; a second differential transistor pair configured to receive a second back gate bias voltage; a cross-coupled neutralization cap comprising PMOS or NMOS transistors and configured to receive a third back gate bias voltage; and an output transformer. A method of fixing at least one back gate bias voltage to impart a desired capacitance to the transistors of at least one of the first differential transistor pair, the second differential transistor pair, or the neutralization cap. The apparatus and method may provide a power amplifier having improved linearity and efficiency.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: June 9, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Shafiullah Syed, Abdellatif Bellaouar, Chi Zhang
  • Patent number: 10644374
    Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: May 5, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See Taur Lee, Sher Jiung Fang, Abdellatif Bellaouar
  • Publication number: 20200116823
    Abstract: The disclosure provides an apparatus including: a pair of signal injection transistors each having a gate terminal coupled to a differential reference signal, and a pair of cross-coupled amplifier transistors configured to amplify a voltage of the differential reference signal to yield a voltage-amplified reference signal at a local oscillator (LO) port of a mixer; an electronic oscillator having an oscillation output node coupled to the LO port of the mixer in parallel with the injection-locked buffer, and configured to generate an oscillator output for transmission to the output node based on a back gate bias voltage applied to the electronic oscillator; and an access transistor having a gate coupled to a switching node, and a back gate terminal coupled to the back gate bias voltage, wherein the access transistor is configured to enable or disable current flow through the electronic oscillator in parallel with the injection-locked buffer.
    Type: Application
    Filed: October 11, 2018
    Publication date: April 16, 2020
    Inventors: Arul Balasubramaniyan, Abdellatif Bellaouar
  • Patent number: 10608582
    Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: March 31, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Arul Balasubramaniyan
  • Publication number: 20200028499
    Abstract: An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in ?phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.
    Type: Application
    Filed: April 30, 2018
    Publication date: January 23, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Arul Balasubramaniyan
  • Publication number: 20190379338
    Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
    Type: Application
    Filed: August 26, 2019
    Publication date: December 12, 2019
    Inventors: See T. Lee, Abdellatif Bellaouar
  • Patent number: 10483917
    Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: November 19, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See Taur Lee, Abdellatif Bellaouar
  • Patent number: 10469039
    Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: November 5, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See T. Lee, Abdellatif Bellaouar
  • Publication number: 20190312603
    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ? the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ? the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ? the first frequency or about ? the second frequency during the duty cycle.
    Type: Application
    Filed: April 30, 2018
    Publication date: October 10, 2019
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Abdellatif Bellaouar, Sher Jiun Fang, Frank Zhang
  • Patent number: 10432179
    Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: October 1, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: See Taur Lee, Abdellatif Bellaouar