Patents by Inventor Abdul Aziz KHAJA

Abdul Aziz KHAJA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220310360
    Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Saket Rathi, Tuan A. Nguyen, Amit Bansal, Yuxing Zhang, Badri N. Ramamurthi, Nitin Pathak, Abdul Aziz Khaja, Sarah Michelle Bobek
  • Publication number: 20220165567
    Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen and a stem. The systems may include a baffle extending about a stem of the substrate support. The baffle may define one or more apertures through the baffle. The systems may include a fluid source fluidly coupled with the chamber body at an access between the stem of the substrate support and the baffle.
    Type: Application
    Filed: November 25, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Anjana M. Patel
  • Publication number: 20220127722
    Abstract: Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jiheng Zhao, Abdul Aziz Khaja, Prashant Kumar Kulshreshtha, Fang Ruan
  • Publication number: 20220130665
    Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Michael Wenyoung Tsiang, Abdul Aziz Khaja, Li-Qun Xia, Kevin Hsiao, Liangfa Hu, Yayun Cheng
  • Publication number: 20220122823
    Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.
    Type: Application
    Filed: October 15, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Fei Wu, Abdul Aziz Khaja, Sungwon Ha, Ganesh Balasubramanian, Vinay Prabhakar
  • Patent number: 11299805
    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Ren-Guan Duan, Amit Kumar Bansal, Jianhua Zhou, Juan Carlos Rocha-Alvarez
  • Publication number: 20220098728
    Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 31, 2022
    Inventors: Sarah Michelle BOBEK, Abdul Aziz Khaja, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee
  • Publication number: 20220098729
    Abstract: The present disclosure relates to a method for cleaning one or more chamber components having contaminants. The method includes introducing a gas mixture to a remote plasma source, the gas mixture includes argon, an oxygen-containing gas and a nitrogen-containing gas. The argon to oxygen gas ratio in the gas mixture is about 0.2:1 to about 1:1 by volume. A plasma is formed from the gas mixture in the remote plasma source. The plasma includes oxygen radicals, argon radicals, and nitrogen radicals. The plasma is introduced to a process volume of the process chamber and exposes surfaces of one or more chamber components. The process volume of the process chamber has a pressure of about 10 mTorr to about 6 Torr and a temperature above 300° C.
    Type: Application
    Filed: September 28, 2020
    Publication date: March 31, 2022
    Inventors: Fei WU, Abdul Aziz KHAJA, Amit Kumar BANSAL, Tuan Anh (Mike) NGUYEN, Qian SUI
  • Patent number: 11133212
    Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: September 28, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abdul Aziz Khaja, Jun Ma, Hyung Je Woo, Fei Wu, Jian Li
  • Publication number: 20210287924
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assembly may include a ceramic material characterized by a grain size of less than or about 5 ?m.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Paul L. Brillhart, Juan Carlos Rocha-Alvarez, Abdul Aziz Khaja, Vinay K. Prabhakar, Kwangduk Douglas Lee, Chidambara A. Ramalingam, Venkata Sharat Chandra Parimi
  • Publication number: 20210143005
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Application
    Filed: December 17, 2020
    Publication date: May 13, 2021
    Inventors: Tuan Anh NGUYEN, Jeongmin LEE, Anjana M. PATEL, Abdul Aziz KHAJA
  • Publication number: 20210111000
    Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.
    Type: Application
    Filed: November 30, 2020
    Publication date: April 15, 2021
    Inventors: Zheng John Ye, Abdul Aziz Khaja, Amit Kumar Bansal, Kwangduk Douglas Lee, Xing Lin, Jianhua Zhou, Addepalli Sai Susmita, Juan Carlos Rocha-Alvarez
  • Patent number: 10971390
    Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Liangfa Hu, Sudha S. Rathi, Ganesh Balasubramanian
  • Patent number: 10930475
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Abdul Aziz Khaja, Zheng John Ye, Amit Kumar Bansal
  • Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Patent number: 10916407
    Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: February 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Mohamad Ayoub, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez
  • Patent number: 10903066
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 26, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Tuan Anh Nguyen, Jeongmin Lee, Anjana M. Patel, Abdul Aziz Khaja
  • Patent number: 10879041
    Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Abdul Aziz Khaja, Amit Kumar Bansal, Kwangduk Douglas Lee, Xing Lin, Jianhua Zhou, Addepalli Sai Susmita, Juan Carlos Rocha-Alvarez
  • Publication number: 20200365370
    Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.
    Type: Application
    Filed: April 23, 2020
    Publication date: November 19, 2020
    Inventors: Fei WU, Abdul Aziz KHAJA, Sungwon HA, Vinay K. PRABHAKAR, Ganesh BALASUBRAMANIAN
  • Publication number: 20200365441
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.
    Type: Application
    Filed: April 22, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Abdul Aziz KHAJA, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Yoichi SUZUKI