Patents by Inventor Abhishek Ghosh
Abhishek Ghosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220173725Abstract: A True Single-Phase Clock (TSPC) NAND-based reset flip-flop includes a reset functionality to perform a reset operation. The flip-flop with the reset functionality includes a master section and a slave section. The reset functionality is achieved using two transistors in the master section. The master section and the slave section operate using the TSPC. The master section and the slave section may include a plurality of NAND circuits and a NAND and NOR circuit for performing the reset operation. The master section outputs a plurality of internal signals on receiving a data input, a scan enable signal, a scan input signal, a reset control signal, and a clock signal. The slave section generates an output on receiving the plurality of internal signals received from the master section.Type: ApplicationFiled: March 1, 2021Publication date: June 2, 2022Inventors: AROMA BHAT, Arani Roy, Mitesh Goyal, Abhishek Ghosh
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Patent number: 11347569Abstract: The disclosed technology is generally directed to a Resource Planning system. In one example of the technology, at a first site, a plurality of messages is received from a second site. The messages of the plurality of messages are associated with events. The events include dependencies that are associated with the events. The first site is not the second site. The events are associated with at least one of updating data or updating perpetual cost calculations. Messages of the plurality of messages having a first dependency level are determined based on the dependencies. The messages determined to have the first dependency level are processed. Messages of the plurality of messages having a second dependency level based on the dependencies are determined. The messages determined to have the second dependency level are processed after processing the messages determined to have the first dependency level.Type: GrantFiled: January 5, 2021Date of Patent: May 31, 2022Assignee: Microsoft Technology Licensing, LLCInventors: Bo Kampmann, Abhishek Ghosh, Gaurav Roy, Lennart Conrad, Andrew James Stach, Alexandros Kalomoiros
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Publication number: 20220107853Abstract: The disclosed technology is generally directed to a Resource Planning system. In one example of the technology, at a first site, a plurality of messages is received from a second site. The messages of the plurality of messages are associated with events. The events include dependencies that are associated with the events. The first site is not the second site. The events are associated with at least one of updating data or updating perpetual cost calculations. Messages of the plurality of messages having a first dependency level are determined based on the dependencies. The messages determined to have the first dependency level are processed. Messages of the plurality of messages having a second dependency level based on the dependencies are determined. The messages determined to have the second dependency level are processed after processing the messages determined to have the first dependency level.Type: ApplicationFiled: January 5, 2021Publication date: April 7, 2022Inventors: Bo KAMPMANN, Abhishek GHOSH, Gaurav ROY, Lennart CONRAD, Andrew James STACH, Alexandros KALOMOIROS
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Patent number: 11271011Abstract: Inventive concepts describe a method for high performance standard cell design techniques in FinFET based library using LLE. Inventive concepts describe a fabrication process using a standard FinFET cell layout having double diffusion breaks (DDBs) and single diffusion breaks (SDBs). According to one example embodiment, the method comprises of removing one or more fingers of a P-type FinFet (PFET) from a standard FinFET cell layout. After removing the one or more fingers, a Half-Double Diffusion Break (Half-DDB) is introduced on a N-type FinFET (NFET) side inside a cell boundary using a cut-poly layer. The cut-poly layer not only isolates the PFET and NFET gates and also becomes an integral part of hybrid structure. Further, the removed one or more fingers of PFET gates are converted to two floating PFET gates by shorting a drain terminal and a source terminal of the PFET gate to a common power net.Type: GrantFiled: July 9, 2020Date of Patent: March 8, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Shyam Agarwal, Abhishek Ghosh, Parvinder Kumar Rana
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Patent number: 11152942Abstract: A CMOS transistor circuit including: a first block generating a first output signal of a NOR state, in response to first and second input signals; a second block including a first AND-OR gate, the second block generating a second output signal of an OR or an AND state, the second block receiving the first and second input signals and the first output signal; a third block generating a third output signal of the NOR state, in response to a third input signal and the second output signal; a fourth block including a second AND-OR gate, the fourth block generating a fourth output signal of the OR or the AND state in response to the third input signal, the second output signal and the third output signal; and a fifth block including an inverter gate, the fifth block generating a fifth output signal in response to the fourth output signal.Type: GrantFiled: March 3, 2020Date of Patent: October 19, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hareharan Nagarajan, Abhishek Ghosh, Sajal Mittal
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Publication number: 20210184660Abstract: A pre-discharging based flip-flop having a negative setup time can include a flip-flop with an inverted output QN. The flip-flop includes a master section and a slave section. The master section latches a data input or a scan input signal based on a scan enable signal, and the slave section retains a previous value of the inverted output QN when a clock signal is at a low logic level. The master section retains a previously latched value of the data input or the scan input signal and the slave section fetches the latched value of the master section and provides a new inverted output QN when the clock signal is at a high logic level. Further, the master section includes sub-sections that are operated using a negative clock signal. An output of the master section is discharged to zero for a half of a phase of the clock cycle.Type: ApplicationFiled: December 10, 2020Publication date: June 17, 2021Inventors: Aroma Bhat, Abdur Rakheeb, Arani Roy, Mitesh Goyal, Abhishek Ghosh
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Publication number: 20210173006Abstract: A True Single Phase Clock (TSPC) pre-charge based flip-flop is provided. The flip-flop includes a scan section, a master section, and a slave section. The scan section receives a scan enable signal, a scan input signal, a clock signal, and feedback data from the master section, and outputs an internal signal to the master section based on the scan enable signal, the scan input signal, the clock signal, and the feedback data. The master section is coupled to the scan section and receives the internal signal and a data input, and outputs a master feedback signal to the slave section based on the internal signal, the data input, and the feedback data. The slave section is coupled to the master section and generates an output by latching the master feedback signal received from the master section according to the clock signal. The clock signal is a True-Single-Phase-Clock (TSPC).Type: ApplicationFiled: December 10, 2020Publication date: June 10, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Arani Roy, Arava Prakash, Aroma Bhat, Mitesh Goyal, Abhishek Ghosh
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Publication number: 20210167781Abstract: A CMOS transistor circuit including: a first block generating a first output signal of a NOR state, in response to first and second input signals; a second block including a first AND-OR gate, the second block generating a second output signal of an OR or an AND state, the second block receiving the first and second input signals and the first output signal; a third block generating a third output signal of the NOR state, in response to a third input signal and the second output signal; a fourth block including a second AND-OR gate, the fourth block generating a fourth output signal of the OR or the AND state in response to the third input signal, the second output signal and the third output signal; and a fifth block including an inverter gate, the fifth block generating a fifth output signal in response to the fourth output signal.Type: ApplicationFiled: March 3, 2020Publication date: June 3, 2021Inventors: Hareharan Nagarajan, Abhishek Ghosh, Sajal Mittal
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Publication number: 20200343267Abstract: Inventive concepts describe a method for high performance standard cell design techniques in FinFET based library using LLE. Inventive concepts describe a fabrication process using a standard FinFET cell layout having double diffusion breaks (DDBs) and single diffusion breaks (SDBs). According to one example embodiment, the method comprises of removing one or more fingers of a P-type FinFet (PFET) from a standard FinFET cell layout. After removing the one or more fingers, a Half-Double Diffusion Break (Half-DDB) is introduced on a N-type FinFET (NFET) side inside a cell boundary using a cut-poly layer. The cut-poly layer not only isolates the PFET and NFET gates and also becomes an integral part of hybrid structure. Further, the removed one or more fingers of PFET gates are converted to two floating PFET gates by shorting a drain terminal and a source terminal of the PFET gate to a common power net.Type: ApplicationFiled: July 9, 2020Publication date: October 29, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Shyam AGARWAL, Abhishek GHOSH, Parvinder Kumar RANA
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Patent number: 10812055Abstract: Embodiments herein disclose a flip flop comprising at least one of a slave circuit and a retention circuit receiving an input from a master circuit. The output circuit receives an input (X1) from at least one of the slave circuit and the retention circuit. A first node and a second node in the retention circuit receive a power supply from a global power supply through transistors, when a retention is 0 in the retention circuit, so that the slave circuit retains a current state of the X1 and X2 irrespective of a clock input in the slave circuit, and the output circuit receives the stored state of the retention circuit, when a local power supply is turned ON.Type: GrantFiled: October 23, 2019Date of Patent: October 20, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sajal Mittal, Aroma Bhat, Hareharan Nagarajan, Rahul Kataria, Abhishek Ghosh
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Publication number: 20200266185Abstract: Example embodiments provide a four input multiplexer integrated circuit (MXT4) associated with an integrated circuit (IC) and a method for reducing area and power of an integrated circuit (IC) using a MXT4, the MXT4 including a complementary signal generator circuit configured to receive first and second selection signals and to generate first and second complementary selection signals based on respective ones of the first and the second selection signals; and a p-type metal oxide semiconductor (PMOS) and an n-type metal oxide semiconductor (NMOS) stack switch circuit configured to transmit at least one input signal to an output based on the first and the second selection signals and the first and the second complementary selection signals.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Sajal MITTAL, Abhishek GHOSH, Utkarsh GARG
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Patent number: 10748932Abstract: Inventive concepts describe a method for high performance standard cell design techniques in FinFET based library using LLE. Inventive concepts describe a fabrication process using a standard FinFET cell layout having double diffusion breaks (DDBs) and single diffusion breaks (SDBs). According to one example embodiment, the method comprises of removing one or more fingers of a P-type FinFet (PFET) from a standard FinFET cell layout. After removing the one or more fingers, a Half-Double Diffusion Break (Half-DDB) is introduced on a N-type FinFET (NFET) side inside a cell boundary using a cut-poly layer. The cut-poly layer not only isolates the PFET and NFET gates and also becomes an integral part of hybrid structure. Further, the removed one or more fingers of PFET gates are converted to two floating PFET gates by shorting a drain terminal and a source terminal of the PFET gate to a common power net.Type: GrantFiled: September 7, 2018Date of Patent: August 18, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Shyam Agarwal, Abhishek Ghosh, Parvinder Kumar Rana
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Patent number: 10733599Abstract: A system is configured to perform operations that include receiving an input corresponding to a transaction by a user at a merchant location and determining, based on the input, an identifier corresponding to the user. The operations also include authenticating, via an electronic network, the user with a payment provider server of a payment provider and accessing from the payment provider server based on the identifier, digital wallet information corresponding an account of the user that is maintained by the payment provider. The operations further include receiving a selection of a first digital payment instrument of one or more digital payment instruments and transmitting, via a payment network to a payment processor, payment instructions that cause the payment processor to process a payment corresponding to the transaction using first payment information associated with the first digital payment instrument.Type: GrantFiled: May 31, 2017Date of Patent: August 4, 2020Assignee: PayPal, Inc.Inventors: Abhishek Ghosh, Jan Rosen, Bharat Savani, Abhishikth Nandam, Surojit Bhaduri
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Patent number: 10727861Abstract: An analog-to-digital convertor circuit converts the output of a loop filter circuit to a digital signal. A random sequence generation circuit generates a random sequence. Adder circuitry adds the random sequence to the digital signal to generate a randomized digital signal. Noise transfer function impulse response detection circuitry processes the randomized digital signal and the random sequence to determine a noise transfer function impulse response. Loop filter configuration circuitry configures the loop filter circuit based on the noise transfer function impulse response. The random sequence generation circuit may comprises a high-pass sigma delta modulator. The noise transfer function impulse response detection circuitry may determine the noise transfer function impulse response, and the loop filter configuration circuitry may configure the loop filter based on the noise transfer function impulse response.Type: GrantFiled: June 12, 2019Date of Patent: July 28, 2020Assignee: MaxLinear, Inc.Inventors: Chandrajit Debnath, Abhishek Ghosh, Rishi Mathur, Anand Mohan Pappu
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Patent number: 10672756Abstract: Example embodiments provides a full adder integrated circuit (ADDF) for improving area and power of an integrated circuit (IC). The method includes receiving three input signals and generating three corresponding complementary output signals. Further, the method includes generating an internal signal using two complementary output signals out of the generated three corresponding complementary output signals, and one of the three input signals. Further, the method includes generating an output summation signal using a complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and a complementary internal signal of the generated internal signal. Further, the method includes generating a carry-out signal using two complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and the complementary internal signal.Type: GrantFiled: January 2, 2019Date of Patent: June 2, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Sajal Mittal, Abhishek Ghosh, Utkarsh Garg
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Patent number: 10651850Abstract: A method and a flip-flop for designing low power integrated circuits (IC's). The method includes receiving at least one of a clock signal, a data signal, and a complimentary data signal. The complimentary data signal is produced by an input data inverter present in the flip-flop. Further, the method includes generating at least one master internal signal based on the received at least one of the clock signal, the data signal, and the complimentary data signal, when the clock signal is at a low logic level. Further, the method includes generating at least one slave internal signal based on at least one of the received clock signal and the generated at least one master internal signal, when the clock signal is at a high logic level. Further, the method includes generating an output signal based on the generated at least one slave internal signal.Type: GrantFiled: March 25, 2019Date of Patent: May 12, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sajal Mittal, Jaskaran Singh Bhatia, Rajeela Deshpande, Parvinder Kumar Rana, Nikhila C M, Abhishek Ghosh, Rahul Kataria
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Publication number: 20200144245Abstract: Example embodiments provides a full adder integrated circuit (ADDF) for improving area and power of an integrated circuit (IC). The method includes receiving three input signals and generating three corresponding complementary output signals. Further, the method includes generating an internal signal using two complementary output signals out of the generated three corresponding complementary output signals, and one of the three input signals. Further, the method includes generating an output summation signal using a complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and a complementary internal signal of the generated internal signal. Further, the method includes generating a carry-out signal using two complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and the complementary internal signal.Type: ApplicationFiled: January 2, 2019Publication date: May 7, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Sajal MITTAL, Abhishek GHOSH, Utkarsh GARG
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Publication number: 20200136594Abstract: Embodiments herein disclose a flip flop comprising at least one of a slave circuit and a retention circuit receiving an input from a master circuit. The output circuit receives an input (X1) from at least one of the slave circuit and the retention circuit. A first node and a second node in the retention circuit receive a power supply from a global power supply through transistors, when a retention is 0 in the retention circuit, so that the slave circuit retains a current state of the X1 and X2 irrespective of a clock input in the slave circuit, and the output circuit receives the stored state of the retention circuit, when a local power supply is turned ON.Type: ApplicationFiled: October 23, 2019Publication date: April 30, 2020Inventors: Sajal Mittal, Aroma Bhat, Hareharan Nagarajan, Rahul Kataria, Abhishek Ghosh
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Patent number: 10615815Abstract: An analog-to-digital converter circuit comprises code-shuffling circuitry, a plurality of digital-to-analog converter circuits, a plurality of difference circuits, and a plurality of latch circuits. The code-shuffling circuitry is operable to shuffle a plurality of digital codes among a plurality of its outputs. The plurality of digital-to-analog converter circuits are operable to convert a digital code on the respective one of the outputs to a corresponding one of a plurality of analog reference voltages. The plurality of difference circuits is operable to generate a respective one of a plurality of difference signals corresponding to a difference between an input voltage and a respective one of the plurality of reference voltages. The plurality of latch circuits is operable to latch a respective one of the plurality of difference signals to a corresponding one of a plurality of digital values.Type: GrantFiled: May 1, 2019Date of Patent: April 7, 2020Assignee: MAXLINEAR, INC.Inventors: Rishi Mathur, Chandrajit Debnath, Abhishek Ghosh, Anand Mohan Pappu
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Publication number: 20200067507Abstract: A method and a flip-flop for designing low power integrated circuits (IC's). The method includes receiving at least one of a clock signal, a data signal, and a complimentary data signal. The complimentary data signal is produced by an input data inverter present in the flip-flop. Further, the method includes generating at least one master internal signal based on the received at least one of the clock signal, the data signal, and the complimentary data signal, when the clock signal is at a low logic level. Further, the method includes generating at least one slave internal signal based on at least one of the received clock signal and the generated at least one master internal signal, when the clock signal is at a high logic level. Further, the method includes generating an output signal based on the generated at least one slave internal signal.Type: ApplicationFiled: March 25, 2019Publication date: February 27, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sajal Mittal, Jaskaran Singh Bhatia, Rajeela Deshpande, Parvinder Kumar Rana, Nikhila C M, Abhishek Ghosh, Rahul Kataria