Abstract: A computer includes a processor and a memory, the memory storing instructions executable by the processor to receive sensor data indicating an obstacle, formulate a control barrier function for a vehicle based on the sensor data, determine a control input based on the control barrier function, and actuate a component of the vehicle according to the control input. The control barrier function is defined with respect to a reference point that is spaced from a centroid of the vehicle.

Abstract: The system comprises a prediction module (1) equipped with artificial intelligence to predict neurological disorders in an individual patient and identify a level of neurological disorders; a central processing unit (2) to detect triggering events and circumstances due to which the neurological disorders trigger in an individual patient upon receiving real-time behavior information data generated by a playing ball (3) of an individual patient and distinguish between a normal behavior and a neurological disorders behavior; an alert module (4) to alert the individual patient upon determining neurological disorders behavior; and an entertainment platform (5) to entertain and engage the individual patient with a specific set of activities assigned according to detected triggering events and circumstances upon determining the neurological disorders behavior, wherein a specific set of activities includes listening to music, playing games, and talking to an AI chatbot.

Abstract: Automated patient positioning and modelling includes a hardware processor to obtain image data from an imaging sensor, classify the image data, using a first machine learning model, as a patient pose based on one or more pre-defined protocols for patient positioning, provide a confidence score based on the classification of the image data and if the confidence score is less than a pre-determined value, re-classify the image data using a second machine learning model; or if the confidence score is greater than a pre-determined value, identify the image data as corresponding to a patient pose based on one or more pre-defined protocols for patient positioning during a scan procedure.

Abstract: The embodiments herein provide a system and method for personalized cartoon image generation. The method (100) comprises launching a keyboard interface (101), capturing a digital picture (102), face segmentation using neural network (103), normalization of segmented face (104), face cartoonification (105), which generates bobble head, facial landmark extraction (106), facial expression feature transfer (109) and customization of the generated plurality of cartoon images (110). Hence, the embodiments herein helps in creation of personalized plurality of cartoon images to make the user part of the conversations and the graphics or content shared look similar to the user input face and more aesthetically pleasing instead of using any reference stickers to convey the messages.

Abstract: A request to perform a storage operation for a storage system is received. It is determined that the requested storage operation is associated with a policy that requires a quorum of approvals before being allowed to be performed. It is determined whether the quorum of approvals has been obtained. In response to a determination that the quorum of approvals has been obtained, a command to perform the requested operation is provided to the storage system.

Abstract: Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a gate electrode above the substrate, and a channel layer above the substrate, separated from the gate electrode by a gate dielectric layer. The transistor further includes a contact electrode above the channel layer and in contact with a contact area of the channel layer. The contact area has a thickness determined based on a Schottky barrier height of a Schottky barrier formed at an interface between the contact electrode and the contact area, a doping concentration of the contact area, and a contact resistance at the interface between the contact electrode and the contact area. Other embodiments may be described and/or claimed.

Abstract: Integrated circuit dies, systems, and techniques are described herein related to three-dimensional dynamic random access memory. A memory device includes vertically aligned semiconductor structures coupled to independent gate structures, corresponding vertically aligned capacitors each coupled to a corresponding one of the semiconductor structures, and a bit line contact extending vertically across a depth of the semiconductor structures and coupled to each of the semiconductor structures.

Abstract: Integrated circuit dies, systems, and techniques are described herein related to one transistor-one capacitor dynamic random access memory. A memory device includes vertically aligned transistors having annular semiconductor structures and a shared bit line extending through the annular semiconductor structures, and vertically aligned capacitors having annular first capacitor plates, annular capacitor dielectric structures, and a shared second capacitor plate extending through the annular first capacitor plates, such that the annular first capacitor plates are in contact with corresponding ones of the annular semiconductor structures.

Abstract: Techniques and mechanisms for providing epitaxial structures of an integrated circuit (IC). In an embodiment, an IC comprises a separation layer, and first and second channel stack structures at opposite surfaces of the separation layer. A first source or drain (SD) structure extends to the first channel stack structure, and a second SD structure extends to the second channel stack structure. A hole extends through the separation layer, wherein the first and second SD structures are formed concurrently by a deposition of an epitaxial (epi) material from one side of the hole. An insulator material of the separation layer facilitates separation of the first and second SD structures from each other during the epi deposition. In another embodiment, respective crystal orientations in the first and second SD structures each face the same direction along a vertical dimension which is orthogonal to the surfaces of the separation layer.

Abstract: Integrated circuit dies, systems, and techniques are described herein related to three-dimensional dynamic random access memory. A memory device includes vertically aligned semiconductor structures coupled to independent gate structures, corresponding vertically aligned capacitors each coupled to a corresponding one of the semiconductor structures, and a bit line contact extending vertically across a depth of the semiconductor structures and coupled to each of the semiconductor structures.

Abstract: Techniques and mechanisms for providing an integrated circuit (IC) which comprises an interconnect that extends between channel structures of two transistors. In an embodiment, a separation layer is provided between a first stack of channel structures and a second stack of channel structures, wherein an interior region of the separation layer comprises a sacrificial material which spans on overlap region between the stacks. Fabrication processes form a hole which exposes the interior region, and etching is performed to remove the sacrificial material from the separation layer. Subsequently, deposition processing forms in the interior region a trace portion of the interconnect. In another embodiment, the interconnect comprises a contiguous body of a conductor material, wherein the contiguous body extends to form respective regions of the trace portion, and a via portion of the interconnect.

Abstract: Vertical thin film transistors (TFTs) including a gate electrode pillar clad with a gate dielectric. The gate dielectric is further clad with a semiconductor layer. Source or drain metallization is embedded in trenches formed in an isolation dielectric adjacent to separate regions of the semiconductor layer. During TFT operation, biasing of the gate electrode can induce one or more transistor channel within the semiconductor layer, electrically coupling together the source and drain metallization. A width of the channel may be proportional to a height of the gate electrode pillar clad by the semiconductor layer, while a length of the channel may be proportional to the spacing between contacts occupied by the semiconductor layer. In some embodiments, a memory device may include cells comprising a vertical thin film select transistor and a capacitor (1TFT-1C).

Abstract: A system for providing rehabilitation in a virtual environment includes an extended reality (XR) headset to present a first rehabilitation therapy to a patient in a virtual environment. A sensing device is configured to track physical movements of the patient and a processor is configured to receive the sensing data to determine pose information. The processor is configured to determine a performance metric associated with the physical movements and compare the performance metric with a reference metric to determine whether the patient has successfully performed the defined physical movements. The processor is configured to change the first rehabilitation therapy to a second rehabilitation therapy based on a difference between the performance metric and the reference metric upon determining that the patient has unsuccessfully performed the defined physical movements. The system aids the patient by changing the rehabilitation therapies according to the performance of the patient.

Abstract: Embodiments disclosed herein include three-dimensional 3D arrays of memory cells and methods of forming such devices. In an embodiment a memory device comprises, a substrate surface, and a three-dimensional (3D) array of memory cells over the substrate surface. In an embodiment each memory cell comprises a transistor and a capacitor. In an embodiment the transistor of each memory cell comprises, a semiconductor channel, with a first end of the semiconductor channel electrically coupled to a bit line that runs substantially parallel to the substrate surface, and a second end of the semiconductor channel is electrically coupled to the capacitor. The transistor may also comprise a gate dielectric on a surface of the semiconductor channel between the first end and the second end of the semiconductor channel. In an embodiment, the gate dielectric is contacted by a word line that runs substantially perpendicular to the substrate surface.

Abstract: A system includes a processor and a memory. The memory stores instructions executable by the processor to determine a virtual barrier around a vehicle based on receiving a first user input and data indicating a vehicle sprung mass, upon receiving a second user input selecting the virtual barrier, to determine an updated virtual barrier based on the received second user input, upon determining the virtual barrier, to verify that the virtual barrier satisfies one or more vehicle parameters; and to provide output based on the virtual barrier.

Abstract: Transistor structures may include a metal oxide contact buffer between a portion of a channel material and source or drain contact metallization. The contact buffer may improve control of transistor channel length by limiting reaction between contact metallization and the channel material. The channel material may be of a first composition and the contact buffer may be of a second composition.

Abstract: Embodiments herein describe techniques for a semiconductor device including a transistor. The transistor includes a first metal contact as a source electrode, a second metal contact as a drain electrode, a channel area between the source electrode and the drain electrode, and a third metal contact aligned with the channel area as a gate electrode. The first metal contact may be located in a first metal layer along a first direction. The second metal contact may be located in a second metal layer along the first direction, in parallel with the first metal contact. The third metal contact may be located in a third metal layer along a second direction substantially orthogonal to the first direction. The third metal layer is between the first metal layer and the second metal layer. Other embodiments may be described and/or claimed.

Abstract: A network operating system (NOS) receives a bundle file transmitted from a vendor terminal of a vendor providing a network service, the bundle file including first data defining a functional unit group that achieves the network service and second data defining a monitoring policy for the network service. The NOS constructs the functional unit group based on the first data of the bundle file when the network service is purchased by a purchaser. The NOS executes a monitoring process on the functional unit group based on information on the functional unit group to be constructed and the second data of the bundle file.

Abstract: A computer is programmed to identify first and second virtual boundaries of a roadway lane based on a predicted boundary between the roadway lane and an adjacent roadway lane, determine a first constraint value based on a first virtual boundary approach acceleration, determine a second constraint value based on a second virtual boundary approach acceleration, output a prescribed steering angle, brake input, and propulsion input when one of the constraint values violates a respective threshold, and actuate components to attain the prescribed steering angle, brake input, and propulsion input. The first virtual boundary approach acceleration is based on a steering wheel angle of a vehicle and input to one of a brake or a propulsion of the vehicle. The second virtual boundary approach acceleration is based on a steering wheel angle of the vehicle and input to one of a brake or a propulsion of the vehicle.

Abstract: A computer includes a processor and a memory, and the memory stores instructions executable by the processor to receive sensor data indicating an obstacle, formulate a control barrier function for a vehicle and the obstacle based on the sensor data, determine a control input based on the control barrier function and a combination function, and actuate a component of the vehicle according to the control input. The combination function is a sum of a first function weighted by a first weight and a second function weighted by a second weight, and the first weight and the second weight are based on a kinematic state of the obstacle.