Abstract: A computer includes a processor and a memory, and the memory stores instructions executable by the processor to receive sensor data indicating an obstacle, formulate a control barrier function for a vehicle and the obstacle based on the sensor data, determine a control input based on the control barrier function and a combination function, and actuate a component of the vehicle according to the control input. The combination function is a sum of a first function weighted by a first weight and a second function weighted by a second weight, and the first weight and the second weight are based on a kinematic state of the obstacle.

Abstract: A dataflow programming language can be used to express reactive dataflow programs that can be used in pattern-driven real-time data analysis. One or more tools are provided for the dataflow programming language for checking syntactic and semantic correctness, checking logical correctness, debugging, translation of source code into a secure, portable format (e.g., packaged code), translation of source code (or packaged code) into platform-specific code, batch-mode interpretation, interactive interpretation, simulation and visualization of the dataflow environment, remote execution, monitoring, or any combination of these. These tools embody a method of developing, debugging, and deploying a dataflow graph device.

Abstract: Microelectronic assemblies fabricated using hybrid manufacturing, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by arranging together at least two IC structures fabricated by different manufacturers, using different materials, or different manufacturing techniques. For example, a microelectronic assembly may include a first IC structure that includes first interconnects and a second IC structure that includes second interconnects, where at least some of the first and second interconnects may include a liner and an electrically conductive fill material, and where a material composition of the liner/electrically conductive fill material of the first interconnects may be different from a material composition of the liner/electrically conductive fill material of the second interconnects.

Abstract: An archival storage of data backed up from a repository storage of a primary storage is maintained. Access to data stored in archival storage is limited by one or more access policies based on whether a corresponding data restore has been authorized. A request for specific data stored in the archival storage is received. The one or more access policies are automatically managed based on status and timing of one or more data restore authorizations for the specific data stored in the archival storage.

Abstract: An integrated circuit includes one or more layers of insulating material defining a vertical bore with a first portion and a second portion. A capacitor structure is in the first portion of the vertical bore and includes a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode. A transistor structure is in the second portion of the vertical bore and includes a third electrode extending into the second portion of the vertical bore, a layer of semiconductor material in contact with the first electrode and in contact with the second electrode, and a dielectric between the semiconductor material and the insulating material. A fourth electrode wraps around the transistor structure such that the dielectric is between the semiconductor material and the fourth electrode. The capacitor structure can be above or below the transistor structure in a self-aligned vertical arrangement.

Abstract: Disclosed is a system and a method for configuring an IP device to be discoverable to a client device over a local network having a DHCP server for assigning dynamic IP addresses. The method includes obtaining a dynamic IP address assigned to the IP device upon completion of boot process for the IP device; checking if a static IP address has been set for the IP device; determining if the dynamic IP address and the static IP address are in a same subnet of the local network; implementing the static IP address set for the IP device, if the dynamic IP address and the static IP address are in the same subnet of the local network; and implementing the dynamic IP address assigned to the IP device, if the dynamic IP address and the static IP address are not in the same subnet of the local network.

Abstract: Examples herein relate to a memory device comprising an eDRAM memory cell, the eDRAM memory cell can include a write circuit formed at least partially over a storage cell and a read circuit formed at least partially under the storage cell; a compute near memory device bonded to the memory device; a processor; and an interface from the memory device to the processor. In some examples, circuitry is included to provide an output of the memory device to emulate output read rate of an SRAM memory device comprises one or more of: a controller, a multiplexer, or a register. Bonding of a surface of the memory device can be made to a compute near memory device or other circuitry. In some examples, a layer with read circuitry can be bonded to a layer with storage cells. Any layers can be bonded together using techniques described herein.

Abstract: An integrated circuit includes: a gate dielectric; a first layer adjacent to the gate dielectric; a second layer adjacent to the first layer, the second layer comprising an amorphous material; a third layer adjacent to the second layer, the third layer comprising a crystalline material; and a source or drain at least partially adjacent to the third layer. In some cases, the crystalline material of the third layer is a first crystalline material, and the first layer comprises a second crystalline material, which may be the same as or different from the first crystalline material. In some cases, the gate dielectric includes a high-K dielectric material. In some cases, the gate dielectric, the first layer, the second layer, the third layer, and the source or drain are part of a back-gate transistor structure (e.g., back-gate TFT), which may be part of a memory structure (e.g., located within an interconnect structure).

Abstract: Relationship-apparent application artifact registration is performed by attaching, to the bundle service specification, a bundle identifier, the principal address, and an artifact relationship specification, the artifact relationship specification representing, for each of the one or more artifact service specifications, the subordinate address, the artifact identifier, and the artifact type of each represented artifact, and attaching, to each of the one or more artifact service specifications, a bundle relationship specification, the bundle relationship specification representing the bundle identifier and the principal address.

Abstract: Embodiments herein describe techniques for a semiconductor device including a three dimensional capacitor. The three dimensional capacitor includes a pole, and one or more capacitor units stacked around the pole. A capacitor unit of the one or more capacitor units includes a first electrode surrounding and coupled to the pole, a dielectric layer surrounding the first electrode, and a second electrode surrounding the dielectric layer. Other embodiments may be described and/or claimed.

Abstract: A transistor includes a semiconductor body including a material such as an amorphous or polycrystalline material, for example and a gate stack on a first portion of the body. The gate stack includes a gate dielectric on the body, and a gate electrode on the gate dielectric. The transistor further includes a first metallization structure on a second portion of the body and a third metallization structure on a third portion of the body, opposite to the second portion. The transistor further includes a ferroelectric material on at least a fourth portion of the body, where the ferroelectric material is between the gate stack and the first or second metallization structure.

Abstract: Integrated circuit dies, systems, and techniques are described related to multiple transistor epitaxial layer source and drain transistor circuits operable at low temperatures. A system includes an integrated circuit die having a number of transistors each having a crystalline channel structure, a first layer epitaxial to the channel structure, and a second layer epitaxial to the first layer. The system further includes a cooling structure integral to the integrated circuit die, coupled to the integrated circuit die, or both. The cooling structure is operable to remove heat from the integrated circuit die to achieve an operating temperature at the desired low temperature.

Abstract: Integrated circuit dies, systems, and techniques, are described herein related to junction field effect transistors operable at low temperatures and low voltages. A system includes an integrated circuit die deploying a junction field effect transistor that includes a source, a drain, and a gate structure coupled to a multi-layer quantum well. The source and drain are indium arsenide and the gate structure includes a high-k gate dielectric material. The system further includes a cooling structure integral to the integrated circuit die, coupled to the integrated circuit die, or both. The cooling structure is operable to remove heat from the integrated circuit die to achieve a low operating temperature of the integrated circuit die.

Abstract: Integrated circuit dies, systems, and techniques, are described herein related to single conductivity type transistor circuits operable at low temperatures. A system includes a functional circuit block of an integrated circuit die having a number of non-planar transistors all of the same conductivity type. The system further includes cooling structure integral to the integrated circuit die, coupled to the integrated circuit die, or both. The cooling structure is operable to remove heat from the integrated circuit die to achieve an operating temperature at the desired low temperature.

Abstract: Integrated circuit dies, systems, and techniques are described related to multiple gate digital to analog converters operable at low temperatures. A multiple gate digital to analog converter includes a channel material spanning a length between a source and a drain and multiple gate structures of different sizes coupled to the channel material and spaced apart along the length. The multiple gate structures of the digital to analog converter are independently operable to convert a digital input to an analog output.

Abstract: A transmitter emits transmit signals to an ear-region. Image signals are generated by a receiver. The image signals are generated by the receiver in response to receiving return signals. The return signals are the millimeter-wave transmit signals reflecting back from the ear-region. An ear-region image is generated in response to the image signals.

Abstract: A vertical transistor structure includes a material stack having a source material, a drain material, and a channel material therebetween. The vertical transistor structure further includes a gate electrode adjacent to a sidewall of the stack, where the sidewall includes the channel material, and at least a partial thickness of both the source material and the drain material. A gate dielectric is present between the sidewall of the stack and the gate electrode. The vertical transistor structure further includes a first metallization over a first area of the stack above the gate dielectric layer, and in contact with the gate electrode on sidewall of the stack. A second metallization is adjacent to the first metallization, where the second metallization is over a second area of the stack, and in contact with the source material or the drain material.

Abstract: Embodiments herein describe techniques for a three dimensional transistor above a substrate. A three dimensional transistor includes a channel structure, where the channel structure includes a channel material and has a source area, a drain area, and a channel area between the source area and the drain area. A source electrode is coupled to the source area, a drain electrode is coupled to the drain area, and a gate electrode is around the channel area. An electrode selected from the source electrode, the drain electrode, or the gate electrode is in contact with the channel material on a sidewall of an opening in an inter-level dielectric layer or a surface of the electrode. The electrode is further in contact with the channel structure including the source area, the drain area, or the channel area. Other embodiments may be described and/or claimed.

Abstract: An integrated circuit includes a first layer comprising dielectric material. One or both of an interconnect feature and a device are within the dielectric material of the first layer. The integrated circuit further includes a second layer above the first layer, where the second layer includes dielectric material. A third layer is between the first layer and the second layer. In an example, the third layer can be, for example, an etch stop layer or a liner layer or barrier layer. In an example, an impurity is within the first layer and the third layer. In an example, the impurity has a detectable implant depth profile such that a first distribution of the impurity is within the first layer and a second distribution of the impurity is within the third layer.

Abstract: Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include thick hysteretic elements (i.e., hysteretic elements having a thickness of at least 10-15 nanometers, e.g., between 55 and 100 nanometers), and related methods and devices. Transistor gate stacks disclosed herein include a multilayer gate insulator having a thick hysteretic element and an interface layer, where the thick hysteretic element is between the interface layer and a gate electrode material, and the interface layer is between the thick hysteretic element and a channel material of a transistor. The interface layer may be a dielectric material with an effective dielectric constant of at least 20 and/or be a dielectric material that is thinner than about 3 nanometers. Such an interface layer may help improve gate control and allow use of thick hysteretic elements while maintaining transistor performance in terms of, e.g., gate leakage, carrier mobility, and subthreshold swing.