Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: An electromechanical switch device includes a first switch portion, a second switch portion and an actuator device. The actuator device is configured to provide an actuation force, thereby actuating the first and second switch portion relative to each other to change from a disconnected to a connected state. The actuator device is further configured to provide the actuation force with a modulation at least when the first and second switch portion are in the connected state. A method of operating an electromechanical switch device is also provided.

Abstract: A mechanism for controlling a plant is provided. A reference signal is received at a signal transformation loop of a feedback controller. The signal transformation loop causes the reference signal to include a disturbance signal and a nominal signal. Also, the reference signal is received at a feed-forward controller, and the feed-forward controller recreates the disturbance signal that was caused by the signal transformation loop. The output of the feedback controller is input into a plant. The output of the feed-forward controller is input into the plant such that the disturbance signal is removed from the output of the feedback controller.

Abstract: A micro-electro mechanical device includes a first structure, a second structure offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position.

Abstract: A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.

Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: A method and apparatus for programming a phase-change memory cell. A bias voltage signal (VBL) is applied to the cell. A measurement portion (m) of this bias voltage signal has a profile which varies with time. A measurement (TM), which is dependent on a predetermined condition being satisfied, is then made. The predetermined condition is dependent on cell current during the measurement portion (m) of the bias voltage signal. A programming signal is generated in dependence on the measurement (TM), and the programming signal is applied to program the cell.

Abstract: Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (SFB) dependent on the difference between the cell current and a predetermined target current. The bias voltage controller controls the bias voltage level in dependence on the feedback signal (SFB) such that the cell current converges on the target current. An output is provided indicative of the bias voltage level at which the cell current corresponds to the target current, thus providing a voltage-based metric for cell-state.

Abstract: Tips including a platinum silicide at an apex of a single crystal silicon tip are provided herein. Also, techniques for creating a tip are provided. The techniques include depositing an amount of platinum (Pt) on a single crystal silicon tip, annealing the platinum and single crystal silicon tip to form a platinum silicide, and selectively etching the platinum with respect to the formed platinum silicide.

Abstract: A method, an apparatus, and a device for determining the state of a phase-change memory cell. The method includes the steps of: biasing a cell with a time-varying read voltage (Vread); making a measurement (TM) that satisfies a predetermined condition where the predetermined condition depends on a cell current when the read voltage is applied; and determining a state of the cell based on the measurement.

Abstract: The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.

Abstract: A method, an apparatus, and a device for determining the state of a phase-change memory cell. The method includes the steps of: biasing a cell with a time-varying read voltage (Vread); making a measurement (TM) that satisfies a predetermined condition where the predetermined condition depends on a cell current when the read voltage is applied; and determining a state of the cell based on the measurement.

Abstract: A method and apparatus for programming a phase-change memory cell. A bias voltage signal (VBL) is applied to the cell. A measurement portion (m) of this bias voltage signal has a profile which varies with time. A measurement (TM), which is dependent on a predetermined condition being satisfied, is then made. The predetermined condition is dependent on cell current during the measurement portion (m) of the bias voltage signal. A programming signal is generated in dependence on the measurement (TM), and the programming signal is applied to program the cell.

Abstract: Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (SFB) dependent on the difference between the cell current and a predetermined target current. The bias voltage controller controls the bias voltage level in dependence on the feedback signal (SFB) such that the cell current converges on the target current. An output is provided indicative of the bias voltage level at which the cell current corresponds to the target current, thus providing a voltage-based metric for cell-state.

Abstract: A mechanism for controlling a plant is provided. A reference signal is received at a signal transformation loop of a feedback controller. The signal transformation loop causes the reference signal to include a disturbance signal and a nominal signal. Also, the reference signal is received at a feed-forward controller, and the feed-forward controller recreates the disturbance signal that was caused by the signal transformation loop. The output of the feedback controller is input into a plant. The output of the feed-forward controller is input into the plant such that the disturbance signal is removed from the output of the feedback controller.

Abstract: One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material.

Abstract: An apparatus is provided and includes a cantilever having a tip at a distal end thereof disposed with the tip positioned an initial distance from a sample and a circuit electrically coupled to a substrate on which the sample is layered and the cantilever to simultaneously apply direct and alternating currents to deflect the cantilever and to cause the tip to oscillate about a point at a second distance from the sample, which is shorter than the initial distance, between first positions, at which the tip contacts the sample, and second positions, at which the tip is displaced from the sample.

Abstract: The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.

Abstract: The invention relates to a method of controlling movements of a positioner of a micro-scanner, the method comprising: determining the vibration resonance frequency ranges of the positioner, and performing a main scan by a controlled movement of the positioner.