Abstract: A computing system having a computational memory and a method configured to perform computations using an approximate message passing process. The system exploits memcomputing which is a prominent non-von Neumann computational approach expected to significantly improve an energy efficiency of computing systems. The computational memory includes at least one memristive array comprising a plurality of memristive devices arranged in a crossbar topology and the computing system may further comprise digital combinational control circuitry adapted to perform read and write operations on the at least one memristive array and to store at least one state variable of the approximate message passing process. An output of the at least one memristive array represents a result of a computation of the approximate message passing process. The control circuitry may comprise circuitry to iteratively perform computations that may not require high precision.

Abstract: Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.

Abstract: A method and system providing a multi-memristive synaptic element for a cognitive computing system. The multi-memristive synaptic element comprises an array of memristive devices. The method comprises arbitrating a synaptic weight allocation, a related synaptic weight being represented by a synaptic weight variable of said multi-memristive synaptic element, updating said synaptic weight variable by a delta amount, and assigning said memristive devices to elements of a clock-like ordered circular list for selecting a particular memristor of said memristive devices requiring to be updated by a deterministic, periodic global clock that points to a different memristor at every clock tick, such that said multi-memristive synaptic element has a larger dynamic range and a more linear conductance response than a single memristor synaptic element.

Abstract: A computing system includes computational memory and digital combinational circuitry operatively coupled with the computational memory. The computational memory is configured to perform computations at a prescribed precision. The digital combinational circuitry is configured to increase the precision of the computations performed by the computational memory. The computational memory and the digital combinational circuitry may be configured to iteratively perform a computation to a predefined precision. The computational memory may include circuitry configured to perform analog computation using values stored in the computational memory, and the digital combinational circuitry may include a central processing unit, a graphics processing unit and/or application specific circuitry. The computational memory may include an array of resistive memory elements having resistance or conductance values stored therein, the respective resistance or conductance values being programmable.

Abstract: Artificial neuron apparatus includes first and second resistive memory cells. The first resistive memory cell is connected in first circuitry having a first input and output. The second resistive memory cell is connected in second circuitry having a second input and output. The first and second circuitry are operable in alternating read and write phases to apply a programming current to their respective memory cells on receipt of excitatory and inhibitory neuron input signals, respectively. During the write phase, resistance of the respective cells is changed in response to successive excitatory and inhibitory neuron input signals. During the read phase, a read current is applied to their respective cells to produce first and second measurement signals, respectively. An output circuit connected to the first and second outputs produces a neuron output signal at a neuron output when a difference between the first and second measurement signals traverses a threshold.

Abstract: Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.

Abstract: A device for performing a multiplication of a matrix with a vector. The device comprises a plurality of memory elements, a signal generator and a readout circuit. The signal generator is configured to apply programming signals to the memory elements. The signal generator is further configured to control a first signal parameter of the programming signals in dependence on matrix elements of the matrix and to control a second signal parameter of the programming signals in dependence on vector elements of the vector. The readout circuit is configured to read out memory values of the memory elements. The memory values represent result values of vector elements of a product vector of the multiplication. The memory elements may be in particular resistive memory elements or photonic memory elements. Additionally there is provided a related method and design structure for performing the multiplication of a matrix with a vector.

Abstract: A system, method and computer program product for achieving a collective task. The system comprises a plurality of elements representative of a first hierarchy level, each element comprises a plurality of sub-elements. The system comprises also an arbitration module for selecting one of the sub-elements of each element at a point in time based on a global clock, wherein each sub-element relates to one list element of an ordered circular list, and a combination module adapted for a combination of sub-actions performed by a portion of the sub-elements of one of the elements over a predefined period of time, wherein each sub-element performs one of the sub-actions.

Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

Abstract: A method and system providing a multi-memristive synaptic element for a cognitive computing system. The multi-memristive synaptic element comprises an array of memristive devices. The method comprises arbitrating a synaptic weight allocation, a related synaptic weight being represented by a synaptic weight variable of said multi-memristive synaptic element, updating said synaptic weight variable by a delta amount, and assigning said memristive devices to elements of a clock-like ordered circular list for selecting a particular memristor of said memristive devices requiring to be updated by a deterministic, periodic global clock that points to a different memristor at every clock tick, such that said multi-memristive synaptic element has a larger dynamic range and a more linear conductance response than a single memristor synaptic element.

Abstract: A sensor arrangement for position sensing comprises a first magnetoresistive element (1) and a second magnetoresistive element (2). A magnetic field source (3) provides a magnetic field with a first magnetic pole (N) and a second magnetic pole (S). The magnetic field source (3) is arranged between the first magnetoresistive element (1) and the second magnetoresistive element (2) with the first magnetic pole (N) facing the first magnetoresistive element (1) and the second magnetic pole (S) facing the second magnetoresistive element (2). The first magnetoresistive element (1) is arranged in the magnetic field and provides a first output signal (R1) dependent on a position of the first magnetoresistive element (1) relative to the magnetic field source (3). The second magnetoresistive element (2) is arranged in the magnetic field and provides a second output signal (R2) dependent on a position of the second magnetoresistive element (2) relative to the magnetic field source (3).

Abstract: A position sensor comprises a magneto-resistive element. The magneto-resistive element comprises a stack of layers including at least a conductive layer in between two magnetic layers. The layers have a longitudinal extension along a longitudinal axis and a lateral extension along a transverse axis. A magnet is provided comprising a magnetic dipole with a dipole axis orthogonal to a plane defined by the longitudinal axis and the transverse axis. The electrical resistance of the conductive layer depends on a position of the magnet along the longitudinal axis. The position sensor provides for nano-scale sensing.

Abstract: A method of fabricating a resistive memory element having a layer structure includes: providing a substrate; depositing a first electrode on an upper surface of the substrate; forming a layer of confining material on an upper surface of the first electrode so as to define a cavity having a maximal lateral dimension that is less than 60 nm along a direction parallel to an average plane of the first electrode, the confining material having a thermal conductivity greater than 0.5 W/(m·K); depositing a resistively switchable material as an amorphous compound comprising carbon to fill the cavity; and depositing a second electrode on an upper surface of the resistively switchable material.

Abstract: Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.

Abstract: A resistive memory element is provided having a layer structure. The layer structure includes two layers forming two electrically conductive electrodes, respectively, a resistively switchable material sandwiched between the two layers forming the two electrodes, and in electrical connection therewith, and a confining material. The resistively switchable material is laterally confined within the confining material, between the two layers forming the electrodes. The confining material is sufficiently electrically insulating for an electric signal applied between the two conductive electrodes to change a resistance state of the memory element in operation. The confining material has a thermal conductivity greater than 0.5 W/(m·K), and preferably greater than or equal to 30 W/(m·K). The resistively switchable material is an amorphous compound comprising carbon, which has a maximal lateral dimension, along a direction parallel to an average plane of the two layers forming the electrodes, that is less than 60 nm.

Abstract: A sensor arrangement for position sensing comprises a magnetic field source and a magnetoresistive element arranged in a magnetic field generated by the magnetic field source, which magnetoresistive element provides an output signal (R) dependent on a position (x) of the magnetoresistive element relative to the magnetic field source. A feedback controller is configured to receive the output signal (R) of the magnetoresistive element and is configured to adjust one or more of the position (x) of the magnetoresistive element relative to the magnetic field source and a strength of the magnetic field generated by the magnetic field source acting on the magnetoresistive element dependent on the output signal (R) of the magnetoresistive element.

Abstract: A resistive memory element is provided having a layer structure. The layer structure includes two layers forming two electrically conductive electrodes, respectively, a resistively switchable material sandwiched between the two layers forming the two electrodes, and in electrical connection therewith, and a confining material. The resistively switchable material is laterally confined within the confining material, between the two layers forming the electrodes. The confining material is sufficiently electrically insulating for an electric signal applied between the two conductive electrodes to change a resistance state of the memory element in operation. The confining material has a thermal conductivity greater than 0.5 W/(m·K), and preferably greater than or equal to 30 W/(m·K). The resistively switchable material is an amorphous compound comprising carbon, which has a maximal lateral dimension, along a direction parallel to an average plane of the two layers forming the electrodes, that is less than 60 nm.

Abstract: An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal. A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value.

Abstract: A method for evaluating a trajectory function to be followed by a physical system includes providing the trajectory function; determining a set of sampling points by sampling a trajectory based on the trajectory function in the time domain; associating a cell to each of the sampling points; assessing at least one cell metric for each of the cells; aggregating the at least one cell metric of the cells to obtain an aggregated metric measure; and evaluating the trajectory as determined by the provided trajectory function depending on the one or more aggregated metric measures.

Abstract: A sensor arrangement for position sensing comprises a magnetic field source and a magnetoresistive element arranged in a magnetic field generated by the magnetic field source, which magnetoresistive element provides an output signal (R) dependent on a position (x) of the magnetoresistive element relative to the magnetic field source. A feedback controller is configured to receive the output signal (R) of the magnetoresistive element and is configured to adjust one or more of the position (x) of the magnetoresistive element relative to the magnetic field source and a strength of the magnetic field generated by the magnetic field source acting on the magnetoresistive element dependent on the output signal (R) of the magnetoresistive element.