Patents by Inventor Adel A. Elsherbini

Adel A. Elsherbini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12218069
    Abstract: An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.
    Type: Grant
    Filed: December 30, 2022
    Date of Patent: February 4, 2025
    Assignee: Intel Corporation
    Inventors: Aleksandar Aleksov, Adel A. Elsherbini, Kristof Darmawikarta, Robert A. May, Sri Ranga Sai Boyapati
  • Publication number: 20250040231
    Abstract: Gallium nitride (GaN) three-dimensional integrated circuit technology is described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, a plurality of gate structures over the layer including gallium and nitrogen, a source region on a first side of the plurality of gate structures, a drain region on a second side of the plurality of gate structures, the second side opposite the first side, and a drain field plate above the drain region wherein the drain field plate is coupled to the source region. In another example, a semiconductor package includes a package substrate. A first integrated circuit (IC) die is coupled to the package substrate. The first IC die includes a GaN device layer and a Si-based CMOS layer.
    Type: Application
    Filed: October 14, 2024
    Publication date: January 30, 2025
    Inventors: Han Wui THEN, Marko RADOSAVLJEVIC, Pratik KOIRALA, Nicole K. THOMAS, Paul B. FISCHER, Adel A. ELSHERBINI, Tushar TALUKDAR, Johanna M. SWAN, Wilfred GOMES, Robert S. CHAU, Beomseok CHOI
  • Publication number: 20250022845
    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.
    Type: Application
    Filed: September 6, 2024
    Publication date: January 16, 2025
    Inventors: Adel A. Elsherbini, Feras Eid, Johanna M. Swan, Shawna M. Liff
  • Patent number: 12199018
    Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: January 14, 2025
    Assignee: Intel Corporation
    Inventors: Adel A. Elsherbini, Krishna Bharath, Han Wui Then, Kimin Jun, Aleksandar Aleksov, Mohammad Enamul Kabir, Shawna M. Liff, Johanna M. Swan, Feras Eid
  • Patent number: 12199067
    Abstract: An embedded silicon bridge system including tall interconnect via pillars is part of a system in package device. The tall via pillars may span a Z-height distance to a subsequent bond pad from a bond pad that is part of an organic substrate that houses the embedded silicon bridge.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: January 14, 2025
    Assignee: Intel Corporation
    Inventors: Adel A. Elsherbini, Henning Braunisch, Javier Soto Gonzalez, Shawna M. Liff
  • Patent number: 12199012
    Abstract: A microfluidic device having a channel within a first material to thermally couple with an IC die. The channel defines an initial fluid path between a fluid inlet port and a fluid outlet port. A second material is within a portion of the channel. The second material supplements the first material to modify the initial fluid path into a final fluid path between the fluid inlet port and the fluid outlet port. The second material may have a different composition and/or microstructure than the first material.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: January 14, 2025
    Assignee: Intel Corporation
    Inventors: Adel Elsherbini, Stephen Morein, Feras Eid, Georgios Dogiamis
  • Patent number: 12199063
    Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.
    Type: Grant
    Filed: January 3, 2024
    Date of Patent: January 14, 2025
    Assignee: Intel Corporation
    Inventors: Shawna M. Liff, Adel A. Elsherbini, Johanna M. Swan, Arun Chandrasekhar
  • Publication number: 20250006695
    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer with a first die having a first contact; a second die having a second contact; and a pad layer, on the first and second dies, including a first pad and a second pad, where the first pad is coupled to and offset from the first contact in a first direction, and the second pad is coupled to and is offset from the second contact in a second direction different than the first direction; and a second layer including a third die having third and fourth contacts, where the first layer is coupled to the second layer by metal-to-metal bonds and fusion bonds, the first contact is coupled to the third contact by the first pad, and the second contact is coupled to the fourth contact by the second pad.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 2, 2025
    Applicant: Intel Corporation
    Inventors: Bhaskar Jyoti Krishnatreya, Adel A. Elsherbini, Brandon M. Rawlings, Kimin Jun, Omkar G. Karhade, Mohit Bhatia, Nitin A. Deshpande, Prashant Majhi, Johanna M. Swan
  • Publication number: 20250006678
    Abstract: Disclosed herein are microelectronic assemblies, related apparatuses, and methods. In some embodiments, a microelectronic assembly may include a first die in a first layer; and a second and third die in a second layer, the second layer coupled to the first layer by hybrid bond interconnects having a first pad and a second pad, wherein the first pad is coupled to a first via in the second die and the first pad is offset from the first via by a first dimension, and the second pad is coupled to a second via in the third die and the second pad is offset from the second via by a second dimension different than the first dimension. In some embodiments, the first pad is offset from the first via in a first direction and the second pad is offset from the second via in a second direction different than the first direction.
    Type: Application
    Filed: June 30, 2023
    Publication date: January 2, 2025
    Applicant: Intel Corporation
    Inventors: Omkar G. Karhade, Harini Kilambi, Kimin Jun, Adel A. Elsherbini, John Edward Zeug Matthiesen, Trianggono Widodo, Adita Das, Mohit Bhatia, Dimitrios Antartis, Bhaskar Jyoti Krishnatreya, Rajesh Surapaneni, Xavier Francois Brun
  • Patent number: 12183961
    Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: December 31, 2024
    Assignee: Intel Corporation
    Inventors: Aleksandar Aleksov, Georgios C. Dogiamis, Telesphor Kamgaing, Sasha N. Oster, Adel A. Elsherbini, Shawna M. Liff, Johanna M. Swan, Brandon M. Rawlings, Richard J. Dischler
  • Patent number: 12176323
    Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include: a first die having a first surface and an opposing second surface, first conductive contacts at the first surface of the first die, and second conductive contacts at the second surface of the first die; and a second die having a first surface and an opposing second surface, and first conductive contacts at the first surface of the second die; wherein the second conductive contacts of the first die are coupled to the first conductive contacts of the second die by interconnects, the second surface of the first die is between the first surface of the first die and the first surface of the second die, and a footprint of the first die is smaller than and contained within a footprint of the second die.
    Type: Grant
    Filed: April 25, 2022
    Date of Patent: December 24, 2024
    Assignee: Intel Corporation
    Inventors: Adel A. Elsherbini, Henning Braunisch, Aleksandar Aleksov, Shawna M. Liff, Johanna M. Swan, Patrick Morrow, Kimin Jun, Brennen Mueller, Paul B. Fischer
  • Patent number: 12170244
    Abstract: An integrated circuit (IC) die package substrate comprises a first trace upon, or embedded within, a dielectric material. The first trace comprises a first metal and a first via coupled to the first trace. The first via comprises the first metal and a second trace upon, or embedded within, the dielectric material. A second via is coupled to the second trace, and at least one of the second trace or the second via comprises a second metal with a different microstructure or composition than the first metal.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: December 17, 2024
    Assignee: Intel Corporation
    Inventors: Adel Elsherbini, Feras Eid, Georgios Dogiamis, Henning Braunisch, Beomseok Choi, William J. Lambert, Stephen Morein, Ahmed Abou-Alfotouh, Johanna Swan
  • Patent number: 12165962
    Abstract: Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: December 10, 2024
    Assignee: Intel Corporation
    Inventors: Aleksandar Aleksov, Mohammad Enamul Kabir, Adel A. Elsherbini, Shawna M. Liff, Johanna M. Swan, Feras Eid
  • Patent number: 12150271
    Abstract: Embodiments may relate an electronic device that includes a first server blade and a second server blade coupled with a chassis. The first and second server blades may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first and second server blades such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.
    Type: Grant
    Filed: June 8, 2023
    Date of Patent: November 19, 2024
    Assignee: Intel Corporation
    Inventors: Telesphor Kamgaing, Johanna M. Swan, Georgios Dogiamis, Henning Braunisch, Adel A. Elsherbini, Aleksandar Aleksov, Richard Dischler
  • Patent number: 12148747
    Abstract: Gallium nitride (GaN) three-dimensional integrated circuit technology is described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, a plurality of gate structures over the layer including gallium and nitrogen, a source region on a first side of the plurality of gate structures, a drain region on a second side of the plurality of gate structures, the second side opposite the first side, and a drain field plate above the drain region wherein the drain field plate is coupled to the source region. In another example, a semiconductor package includes a package substrate. A first integrated circuit (IC) die is coupled to the package substrate. The first IC die includes a GaN device layer and a Si-based CMOS layer.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: November 19, 2024
    Assignee: Intel Corporation
    Inventors: Han Wui Then, Marko Radosavljevic, Pratik Koirala, Nicole K. Thomas, Paul B. Fischer, Adel A. Elsherbini, Tushar Talukdar, Johanna M. Swan, Wilfred Gomes, Robert S. Chau, Beomseok Choi
  • Patent number: 12142510
    Abstract: Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: November 12, 2024
    Assignee: Intel Corporation
    Inventors: Shawna M. Liff, Johanna M. Swan, Adel A. Elsherbini, Michael J. Baker, Aleksandar Aleksov, Feras Eid
  • Patent number: 12142543
    Abstract: An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat dissipation device in thermal contact with the integrated circuit device, wherein a first portion of the heat dissipation device extends into the substrate and wherein a second portion of the heat dissipation device extends over the substrate. In one embodiment, the heat dissipation device may comprise the first portion of the heat dissipation device formed from metallization within the substrate.
    Type: Grant
    Filed: December 30, 2022
    Date of Patent: November 12, 2024
    Assignee: Intel Corporation
    Inventors: Johanna Swan, Feras Eid, Adel Elsherbini
  • Publication number: 20240355768
    Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
    Type: Application
    Filed: July 2, 2024
    Publication date: October 24, 2024
    Applicant: Intel Corporation
    Inventors: Adel A. Elsherbini, Krishna Bharath, Kevin P. O'Brien, Kimin Jun, Han Wui Then, Mohammad Enamul Kabir, Gerald S. Pasdast, Feras Eid, Aleksandar Aleksov, Johanna M. Swan, Shawna M. Liff
  • Publication number: 20240355750
    Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.
    Type: Application
    Filed: June 28, 2024
    Publication date: October 24, 2024
    Inventors: Adel A. ELSHERBINI, Amr ELSHAZLY, Arun CHANDRASEKHAR, Shawna M. LIFF, Johanna M. SWAN
  • Publication number: 20240355725
    Abstract: An integrated circuit assembly may be fabricated having an electronic substrate, an integrated circuit device having a first surface, an opposing second surface, at least one side extending between the first surface and the second surface, and at least one through-substrate via extending into the integrated circuit device from the second surface, wherein the first surface of the integrated circuit device is electrically attached to the electronic substrate; and at least one power delivery route electrically attached to the second surface of the integrated circuit device and to the electronic substrate, wherein the at least one power delivery route is conformal to the side of the integrated circuit device and the first surface of the electronic substrate.
    Type: Application
    Filed: July 2, 2024
    Publication date: October 24, 2024
    Applicant: Intel Corporation
    Inventors: Adel Elsherbini, Feras Eid, Georgios Dogiamis, Beomseok Choi, Henning Braunisch, William Lambert, Krishna Bharath, Johanna Swan