Abstract: An auxiliary voltage generation circuit is part of a high voltage generation and regulation circuit. The auxiliary voltage generation circuit generates an auxiliary intermediate voltage that is coupled to a negative level shifting circuit to reduce the drain-source stress experienced by transistors in that circuit that are in an off state. The auxiliary voltage generation circuit also generates a logic control signal that indicates to a high voltage discharge path to perform either a slow discharge operation or a fast discharge operation.

Abstract: An auxiliary voltage generation circuit is part of a high voltage generation and regulation circuit. The auxiliary voltage generation circuit generates an auxiliary intermediate voltage that is coupled to a negative level shifting circuit to reduce the drain-source stress experienced by transistors in that circuit that are in an off state. The auxiliary voltage generation circuit also generates a logic control signal that indicates to a high voltage discharge path to perform either a slow discharge operation or a fast discharge operation.

Abstract: An improved band-gap voltage reference apparatus and method is detailed that incorporates an amplifier to provide for improved compensation and temperature stability to the voltage reference circuit by increasing the effective hFE (also called ?) of the bipolar junction transistors (BJTs) used in the band-gap voltage reference circuit. This also allows the band-gap voltage reference circuit to operated with a lower overall power usage and with lower supply voltages. Additionally, the improved band-gap voltage reference apparatus and method also allows for band-gap voltage references to be implemented in integrated circuit technologies that do not have high quality BJTs natively available in the manufacturing process of the technology.

Abstract: An auxiliary voltage generation circuit is part of a high voltage generation and regulation circuit. The auxiliary voltage generation circuit generates an auxiliary intermediate voltage that is coupled to a negative level shifting circuit to reduce the drain-source stress experienced by transistors in that circuit that are in an off state. The auxiliary voltage generation circuit also generates a logic control signal that indicates to a high voltage discharge path to perform either a slow discharge operation or a fast discharge operation.

Abstract: An improved band-gap voltage reference apparatus and method is detailed that incorporates an amplifier to provide for improved compensation and temperature stability to the voltage reference circuit by increasing the effective hFE (also called ?) of the bipolar junction transistors (BJTs) used in the band-gap voltage reference circuit. This also allows the band-gap voltage reference circuit to operated with a lower overall power usage and with lower supply voltages. Additionally, the improved band-gap voltage reference apparatus and method also allows for band-gap voltage references to be implemented in integrated circuit technologies that do not have high quality BJTs natively available in the manufacturing process of the technology.

Abstract: An improved band-gap voltage reference apparatus and method is detailed that incorporates an amplifier to provide for improved compensation and temperature stability to the voltage reference circuit by increasing the effective hFE (also called &bgr;) of the bipolar junction transistors (BJTs) used in the band-gap voltage reference circuit. This also allows the band-gap voltage reference circuit to operated with a lower overall power usage and with lower supply voltages. Additionally, the improved band-gap voltage reference apparatus and method also allows for band-gap voltage references to be implemented in integrated circuit technologies that do not have high quality BJTs natively available in the manufacturing process of the technology.

Abstract: An improved band-gap voltage reference apparatus and method is detailed that incorporates an amplifier to provide for improved compensation and temperature stability to the voltage reference circuit by increasing the effective hFE (also called &bgr;) of the bipolar junction transistors (BJTs) used in the band-gap voltage reference circuit. This also allows the band-gap voltage reference circuit to operated with a lower overall power usage and with lower supply voltages. Additionally, the improved band-gap voltage reference apparatus and method also allows for band-gap voltage references to be implemented in integrated circuit technologies that do not have high quality BJTs natively available in the manufacturing process of the technology.