Patents by Inventor Aihua (Steven) Chen

Aihua (Steven) Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6884464
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: April 26, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Publication number: 20050060256
    Abstract: A method for providing an interface for Foreign Exchange trading centered on an FX rate tile. The tile interface offers harmonized order and RFQ submission workflows. Users can also configure order and quote parameters by using input features of the tile display. The tile also serves as a flexible unit of display and order/quote creation. The tile can be resize, rearranged, torn off and joined into new windows. The above described features contribute to provide a unique harmonized, flexible, “tiled” foreign exchange trading interface.
    Type: Application
    Filed: July 2, 2004
    Publication date: March 17, 2005
    Inventors: Andrew Peterson, Lawrence Miller, Irene Eaglesfield, Suzanne Hubble, Marc LeGelebart, Tamara Sablic, Robert Sagurton, Elena Theodorou, WanHo Wah, AiHua Zhou
  • Publication number: 20050039226
    Abstract: The invention provides DNA compositions that relate to transgenic insect resistant maize plants. Also provided are assays for detecting the presence of the maize TC1507 event based on the DNA sequence of the recombinant construct inserted into the maize genome and the DNA sequences flanking the insertion site. Kits and conditions useful in conducting the assays are provided.
    Type: Application
    Filed: April 30, 2004
    Publication date: February 17, 2005
    Inventors: Eric Barbour, James Bing, Guy Cardineau, Robert Cressman, Manju Gupta, Mary Hartnett Locke, David Hondred, Joseph Keaschall, Michael Koziel, Terry Meyer, Daniel Moellenbeck, Kenneth Narva, Wilas Nirunsuksiri, Steven Ritchie, Marjorie Rudert, Craig Sanders, Aihua Shao, Steven Stelman, David Stucker, Laura Tagliani, William Van Zante
  • Publication number: 20040266123
    Abstract: One embodiment of the present invention is a method for treating silicon nitride (SixNy) films that includes electron beam treating the silicon nitride film.
    Type: Application
    Filed: April 13, 2004
    Publication date: December 30, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Zhenjiang Cui, Jun Zhao, Rick J. Roberts, Shulin Wang, Errol A. C. Sanchez, Aihua Chen
  • Patent number: 6833161
    Abstract: A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: December 21, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Shulin Wang, Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li
  • Publication number: 20040225388
    Abstract: The invention relates to a fully digitized audio system comprising a power supply and a decode and sound field effect process unit, characterized in that a digital audio signal output from the decode and sound field effect process unit is transmitted to a control and encode unit where audio and control signals are encoded, and coupled to a digital sound box through a digital transmission terminal in the control and encode unit. The invention adopts totally digitized audio signal processing according to the concept of mechatronics, solving the problem of distortions rising throughout the procedure from input, process, distribution, transmission and amplification to sounding, to ensure a controllable hi-fi output of audio signal. The audio system according to the present invention provides high fidelity, good controllability, and easiness of assembling, and is suitable for mass production of advance audio systems.
    Type: Application
    Filed: July 17, 2002
    Publication date: November 11, 2004
    Inventors: Guohua Zhang, Limin Lai, Enyi Zhan, Aihua Zhou
  • Publication number: 20040224991
    Abstract: The present invention is related to the preparation and pharmaceutical use of novel benzamide derivatives as defined in the specification of formula (I) as histone deacetylase inhibitors (HDACI), their preparations and the methods of using these compounds or their pharmaceutically acceptable salt in the treatment of cell proliferative diseases, e.g. cancer and psoriasis.
    Type: Application
    Filed: February 2, 2004
    Publication date: November 11, 2004
    Inventors: Xian-Ping Lu, Zhibin Li, Aihua Xie, Leming Shi, Boyu Li, Zhiqiang Ning, Song Shan, Tuo Deng, Weiming Hu
  • Publication number: 20040194706
    Abstract: A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
    Type: Application
    Filed: December 19, 2003
    Publication date: October 7, 2004
    Inventors: Shulin Wang, Errol Antonio C. Sanchez, Aihua Chen
  • Publication number: 20040189049
    Abstract: The present invention involves a method to produce crush zones in aluminum structures using controlled application of retrogression heat treatment. Selected areas of a tubular rail are retrogression heat treated to locally lower the tensile yield strength. As a result, during a crash event, initial deformation is localized in the crush zone enabling the crush pattern to be designed directly into the structure.
    Type: Application
    Filed: March 28, 2003
    Publication date: September 30, 2004
    Inventors: Paul E. Krajewski, Alan (Aihua) A. Luo, Susan E. Hartfield-Wunsch, Patrick J. McNamara
  • Publication number: 20040121085
    Abstract: A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.
    Type: Application
    Filed: December 20, 2002
    Publication date: June 24, 2004
    Inventors: Shulin Wang, Errol Antonio C. Sanchez, Aihua Chen
  • Patent number: 6732434
    Abstract: The present invention provides a process for forming aluminum alloy hydroformed structures for automotive vehicles at low cost. The process continuously casts molten aluminum alloy into aluminum alloy strip material preferably followed by continuously warm rolling the strip material into aluminum alloy sheet material. The sheet material is formed into one or more aluminum alloy tubes and the tubes are hydroformed into the desired automotive vehicle structure.
    Type: Grant
    Filed: April 15, 2002
    Date of Patent: May 11, 2004
    Assignee: General Motors Corporation
    Inventors: Aihua A. Luo, Anil K. Sachdev
  • Publication number: 20040086640
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Steven Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Publication number: 20040082581
    Abstract: The present invention provides substituted 1,3,5-triazine compounds as kinase inhibitors and a method for treating or ameliorating a kinase mediated disorder.
    Type: Application
    Filed: July 18, 2003
    Publication date: April 29, 2004
    Inventors: Gee-Hong Kuo, Alan DeAngelis, Aihua Wang, Yan Zhang, Stuart L. Emanuel, Steve Middleton
  • Publication number: 20040063301
    Abstract: Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
    Type: Application
    Filed: October 1, 2002
    Publication date: April 1, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher G. Quentin, Lee Luo, Aihua Chen, Xianzhi Tao
  • Patent number: 6713127
    Abstract: An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: March 30, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Janardhanan Anand Subramony, Yoshitaka Yokota, Ramaseshan Suryanarayanan Iyer, Lee Luo, Aihua Chen
  • Patent number: 6710048
    Abstract: The present invention provides pyrazine derivatives that inhibit tyrosine kinase activity. Certain pyrazine derivatives are selective inhibitors of vascular endothelial growth factor (VEGF) receptor tyrosine kinase. The present invention also provides pharmaceutical formulations containing the pyrazine derivatives and methods of use of these formulations as anti-tumor agents and to treat solid-tumor cancers, angiogenesis, diabetic retinopathy, rheumatoid arthritis, endometriosis and psoriasis.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: March 23, 2004
    Assignee: Ortho-McNeil Pharmaceutical, Inc.
    Inventors: Gee-Hong Kuo, Peter J. Connolly, Catherine Prouty, Alan DeAngelis, Aihua Wang, Linda Jolliffe, Steve Middleton, Stuart Emanuel
  • Publication number: 20040052526
    Abstract: An agile network is provided with a layered control system for maintaining a network-wide target performance parameter (e.g. power) along all end-to-end connections. A connection is controlled at the physical layer using optical control loops that have a concatenated response based on a set of loop time constants. The network is separated into gain based span loops and power based switch loops; each link has a gain profile, and requires a per-wavelength power target as the output power target for the switch loop at the start of the link. Use of achievable gain for the span loops allow to optimize the performance of the link. Use of individual achievable power targets allows each switch loop to autonomously ramp on and off channels without causing interference with existing and other ramping channels. A loop control uses a model-based rules block, to distribute control signals to an optical section encompassing a plurality of optical components.
    Type: Application
    Filed: September 16, 2002
    Publication date: March 18, 2004
    Inventors: Kevan Peter Jones, Mark Stephen Wight, Hock Gin Lim, Paul Edward Beer, Clarence Kwok-Yan Kan, Aihua Yu, Sheldon Walklin, Jingyu Zhou, Paul Po-Wan Chan, David Andrew Whittaker, Kinh Minh Pham, Robert M. Kimball, Christian Scheerer, Alan Glen Solheim
  • Patent number: 6646235
    Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater.
    Type: Grant
    Filed: October 19, 2001
    Date of Patent: November 11, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Steven Aihua Chen, Henry Ho, Michael X. Yang, Bruce W. Peuse, Karl Littau, Yu Chang
  • Patent number: 6635637
    Abstract: Cyclic oxyguanidine compounds, including compounds of Formulae I and II: wherein R1, R3-R6, R21-R26, L, Y, Z, and A are set forth in the specification, as well as hydrates, solvates or pharmaceutically acceptable salts thereof, that inhibit proteolytic enzymes such as thrombin are described. Also described are methods for preparing the compounds of Formulae I and II. The novel compounds of the present invention are potent inhibitors of proteases, especially trypsin-like serine proteases, such as chymotrypsin, trypsin, thrombin, plasmin and factor Xa. Certain of the compounds exhibit antithrombotic activity via direct, selective inhibition of thrombin, or are intermediates useful for forming compounds having antithrombotic activity.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: October 21, 2003
    Assignee: Dimensional Pharmaceuticals, Inc.
    Inventors: Aihua Wang, Tianbao Lu, Bruce Edward Tomczuk, Richard M. Soll, John Curtis Spurlino, Roger Francis Bone
  • Publication number: 20030192160
    Abstract: The present invention provides a process for forming aluminum alloy hydroformed structures for automotive vehicles at low cost. The process continuously casts molten aluminum alloy into aluminum alloy strip material preferably followed by continuously warm rolling the strip material into aluminum alloy sheet material. The sheet material is formed into one or more aluminum alloy tubes and the tubes are hydroformed into the desired automotive vehicle structure.
    Type: Application
    Filed: April 15, 2002
    Publication date: October 16, 2003
    Inventors: Aihua A. Luo, Anil K. Sachdev