Patents by Inventor Ajit P. Paranjpe

Ajit P. Paranjpe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5389153
    Abstract: A surfatron 12 is provided which includes first waveguide 32 coupled to a section of coaxial waveguide 30 to define a cavity 28 at the intersection therebetween. The coaxial waveguide 30 includes an outer cylinder 36 and an inner cylinder 34 disposed within the outer cylinder 36. Inner cylinder 34 has an end disposed proximate to a wall of first section of waveguide 32. A space 40 is defined between the end of inner cylinder 34 and the wall of waveguide 32. A discharge tube 22 is provided having a first portion disposed within inner cylinder 34 and a second portion extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32. A coil 38 is disposed around the portion of discharge tube 22 extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32.
    Type: Grant
    Filed: February 19, 1993
    Date of Patent: February 14, 1995
    Assignee: Texas Instruments Incorporated
    Inventors: Ajit P. Paranjpe, Steve S. Huang
  • Patent number: 5361137
    Abstract: A method and apparatus for measuring submicron linewidths, using diffraction gratings. A set of "fixed-linewidth variable-pitchwidth" test gratings has a number of gratings, each grating having the same linewidth but having different pitchwidths. These gratings are illuminated to form diffraction patterns. A set of peak intensities of the first or second order diffraction image from each grating is recorded. Either of these intensity values forms a curve around an extrema, which represents the intensity from a grating whose pitchwidth is equal to one-half the linewidth.
    Type: Grant
    Filed: August 31, 1992
    Date of Patent: November 1, 1994
    Assignee: Texas Instruments Incorporated
    Inventors: Thomas J. Aton, Phillip Chapados, Jr., Jimmy W. Hosch, Ajit P. Paranjpe
  • Patent number: 5249865
    Abstract: An interferonmetric temperature measurement system is described for determining the temperature of a sample. The system comprises three detectors for measuring various intensities of a beam of electromagnetic radiation reflected off the sample and circuitry for determining the temperature from the intensities. The detectors measure the intensity of the beam and two orthogonally polarized components of the beam.
    Type: Grant
    Filed: April 27, 1992
    Date of Patent: October 5, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Ajit P. Paranjpe, Steven A. Henck, Walter M. Duncan
  • Patent number: 5231334
    Abstract: A plasma source for generating a plasma in a chamber in conjunction with a radio frequency generator is described. The plasma source comprises a coil spiral, at least one insulator and at least one capacitor. The coil spiral conducts the radio frequency wave from the radio frequency generator and induces a plasma in the chamber. It comprises at least two segments. Each insulator and capacitor couple two adjacent segments of the coil spiral together.
    Type: Grant
    Filed: April 15, 1992
    Date of Patent: July 27, 1993
    Assignee: Texas Instruments Incorporated
    Inventor: Ajit P. Paranjpe
  • Patent number: 5217559
    Abstract: An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.
    Type: Grant
    Filed: December 10, 1990
    Date of Patent: June 8, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Mehrdad M. Moslehi, Ajit P. Paranjpe, Cecil J. Davis