Abstract: An information presenting apparatus includes a system confidence level calculator configured to calculate a system confidence level of autonomous driving control, an information presenter configured to present, to a driver, information on allowableness of an action other than driving, and an information presentation controller configured to control switching of a content of the information presented on the information presenter according to the system confidence level calculated by the system confidence level calculator.

Abstract: A vehicle information presenting apparatus for use in an autonomous vehicle switches driving control between autonomous driving control, in which the vehicle is driven autonomously, and manual driving control, in which the vehicle is driven manually by a driver. The vehicle information presenting apparatus includes a driving attention level estimator configured to estimate a driving attention level of the driver, and an information presentation controller configured to switch information to present to the driver according to the driving attention level of the driver estimated by the driving attention level estimator.

Abstract: A vibrator element includes a base portion, a vibrating arm extending from the base portion, a first electrode provided on the vibrating arm, a second electrode provided above the first electrode, a piezoelectric body arranged between the first electrode and the second electrode, and an insulating film arranged between the first electrode and the piezoelectric body, in which the material of the first electrode contains TiN, the material of the insulating film contains SiO2, and the material of the piezoelectric body contains AlN.

Abstract: A MEMS device is provided in which, in order to suppress generation of a gas from an inner wall of a space in which a MEMS portion is disposed, the MEMS portion is disposed in a space constituted by at least a silicon nitride film and a silicon film, the silicon film has a first hole, the first hole is filled with a metal film or a metal silicide, and an airtight structure is formed by the metal film or the metal silicide, the silicon nitride film, and the silicon film.

Abstract: A vehicle travel controller carries out automatic travel control of controlling a vehicle to travel automatically based upon travel state information of the vehicle and information on an exterior of the vehicle. An automatic/manual traveling changeover switch is capable of switching between an automatic driving mode in which the automatic travel control is carried out by the vehicle travel controller and a manual driving mode in which the driver drives the vehicle manually. A driving posture controller controls a reclining motor so that the reclining angle of the driver's seat in the automatic driving mode is larger than the reclining angle of the driver's seat in the manual driving mode.

Abstract: A MEMS structure includes: a substrate; a lower electrode disposed on the substrate; an upper electrode including a movable portion disposed facing and spaced from the lower electrode; and a reinforcing portion disposed in the upper electrode so as to extend along an extending direction of the movable portion, the reinforcing portion being composed of a material having a higher Young's modulus than the upper electrode.

Abstract: A MEMS structure includes: a substrate; a lower electrode disposed above the substrate; an upper electrode including a movable portion disposed facing and spaced from the lower electrode; and a projection projecting from a surface of the movable portion on a side facing the lower electrode, the projection being composed of a material different from that of the movable portion.

Abstract: A MEMS device is provided in which, in order to suppress generation of a gas from an inner wall of a space in which a MEMS portion is disposed, the MEMS portion is disposed in a space constituted by at least a silicon nitride film and a silicon film, the silicon film has a first hole, the first hole is filled with a metal film or a metal silicide, and an airtight structure is formed by the metal film or the metal silicide, the silicon nitride film, and the silicon film.

Abstract: A vibrator element includes a base portion, a vibrating arm extending from the base portion, a first electrode provided on the vibrating arm, a second electrode provided above the first electrode, a piezoelectric body arranged between the first electrode and the second electrode, and an insulating film arranged between the first electrode and the piezoelectric body, in which the material of the first electrode contains TiN, the material of the insulating film contains SiO2, and the material of the piezoelectric body contains AlN.

Abstract: A semiconductor device is provided in which high breakdown voltage transistors and low voltage driving transistors are formed on the same substrate. The device includes a semiconductor layer, first element isolation regions for defining a high breakdown voltage transistor forming region in the semiconductor layer, second element isolation regions including trench dielectric layers for defining a low voltage driving transistor forming region in the semiconductor layer, high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, low voltage driving transistors formed in the low voltage driving transistor forming region, and offset dielectric layers for alleviating the electric field of the high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, wherein upper ends of the offset dielectric layers are beak shaped.

Abstract: A semiconductor device is provided in which high breakdown voltage transistors and low voltage driving transistors are formed on the same substrate. The device includes a semiconductor layer, first element isolation regions for defining a high breakdown voltage transistor forming region in the semiconductor layer, second element isolation regions including trench dielectric layers for defining a low voltage driving transistor forming region in the semiconductor layer, high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, low voltage driving transistors formed in the low voltage driving transistor forming region, and offset dielectric layers for alleviating the electric field of the high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, wherein upper ends of the offset dielectric layers are beak shaped.

Abstract: A semiconductor device manufacturing method is provided including: forming a first impurity layer that becomes first wells in a high breakdown voltage transistor forming region in a semiconductor layer; forming a second impurity layer that becomes offset regions in the high breakdown voltage transistor forming region; forming the first wells and the offset regions by diffusing impurities of the first and second impurity layers by heat treating the semiconductor layer; forming element isolation regions by a trench element isolation method in the semiconductor layer, after forming the first wells and the offset regions; forming first gate dielectric layers in the high breakdown voltage transistor forming region; forming second wells in a low voltage driving transistor forming region in the semiconductor layer; forming second gate dielectric layers in the low voltage driving transistor forming region; and forming gate electrodes in the high breakdown voltage transistor forming region and the low voltage driving

Abstract: A semiconductor device is provided in which high breakdown voltage transistors and low voltage driving transistors are formed on the same substrate. The device includes a semiconductor layer, first element isolation regions for defining a high breakdown voltage transistor forming region in the semiconductor layer, second element isolation regions including trench dielectric layers for defining a low voltage driving transistor forming region in the semiconductor layer, high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, low voltage driving transistors formed in the low voltage driving transistor forming region, and offset dielectric layers for alleviating the electric field of the high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, wherein upper ends of the offset dielectric layers are beak shaped.

Abstract: A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are included in the same semiconductor layer.

Abstract: A semiconductor device having memory cells. Each of the memory cells has a word gate formed over a semiconductor substrate with a first gate insulating layer interposed, an impurity layer, and first and second control gates in the shape of sidewalls. The first and second control gates adjacent to each other with the impurity layer interposed are connected to a common contact section. The common contact section includes a first contact conductive layer, a second contact conductive layer, and a pad-shaped third contact conductive layer. The third contact conductive layer is formed over the first and second contact conductive layers.

Abstract: A fabrication method of a semiconductor device which has on the same semiconductor layer a transistor with a different high voltage gate as well as a high voltage drain and an MNOS memory transistor.

Abstract: A semiconductor device of the present invention has memory cells. Each of the memory cells includes a word gate formed over a semiconductor substrate with a first gate insulating layer interposed therebetween, an impurity layer, and first and second control gates in a shape of sidewalls. Each of the first and second control gates has a rectangular or square cross-sectional shape.

Abstract: A method of manufacturing a semiconductor device that has a high-breakdown-voltage transistor, a low-voltage driving transistor and a MONOS type memory transistor includes a step of forming a stack film that includes at least an oxide silicon layer and a nitride silicon layer over a high-breakdown-voltage transistor forming region where the high-breakdown-voltage transistor is formed, a low-voltage driving transistor forming region where the low-voltage driving transistor is formed and a MONOS type memory transistor forming region where the MONOS type memory transistor is formed in a semiconductor layer, a step of removing the stack film formed in a first gate insulating layer forming region of the high-breakdown-voltage transistor and a step of forming a first gate insulating layer in the high-breakdown-voltage transistor forming region by thermal oxidation.

Abstract: A fabrication method of a semiconductor device which has on the same semiconductor layer a transistor with a different high voltage gate as well as a high voltage drain and an MNOS memory transistor.

Abstract: A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are included in the same semiconductor layer.