Abstract: On an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

Abstract: On an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

Abstract: A Group III nitride semiconductor containing: a RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMO4 substrate, having therebetween a dissimilar film that contains a material different from the RAMO4 substrate, and has plural openings.

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.

Abstract: A RAMO4 substrate is formed from single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.

Abstract: The present invention provides a copper alloy tube for heat exchangers which is tolerable to a high operating pressure of new cooling media such as carbon dioxide and HFC-based fluorocarbons, and is excellent in fracture strength, even if the tube is thinned, and a copper alloy tube for a heat exchanger which has a composition having specified amounts of Sn and P, has an average crystal grain size of 30 ?m or less and has a high strength of 250 MPa or more of a tensile strength in the longitudinal direction of the tube improves the fracture strength as a texture in which the orientation distribution density in the Goss orientation is 4% or less.

Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Abstract: A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

Abstract: A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-xN (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the MQW active layer. The main surface of the substrate is oriented at an angle ranging from 0.25° to 0.7° with respect to a (0001) plane of a plane orientation. The composition x of the AlxGa1-xN is in a range from 0.025 to 0.04.

Abstract: A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.

Abstract: A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0?x, y, z?1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx?Gay?Inz?N crystal (0?x?, y?, z??1:x?+y?+z?=1) 106 on the AlxGayInzN crystals 104, the Alx?Gay?Inz?N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx?Gay?Inz?N crystal 106 to form one nitride semiconductor layer 120.

Abstract: An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

Abstract: A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0<W<1) well layers and GaN barrier layers are alternately deposited.