Abstract: An electrostatic adsorption member includes a dielectric member having a first surface and a second surface opposite to the first surface and formed with a through-hole penetrating from the first surface to the second surface, and a porous body provided in the through-hole and having a third surface flush with the first surface. The through-hole has a first opening apart from the first surface by a first distance in a first direction perpendicular to the first surface, and a second opening apart from the first surface by a second distance larger than the first distance in the first direction. In a plan view from the first direction, at least a portion of the first opening is inside the second opening, and the porous body has a first portion located inside the first opening, and a second portion connected to the first portion and located outside the first opening.

Abstract: An electrostatic adsorption member includes a dielectric member having a first surface and a second surface opposite to the first surface and formed with a through-hole penetrating from the first surface to the second surface, and a porous body provided in the through-hole and having a third surface flush with the first surface. The through-hole has a first opening apart from the first surface by a first distance in a first direction perpendicular to the first surface, and a second opening apart from the first surface by a second distance larger than the first distance in the first direction. In a plan view from the first direction, at least a portion of the first opening is inside the second opening, and the porous body has a first portion located inside the first opening, and a second portion connected to the first portion and located outside the first opening.

Abstract: A first semiconductor component and a second semiconductor component are attached together via an adhesion layer so that the first semiconductor component and the second semiconductor component are electrically connected with each other via a through electrode. The through electrode is formed to fill a through hole formed in the second semiconductor component and a through hole formed in a portion the adhesion layer. The through hole formed in the portion the adhesion layer is positioned between the through hole formed in the second semiconductor component and a second connection surface of a first semiconductor component through electrode.

Abstract: There is provided a wiring substrate including: a core substrate including: a first core substrate including: a plate-shaped first glass substrate; and a first through electrode formed through the first glass substrate; a second core substrate including: a plate-shaped second glass substrate; and a second through electrode formed through the second glass substrate, wherein a diameter of the second through electrode is different from that of the first through electrode; and an insulating member encapsulating the first and second core substrates, and a wiring layer formed on at least one surface of the core substrate. The first and second core substrates are arranged to be separated from each other when viewed from a top.

Abstract: According to one embodiment, there is provided a semiconductor package including: a semiconductor chip; a resin portion formed to cover the semiconductor chip; a wiring structure formed on the resin portion and electrically connected to the semiconductor chip; and a warpage preventing member provided above the resin portion to have a thermal expansion coefficient closer to that of the semiconductor chip than to that of the wiring structure.

Abstract: A semiconductor package includes a semiconductor chip including a circuit forming surface and a side surface, and a sealing insulation layer that seals the circuit forming surface and the side surface of the semiconductor chip, the sealing insulation layer having a first surface on a side of the circuit forming surface. At least one wiring layer and at least one insulation layer are formed one on top of the other on the first surface. The wiring layer formed on the first surface is electrically connected to the semiconductor chip. The insulation layer has a reinforcement member installed therein.

Abstract: A wiring substrate includes a structure in which a plurality of wiring layers are stacked through insulating layers intervening therebetween, and which has a first surface side and a second surface side, the first surface side where a semiconductor element is to be mounted, the second surface side being located at an opposite side to the first surface side, an interposer buried in an outermost one of the insulating layers located at the first surface side, and electrically connected to the semiconductor element to be mounted, and a sheet-shaped member buried in an outermost one of the insulating layers located at the second surface side, wherein, the interposer and the sheet-shaped member are disposed at symmetrical positions symmetrical each other.

Abstract: A semiconductor device includes a semiconductor chip, a core substrate, first and second insulating layers, and first and second wiring layers. Adhesiveness of the insulating layer to a metal is higher than adhesiveness of the core substrate to the metal. A through hole extends through the insulating layer in the thickness direction. A through via covers the hole wall surface of the through hole, extends in the thickness direction traversing the insulating layer, and electrically connects the first and second wiring layers.

Abstract: A semiconductor package includes: a metal plate including a first surface, a second surface and a side surface; a semiconductor chip on the first surface of the metal plate, the semiconductor chip comprising a first surface, a second surface and a side surface; a first insulating layer that covers the second surface of the metal plate; a second insulating layer that covers the first surface of the metal plate, and the first surface and the side surface of the semiconductor chip; and a wiring structure on the second insulating layer and including: a wiring layer electrically connected to the semiconductor chip; and an interlayer insulating layer on the wiring layer. A thickness of the metal plate is thinner than that of the semiconductor chip, and the side surface of the metal plate is covered by the first insulating layer or the second insulating layer.

Abstract: A metal plate covers an opening on the upper surface of a core substrate and exposes an outer edge of the upper surface of the core substrate. A conductive layer covers the lower surface of the core substrate. A semiconductor chip bonded to a first surface of the metal plate is exposed through the opening. A first insulating layer covers the upper and side surface of the metal plate and the outer edge of the upper surface of the core substrate. A second insulating layer fills the openings of the metal plate and the conductive layer and covers the outer edge of the lower surface of the core substrate, the conductive layer, and the semiconductor chip. The metal plate is thinner than the semiconductor chip. Total thickness of the conductive layer and the core substrate is equal to or larger than the thickness of the semiconductor chip.

Abstract: A wiring board has a structure where multiple wiring layers are stacked one on top of another with insulating layers interposed therebetween. A sheet-shaped member is buried in an outermost insulating layer located on a side of the structure opposite to a side on which a semiconductor element is to be mounted. The sheet-shaped member has a modulus of elasticity and a coefficient of thermal expansion which are similar to a modulus of elasticity and a coefficient of thermal expansion of the semiconductor element. The sheet-shaped member is made of a material having a modulus of elasticity and a coefficient of thermal expansion which are enough to bring respective distributions thereof into a substantially symmetric form in a direction orthogonal to a surface of the wiring board in the case where the semiconductor element is mounted.

Abstract: A first semiconductor component and a second semiconductor component are attached together via an adhesion layer so that the first semiconductor component and the second semiconductor component are electrically connected with each other via a through electrode. The through electrode is formed to fill a through hole formed in the second semiconductor component and a through hole formed in a portion the adhesion layer. The through hole formed in the portion the adhesion layer is positioned between the through hole formed in the second semiconductor component and a second connection surface of a first semiconductor component through electrode.

Abstract: A first semiconductor component and a second semiconductor component are attached together via an adhesion layer so that the first semiconductor component and the second semiconductor component are electrically connected with each other via a through electrode. The through electrode is formed to fill a through hole formed in the second semiconductor component and a through hole formed in a portion the adhesion layer. The through hole formed in the portion the adhesion layer is positioned between the through hole formed in the second semiconductor component and a second connection surface of a first semiconductor component through electrode.

Abstract: A metal plate covers an opening on the upper surface of a core substrate and exposes an outer edge of the upper surface of the core substrate. A conductive layer covers the lower surface of the core substrate. A semiconductor chip bonded to a first surface of the metal plate is exposed through the opening. A first insulating layer covers the upper and side surface of the metal plate and the outer edge of the upper surface of the core substrate. A second insulating layer fills the openings of the metal plate and the conductive layer and covers the outer edge of the lower surface of the core substrate, the conductive layer, and the semiconductor chip. The metal plate is thinner than the semiconductor chip. Total thickness of the conductive layer and the core substrate is equal to or larger than the thickness of the semiconductor chip.

Abstract: A semiconductor device includes a wiring substrate, and a semiconductor chip, wherein the wiring substrate includes a glass plate having an opening portion penetrating through a first surface of the glass plate to a second surface of the glass plate, a resin portion penetrating through the first surface to the second surface, and a through wiring penetrating through the resin portion from the first surface to the second surface to electrically connect a first wiring layer formed on a side of the first surface with a third wiring layer formed on a side of the second surface, wherein the semiconductor chip is accommodated inside the opening portion.

Abstract: A semiconductor device includes a semiconductor chip, a core substrate, first and second insulating layers, and first and second wiring layers. Adhesiveness of the insulating layer to a metal is higher than adhesiveness of the core substrate to the metal. A through hole extends through the insulating layer in the thickness direction. A through via covers the hole wall surface of the through hole, extends in the thickness direction traversing the insulating layer, and electrically connects the first and second wiring layers.

Abstract: There is provided a wiring substrate including: a core substrate including: a first core substrate including: a plate-shaped first glass substrate; and a first through electrode formed through the first glass substrate; a second core substrate including: a plate-shaped second glass substrate; and a second through electrode formed through the second glass substrate, wherein a diameter of the second through electrode is different from that of the first through electrode; and an insulating member encapsulating the first and second core substrates, and a wiring layer formed on at least one surface of the core substrate. The first and second core substrates are arranged to be separated from each other when viewed from a top.

Abstract: A semiconductor package includes: a metal plate including a first surface, a second surface and a side surface; a semiconductor chip on the first surface of the metal plate, the semiconductor chip comprising a first surface, a second surface and a side surface; a first insulating layer that covers the second surface of the metal plate; a second insulating layer that covers the first surface of the metal plate, and the first surface and the side surface of the semiconductor chip; and a wiring structure on the second insulating layer and including: a wiring layer electrically connected to the semiconductor chip; and an interlayer insulating layer on the wiring layer. A thickness of the metal plate is thinner than that of the semiconductor chip, and the side surface of the metal plate is covered by the first insulating layer or the second insulating layer.

Abstract: At least one electronic component having a plurality of terminals on one of surfaces is temporarily fixed to a surface of a first support with a first adhesive layer in such a manner that the terminal side of the electronic component faces the first support. A second support having a second adhesive layer is fixed to the electronic component in order to interpose the electronic component between the first support and the second support. The first support and the first adhesive layer are peeled. The electronic component on the second support is sealed with a sealing resin in such a manner that at least a part of the terminals of the electronic component is exposed. An insulating resin layer and a wiring layer to be electrically connected to the terminal of the electronic component are stacked on the electronic component and the sealing resin.

Abstract: A semiconductor package includes a semiconductor chip; a resin part configured to cover a side surface of the semiconductor chip; and a wiring structure formed on a circuit forming surface of the semiconductor chip and a surface of the resin part being situated at the same side as the circuit forming surface, the wiring structure being electrically connected to the semiconductor chip, wherein the resin part is formed so as to cover a part of a surface of the semiconductor chip situated at an opposite side to the circuit forming surface of the semiconductor chip.