Abstract: A surface-emitting laser element for emitting light in a direction perpendicular to a substrate, including a substrate with a normal direction of a principal plane inclining toward one direction of <111> with respect to one direction of <100> and a mesa structure formed on the substrate and having a narrowed structure with an oxide produced by oxidizing a part of a layer to be oxidized selectively, containing aluminum and surrounding an electric current passage area, wherein a cross-section of mesa structure being parallel to the substrate is parallel to a substrate surface and orthogonal to both one direction of <100> and one direction of <111> and a length in a first direction passing through a center of the electric current passage area is more than a length in a second direction parallel to a substrate surface and orthogonal to the first direction.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction.

Abstract: In a module-to-module association support system, a controller asks a management server to create an adaptor for use as an intermediary between a client module and a service module being a target to be associated with the client module. The management server is provided with a service API definition defining the specification of an API of the service module, and a device ID corresponding thereto. The management server selects the service API definition based on the device ID provided by the controller, and creates the adaptor based on the selected service API definition and the provided client API definition. The resulting adaptor is forwarded to a client. With such a configuration, a process to be executed after a change of the service module can be simplified to update an application including the client module.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: It is desirable to make the antenna wiring more efficient in the building of an RFID system. The system includes antennas and readers connected in an arbitrary manner, in which calibration tags are installed on all the antennas. By reading the calibration tags, the system automatically generates the correspondences between the access paths and antenna logical names of the antennas, to serve as antenna configuration information. While the user generates combinations of the antenna logical names of the one or more antennas to be simultaneously driven, to serve as derive sequence information. The system compares the automatically generated antenna configuration information with the user-generated driving sequence information, and if there is an inconsistency in the setting of the both, generates an antenna rewiring procedure so as to resolve the inconsistency. The antenna rewiring procedure is generated as a combination of the substitution operation of the antenna wiring.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A failure of execution of an R/W control command with respect to plural RF tags that are attached to a moving thing occurs. There are disclosed a method and apparatus for controlling an R/W (reader/writer) that performs a read/write operation on RF tags attached to a moving body. In this case, the RF tags that are attached to the moving body are detected using the R/W. A schedule that determines execution timing of a control command of the R/W that performs a data read/write operation on the RF tags in accordance with the detected RF tags is created. The R/W control command is executed with respect to the RF tags using the R/W in accordance with timing that is determined in the created schedule.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

Abstract: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0<x?1) and a layer of large refractive index of AlyGa1-yAs (0?y<x?1), the lower reflector is formed of a first lower reflector having a low-refractive index layer of AlAs an

Abstract: A regenerative braking coordination device has a braking operating member receiving an input from a driver in the form of an operation amount, an input shaft operable for transmitting the operation amount, and a braking force boosting device operable to generate a hydraulic braking pressure corresponding to the operation amount transmitted by the input shaft. The device further includes a hydraulic pressure braking device to generate a braking force and an operation amount absorber for absorbing the operation amount of the input shaft. The operation amount absorber includes a cylinder, a piston dividing the interior of the cylinder into first and second hydraulic chambers and an orifice connecting the first and second hydraulic chambers. The orifice can be in the piston or in a flow channel.

Abstract: It is desirable to make the antenna wiring more efficient in the building of an RFID system. The system includes antennas and readers connected in an arbitrary manner, in which calibration tags are installed on all the antennas. By reading the calibration tags, the system automatically generates the correspondences between the access paths and antenna logical names of the antennas, to serve as antenna configuration information. While the user generates combinations of the antenna logical names of the one or more antennas to be simultaneously driven, to serve as derive sequence information. The system compares the automatically generated antenna configuration information with the user-generated driving sequence information, and if there is an inconsistency in the setting of the both, generates an antenna rewiring procedure so as to resolve the inconsistency. The antenna rewiring procedure is generated as a combination of the substitution operation of the antenna wiring.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A vehicle braking apparatus is provided with a brake operating element that is operated by a driver, and an actuator that generates a braking force in accordance with a braking operation of the brake operating element. A controller is operatively arranged to control the actuator such that an increase in a rate of change of the braking force with respect to the braking operation by the driver is suppressed upon determining that vehicle cabin background noise is equal to or below a prescribed threshold value.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: An encoder according to the present invention is an encoder for encoding an optical wavelength-multiplexed signal compliant with optical CDMA into a code having a code pattern, including: L optical fibers 36 and 42 (where L is an integer equal to or greater than two) each having a plurality of gratings 37 to 47; and a circulator 52 for coupling the plurality of optical fibers 36 and 42. The code pattern contains time bins t1 to t3. A plurality of wavelengths ?1, ?4 and ?5 are assigned to the time bin t1. If a sum of an optical path difference in each optical fiber from the grating which reflects the optical signal of the wavelength ?1 to the grating which reflects the optical signal of the wavelength ?4 is calculated for all of the optical fibers 36 and 42, the sum equals zero.