Patents by Inventor Akihiro Itoh
Akihiro Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8970309Abstract: An atomic oscillator is disclosed, including an Alkaline metal cell, a light source illuminating a laser beam to the Alkaline metal cell, and a light detector detecting light passing through the Alkaline metal cell. The Alkaline metal cell includes a first member, a second member, a cell internal portion, and an Alkaline metal raw material. In the first member, a first glass substrate is bonded on a second surface of a first substrate where a first opening part is formed. In the second member, a second glass substrate is bonded to a fourth surface of a second substrate where a second opening part is formed. The cell internal portion is formed by the first opening part and the second opening part by bonding the first surface to the third surface. The Alkaline metal raw material is enclosed by the cell internal portion.Type: GrantFiled: July 11, 2012Date of Patent: March 3, 2015Assignee: Ricoh Company, Ltd.Inventors: Shunichi Sato, Akihiro Itoh, Yukito Sato
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Publication number: 20150011605Abstract: Provided is a novel nucleic acid molecule that is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes, in sequence from the 5? side to the 3? side: a 5? side region (Xc); an inner region (Z); and a 3? side region (Yc). The inner region (Z) is composed of an inner 5? side region (X) and an inner 3? side region (Y) that are linked to each other. The 5? side region (Xc) is complementary to the inner 5? side region (X). The 3? side region (Yc) is complementary to the inner 3? side region (Y). At least one of the inner region (Z), the 5? side region (Xc), and the 3? side region (Yc) includes the expression inhibitory sequence.Type: ApplicationFiled: June 12, 2014Publication date: January 8, 2015Applicant: BONAC CORPORATIONInventors: Tadaaki Ohgi, Hirotake Hayashi, Hisao Shirohzu, Tomohiro Hamasaki, Akihiro Itoh, Hiroshi Suzuki
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Patent number: 8927855Abstract: A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer. The n-side electrode layer consists of AgxAu1-x, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.Type: GrantFiled: October 17, 2013Date of Patent: January 6, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Tomoyuki Komori, Eiji Fujii, Akihiro Itoh
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Patent number: 8830287Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.Type: GrantFiled: June 28, 2013Date of Patent: September 9, 2014Assignee: Ricoh Company, Ltd.Inventors: Shunichi Sato, Akihiro Itoh, Hiroyoshi Shouji, Yoshinori Hayashi, Daisuke Ichii, Kei Hara, Mitsumi Fujii
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Patent number: 8818630Abstract: A vehicular vibration damping control apparatus calculates a correction torque to suppress vehicle body sprung vibration. In outputting a correction torque command to a driving/braking torque producing device, the control apparatus outputs a hunting time correction torque command smaller than a normal time correction toque command when a state in which amplitude of the correction torque is greater than or equal to a predetermined amplitude continues for a predetermined time length, and thereafter to return an output of the correction torque command from the hunting time correction torque command to the normal time correction torque command if a state in which the amplitude of the correction torque is smaller than or equal to the predetermined amplitude continues for a first predetermined time length. The frequency of performing the vibration damping control is increased by suppressing occurrence of hunting at the time of return to the normal vibration damping control.Type: GrantFiled: April 20, 2011Date of Patent: August 26, 2014Assignee: Nissan Motor Co., Ltd.Inventors: Yosuke Kobayashi, Takeshi Kimura, Yuuki Shiozawa, Mitsunori Ohta, Hiroki Sasaki, Akihiro Itoh, Masahiko Yoshizawa
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Patent number: 8809089Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.Type: GrantFiled: July 12, 2013Date of Patent: August 19, 2014Assignee: Ricoh Company, Ltd.Inventors: Hiroyoshi Shouji, Shunichi Sato, Akihiro Itoh, Kazuhiro Harasaka
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Publication number: 20140219683Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.Type: ApplicationFiled: April 4, 2014Publication date: August 7, 2014Applicant: RICOH COMPANY, LTD.Inventors: Kazuhiro Harasaka, Shunichi Sato, Masahiro Hayashi, Akihiro Itoh, Katsunari Hanaoka
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Publication number: 20140206856Abstract: The invention provides a glucoside compound, which is capable of providing a phosphoramidite, which can be produced at low cost and can produce a nucleic acid in high yield and with high purity. The glycoside compound has the formula wherein B, R1, R2, and R3 are as described herein.Type: ApplicationFiled: August 24, 2012Publication date: July 24, 2014Applicant: BONAC CORPORATIONInventors: Eriko Aoki, Hiroshi Suzuki, Akihiro Itoh
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Patent number: 8785121Abstract: Provided is a novel nucleic acid molecule that is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes, in sequence from the 5? side to the 3? side: a 5? side region (Xc); an inner region (Z); and a 3? side region (Yc). The inner region (Z) is composed of an inner 5? side region (X) and an inner 3? side region (Y) that are linked to each other. The 5? side region (Xc) is complementary to the inner 5? side region (X). The 3? side region (Yc) is complementary to the inner 3? side region (Y). At least one of the inner region (Z), the 5? side region (Xc), and the 3? side region (Yc) includes the expression inhibitory sequence.Type: GrantFiled: July 8, 2011Date of Patent: July 22, 2014Assignee: BONAC CorporationInventors: Tadaaki Ohgi, Hirotake Hayashi, Hisao Shirohzu, Tomohiro Hamasaki, Akihiro Itoh, Hiroshi Suzuki
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Patent number: 8774242Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.Type: GrantFiled: May 8, 2012Date of Patent: July 8, 2014Assignee: Ricoh Company, Ltd.Inventors: Akihiro Itoh, Kazuhiro Harasaka, Shunichi Sato, Naoto Jikutani
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Publication number: 20140171633Abstract: Provided is a novel nucleic acid molecule that can be produced easily and efficiently and can inhibit the expression of a gene. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes: a region (X); a linker region (Lx); and a region (Xc). The linker region (Lx) is linked between the regions (Xc) and (Xc). The region (Xc) is complementary to the region (X). At least one of the regions (X) and (Xc) includes the expression inhibitory sequence. The linker region (Lx) has a non-nucleotide structure including at least one of a pyrrolidine skeleton and a piperidine skeleton. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.Type: ApplicationFiled: December 19, 2013Publication date: June 19, 2014Applicant: BONAC CORPORATIONInventors: Tadaaki Ohgi, Hirotake Hayashi, Hisao Shirohzu, Tomohiro Hamasaki, Akihiro Itoh, Hiroshi Suzuki
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Publication number: 20140171486Abstract: Provided is a novel nucleic acid molecule that can be produced easily and efficiently and can inhibit the expression of a gene. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes: a region (X); a linker region (Lx); and a region (Xc). The linker region (Lx) is linked between the regions (Xc) and (Xc). The region (Xc) is complementary to the region (X). At least one of the regions (X) and (Xc) includes the expression inhibitory sequence. The linker region (Lx) has a non-nucleotide structure including at least one of a pyrrolidine skeleton and a piperidine skeleton. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.Type: ApplicationFiled: December 19, 2013Publication date: June 19, 2014Applicant: BONAC CORPORATIONInventors: Tadaaki Ohgi, Hirotake Hayashi, Hisao Shirohzu, Tomohiro Hamasaki, Akihiro Itoh, Hiroshi Suzuki
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Patent number: 8743924Abstract: In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components such that the semiconductor layer containing Al, In and P as major components is provided adjacent to the semiconductor layer that contains Al, Ga and As as major components. Further, an interface between the semiconductor layer containing Al, Ga and As as major components and the semiconductor layer containing Al, In and P as major components is coincident to a location of a node of electric field strength distribution.Type: GrantFiled: February 11, 2013Date of Patent: June 3, 2014Assignee: Ricoh Company, Ltd.Inventors: Shunichi Sato, Akihiro Itoh, Naoto Jikutani
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Patent number: 8736652Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.Type: GrantFiled: May 18, 2011Date of Patent: May 27, 2014Assignee: Ricoh Company, Ltd.Inventors: Kazuhiro Harasaka, Shunichi Sato, Masahiro Hayashi, Akihiro Itoh, Katsunari Hanaoka
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Patent number: 8735716Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.Type: GrantFiled: July 12, 2012Date of Patent: May 27, 2014Assignee: Panasonic CorporationInventors: Nobuaki Nagao, Takahiro Hamada, Akihiro Itoh
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Publication number: 20140139294Abstract: An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer.Type: ApplicationFiled: November 18, 2013Publication date: May 22, 2014Applicant: RICOH COMPANY, LTD.Inventors: Kazuhiro Harasaka, Kazuhiko Adachi, Hiroyoshi Shouji, Akihiro Itoh, Shunichi Sato, Shinji Satoh
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Publication number: 20140130975Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.Type: ApplicationFiled: July 12, 2013Publication date: May 15, 2014Applicant: RICOH COMPANY, LTD.Inventors: Hiroyoshi Shouji, Shunichi Sato, Akihiro Itoh, Kazuhiro Harasaka
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Patent number: 8705585Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.Type: GrantFiled: April 19, 2013Date of Patent: April 22, 2014Assignee: Ricoh Company, Ltd.Inventors: Shunichi Sato, Akihiro Itoh, Satoru Sugawara, Hiroyoshi Shouji
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Publication number: 20140096818Abstract: A solar cell has a condenser lens and a solar cell element, the solar cell element including an n-type InGaAs layer, an n-type GaAs layer, an n-type InGaP layer, the first InGaAs peripheral part having a thickness (d2), and a width (w2), the second InGaAs peripheral part having a thickness (d3), and a width (w3), the first GaAs peripheral part having a thickness (d5), and a width (w4), the second GaAs peripheral part a thickness (d6), and a width (w5), the first InGaP peripheral part having a thickness (d8), and a width (w6), the second InGaP peripheral part having a thickness (d9), and a width (w7), the following inequation set being satisfied: 1 nm?(d2, d3, d5, and d6)?4 nm, 1 nm?(d8 and d9)?5 nm, 100 nm?(w2, w3, w4, w5, w6, and w7), the InGaAs center part having a thickness (w1), a window layer has a range S irradiated by sunlight having a width (w8); w8?w1.Type: ApplicationFiled: December 11, 2013Publication date: April 10, 2014Applicant: Panasonic CorporationInventors: Akio MATSUSHITA, Akihiro ITOH, Tohru NAKAGAWA, Hidetoshi ISHIDA
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Patent number: 8691782Abstract: Provided is a novel nucleic acid molecule that can be produced easily and efficiently and can inhibit the expression of a gene. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes: a region (X); a linker region (Lx); and a region (Xc). The linker region (Lx) is linked between the regions (Xc) and (Xc). The region (Xc) is complementary to the region (X). At least one of the regions (X) and (Xc) includes the expression inhibitory sequence. The linker region (Lx) has a non-nucleotide structure including at least one of a pyrrolidine skeleton and a piperidine skeleton. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.Type: GrantFiled: July 28, 2011Date of Patent: April 8, 2014Assignee: BONAC CorporationInventors: Tadaaki Ohgi, Hirotake Hayashi, Hisao Shirohzu, Tomohiro Hamasaki, Akihiro Itoh, Hiroshi Suzuki