Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface provided with a bump and a second surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of adhering a protection tape having an adhesive layer to the first surface and embedding. The element chip manufacturing method includes a thinning process of grinding the second surface in a state where the protection tape is adhered to the first surface and thinning the substrate, after the bump embedding process, a mask forming process of forming a mask in the second surface and exposes the dividing regions, after the thinning process, a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape.

Abstract: Provided is a method of manufacturing a semiconductor chip, the method comprising: preparing a plurality of semiconductor chips, each of which has a surface to which a BG tape is stuck, and a rear surface to which a DAF is stuck, and which are held spaced from each other by the BG tape and the DAF, exposing the DAF between semiconductor chips that are adjacent to each other when viewed from the surface side, by stripping the BG tape from the surface of each of the plurality of semiconductor chips, etching the DAF that is exposed between the semiconductor chips that are adjacent to each other, by irradiating the plurality of semiconductor chips held on the DAF, with plasma.

Abstract: An exemplary dehydrogenation device for generating a hydrogen gas through dehydrogenation according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing catalyst capable of reducing protons, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB?xO3-?. The A element is an alkaline-earth metal and is contained in a range of 0.4<a<0.9, where the a value represents a mole fraction of this element, and the B? element is a trivalent group 3 or group 13 element and is contained in a range of 0.2<x<0.6, where the x value represents a mole fraction of this element.

Abstract: A semiconductor chip manufacturing method includes preparing a semiconductor wafer including a front surface on which a bump is exposed, a rear surface located at a side opposite to the front surface, a plurality of element regions in each of which the bump is formed, and a dividing region defining each of the element regions, forming a mask which covers the bump and has an opening exposing the dividing region on the surface of the semiconductor wafer by spraying liquid which contains raw material of the mask along the bump by a spray coating method, and singulating the semiconductor wafer by exposing the surface of the semiconductor wafer to first plasma and etching the dividing region, which is exposed to the opening, until the rear surface is reached in a state where the bump is covered by the mask.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface having an exposed bump and a second surface opposite to the first surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of embedding at least a head top part of the bump into the adhesive layer, a mask forming process of forming a mask in the second surface. The method for manufacturing the element chip includes a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape, a placement process of placing the substrate on a stage provided inside of a plasma processing apparatus through the holding tape, after the mask forming process and the holding process.

Abstract: An element chip manufacturing method includes a preparation process of preparing a substrate which includes a first surface provided with a bump and a second surface and includes a plurality of element regions defined by dividing regions, a bump embedding process of adhering a protection tape having an adhesive layer to the first surface and embedding. The element chip manufacturing method includes a thinning process of grinding the second surface in a state where the protection tape is adhered to the first surface and thinning the substrate, after the bump embedding process, a mask forming process of forming a mask in the second surface and exposes the dividing regions, after the thinning process, a holding process of arranging the first surface to oppose a holding tape supported on a frame and holding the substrate on the holding tape.

Abstract: A plasma processing method includes a mounting process of mounting a holding sheet holding a substrate in a stage provided in a plasma processing apparatus, and a fixing process of fixing the holding sheet to the stage. The plasma processing method further includes a determining process of determining whether or not a contact state of the holding sheet with the stage is good or bad after the fixing process, and a plasma etching process of etching the substrate by exposing a surface of the substrate to plasma on the stage, in a case in which the contact state is determined to be good in the determining process.

Abstract: The method for manufacturing an element chip includes a mounting step and a plasma dicing step. In the mounting step, a semiconductor substrate with flexibility, which has a first main surface and a second main surface located at an opposite side of the first main surface, which has a plurality element regions and a dividing region for defining the element regions, and on which a mask for covering the first main surface in the element region and for exposing the first main surface in the dividing region is formed, is mounted on a stage. In the plasma dicing step, the semiconductor substrate is diced into a plurality of element chips including the element; region by exposing the first main surface side of the semiconductor substrate to plasma on the stage and etching from the first main surface side to the second main surface while forming a groove on the dividing region.

Abstract: A plasma processing method includes an attaching process of attaching a resin film to a first main surface of a substrate which is provided with the first main surface and a second main surface on an opposite side of the first main surface and a patterning process of forming a mask, which includes an opening exposing a region to be processed of the substrate, by patterning the resin film. The plasma processing method includes a first plasma process of generating first plasma of first gas in a depressurized atmosphere including the first gas, exposing the mask to the first plasma, and reducing a void between the mask and the first main surface. The plasma processing method includes a second plasma process of generating second plasma from second gas in atmosphere including the second gas, exposing the region to be processed exposed from the opening to the second plasma, and etching the region to be processed.

Abstract: A fastening component is a molded article of a mixture in which microfibrillated cellulose fibers are dispersed in a thermoplastic resin, wherein the thermoplastic resin has a melting point of between 150 and 200° C., and wherein when the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100 mass %, the mass % of the cellulose fibers included in the mixture is greater than 20 mass % and less than 60 mass %. When the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100%, the mass % of the cellulose fibers included in the mixture is preferably equal to or greater than 30 mass % and equal to or less than 50 mass %.

Abstract: A fastening component is a molded article of a mixture in which microfibrillated cellulose fibers are dispersed in a thermoplastic resin, wherein the thermoplastic resin has a melting point of between 150 and 200° C., and wherein when the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100 mass %, the mass % of the cellulose fibers included in the mixture is greater than 20 mass % and less than 60 mass %. When the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100%, the mass % of the cellulose fibers included in the mixture is preferably equal to or greater than 30 mass % and equal to or less than 50 mass %.

Abstract: An exemplary organic hydride conversion device for generating a hydrogen gas through organic hydride conversion according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB?xO3-x. The A element is an alkaline-earth metal and is contained in a range of 0.4<a<0.9, where the a value represents a mole fraction of this element, and the B? element is a trivalent group 3 or group 13 element and is contained in a range of 0.2<x<0.6, where the x value represents a mole fraction of this element.

Abstract: An exemplary organic hydride conversion device for generating a hydrogen gas through organic hydride conversion according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB?xO3-x. The A element is an alkaline-earth metal and is contained in a range of 0.4<a<0.9, where the a value represents a mole fraction of this element, and the B? element is a trivalent group 3 or group 13 element and is contained in a range of 0.2<x<0.6, where the x value represents a mole fraction of this element.

Abstract: An exemplary dehydrogenation device for generating a hydrogen gas through dehydrogenation according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing catalyst capable of reducing protons, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB?xO3-?. The A element is an alkaline-earth metal and is contained in a range of 0.4<a<0.9, where the a value represents a mole fraction of this element, and the B? element is a trivalent group 3 or group 13 element and is contained in a range of 0.2<x<0.6, where the x value represents a mole fraction of this element.

Abstract: A fastening component is a molded article of a mixture in which microfibrillated cellulose fibers are dispersed in a thermoplastic resin, wherein the thermoplastic resin has a melting point of between 150 and 200° C., and wherein when the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100 mass %, the mass % of the cellulose fibers included in the mixture is greater than 20 mass % and less than 60 mass %. When the total mass % of the thermoplastic resin and the cellulose fibers is set to be 100%, the mass % of the cellulose fibers included in the mixture is preferably equal to or greater than 30 mass % and equal to or less than 50 mass %.

Abstract: A method is presented for stably, highly, and efficiently producing a three-dimensional molded article of a fiber-reinforced composite material having a three-dimensional shape, uniform quality, and free from wrinkles by press molding a plurality of prepregs cut out in a predetermined shape and also to a molded article.

Abstract: A production method of granular epoxy resin includes an epoxy resin preparing step of preparing an epoxy resin which is solid at ordinary temperature by reaction between a phenol compound and epihalohydrin; a purifying processing step of refining the prepared epoxy resin which is solid at ordinary temperature so that the total content of compounds having a molecular weight of 200 or less is 0.28% by mass or less of the entire epoxy resin; and a pulverizing step of pulverizing the refined epoxy resin obtained by the purifying processing step under conditions so as not to make the total content of compounds having a molecular weight of 200 or less exceeding 0.3% by mass, wherein the epoxy resin which is solid at ordinary temperature prepared by the epoxy resin preparing step is mainly composed of at least one selected from oligomers represented by the following general formula (1) and oligomers represented by the following general formula (2).

Abstract: The present invention relates to an epoxy compound, represented by a general formula (I), which is solid at ordinary temperature, has extremely low melt viscosity and has excellent curing property and which can provide a cured product which is excellent in mechanical strength, heat resistance, and moisture resistance. It also relates to a preparation method of the epoxy compound, an epoxy resin composition, and a cured product thereof. The epoxy compound is represented by the following general formula (I): (wherein R1-R10 each represent hydrogen atom or alkyl group having 1-6 carbon atoms, and n represents an integer of 0 or more).

Abstract: An epoxy compound, represented by a general formula (I) is obtained by reacting an anthrahydroquinone compound having a following general formula (II) with epihalohydrin. (wherein R1-R10 each represent hydrogen atom or alkyl group having 1-6 carbon atoms, and n represents an integer of 0 or more, and wherein A1, A2 each represent hydrogen atom or alkali metal atom, R1-R10 each represent hydrogen atom or alkyl group having 1-6 carbon atoms.

Abstract: A granular epoxy resin is made by pulverizing an epoxy resin which is solid at ordinary temperature and can exhibit excellent fluidity during molding because of its low melt viscosity in which the total content of components having a molecular weight of 500 or less among components of n1=0 in the following general formula (1) and/or components of n2=0 in the following general formula (2) is 50% by mass or more of the entire epoxy resin, or, the total content of components having a molecular weight 400 or less among components of n1=0 in the following general formula (1) and/or components of n2=0 in the following general formula (2) is 20% by mass or more of the entire epoxy resin. The content of low molecular weight compounds having a molecular weight 200 or less in the granular epoxy resin is 0.3% by mass or less.