Patents by Inventor Akihiro Yokota

Akihiro Yokota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200326237
    Abstract: An optical measuring device includes a light measurement unit, an acceleration sensor for detecting the acceleration of the optical measuring device, a storage for storing reference data obtained from the light measurement unit by measuring light from a reference object at a first timing and storing the acceleration detected by the acceleration sensor as history information, a first determination unit for determining whether the result of comparison between measurement data obtained from the light measurement unit by measuring light from the reference object at a second timing later than the first timing and the reference data satisfies a first malfunction condition, a second determination unit for determining whether the acceleration included in the history information satisfies a second malfunction condition, and an output unit for outputting that the optical measuring device malfunctions when the first malfunction condition and the second malfunction condition are satisfied.
    Type: Application
    Filed: April 10, 2017
    Publication date: October 15, 2020
    Inventors: Koji YAMAMOTO, Masahiko SAKIMOTO, Naoki SAGISAKA, Akihiro OKAYAMA, Satoshi YOKOTA, Norimasa KUBOTA
  • Patent number: 10763087
    Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: September 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shuichi Takahashi, Takaharu Miyadate, Norinao Takasu, Etsuji Ito, Akihiro Yokota, Naohiko Okunishi
  • Patent number: 10651012
    Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: May 12, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Etsuji Ito, Shinji Himori
  • Publication number: 20200126759
    Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Takanori BANSE, Joji TAKAYOSHI, Shinya MORIKITA, Naohiko OKUNISHI
  • Patent number: 10546723
    Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: January 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Takanori Banse, Joji Takayoshi, Shinya Morikita, Naohiko Okunishi
  • Patent number: 10539122
    Abstract: Plasma which is supplied from a supply passage (1) is accelerated with a Hall electric field (E) which is generated through interaction of electrons (e?) emitted from a cathode (3), a radial direction magnetic field (Bd), and an electric field (Ex).
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: January 21, 2020
    Assignees: MITSUBISHI HEAVY INDUSTRIES, LTD., NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Takuya Yamazaki, Hirofumi Shimizu, Akihiro Sasoh, Shigeru Yokota, Shota Harada, Teruaki Baba
  • Publication number: 20190376185
    Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 12, 2019
    Inventors: Akihiro Yokota, Kazuki Moyama, Koji Maruyama
  • Patent number: 10498202
    Abstract: The manufacturing method for a rotor includes steps of: applying an adhesive to a first surface of a magnet material member that becomes a permanent magnet after magnetization, the adhesive being applied such that a total thickness of the magnet material member and the adhesive is less than a radial width of a magnet insertion aperture; disposing a rotor core such that an axial direction thereof is horizontal, and inserting the magnet material member into a magnet insertion aperture that is positioned vertically uppermost among the magnet insertion apertures so as to orient the adhesive vertically upward; positioning each of the magnet material members by pressing the magnet material member against an inner wall surface on an outer circumferential side of the magnet insertion aperture after inserting the magnet material member into each of the magnet insertion apertures; and curing the adhesive after the magnet material member is positioned.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: December 3, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hirohisa Yokota, Akihiro Yamamura, Yoshinobu Sugimoto, Shinji Sano
  • Publication number: 20190244794
    Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
  • Publication number: 20190164726
    Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 30, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Gen TAMAMUSHI, Naoyuki SATOH, Akihiro YOKOTA, Shinji HIMORI
  • Patent number: 10297428
    Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: May 21, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano
  • Publication number: 20190148155
    Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 16, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinji KUBOTA, Kazuya NAGASEKI, Akihiro YOKOTA, Gen TAMAMUSHI
  • Publication number: 20190140160
    Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0?x?1, ?0.5<a?0 or 0<a<0.5, ?0.5<b?0 or 0<b?0.5, and ?0.5<c?0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.
    Type: Application
    Filed: February 24, 2017
    Publication date: May 9, 2019
    Inventors: Akira YOSHIKAWA, Yuui YOKOTA, Yuji OHASHI, Kei KAMADA, Tetsuo KUDO, Kenji INOUE, Yasuhiro SHOJI, Yu IGARASHI, Mototaka ARAKAWA, Shunsuke KUROSAWA, Akihiro YAMAJI
  • Publication number: 20190096635
    Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.
    Type: Application
    Filed: September 25, 2018
    Publication date: March 28, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Takanori BANSE, Joji TAKAYOSHI, Shinya MORIKITA, Naohiko OKUNISHI
  • Publication number: 20190096639
    Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.
    Type: Application
    Filed: September 25, 2018
    Publication date: March 28, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shuichi TAKAHASHI, Takaharu MIYADATE, Norinao TAKASU, Etsuji ITO, Akihiro YOKOTA, Naohiko OKUNISHI
  • Patent number: 9978566
    Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: May 22, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano, Etsuji Ito, Kazuya Nagaseki
  • Publication number: 20170162367
    Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.
    Type: Application
    Filed: December 14, 2016
    Publication date: June 8, 2017
    Inventors: Akihiro YOKOTA, Etsuji ITO, Shinji HIMORI
  • Publication number: 20170103877
    Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.
    Type: Application
    Filed: October 7, 2016
    Publication date: April 13, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO, Etsuji ITO, Kazuya NAGASEKI
  • Patent number: 9390943
    Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: July 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuya Nagaseki, Etsuji Ito, Akihiro Yokota, Shinji Himori, Shoichiro Matsuyama
  • Publication number: 20150332898
    Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
    Type: Application
    Filed: April 29, 2015
    Publication date: November 19, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO