Abstract: A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.

Abstract: One disclosed plasma processing system includes a chamber, a substrate support, a plasma generator, and first and second electric magnet assemblies. The substrate support is disposed in the chamber. A center of a substrate on the substrate support is positioned on a central axis of the chamber. The plasma generator is configured to generate a plasma in the chamber. The first electric magnet assembly includes one or more first annular coils and is disposed on or above the chamber and configured to generate a first magnetic field in the chamber. The second electric magnet assembly includes one or more second annular coils and is configured to generate a second magnetic field in the chamber. The second magnetic field reduces the intensity of the first magnetic field in the center of the substrate on the substrate support.

Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.

Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.

Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.

Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.

Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.