Abstract: A semiconductor device includes a laminated substrate formed by laminating a plurality of semiconductor substrates, a concave part formed in the laminated substrate, and a semiconductor element mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.

Abstract: In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.

Abstract: A light transmissive cover for a device comprising: a cover member of light transmissive material; and a junction member joined to the cover member, the junction member being a member used to be joined to the body of the device and having a light interrupting film on the inner surface thereof. A device provided with a light transmissive cover, the device being provided with a cover member of light transmissive material joined to the body of device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member is also disclosed. In addition, methods for manufacturing them disclosed.

Abstract: In a semiconductor device 100, a light emitting device 102 is mounted on a substrate 101. A light reflection preventing film 130 for preventing a reflection of a light is formed on an upper surface of the light emitting device 102. Moreover, a plate-shaped cover 103 formed of a glass having a light transparency is disposed above the light emitting device 102, and a light reflection preventing film 140 for preventing a reflection of a light is also formed on an upper surface of the cover 103.

Abstract: The invention provides a light-emitting device 10 including an light-emitting element 12 and a substrate 11 where the light-emitting element 12 is arranged, characterized in that a housing part 28 housing the light-emitting element 12 and having a shape that is tapered upward from the substrate 11 and a metal frame 15 surrounding the light-emitting element 12 and including the side face 28A of the housing part 28 made into an almost mirror-polished surface are provided on the substrate 11.

Abstract: A light emitting apparatus, includes: a light emitting device accommodating body, which has a recessed portion wherein a light emitting device is accommodated; a wiring pattern, which is provided for the light emitting device accommodating body 11 and is electrically connected to the light emitting device; a light transmitting substrate, which is mounted on the light emitting device accommodating body and completely closes the recessed portion; and a phosphor-containing, ultraviolet curing resin, which is so deposited that, opposite to the light emitting device accommodating body, the face of the light transmitting member is covered.

Abstract: The optical device 10 includes a light source 13, a mirror element 12 including a mirror 36 for reflecting light emitted from the light source 13 in a predetermined direction, and a mirror element housing body 11 that accommodates the mirror element 12 as well as seals a space D where the mirror element 12 is accommodated, characterized in that the light source 13 is provided inside the mirror element housing body 11.

Abstract: According to a sealed structure 60 constituted by anodically bonding a silicon board 20 and a glass plate 40, an upper opening of a recessed portion 22 is sealed in an airtight state by the glass plate 40 by bonding an upper face of a wall portion 26 to the glass plate 40. A voltage applying pattern 70 is formed to surround a light transmitting region to which an optical conversion element 24 is opposed. Further, the voltage applying pattern 70 functions as a cathode pattern applied with a voltage by being brought into contact with a lower face of the cathode plate 50.

Abstract: A semiconductor device 10 has such a structure that a plurality of through electrodes 30 is formed on a substrate 20 and each of terminals of light emitting devices (LEDs) 40 is electrically connected to each of the through electrodes 30 via a bump 50 on a lower surface side. In the semiconductor device 10, moreover, a partition wall 80 for surrounding a mounting region of each of the light emitting devices 40 is formed on the substrate 20. The partition wall 80 is formed by laminating a metal film (Cu) using a thin film forming method such as a plating method. Furthermore, the partition wall 80 is formed to be opposed close to each of side surfaces of the light emitting devices 40 and is provided to surround each of the light emitting devices 40.

Abstract: A method of producing a light emitting apparatus including a light emitting element, a light emitting element housing having a recess for housing the light emitting element, and a translucent substrate placed on the light emitting element housing is disclosed. The disclosed method includes a fluorescent-substance-containing resin forming step of forming a fluorescent-substance-containing resin on a first side of the translucent substrate which first side is opposite to a second side of the translucent substrate which second side faces the recess. In the fluorescent-substance-containing resin forming step, luminance and chromaticity of light that is emitted from the light emitting element and then transmitted by the fluorescent-substance-containing resin are measured and a thickness of the fluorescent-substance-containing resin is adjusted based on the measured luminance and chromaticity so that light emitted from the light emitting apparatus attains the specified luminance and chromaticity.

Abstract: A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting element (15), and a light emitting element container (11) having a concave section (20) for containing the light emitting element (15). The concave section (20) includes a side surface (20A) and a bottom surface (20B) almost orthogonal to the side surface (20A). The light emitting device further includes a conductive paste layer (17) formed of a conductive paste in which metal particles are dispersed in a solution, and the conductive paste layer (17) includes a slanting surface (17A) on the side surface (20A) and the bottom surface (20B).

Abstract: A method of manufacturing a light emitting apparatus including a light emitting device and a light emitting device installing body having a concave part for installing the light emitting device therein is disclosed. The method includes the steps of a) forming a coating of plural fluorophor particles covering the light emitting device installed in the concave part, and b) forming a transparent resin covering the plural fluorophor particle coating. Step b) includes a step of performing illumination with the light emitting device so that the light emitted from the light emitting apparatus has a predetermined luminance and chromaticity.

Abstract: There is provided a semiconductor device mounted with a light emitting element, which can be downsized easily, improve light emitting efficiency and be formed easily, and a method for manufacturing the semiconductor device effectively. The semiconductor device includes a substrate, a light emitting element mounted on the substrate by flip chip bonding, a sealing structure sealing the light emitting element and a phosphor film which is formed on an internal surface of the sealing structure. The sealing structure includes a blocking portion which is formed integrally with the substrate so as to surround the light emitting element on the substrate and functions as a reflector that reflects a light emitted from the light emitting element and a cover portion which is arranged on the top of the blocking portion and is bonded to the blocking portion.

Abstract: A semiconductor device made by mounting a light emitting element on a substrate, where an optically-transparent cover with a flat plate shape is installed on the light emitting element and a groove part for suppressing reflection of light emission of the light emitting element is formed in the cover.

Abstract: A semiconductor device made by mounting alight emitting element in a substrate, characterized in that an optically-transparent cover with a flat plate shape is installed on the light emitting element and a fluorescent substance film is formed on the cover.

Abstract: A light emitting diode includes an LED element, a fluorescent material provided so as to cover the LED element, a substrate on which the LED element is mounted and made of ceramics or silicon, and a pair of electrode pads which are electrically connected to the LED element on the substrate.

Abstract: In an electronic parts packaging structure of the present invention, an electronic parts is mounted or formed on a silicon circuit substrate having a structure in which wiring layers on both sides thereof are connected to each other through a through electrode, and a protruded bonding portion which is ring-shaped and is made of glass, of a seal cap having a structure in which a cavity is constituted by the protruded bonding portion, is anodically bonded to a bonding portion of the silicon circuit substrate, thus, the electronic parts is hermetically sealed in the cavity of the sealing cap.

Abstract: A disclosed semiconductor device comprises a substrate, an element on the substrate and a sealing structure for sealing the element. The sealing structure has a structure such that a partition wall made of a metallic material formed on the substrate by a plating method so as to surround the element and a cap portion disposed on the partition wall are bonded via a bonding layer made of an inorganic material.

Abstract: A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes a first step that mounts plural semiconductor elements on a first substrate, a second step that inspects each of the semiconductor elements mounted on the first substrate, a third step that divides the first substrate by dicing so that a divided first substrate includes at least one semiconductor element, and a fourth step that mounts the divided first substrate in which at least one semiconductor element is mounted on a second substrate.