Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.

Abstract: A method for generating electric power with use of a solar cell includes steps of: (a) preparing the solar cell including a condensing lens and a solar cell element, wherein the following inequation set (I) is satisfied: d2<d1, d3<d1, 1 nanometer?d2?4 nanometers, 1 nanometer?d3?4 nanometers, 100 nanometers?w2, and 100 nanometers?w3 . . . (I); and (b) irradiating a region S which is included in the surface of the p-type window layer through the condensing lens with light in such a manner that the following inequation (II) is satisfied so as to generate a potential difference between the n-side electrode (110) and the p-side electrode (109): w4?w1 . . . (II).

Abstract: A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

Abstract: A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d2<d1, d3<d1, nanometer?d2?4 nanometers, 1 nanometer?d3?4 nanometers, d5<d4, d6<d4, 1 nanometer?d5?5 nanometers, 1 nanometer?d6?5 nanometers, 100 nanometers?w2, 100 nanometers?w3, 100 nanometers?w4, and 100 nanometers?w5. . . (I); and (b) irradiating a region S which is included in the surface of the p-type window layer through the condensing lens with light to satisfy the following equation (II) in order to generate a potential difference between the n-side electrode and the p-side electrode: w6?w1. . . (II).

Abstract: The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

Abstract: A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d2<d1, d3<d1, 1 nanometer?d2?4 nanometers, 1 nanometer?d3?4 nanometers, d5<d4, d6<d4, 1 nanometer?d5?5 nanometers, 1 nanometer?d6?5 nanometers, 100 nanometers?w2, 100 nanometers?w3, 100 nanometers?w4, and 100 nanometers?w5 . . . (I); and (b) irradiating a region S which is included in the surface of the p-type window layer through the condensing lens with light to satisfy the following equation (II) in order to generate a potential difference between the n-side electrode and the p-side electrode: w6?w1 . . . (II).

Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.

Abstract: The purpose of the present invention is to provide a solar cell with higher conversion efficiency. The method comprises steps of: (a) preparing the solar cell comprising a condensing lens (101) and a solar cell element (102), wherein the following inequation set (I) is satisfied: d2<d1,d3<d1,1 nanometer?d2?4 nanometers,1 nanometer?d3?4 nanometers,100 nanometers?w2,and 100 nanometers?w3??(I); and (b) irradiating a region S which is included in the surface of the p-type window layer (105) through the condensing lens (101) with light in such a manner that the following inequation (II) is satisfied so as to generate a potential difference between the n-side electrode (110) and the p-side electrode (109): w4?w1??(II).

Abstract: A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

Abstract: The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.

Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.

Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.

Abstract: A polyimide obtained by reacting a tetracarboxylic acid component with a diamine component containing a diamine compound represented by the following general formula (1): wherein, A represents a biphenylene group which may be substituted with an alkyl group having up to 4 carbon atoms.

Abstract: A polarization switching/variable directivity antenna according to the present invention includes a ground conductor plate 12 on a surface of a dielectric substrate 11, and has a radiation element 13, a directivity switching element 15, and polarization switching elements 16 provided on the ground conductor plate 12 side of the dielectric substrate 11. The radiation element 13 includes a first slot 17a formed by removing a loop-like portion from the ground conductor plate 12. The directivity switching element 15 includes a second slot 17b formed by removing a loop-like portion from the ground conductor plate 12 and directivity switching switches 18. The polarization switching elements 16 includes a third slot 17c formed by removing a linear-shaped portion from the ground conductor plate 12 and polarization switching switches 19a to 19d. Through control of the directivity switching switches 18, switching of a maximum gain direction of radiation directivity of the antenna is realized.

Abstract: The present invention relates to a process for preparing a 3-substituted thiophene represented by the formula (2): wherein R represents a cyano group, a formyl group, a carboxyl group, a hydrocarbyloxycarbonyl group which may have a substituent(s) or an acyl group which may have a substituent(s), which comprises reacting a vinyl compound represented by the formula (1): RCH?CHY??(1) wherein R has the same meaning as defined above, and Y represents a leaving group, and an ?-mercaptoacetaldehyde or a multimer thereof.

Abstract: A polarization switching/variable directivity antenna according to the present invention includes a ground conductor plate 12 on a surface of a dielectric substrate 11, and has a radiation element 13, a directivity switching element 15, and polarization switching elements 16 provided on the ground conductor plate 12 side of the dielectric substrate 11. The radiation element 13 includes a first slot 17a formed by removing a loop-like portion from the ground conductor plate 12. The directivity switching element 15 includes a second slot 17b formed by removing a loop-like portion from the ground conductor plate 12 and directivity switching switches 18. The polarization switching elements 16 includes a third slot 17c formed by removing a linear-shaped portion from the ground conductor plate 12 and polarization switching switches 19a to 19d. Through control of the directivity switching switches 18, switching of a maximum gain direction of radiation directivity of the antenna is realized.

Abstract: A polarization switching/variable directivity antenna according to the present invention includes a radiation conductor plate 12 on a front face, and a ground conductor plate 14 on a rear face, of a dielectric substrate 11. At least one directivity switching element and at least two polarization switching elements are provided within the ground conductor plate 14 on the rear face. The directivity switching element includes a first slot which is formed by a removing a loop-like portion from the ground conductor plate 14 and at least two directivity switching switches (22a to 22d). Each polarization switching element includes a first slot which is formed by removing a loop-like portion from the ground conductor plate 14 and at least one polarization switching switch (23a to 23d).

Abstract: A polarization switching/variable directivity antenna according to the present invention includes a radiation conductor plate 12 on a front face, and a ground conductor plate 14 on a rear face, of a dielectric substrate 11. At least one directivity switching element and at least two polarization switching elements are provided within the ground conductor plate 14 on the rear face. The directivity switching element includes a first slot which is formed by a removing a loop-like portion from the ground conductor plate 14 and at least two directivity switching switches (22a to 22d). Each polarization switching element includes a first slot which is formed by removing a loop-like portion from the ground conductor plate 14 and at least one polarization switching switch (23a to 23d).

Abstract: A 2-(N-methyl-N-methanesulfonylamino)pyrimidine compound of the formula (3): [R is a hydrocarbyl group], is prepared by the steps of: (I) reacting an isobutyrylacetate ester with 4-fluorobenzaldehyde and urea in the presence of a protonic compound and a metal salt; (II) oxidizing the reaction product of the step (I); (III) reacting the oxidation product of the step (II) with an organic sulfonyl halide or an organic sulfonyl anhydride; and (IV) reacting the reaction product of the step (III) with N-methyl-N-methanesulfonamide.