Abstract: A first semiconductor die includes a first substrate, first semiconductor devices, first dielectric material layers having a first silicon oxide surface as an uppermost surface and forming first metal interconnect structures. A second semiconductor die includes a second substrate, second semiconductor devices, and second dielectric material layers forming second metal interconnect structures. A handle substrate is attached to a topmost surface of the second semiconductor die. The second substrate is thinned, and a second silicon oxide surface is provided as a bottommost surface of the second semiconductor die. The second semiconductor die is bonded to the first semiconductor die by inducing oxide-to-oxide bonding between the second silicon oxide surface and the first silicon oxide surface. The handle substrate is detached, and inter-die connection via structures are formed through the second substrate and the bonding interface to contact the first metal interconnect structures.

Abstract: A vertically alternating stack of insulating layers and dielectric spacer material layers is formed over a semiconductor substrate. The vertically alternating stack is patterned into a first alternating stack located at a center region of a memory die and a second alternating stack that laterally encloses the first alternating stack. Memory stack structures are formed through the first alternating stack, and portions of the dielectric spacer material layers in the first alternating stack are replaced with electrically conductive layers while maintaining the second alternating stack intact. At least one metallic wall structure is formed through the second alternating stack. An edge seal assembly is provided, which includes at least one vertical stack of metallic seal structures. Each vertical stack of metallic seal structures vertically extends contiguously from a top surface of the semiconductor substrate to a bonding-side surface of the memory die, and includes a respective metallic wall structure.

Abstract: A first semiconductor die includes a first substrate, first semiconductor devices, first dielectric material layers having a first silicon oxide surface as an uppermost surface and forming first metal interconnect structures. A second semiconductor die includes a second substrate, second semiconductor devices, and second dielectric material layers forming second metal interconnect structures. A handle substrate is attached to a topmost surface of the second semiconductor die. The second substrate is thinned, and a second silicon oxide surface is provided as a bottommost surface of the second semiconductor die. The second semiconductor die is bonded to the first semiconductor die by inducing oxide-to-oxide bonding between the second silicon oxide surface and the first silicon oxide surface. The handle substrate is detached, and inter-die connection via structures are formed through the second substrate and the bonding interface to contact the first metal interconnect structures.

Abstract: A bonded assembly includes a memory die bonded to a support die. The memory die contains at least one three-dimensional array of memory elements, memory-die dielectric material layers, and memory-die bonding pads. The support die contains at least one peripheral circuitry including complementary metal-oxide-semiconductor (CMOS) devices and configured to generate control signals for, and receive sense signals from, the at least one three-dimensional array of memory elements and a functional module and configured to provide a functionality that is independent of operation of the at least one three-dimensional array of memory elements. The functional module may include an error correction code (ECC) module, a memory module configured to interface with an external processor module located outside of the memory die, a microprocessor unit module, a wireless communication module, and/or a system level controller module.

Abstract: A first semiconductor die is provided, which includes a first substrate, first semiconductor devices, first interconnect-level dielectric material layers, first metal interconnect structures, and first bonding pads. A second semiconductor die is provided, which includes a semiconductor-on-insulator (SOI) substrate, second semiconductor devices, second interconnect-level dielectric material layers, second metal interconnect structures, and second bonding pads. The second bonding pads are bonded to the first bonding pads. A bulk substrate layer of the SOI substrate is removed exposing an insulating material layer of the SOI substrate, which may be retained or also removed. An external bonding pad is electrically connected to a node of the second semiconductor devices.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: Three-dimensional memory devices include structures that induce a vertical tensile stress in vertical semiconductor channels to enhance charge carrier mobility. Vertical tensile stress may be induced by a laterally compressive stress applied by stressor pillar structure. The stressor pillar structures can include a stressor material such as a dielectric metal oxide material, silicon nitride, thermal silicon oxide or a semiconductor material having a greater lattice constant than that of the channel. Vertical tensile stress may be induced by a compressive stress applied by electrically conductive layers that laterally surround the vertical semiconductor channel, or by a stress memorization technique that captures a compressive stress from sacrificial material layers. Vertical tensile stress can be generated by a source-level pinning layer that prevents vertical expansion of the vertical semiconductor channel.

Abstract: A first semiconductor die includes a first substrate, first semiconductor devices, first dielectric material layers having a first silicon oxide surface as an uppermost surface and forming first metal interconnect structures. A second semiconductor die includes a second substrate, second semiconductor devices, and second dielectric material layers forming second metal interconnect structures. A handle substrate is attached to a topmost surface of the second semiconductor die. The second substrate is thinned, and a second silicon oxide surface is provided as a bottommost surface of the second semiconductor die. The second semiconductor die is bonded to the first semiconductor die by inducing oxide-to-oxide bonding between the second silicon oxide surface and the first silicon oxide surface. The handle substrate is detached, and inter-die connection via structures are formed through the second substrate and the bonding interface to contact the first metal interconnect structures.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a source-level sacrificial layer overlying a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory stack structures including a respective vertical semiconductor channel and a respective memory film are formed through the alternating stack. A source-level cavity is formed by removing the source-level sacrificial layer. Semiconductor pillar structures may be used to provide mechanical support to the alternating stack during formation of the source-level cavity. A source-level semiconductor material layer can be formed in the source-level cavity. The source-level semiconductor material layer adjoins bottom end portions of the vertical semiconductor channels and laterally surrounds the semiconductor pillar structures.

Abstract: A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.

Abstract: A first semiconductor die is provided, which includes a first substrate, first semiconductor devices, first interconnect-level dielectric material layers, first metal interconnect structures, and first bonding pads. A second semiconductor die is provided, which includes a semiconductor-on-insulator (SOI) substrate, second semiconductor devices, second interconnect-level dielectric material layers, second metal interconnect structures, and second bonding pads. The second bonding pads are bonded to the first bonding pads. A bulk substrate layer of the SOI substrate is removed exposing an insulating material layer of the SOI substrate, which may be retained or also removed. An external bonding pad is electrically connected to a node of the second semiconductor devices.

Abstract: A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.

Abstract: A first semiconductor die is provided, which includes a first substrate, first semiconductor devices, first interconnect-level dielectric material layers, first metal interconnect structures, and first bonding pads. A second semiconductor die is provided, which includes a semiconductor-on-insulator (SOI) substrate, second semiconductor devices, second interconnect-level dielectric material layers, second metal interconnect structures, and second bonding pads. The second bonding pads are bonded to the first bonding pads. A bulk substrate layer of the SOI substrate is removed exposing an insulating material layer of the SOI substrate, which may be retained or also removed. An external bonding pad is electrically connected to a node of the second semiconductor devices.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a carrier substrate. Memory stack structures vertically extend through the alternating stack. Each memory stack structure includes a respective vertical semiconductor channel and a respective memory film. A pass-through via structure vertically extends through a dielectric material portion that is adjacent to the alternating stack. The memory die can be bonded to a logic die containing peripheral circuitry for supporting operations of memory cells within the memory die. A distal end of each of the vertical semiconductor channels is physically exposed by removing the carrier substrate. A source layer is formed directly on the distal end each of the vertical semiconductor channels. A backside bonding pad or bonding wire is formed to be electrically connected to the pass-through via structure.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a carrier substrate. Memory stack structures vertically extend through the alternating stack. Each memory stack structure includes a respective vertical semiconductor channel and a respective memory film. A pass-through via structure vertically extends through a dielectric material portion that is adjacent to the alternating stack. The memory die can be bonded to a logic die containing peripheral circuitry for supporting operations of memory cells within the memory die. A distal end of each of the vertical semiconductor channels is physically exposed by removing the carrier substrate. A source layer is formed directly on the distal end each of the vertical semiconductor channels. A backside bonding pad or bonding wire is formed to be electrically connected to the pass-through via structure.

Abstract: A bonded assembly includes a memory die including a three-dimensional memory array located on a first single crystalline semiconductor substrate, and a logic die including a peripheral circuitry located on a second single crystalline semiconductor substrate and bonded to the memory die. The three-dimensional memory array includes word lines and bit lines. The logic die includes field effect transistors having semiconductor channels configured to flow electrical current along a channel direction that is parallel to the bit lines or word lines. Different crystallographic orientations are used for the first and second single crystalline semiconductor substrates. The crystallographic orientations of the first single crystalline semiconductor substrate are selected to minimize stress deformation of the memory chip, while the crystallographic orientations of the second single crystalline semiconductor substrate are selected to maximize device performance of the peripheral circuitry.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and word lines located over a substrate, memory stack structures extending through the alternating stack and containing a respective vertical semiconductor channel and a respective memory film, drain select gate electrodes located over the alternating stack, extending along a first horizontal direction, and laterally spaced apart along a second horizontal direction, and a dielectric cap layer located between adjacent drain select gate electrodes. An air gap is located between adjacent drain select gate electrodes in the dielectric cap layer.

Abstract: A bonded assembly includes a memory die bonded to a support die. The memory die contains at least one three-dimensional array of memory elements, memory-die dielectric material layers, and memory-die bonding pads. The support die contains at least one peripheral circuitry including complementary metal-oxide-semiconductor (CMOS) devices and configured to generate control signals for, and receive sense signals from, the at least one three-dimensional array of memory elements and a functional module and configured to provide a functionality that is independent of operation of the at least one three-dimensional array of memory elements. The functional module may include an error correction code (ECC) module, a memory module configured to interface with an external processor module located outside of the memory die, a microprocessor unit module, a wireless communication module, and/or a system level controller module.

Abstract: A vertically alternating stack of insulating layers and dielectric spacer material layers is formed over a semiconductor substrate. The vertically alternating stack is patterned into a first alternating stack located at a center region of a memory die and a second alternating stack that laterally encloses the first alternating stack. Memory stack structures are formed through the first alternating stack, and portions of the dielectric spacer material layers in the first alternating stack are replaced with electrically conductive layers while maintaining the second alternating stack intact. At least one metallic wall structure is formed through the second alternating stack. An edge seal assembly is provided, which includes at least one vertical stack of metallic seal structures. Each vertical stack of metallic seal structures vertically extends contiguously from a top surface of the semiconductor substrate to a bonding-side surface of the memory die, and includes a respective metallic wall structure.

Abstract: Memory dies configured for multi-stacking within a bonded assembly may be provided without using through-substrate vias that extend through semiconductor substrates. A first memory die may be provided by forming interconnect-side bonding pads on a three-dimensional memory device that overlies a semiconductor substrate. A support die including a peripheral circuitry is boned to the interconnect-side bonding pads. The semiconductor substrate is removed, and array-side bonding pads are formed on an opposite side of the interconnect-side bonding pads. Electrically conductive paths that do not pass through any semiconductor material portion are formed between the interconnect-side bonding pads and the array-side bonding pads, thereby avoiding costly formation of through-substrate via structures that extend through any semiconductor substrate. A second memory die may be bonded to the first memory die to provide stacking of multiple memory dies.