Patents by Inventor Akira Ikegami
Akira Ikegami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150357155Abstract: There is provided a charged particle beam apparatus that includes a trajectory monitoring unit which is disposed above an objective lens (14) and which includes an optical element (12) having a lens action and a trajectory correcting deflector (10). An applied voltage and an excitation current of the optical element (12) are set to zero after a trajectory correction of a primary charged particle beam (30). Accordingly, the lens action and an aberration of the optical element (12) have no influence on resolution.Type: ApplicationFiled: January 21, 2014Publication date: December 10, 2015Inventors: Hideto DOHI, Akira IKEGAMI, Hideyuki KAZUMI
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Publication number: 20150294833Abstract: In order to provide a charged particle beam apparatus capable of high resolution measurement of a sample at any inclination angle, a charged particle beam apparatus for detecting secondary charged particles (115) generated by irradiating a sample (114) with a primary charged particle beam (110) is provided with a beam tilt lens (113) having: a yoke magnetic path member (132) and a lens coil (134) to focus the primary charged particle beam (110) on the sample (114); and a solenoid coil (133) configured to arrange the upper end on the side surface of the yoke magnetic path member (132) and arrange the bottom end between the tip end of the pole piece of the yoke magnetic path member (132) and the sample (114) in order to arbitrarily tilt the primary charged particle beam (110) on the sample (114).Type: ApplicationFiled: October 21, 2013Publication date: October 15, 2015Applicant: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Akira Ikegami, Hideto Dohi, Momoyo Enyama, Tomoyasu Shojo
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Patent number: 8835844Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.Type: GrantFiled: February 23, 2010Date of Patent: September 16, 2014Assignee: Hitachi, Ltd.Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
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Patent number: 8766182Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: GrantFiled: June 21, 2013Date of Patent: July 1, 2014Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8729491Abstract: The present invention provides a charged particle beam apparatus which is provided with a tilting deflector which is disposed between a charged particle source and an objective lens and tilts a charged particle beam, wherein a first optical element includes an electromagnetic quadrupole which generates dispersion to suppress the dispersion which is generated by deflection by the tilting deflector, and a second optical element is composed of a deflector for deflecting the charged particle beam which enters the first optical element or an electromagnetic quadrupole which causes the charged particle beam to generate a dispersion different from the dispersion generated by the first optical element.Type: GrantFiled: March 7, 2013Date of Patent: May 20, 2014Assignee: Hitachi High-Technologies CorporationInventors: Hideto Dohi, Akira Ikegami, Hideyuki Kazumi
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Publication number: 20140021366Abstract: The present invention provides a charged particle beam apparatus which is provided with a tilting deflector which is disposed between a charged particle source and an objective lens and tilts a charged particle beam, wherein a first optical element includes an electromagnetic quadrupole which generates dispersion to suppress the dispersion which is generated by deflection by the tilting deflector, and a second optical element is composed of a deflector for deflecting the charged particle beam which enters the first optical element or an electromagnetic quadrupole which causes the charged particle beam to generate a dispersion different from the dispersion generated by the first optical element.Type: ApplicationFiled: March 7, 2013Publication date: January 23, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hideto Dohi, Akira Ikegami, Hideyuki Kazumi
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Publication number: 20140001359Abstract: As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.Type: ApplicationFiled: June 19, 2013Publication date: January 2, 2014Applicant: Hitachi High-Technologies CorporationInventors: Makoto EZUMI, Satoru IWAMA, Junichi KAKUTA, Takahiro SATO, Akira IKEGAMI
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Publication number: 20130284921Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: ApplicationFiled: June 21, 2013Publication date: October 31, 2013Inventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8487253Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: November 18, 2011Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Patent number: 8487250Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: GrantFiled: August 7, 2012Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8481935Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: GrantFiled: July 25, 2011Date of Patent: July 9, 2013Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi
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Patent number: 8481934Abstract: As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.Type: GrantFiled: May 14, 2011Date of Patent: July 9, 2013Assignee: Hitachi High-Technologies CorporationInventors: Makoto Ezumi, Satoru Iwama, Junichi Kakuta, Takahiro Sato, Akira Ikegami
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Publication number: 20120298863Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Applicant: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Patent number: 8274048Abstract: In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.Type: GrantFiled: June 25, 2010Date of Patent: September 25, 2012Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Hideyuki Kazumi, Koichiro Takeuchi, Atsushi Kobaru, Seiko Oomori
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Patent number: 8263934Abstract: In a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged, a voltage is applied to a sample such that a charged particle beam does not reach the sample (referred to as “mirror state”) when the charged particle beam is applied toward the sample. Information is detected, relating to a potential on the sample using signals obtained by the voltage application.Type: GrantFiled: December 18, 2007Date of Patent: September 11, 2012Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Publication number: 20120061566Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: Hitachi High-Technologies CorporationInventors: Minoru YAMAZAKI, Akira IKEGAMI, Hideyuki KAZUMI, Manabu YANO, Kazunari ASAO, Takeshi MIZUNO, Yuki OJIMA
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Patent number: 8080790Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: February 25, 2009Date of Patent: December 20, 2011Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Publication number: 20110278454Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: ApplicationFiled: July 25, 2011Publication date: November 17, 2011Applicant: Hitachi High-Technologies CorporationInventors: Akira IKEGAMI, Minoru YAMAZAKI, Hideyuki KAZUMI, Koichiro TAKEUCHI, HIsaya Murakoshi
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Publication number: 20110215243Abstract: As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.Type: ApplicationFiled: May 14, 2011Publication date: September 8, 2011Inventors: Makoto EZUMI, Satoru Iwama, Junichi Kakuta, Takahiro Sato, Akira Ikegami
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Patent number: 7989768Abstract: A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.Type: GrantFiled: August 8, 2008Date of Patent: August 2, 2011Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi