Patents by Inventor Akira Ikegami

Akira Ikegami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050161600
    Abstract: The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.
    Type: Application
    Filed: March 11, 2005
    Publication date: July 28, 2005
    Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
  • Publication number: 20050070429
    Abstract: The present invention provides a photocatalyst material, which can comprise a photocatalyst with an excellent adherence to a substrate and a high photocatalytic activity, and a production method thereof. The photocatalyst material (20) obtained by reacting crystal nuclei with a sol solution containing an organic metallic compound or the like and then carrying out gelation, solidification and heat treatment has a structure where more than one basic structures (10) are fixed to the surface of the substrate (1). The basic structure consists of abase portion (2) comprising crystal nuclei fixed to the surface of the substrate (1) and a photocatalyst crystalline body (3), which connects to and is extended from the base portion (2) and has a columnar structure having a hollow portion (5) formed therein. A cylindrical substrate may be used for the substrate (1). The above photocatalytic activity is further enhanced by the formation of an interior-exposing structure (8) in a shell portion (4).
    Type: Application
    Filed: June 14, 2002
    Publication date: March 31, 2005
    Inventors: Azuma Ruike, Takeshi Kudo, Yuko Nakamura, Kazuhito Kudo, Fumie Kawanami, Akira Ikegami
  • Publication number: 20040211899
    Abstract: The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.
    Type: Application
    Filed: February 10, 2004
    Publication date: October 28, 2004
    Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
  • Patent number: 5196915
    Abstract: In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 .mu.m. Generation of a thermal stress can be suppressed and the electroconductive particles themselves form isotropic electroconductive passages by such dispersion, and the semiconductor devices can have a distinguished electroconductivity. Preferable boride of a metal is LaB.sub.6, which gives distinguished resistor characteristics.
    Type: Grant
    Filed: November 17, 1989
    Date of Patent: March 23, 1993
    Assignees: Hitachi, Ltd., Hitachi Chemical Company, Ltd.
    Inventors: Osamu Ito, Tadamichi Asai, Toshio Ogawa, Mitsuru Hasegawa, Akira Ikegami, Yoshishige Endoh, Michio Ootani, Katsuo Ebisawa
  • Patent number: 5016089
    Abstract: A substrate for hybrid IC which comprises a substrate, a thick film resistor containing glass, formed on the substrate, and a thick film conductor at the terminal of the thick film resistor, where a means for preventing diffusion of the glass from the thick film resistor into the thick film conductor is provided between the thick film resistor and the thick film conductor has a stable resistance as a thick film microresistor and is applied to various uses such as cellular radio communication system.
    Type: Grant
    Filed: January 4, 1989
    Date of Patent: May 14, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Mituru Fujii, Tadamichi Asai, Toshio Ogawa, Osamu Ito, Akira Ikegami, Mitsuru Hasegawa, Takao Kobayashi, Teizo Tamura
  • Patent number: 4873022
    Abstract: The present invention provides an electronic circuit component having a ceramic base and more particularly to a conductive paste for circuit film and an electronic circuit component having a copper film circuit of 10 .mu.m of less in film thickness formed from said conductive paste and a method for making the electronic circuit component.The characteristic of the present invention resides in a conductive paste comprising 100 parts by weight of copper powder of 1 .mu.m or less in average particle size, 0.01-4 parts by weight of at least one of S, Te and Se and 1-10 parts by weight of a frit glass as a binder.Further, there is provided an electronic circuit component having a copper film circuit containing 0.005-2 parts by weight of at least one of S, Te and Se and an effective amount of a glass as a binder for 100 parts by weight of copper which is produced by forming a circuit pattern of said conductive paste on an insulating base by flexo-printing method or the like and then firing the pattern.
    Type: Grant
    Filed: December 30, 1987
    Date of Patent: October 10, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Toshio Ogawa, Mituru Fujii, Tadamichi Asai, Akira Ikegami, Hiroshi Ohtsu, Kazuhiko Ato
  • Patent number: 4816949
    Abstract: The present invention relates to a magnetic head in which a magnetic metal film comprising a Co-containing amorphous alloy and a crystallizable glass of the PbO-B.sub.2 O.sub.3 -ZnO system as a solder glass are used. The magnetic head of the present invention has about 2 times higher recording density than the conventional one as a magnetic head for floppy disks and hard disks because an amorphous alloy is used. Since a crystallizable glass is used as the glass, there can be obtained a magnetic head having a high strength and superior humidity resistance and reliability.
    Type: Grant
    Filed: September 9, 1987
    Date of Patent: March 28, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Seiichi Yamada, Takashi Naitoh, Takashi Namekawa, Akira Ikegami, Ryoo Gotoo, Toshikazu Nishiyama
  • Patent number: 4718999
    Abstract: An air-fuel ratio in the lean range is detected by measuring a limiting current when oxygen diffused to a first electrode is pumped to a second electrode via a solid electrolyte. A stoichiometric air-fuel ratio is detected from electromotive force between first and third electrodes when oxygen is pumped from the first electrode to the third electrode. The invention is characterized by use of such three electrodes. Furthermore, an air-fuel ratio in a rich range is detected by either sending oxygen from the first electrode to the third electrode via the solid electrolyte and measuring a current when the electromotive force between the first and third electrodes is controlled to be constant, or measuring a current when the air-fuel ratio range is judged as "rich" from this electromotive force and the polarity of the impressed voltage at the time of lean detection is reversed.
    Type: Grant
    Filed: August 9, 1985
    Date of Patent: January 12, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Seiko Suzuki, Masayuki Miki, Takao Sasayama, Toshitaka Suzuki, Nobuo Sato, Sadayasu Ueno, Akira Ikegami
  • Patent number: 4603008
    Abstract: Disclosed herein is a critical temperature sensitive resistor material which comprises 60 to 90% by weight of VO.sub.2 and 40 to 10% by weight of RuO.sub.2. This material exhibits hysteresis of resistance that decreases remarkably over a temperature range in which the resistance varies greatly, and is hence used for measuring the temperature maintaining a high precision.
    Type: Grant
    Filed: June 27, 1985
    Date of Patent: July 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Hideo Arima, Akira Ikegami, Yasuji Kamata
  • Patent number: 4587040
    Abstract: A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound oxide thermistor, and mixing and kneading the resulting thermistor powder with glass powder and oxide powder of Ru for adjusting a resistance.
    Type: Grant
    Filed: February 28, 1979
    Date of Patent: May 6, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Teruo Mozume, Hideo Arima, Akira Ikegami
  • Patent number: 4586143
    Abstract: A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.
    Type: Grant
    Filed: January 28, 1983
    Date of Patent: April 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Masayoshi Kaneyasu, Takanobu Noro, Hideo Arima, Mitsuko Ito, Shoichi Iwanaga, Nobuo Sato, Akira Ikegami, Tokio Isogai
  • Patent number: 4547625
    Abstract: A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO.sub.2, 13-25 wt. % of B.sub.2 O.sub.3, 5-13 wt. % of Al.sub.2 O.sub.3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na.sub.2 O and K.sub.2 O and (2) 70-10 wt. % of a silica glass, is provided.
    Type: Grant
    Filed: July 7, 1983
    Date of Patent: October 15, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Hirayoshi Tanei, Akira Ikegami, Nobuyuki Sugishita
  • Patent number: 4490429
    Abstract: The multilayer circuit board is constituted of an inorganic insulating material such as a crystallizable glass, crystalline oxide or noncrystallized glass; a conductive material such as a metal or a mixture of a metal with noncrystallized glass; a resistor material consisting of a mixture of a conductive material with the crystallizable glass or noncrystallized glass; and a dielectric material consisting of a mixture of a barium titanate-other oxide mixture with the noncrystallized glass or crystallizable glass, of a lead-containing perovskite type oxide or of a lead-containing laminar bismuth oxide, said board has a multilayer structure wherein a first insulating layer; a first resistor circuit or alternatively first capacitor circuit or alternatively first resistor-capacitor circuit; a second insulating layer; a second resistor circuit or alternatively second capacitor circuit or alternatively second resistor-capacitor circuit are superposed in this order, provided that the second insulating layer has a thr
    Type: Grant
    Filed: July 16, 1982
    Date of Patent: December 25, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Nobuyuki Sugishita, Akira Ikegami
  • Patent number: 4481813
    Abstract: A dew sensor of direct current type and resistance-lowering type with increasing humidity for quick and sharp detection of dewing is provided, which comprises a pair of counterposed electrodes, humidity-sensitive layer of insulating porous metal oxide with a porosity of 20 to 60% provided on and between the counterposed electrodes, and an organic polymer coating layer having a thickness of 0.05 to 2 .mu.m provided on the humidity-sensitive layer.
    Type: Grant
    Filed: October 27, 1982
    Date of Patent: November 13, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Hirayoshi Tanei, Shoichi Iwanaga, Akira Ikegami, Hiroshi Otsu, Hiromi Isonae
  • Patent number: 4457161
    Abstract: A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.
    Type: Grant
    Filed: April 7, 1981
    Date of Patent: July 3, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Shoichi Iwanaga, Nobuo Sato, Akira Ikegami, Tokio Isogai, Takanobu Noro, Hideo Arima
  • Patent number: 4424251
    Abstract: A thick-film multi-layer wiring board in which the thick-film resistor provided in the inner layer is coated with a glass material selected from (a) and (b) below:(a) crystallized glass which is crystallized at 850.degree. C. or above, and(b) amorphous glass having a softening temperature of 750.degree. C. or above and composed of glass and at least one refractory oxide selected from Al.sub.2 O.sub.3 and SiO.sub.2.
    Type: Grant
    Filed: July 28, 1981
    Date of Patent: January 3, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Sugishita, Akira Ikegami
  • Patent number: 4386387
    Abstract: A porcelain composition comprising Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3, PbTiO.sub.3 and Pb(Yb.sub.1/2 Nb.sub.1/2)O.sub.3 preferably within the range as defined by closed area of A-B-C-D-A in the accompanying triangular diagram can give a sintered product by sintering at a temperature as low as 1000.degree. C. or lower. The resulting sintered product has a high relative dielectric constant and a small dielectric loss tangent.
    Type: Grant
    Filed: November 16, 1981
    Date of Patent: May 31, 1983
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Hirayoshi Tanei, Akira Ikegami, Hideo Arima, Tokio Isogai, Kiyoshi Kawabata
  • Patent number: 4361597
    Abstract: A sensor for detecting a fluid flow velocity or flow amount with high precision and high reliability is made by applying a conductor paste comprising platinum powder and an organic vehicle to the outer surface of a fine inorganic insulating tube, followed by drying and firing, thereby forming a platinum film, processing the platinum film into a spiral band form by laser application, inserting a lead wire into the insulating tube, applying a platinum conductor paste to between the spiral platinum band and the lead wire, followed by drying and baking, thereby connecting the spiral platinum band film to the lead wire.
    Type: Grant
    Filed: January 27, 1981
    Date of Patent: November 30, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Arima, Mituko Ito, Akira Ikegami, Sadayasu Ueno, Kanemasa Sato, Yutaka Nishimura
  • Patent number: 4347166
    Abstract: A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.
    Type: Grant
    Filed: February 22, 1979
    Date of Patent: August 31, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Hideo Arima, Teruo Mozume, Akira Ikegami, Tokio Isogai, Ichiro Tsubokawa
  • Patent number: 4308571
    Abstract: A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.
    Type: Grant
    Filed: March 26, 1980
    Date of Patent: December 29, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Hirayoshi Tanei, Akira Ikegami, Noriyuki Taguchi, Katsuo Abe, Hiroshi Ohtsu, Tokio Isogai