Abstract: A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.

Abstract: A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y compound semiconductor where 0.ltoreq.x<1 and 0.ltoreq.y.ltoreq.1 excluding ranges of 1.2y-2.2x.gtoreq.1, 1.3y-3.9x.gtoreq.1, x.gtoreq.0, and y.ltoreq.1 by an n-type cladding layer and a p-type cladding layer from opposite sides.

Abstract: A semiconductor device using interference effects of electron waves passing through a multichannel, wherein the multichannel is formed by a Dirac-delta-doped layer. A method of manufacturing a semiconductor device comprising the steps of: selectively forming a region of a predetermined crystallographic orientation onto a semiconductor substrate; and alternately growing the first semiconductor layer and the second semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer onto the region of the predetermined crystallographic orientation by a vapor-phase growth method so as to have a convex shape in a manner such that an area of an upper layer is smaller. A semiconductor device in which a channel portion comprising a zigzag fine line is provided between a source and a drain.

Abstract: In a variable frequency power source unit, a series circuit of a contactless semiconductor switching element and a resistor is provided in parallel to a d.c. smoothing capacitor, and a control circuit is provided for receiving a signal for turning on the switching element selectively at any time after the power source is interrupted, thereby discharging the electric charge on the d.c. smoothing capacitor.

Abstract: A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

Abstract: An organic solid electrolyte and an electrochromic device using the electrolyte are disclosed. The organic solid electrolyte comprises in combination a monosaccharide represented by the general formula: (CH.sub.2 O)n wherein n is an integer of 5 to 7, or a derivative thereof, as at least part of a substrate, and a salt. The electrochromic device is manufactured by interposing the organic solid electrolyte between a transparent electrode having an electrochromic substance deposited thereon and a counter electrode.

Abstract: A ridge or groove is formed on a major surface of a semiconductor substrate which is formed on a first electrode and whose major surface having a ridge or groove is slanted to a <110> crystal axis direction from a {001} crystal plane. A first semiconductor layer is formed on the semiconductor substrate, then a semiconductor function layer deviating from a {111} B crystal plane is formed on the first semiconductor layer, then a second semiconductor layer is formed on the semiconductor function layer and then a second electrode is formed on the second semiconductor layer. The ridge or groove extends to the <110> crystal axis direction, and at least one of the first semiconductor layer, the semiconductor function layer and the second semiconductor layer includes phosphorus.

Abstract: A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a rod-shaped semiconductor portion extending in one direction; a prism-shaped semiconductor portion covering side faces of the rod-shaped semiconductor portion and extending in the one direction; and one or more source electrodes and one or more drain electrodes electrically connected to opposite ends of the prism-shaped semiconductor portion. Channels extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof. Alternatively, the prism-shaped semiconductor portion has a twisted structure about an axis extending in the one direction, and channels each having a twisted structure extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof.

Abstract: Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the electron waves; characterized in that the gate electrode has the construction of a capacitor.

Abstract: A method of producing a corrugated metal sheeting including a flat metal sheet and a corrugated metal sheet joined to each other, which sheeting is used to produce a carrier or honeycomb structure for carrying catalytic agents used for purifying exhaust gases from, for example, an internal combustion engine of an automobile. In the method, the flat and corrugated metal sheets are brought together so that corrugations of the corrugated metal sheet are successively brought into contact with the flat metal sheet in such a manner that the corrugated metal sheet is freely movable to thereby release resilient stresses therefrom, and a laser beam is incident on a contact line between the flat metal sheet and each of the corrugations of the corrugated metal sheet, to thereby weld them to each other.

Abstract: A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.

Abstract: Method and apparatus for detecting vertical and horizontal deformations of leads of a semiconductor device by illuminating the leads with a planar light beam and determining relative positions of the planar light beam on the leads on the basis of distribution of light rays reflected from the leads. Different lead deformations can be detected with one and the same mechanism within a short time. By applying the invention to a semiconductor device mounting apparatus, a single detector can be employed in common both for the detection of the semiconductor device position and the detection of reflections of the planar beam.

Abstract: Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the electron waves; characterized in that the gate electrode has the construction of a capacitor.

Abstract: A fine pattern formation using an electron beam induced resist, and use of the resist in making semiconductor devices are disclosed. Collimated electron beam is irradiated and scanned along a desired pattern on a layer on which a resist layer of a desired pattern is deposited under an atmosphere containing a starting material layer for the resist. The resist thus deposited is partially removed by reactive ion etching to remove the skirt like portion of the resist layer, or totally removed by reactive ion etching during or after processing by using the resist layer as a processing mask. Since the resist layer width is determined by a diameter of the collimated electron beam, line width of less than hundred .ANG. can be directly drawn. There are also disclosed processes using the resist layer in manufacturing semiconductor devices.

Abstract: A method of making a quantum interference semiconductor device comprising the steps of forming a first semiconductor layer on a semi-insulating semiconductor substrate, forming a semi-insulating second semiconductor layer on the first semiconductor layer, forming a metal film so as to form a gate electrode on the second semiconductor layer, forming a first opening by selectively removing the metal film to form the gate electrode, forming a mask on the first opening and etching until midway in the film thickness direction of the semi-insulative second semiconductor layer by anitropic etching through said first opening and subsequently forming an etching until an upper surface of the semiconductor substrate by isotropic etching occurs so as to form a second opening into the semi-insulative second semiconductor layer and the first semiconductor layer which is continuous with the first opening portion and forming a cathode from the first semiconductor layer and a blocker made of the second semiconductor layer.

Abstract: In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which is produced on the substrate from the raw material gas is formed, wherein a pressure of the raw material gas is set to 10.sup.-7 to 10.sup.-5 Torr, an accelerating voltage of the charged particle beam is set to 0.5 to 6 kV, and a beam current of the charged particle beam is set to 10.sup.-13 to 10.sup.-7 A. Thus, a resist pattern of an ultrafine width can be stably formed in a relatively short time.

Abstract: A heat insulator made of shape memory polymer foam which has good moldability and changes greatly in elastic modulus above and below its glass transition point, and a heat insulator as mentioned above in which the polymer foam is polyurethane produced by prepolymer process from a composition containing a blowing agent, said composition being composed of a difunctional diisocyanate, a difunctional polyol, and a difunctional chain extender containing active hydrogen in a molar ratio of 2.00-1.10:1.00:1.00-0.10, said polyurethane containing approximately equal amounts of NCO groups and OH groups at the terminals of the molecular chains and having a glass transition point of -50.degree. to 60.degree. C. and crystallinity of 3 to 50 wt %.

Abstract: Disclosed is a pharmaceutical having circulation ameliorating effect and antiulcer effect containing a prostaglandin I.sub.2 analogue represented by the formula shown below or a non-toxic salt of its salt or a cyclodextrin inclusion compound thereof as the effective ingredient: ##STR1## wherein R.sup.1 represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms or a phenyl group; A represents a pentyl group, a cyclopentyl group, a cyclohexyl group, a 1-methyl-3-hexynyl group, a 2-methyl-3-hexynyl group, a 1-methylhexyl group, a 2-phenethyl group, a 1,1-dimethylpentyl group, a 2-methylpentyl group, a 1-cyclohexylethyl group, a 2-methylhexyl group, a 1-methyl-3-pentynyl group or 1 2,6-dimethyl-5-heptenyl group; the double bond between the carbon atoms at 4- and 5-positions is E or Z or a mixture thereof, the asymmetric center in the substituent represented by A is R-configuration or S-configuration or a mixture thereof.

Abstract: A control method for brushless DC motor having a rotor, a plurality of magnetic poles and coils of a plurality of phases involves sequentially applying a current to one phase for a prescribed time, stopping the current temporarily and then reapplying the current to the same phase. The state of the rise of the current when it begins to flow to the phase, is measured. The position of one of the magnetic poles located at a position opposite to the particular phase is detected based on the measured state of the rise of the current. In response to the position of the magnetic pole, it is determined whether the flow of the current is to be switched over to the following phase or not. If so, the current is switched over the following phase and the process is repeated. Constant speed control may be accomplished by reading information from a driven disk to determine speed, comparing the speed to a fixed speed, and selectively applying by time sharing a normal current, a brake current and an acceleration current.

Abstract: A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductor layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said superlattice layers.